DE602004020538D1 - Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter. - Google Patents

Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.

Info

Publication number
DE602004020538D1
DE602004020538D1 DE602004020538T DE602004020538T DE602004020538D1 DE 602004020538 D1 DE602004020538 D1 DE 602004020538D1 DE 602004020538 T DE602004020538 T DE 602004020538T DE 602004020538 T DE602004020538 T DE 602004020538T DE 602004020538 D1 DE602004020538 D1 DE 602004020538D1
Authority
DE
Germany
Prior art keywords
semiconductors
production
laser irradiation
irradiation
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004020538T
Other languages
English (en)
Inventor
Koichiro Tanaka
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE602004020538D1 publication Critical patent/DE602004020538D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0736—Shaping the laser spot into an oval shape, e.g. elliptic shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
DE602004020538T 2003-02-28 2004-02-25 Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter. Expired - Lifetime DE602004020538D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003054695 2003-02-28

Publications (1)

Publication Number Publication Date
DE602004020538D1 true DE602004020538D1 (de) 2009-05-28

Family

ID=32905816

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004020538T Expired - Lifetime DE602004020538D1 (de) 2003-02-28 2004-02-25 Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.

Country Status (5)

Country Link
US (1) US7700462B2 (de)
EP (1) EP1468774B1 (de)
KR (1) KR20040077537A (de)
CN (1) CN100479115C (de)
DE (1) DE602004020538D1 (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
AU2003258289A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
JP4873858B2 (ja) 2002-08-19 2012-02-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エッジ領域を最小にするために基板のフィルム領域のレーザ結晶化処理方法及び装置並びにそのようなフィルム領域の構造
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7160762B2 (en) * 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
US7232715B2 (en) * 2002-11-15 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
US7919726B2 (en) 2002-11-29 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US7056810B2 (en) * 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
EP1468774B1 (de) 2003-02-28 2009-04-15 Semiconductor Energy Laboratory Co., Ltd. Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
TWI359441B (en) * 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP2005276944A (ja) * 2004-03-23 2005-10-06 Sharp Corp 半導体デバイス、その製造方法および製造装置
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP4800661B2 (ja) * 2005-05-09 2011-10-26 株式会社ディスコ レーザ光線を利用する加工装置
KR100968687B1 (ko) * 2005-08-03 2010-07-06 페톤 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치의 제조 장치
KR101250629B1 (ko) * 2005-08-16 2013-04-03 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 고주파 레이저를 사용하는 박막의 균일한 순차적 측면 고상화를 위한 시스템 및 방법
KR101368570B1 (ko) * 2005-08-16 2014-02-27 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막의 고수율 결정화
KR101287314B1 (ko) * 2005-12-05 2013-07-17 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 막 처리 시스템과 방법, 및 박막
US20070221640A1 (en) 2006-03-08 2007-09-27 Dean Jennings Apparatus for thermal processing structures formed on a substrate
JP4339330B2 (ja) * 2006-04-19 2009-10-07 日本電気株式会社 レーザ照射方法及びレーザ照射装置
US8183498B2 (en) * 2006-05-01 2012-05-22 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
US8927898B2 (en) * 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
KR100884477B1 (ko) * 2007-08-08 2009-02-20 삼성모바일디스플레이주식회사 발광표시장치 및 그의 제조방법
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
TWI418037B (zh) 2007-09-25 2013-12-01 Univ Columbia 藉由改變形狀、大小或雷射光束在製造於橫向結晶化薄膜上之薄膜電晶體元件中產生高一致性的方法
JP5443377B2 (ja) 2007-11-21 2014-03-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エピタキシャルに配向された厚膜を調製するための調製システムおよび方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) * 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
JP2011515834A (ja) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 均一な結晶シリコン薄膜を製造するリソグラフィ方法
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP2011003522A (ja) * 2008-10-16 2011-01-06 Semiconductor Energy Lab Co Ltd フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法
WO2010056990A1 (en) 2008-11-14 2010-05-20 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US8440581B2 (en) * 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
JP5861494B2 (ja) * 2012-02-23 2016-02-16 三菱マテリアル株式会社 レーザ加工装置およびレーザ加工方法
US9558973B2 (en) 2012-06-11 2017-01-31 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
US9691619B2 (en) 2013-03-07 2017-06-27 Mitsubishi Electric Corporation Laser annealing device with multiple lasers
RU2661977C1 (ru) * 2014-07-03 2018-07-23 Ниппон Стил Энд Сумитомо Метал Корпорейшн Устройство лазерной обработки
US10083843B2 (en) 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
CN106041391B (zh) * 2016-05-30 2017-08-15 武汉电信器件有限公司 一种box封装器件烧结固定夹具
US9991122B2 (en) * 2016-08-31 2018-06-05 Micron Technology, Inc. Methods of forming semiconductor device structures including two-dimensional material structures
WO2020148601A1 (ja) 2019-01-18 2020-07-23 株式会社半導体エネルギー研究所 表示システム、表示装置、発光装置
CN110244138A (zh) * 2019-05-29 2019-09-17 同济大学 一种电介质薄膜中电荷分布的双面原位测量系统及方法
CN112775563B (zh) * 2020-12-18 2023-05-05 西安晟光硅研半导体科技有限公司 一种碳化硅晶片单向四层双向八级台阶切割工艺
CN113467095B (zh) * 2021-06-08 2023-06-30 西安交通大学 一种非成像型激光匀质系统及匀质元件的制作方法

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329323A (en) 1976-08-31 1978-03-18 Nippon Electric Glass Co Glass beads of high refraction index for recurrent reflection
JPS5629323A (en) 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus
JPS57104217A (en) 1980-12-22 1982-06-29 Toshiba Corp Surface heat treatment
JPS57183023A (en) 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPH02153582A (ja) 1988-12-06 1990-06-13 Asahi Glass Co Ltd レーザダイオード励起固体レーザ
JP2923016B2 (ja) 1990-09-17 1999-07-26 株式会社日立製作所 薄膜半導体の製造方法及びその装置
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
JPH0521340A (ja) 1991-07-10 1993-01-29 Ricoh Co Ltd 薄膜半導体装置、その製法および製造装置
JPH05226790A (ja) 1992-02-18 1993-09-03 Hitachi Ltd レーザアニール装置
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6544825B1 (en) * 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
KR100255689B1 (ko) * 1993-05-27 2000-05-01 윤종용 반도체 레이져 소자 및 그 제조방법
US5923962A (en) * 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP3431041B2 (ja) 1993-11-12 2003-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH07187890A (ja) 1993-12-22 1995-07-25 Nippon Steel Corp レーザーアニーリング方法
US5611946A (en) * 1994-02-18 1997-03-18 New Wave Research Multi-wavelength laser system, probe station and laser cutter system using the same
JPH0883765A (ja) 1994-07-14 1996-03-26 Sanyo Electric Co Ltd 多結晶半導体膜の製造方法
JPH08186268A (ja) 1994-12-28 1996-07-16 Sony Corp 薄膜半導体装置の製造方法
JP3778456B2 (ja) * 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH10244392A (ja) * 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
JP3503427B2 (ja) * 1997-06-19 2004-03-08 ソニー株式会社 薄膜トランジスタの製造方法
JP3462053B2 (ja) * 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
EP1049144A4 (de) 1997-12-17 2006-12-06 Matsushita Electronics Corp Dünner halbleiterfilm, herstellungsmethode, apparat und anordnung
JP2002261015A (ja) 1997-12-17 2002-09-13 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3586558B2 (ja) 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP4827276B2 (ja) * 1999-07-05 2011-11-30 株式会社半導体エネルギー研究所 レーザー照射装置、レーザー照射方法及び半導体装置の作製方法
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
US6426245B1 (en) * 1999-07-09 2002-07-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置
US6548370B1 (en) * 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
JP3579316B2 (ja) 1999-10-19 2004-10-20 三洋電機株式会社 半導体装置の製造方法
JP4514861B2 (ja) * 1999-11-29 2010-07-28 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法
US6451631B1 (en) * 2000-08-10 2002-09-17 Hitachi America, Ltd. Thin film crystal growth by laser annealing
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
KR100473245B1 (ko) * 2000-10-06 2005-03-10 미쓰비시덴키 가부시키가이샤 다결정 실리콘막의 제조 방법, 제조 장치 및 반도체장치의 제조 방법
JP4845309B2 (ja) 2000-12-27 2011-12-28 株式会社半導体エネルギー研究所 レーザアニール方法及び半導体装置の作製方法
SG113399A1 (en) * 2000-12-27 2005-08-29 Semiconductor Energy Lab Laser annealing method and semiconductor device fabricating method
JP2002217125A (ja) 2001-01-23 2002-08-02 Sumitomo Heavy Ind Ltd 表面処理装置及び方法
JP2002231628A (ja) * 2001-02-01 2002-08-16 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
TW544938B (en) * 2001-06-01 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6645454B2 (en) * 2001-06-28 2003-11-11 Sharp Laboratories Of America, Inc. System and method for regulating lateral growth in laser irradiated silicon films
US6806489B2 (en) * 2001-10-12 2004-10-19 Samsung Sdi Co., Ltd. Field emission display having improved capability of converging electron beams
US6700096B2 (en) * 2001-10-30 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
US7026227B2 (en) * 2001-11-16 2006-04-11 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating a laser beam, and method of fabricating semiconductor devices
JP3934536B2 (ja) * 2001-11-30 2007-06-20 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
JP2003347237A (ja) 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置
US6984573B2 (en) * 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
JP2004146782A (ja) * 2002-08-29 2004-05-20 Advanced Lcd Technologies Development Center Co Ltd 結晶化状態のｉｎ−ｓｉｔｕモニタリング方法
JP2004119971A (ja) * 2002-09-04 2004-04-15 Sharp Corp レーザ加工方法およびレーザ加工装置
JP2004111584A (ja) * 2002-09-18 2004-04-08 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7919726B2 (en) * 2002-11-29 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US7056810B2 (en) * 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
JP4515034B2 (ja) * 2003-02-28 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1468774B1 (de) 2003-02-28 2009-04-15 Semiconductor Energy Laboratory Co., Ltd. Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
US7524712B2 (en) * 2003-03-07 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7208395B2 (en) * 2003-06-26 2007-04-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
US7148159B2 (en) * 2003-09-29 2006-12-12 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
JP2006041082A (ja) * 2004-07-26 2006-02-09 Sharp Corp 半導体薄膜の結晶化装置および半導体薄膜の結晶化方法
CN100565806C (zh) 2004-07-30 2009-12-02 株式会社半导体能源研究所 激光辐照装置和激光辐照方法

Also Published As

Publication number Publication date
CN1551309A (zh) 2004-12-01
EP1468774B1 (de) 2009-04-15
US20040171237A1 (en) 2004-09-02
KR20040077537A (ko) 2004-09-04
EP1468774A1 (de) 2004-10-20
CN100479115C (zh) 2009-04-15
US7700462B2 (en) 2010-04-20

Similar Documents

Publication Publication Date Title
DE602004020538D1 (de) Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
DE60206472D1 (de) Verfahren und vorrichtung zur herstellung von mineralwolle
DE602004027079D1 (de) Gleiskette, gleiskettenvorrichtung und verfahren zur herstellung der gleiskette
DE60308929D1 (de) Vorrichtung und Verfahren, um Informationen über Heimnetzwerkgeräte über das Internet bereitzustellen
DE60236402D1 (de) Verfahren zur Herstellung von Halbleitervorrichtungen
DE60223032D1 (de) Vorrichtung zur herstellung von verbundkonstruktionen und verfahren zur herstellung derselben
DE60208373D1 (de) Polyaryleneether-polyolefinzusammensetzung, verfahren zu deren herstellung und formassen daraus
DE60336238D1 (de) Verfahren zur herstellung von n-halbleiterdiamant und halbleiterdiamant
DE602004008147D1 (de) Vorrichtung zur kombinierten Energieerzeugung und Entsalzung sowie dazugehöriges Verfahren
DE60303268D1 (de) Verfahren und Vorrichtung zur Herstellung von Microarrays
DE602004003476D1 (de) Kondensator, halbleiterbauelement mit einem kondensator und verfahren zur herstellung derselben
ATE453648T1 (de) Verfahren zur herstellung von hexahydrofuroc2,3- büfuran-3-ol
DE602004025489D1 (de) Verfahren und vorrichtung zur herstellung von vliesstoffen
ATE338619T1 (de) Verfahren und vorrichtung zur herstellung von borsten
DE60232618D1 (de) Mikrofluidische Vorrichtung, Verfahren zur Herstellung und Verwendung desselben
DE602004009955D1 (de) Verfahren und vorrichtung zur herstellung von vliesstoffen
DE602005013895D1 (de) Vorrichtung zur Herstellung von Reifenbestandteilen.
DE60213444D1 (de) Fluorpolymerlaminate und verfahren zur herstellung derselben
DE102004044547B8 (de) Kühlkörper und Verfahren zur Herstellung desselben
DE502005003679D1 (de) Vorrichtung zur potentialtrennung, ringkerndrossel und verfahren zur herstellung der ringkerndrossel
DE60333304D1 (de) Gleitteil und verfahren zur herstellung des gleitteils
DE60333978D1 (de) Vorrichtung zum Kultivieren, Verfahren zur Herstellung dieser Vorrichtung, Verfahren zum Kultivieren
DE60221018D1 (de) Verfahren und vorrichtung zur herstellung von kontaktlinsen
DE60311292D1 (de) Verfahren zur herstellung von polyurethangegenständen und vorrichtung dafür
DE60327364D1 (de) Verfahren und vorrichtung zur herstellung von verpackungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition