DE602004021637D1 - Oberflächenprüfung unter verwendung einer nicht vibrierenden kontaktpotenzialsonde - Google Patents
Oberflächenprüfung unter verwendung einer nicht vibrierenden kontaktpotenzialsondeInfo
- Publication number
- DE602004021637D1 DE602004021637D1 DE602004021637T DE602004021637T DE602004021637D1 DE 602004021637 D1 DE602004021637 D1 DE 602004021637D1 DE 602004021637 T DE602004021637 T DE 602004021637T DE 602004021637 T DE602004021637 T DE 602004021637T DE 602004021637 D1 DE602004021637 D1 DE 602004021637D1
- Authority
- DE
- Germany
- Prior art keywords
- contact potential
- vibrant
- surface testing
- potential probe
- contamination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/002—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the work function voltage
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N2033/0095—Semiconductive materials
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/771,628 US7308367B2 (en) | 2003-02-03 | 2004-02-03 | Wafer inspection system |
PCT/US2004/025249 WO2005083407A1 (en) | 2004-02-03 | 2004-08-05 | Surface inspection using a non-vibrating contact potential probe |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004021637D1 true DE602004021637D1 (de) | 2009-07-30 |
Family
ID=34911306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004021637T Active DE602004021637D1 (de) | 2004-02-03 | 2004-08-05 | Oberflächenprüfung unter verwendung einer nicht vibrierenden kontaktpotenzialsonde |
Country Status (7)
Country | Link |
---|---|
US (1) | US7308367B2 (de) |
EP (1) | EP1711801B1 (de) |
JP (1) | JP2007520721A (de) |
AT (1) | ATE434178T1 (de) |
DE (1) | DE602004021637D1 (de) |
TW (1) | TWI350914B (de) |
WO (1) | WO2005083407A1 (de) |
Families Citing this family (25)
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US7107158B2 (en) * | 2003-02-03 | 2006-09-12 | Qcept Technologies, Inc. | Inspection system and apparatus |
EP1947539A4 (de) * | 2005-09-27 | 2011-05-18 | Advantest Corp | Steuerverfahren und steuersystem |
TWI289091B (en) * | 2005-10-06 | 2007-11-01 | Ind Tech Res Inst | Apparatus for endpoint detection during polishing |
US7659734B2 (en) * | 2007-03-07 | 2010-02-09 | Qcept Technologies, Inc. | Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination |
US7900526B2 (en) | 2007-11-30 | 2011-03-08 | Qcept Technologies, Inc. | Defect classification utilizing data from a non-vibrating contact potential difference sensor |
US7752000B2 (en) * | 2008-05-02 | 2010-07-06 | Qcept Technologies, Inc. | Calibration of non-vibrating contact potential difference measurements to detect surface variations that are perpendicular to the direction of sensor motion |
FR2944873B1 (fr) * | 2009-04-22 | 2011-05-13 | Centre Nat Rech Scient | Systeme pour la detection de complexes d'hybridation de sondes avec des ligands specifiques, et utilisations |
US9097645B2 (en) | 2013-08-23 | 2015-08-04 | Kla-Tencor Corporation | Method and system for high speed height control of a substrate surface within a wafer inspection system |
TWI525317B (zh) * | 2013-10-08 | 2016-03-11 | 國立清華大學 | 整合影像分析與資料挖礦之自動光學檢測缺陷影像分類方法 |
US9625557B2 (en) | 2014-05-22 | 2017-04-18 | Qcept Investments, Llc | Work function calibration of a non-contact voltage sensor |
US10969370B2 (en) * | 2015-06-05 | 2021-04-06 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Measuring semiconductor doping using constant surface potential corona charging |
WO2017072976A1 (ja) * | 2015-10-30 | 2017-05-04 | 三菱電機株式会社 | ワイヤ放電加工機、ワイヤ放電加工機の制御装置の制御方法及び位置決め方法 |
KR20190066011A (ko) * | 2016-10-22 | 2019-06-12 | 마탄 라피닷 | 결함 발생 및 위치 탐지를 위한 모바일 검사 시스템 |
EP3542155A4 (de) | 2016-11-16 | 2020-08-26 | 3M Innovative Properties Company | Elektrodenplatzierung zur überprüfung der strukturellen integrität von materialien |
US11060993B2 (en) | 2016-11-16 | 2021-07-13 | 3M Innovative Properties Company | Suppressing thermally induced voltages for verifying structural integrity of materials |
US11255807B2 (en) | 2016-11-16 | 2022-02-22 | 3M Innovative Properties Company | Verifying structural integrity of materials |
EP3542153A1 (de) | 2016-11-16 | 2019-09-25 | 3M Innovative Properties Company | Temperaturunabhängige überprüfung von struktureller integrität von materialien mit elektrischen eigenschaften |
WO2018093906A1 (en) * | 2016-11-16 | 2018-05-24 | 3M Innovative Properties Company | Verifying structural integrity of materials using multiple current injection points and one or more current extraction points |
WO2018140148A2 (en) | 2016-12-16 | 2018-08-02 | 3M Innovative Properties Company | Verifying structural integrity of materials |
US10816495B2 (en) | 2016-12-16 | 2020-10-27 | 3M Innovative Properties Company | Verifying structural integrity of materials |
WO2018112311A1 (en) | 2016-12-16 | 2018-06-21 | 3M Innovative Properties Company | Verifying structural integrity of materials using reference impedance |
CN109405734B (zh) * | 2018-12-14 | 2023-11-21 | 中核新科(天津)精密机械制造有限公司 | 快速高精度平面平行度测量装置及测量方法 |
JP7453853B2 (ja) * | 2020-05-27 | 2024-03-21 | 株式会社日立製作所 | 処理条件決定システムおよび処理条件探索方法 |
CZ2020320A3 (cs) * | 2020-06-05 | 2021-12-08 | Tescan Brno, S.R.O. | Způsob automatické detekce požadovaného píku při opracování vzorku fokusovaným iontovým svazkem |
CN113643296B (zh) * | 2021-10-18 | 2022-02-08 | 季华实验室 | 电感元件装配质量检测方法、装置、电子设备及存储介质 |
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US5087533A (en) * | 1989-10-12 | 1992-02-11 | Brown Paul M | Contact potential difference cell |
DD297509A5 (de) | 1990-03-13 | 1992-01-09 | Kloeden,Rolf,De | Kapazitiver sensor zur beruehrungslosen rauheitsmessung |
DE4018993A1 (de) * | 1990-06-13 | 1991-12-19 | Max Planck Inst Eisenforschung | Verfahren und einrichtung zur untersuchung beschichteter metalloberflaechen |
GB9021447D0 (en) * | 1990-10-03 | 1990-11-14 | Renishaw Plc | Capacitance probes |
GB9021448D0 (en) * | 1990-10-03 | 1990-11-14 | Renishaw Plc | Capacitance sensing probe |
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JP2774878B2 (ja) * | 1991-04-25 | 1998-07-09 | 株式会社日立製作所 | 多層膜絶縁物試料の二次イオン質量分析方法 |
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JP2004177377A (ja) * | 2002-11-29 | 2004-06-24 | Hitachi Ltd | 検査方法および検査装置 |
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-
2004
- 2004-02-03 US US10/771,628 patent/US7308367B2/en not_active Expired - Fee Related
- 2004-08-05 EP EP04780139A patent/EP1711801B1/de not_active Not-in-force
- 2004-08-05 AT AT04780139T patent/ATE434178T1/de not_active IP Right Cessation
- 2004-08-05 WO PCT/US2004/025249 patent/WO2005083407A1/en active Application Filing
- 2004-08-05 JP JP2006552094A patent/JP2007520721A/ja active Pending
- 2004-08-05 TW TW093123449A patent/TWI350914B/zh not_active IP Right Cessation
- 2004-08-05 DE DE602004021637T patent/DE602004021637D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
ATE434178T1 (de) | 2009-07-15 |
TWI350914B (en) | 2011-10-21 |
JP2007520721A (ja) | 2007-07-26 |
WO2005083407A1 (en) | 2005-09-09 |
US7308367B2 (en) | 2007-12-11 |
TW200526949A (en) | 2005-08-16 |
US20040241890A1 (en) | 2004-12-02 |
EP1711801B1 (de) | 2009-06-17 |
EP1711801A1 (de) | 2006-10-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |