DE602004023002D1 - Ackungsverfahren dazu - Google Patents
Ackungsverfahren dazuInfo
- Publication number
- DE602004023002D1 DE602004023002D1 DE602004023002T DE602004023002T DE602004023002D1 DE 602004023002 D1 DE602004023002 D1 DE 602004023002D1 DE 602004023002 T DE602004023002 T DE 602004023002T DE 602004023002 T DE602004023002 T DE 602004023002T DE 602004023002 D1 DE602004023002 D1 DE 602004023002D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- bond
- pad
- microelectronic
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004377 microelectronic Methods 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 238000003384 imaging method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01066—Dysprosium [Dy]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/879,398 US7294897B2 (en) | 2004-06-29 | 2004-06-29 | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
PCT/US2004/037415 WO2006011897A1 (en) | 2004-06-29 | 2004-11-09 | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004023002D1 true DE602004023002D1 (de) | 2009-10-15 |
Family
ID=34959511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004023002T Active DE602004023002D1 (de) | 2004-06-29 | 2004-11-09 | Ackungsverfahren dazu |
Country Status (10)
Country | Link |
---|---|
US (3) | US7294897B2 (de) |
EP (2) | EP2093800B1 (de) |
JP (1) | JP4759677B2 (de) |
KR (1) | KR100909773B1 (de) |
CN (1) | CN1977382A (de) |
AT (2) | ATE515799T1 (de) |
DE (1) | DE602004023002D1 (de) |
SG (1) | SG153876A1 (de) |
TW (1) | TWI305388B (de) |
WO (1) | WO2006011897A1 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7091124B2 (en) | 2003-11-13 | 2006-08-15 | Micron Technology, Inc. | Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices |
US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
US7148525B2 (en) * | 2004-01-12 | 2006-12-12 | Micron Technology, Inc. | Using high-k dielectrics in isolation structures method, pixel and imager device |
US6943106B1 (en) * | 2004-02-20 | 2005-09-13 | Micron Technology, Inc. | Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder filling |
US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
US7199439B2 (en) * | 2004-06-14 | 2007-04-03 | Micron Technology, Inc. | Microelectronic imagers and methods of packaging microelectronic imagers |
US7232754B2 (en) * | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7416913B2 (en) | 2004-07-16 | 2008-08-26 | Micron Technology, Inc. | Methods of manufacturing microelectronic imaging units with discrete standoffs |
US7189954B2 (en) | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US7364934B2 (en) * | 2004-08-10 | 2008-04-29 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
SG120200A1 (en) | 2004-08-27 | 2006-03-28 | Micron Technology Inc | Slanted vias for electrical circuits on circuit boards and other substrates |
US7300857B2 (en) * | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US7271482B2 (en) | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
JP4533283B2 (ja) * | 2005-08-29 | 2010-09-01 | 新光電気工業株式会社 | 半導体装置の製造方法 |
US7863187B2 (en) * | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7892972B2 (en) * | 2006-02-03 | 2011-02-22 | Micron Technology, Inc. | Methods for fabricating and filling conductive vias and conductive vias so formed |
CN101627474A (zh) * | 2006-04-20 | 2010-01-13 | Nxp股份有限公司 | 用于led照明应用的、热沉中的电子器件的热隔离 |
US7749899B2 (en) | 2006-06-01 | 2010-07-06 | Micron Technology, Inc. | Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces |
US7629249B2 (en) * | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
US7768040B2 (en) * | 2006-10-23 | 2010-08-03 | Micron Technology, Inc. | Imager device with electric connections to electrical device |
US7919410B2 (en) * | 2007-03-14 | 2011-04-05 | Aptina Imaging Corporation | Packaging methods for imager devices |
US8193092B2 (en) * | 2007-07-31 | 2012-06-05 | Micron Technology, Inc. | Semiconductor devices including a through-substrate conductive member with an exposed end and methods of manufacturing such semiconductor devices |
SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US8084854B2 (en) * | 2007-12-28 | 2011-12-27 | Micron Technology, Inc. | Pass-through 3D interconnect for microelectronic dies and associated systems and methods |
JP2009224492A (ja) * | 2008-03-14 | 2009-10-01 | Oki Semiconductor Co Ltd | 半導体装置及びその製造方法 |
KR100956379B1 (ko) * | 2008-04-24 | 2010-05-07 | 삼성전기주식회사 | 웨이퍼 레벨 카메라 모듈의 검사방법 |
US7968373B2 (en) * | 2008-05-02 | 2011-06-28 | Stats Chippac Ltd. | Integrated circuit package on package system |
US8253230B2 (en) | 2008-05-15 | 2012-08-28 | Micron Technology, Inc. | Disabling electrical connections using pass-through 3D interconnects and associated systems and methods |
US7919348B2 (en) * | 2008-06-13 | 2011-04-05 | Aptina Imaging Corporation | Methods for protecting imaging elements of photoimagers during back side processing |
KR101002680B1 (ko) * | 2008-10-21 | 2010-12-21 | 삼성전기주식회사 | 반도체 패키지 및 그 제조 방법 |
KR20100052638A (ko) * | 2008-11-11 | 2010-05-20 | 주식회사 동부하이텍 | 이미지 센서의 제조 방법 |
US7947601B2 (en) | 2009-03-24 | 2011-05-24 | Micron Technology, Inc. | Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device |
ATE548321T1 (de) | 2009-06-30 | 2012-03-15 | Procter & Gamble | Flüssigkeitsdosiervorrichtung |
US8278769B2 (en) * | 2009-07-02 | 2012-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Compound semiconductor device and connectors |
US8304863B2 (en) | 2010-02-09 | 2012-11-06 | International Business Machines Corporation | Electromigration immune through-substrate vias |
FR2959866A1 (fr) * | 2010-05-06 | 2011-11-11 | St Microelectronics Crolles 2 | Procede de realisation d'au moins une liaison traversante electriquement conductrice au sein d'un substrat semi-conducteur dans un circuit integre et circuit integre correspondant. |
JP2012004677A (ja) * | 2010-06-14 | 2012-01-05 | Toshiba Corp | カメラモジュールおよびその製造方法 |
US9252172B2 (en) | 2011-05-31 | 2016-02-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region |
US8552518B2 (en) | 2011-06-09 | 2013-10-08 | Optiz, Inc. | 3D integrated microelectronic assembly with stress reducing interconnects |
US9553162B2 (en) | 2011-09-15 | 2017-01-24 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus |
US9564413B2 (en) | 2011-09-15 | 2017-02-07 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus |
FR3007403B1 (fr) * | 2013-06-20 | 2016-08-05 | Commissariat Energie Atomique | Procede de realisation d'un dispositif microelectronique mecaniquement autonome |
CN104576664B (zh) * | 2013-10-23 | 2018-04-20 | 豪威科技(上海)有限公司 | 一种背照式cmos传感器及其制造方法 |
CN105845635B (zh) * | 2015-01-16 | 2018-12-07 | 恒劲科技股份有限公司 | 电子封装结构 |
JP6808714B2 (ja) * | 2015-08-03 | 2021-01-06 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 洗浄組成物 |
US10276402B2 (en) * | 2016-03-21 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and manufacturing process thereof |
CN207781947U (zh) * | 2017-03-10 | 2018-08-28 | 唐虞企业股份有限公司 | 连接器 |
Family Cites Families (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6687A (en) * | 1849-09-04 | Bedstead-fastening | ||
DE1160831B (de) * | 1962-04-21 | 1964-01-09 | Knapsack Ag | Verfahren und Vorrichtung zur Herstellung von Titannitrid |
US4534100A (en) * | 1982-06-28 | 1985-08-13 | The United States Of America As Represented By The Secretary Of The Air Force | Electrical method of making conductive paths in silicon |
JPS59101882A (ja) | 1982-12-03 | 1984-06-12 | Nec Corp | 光半導体装置 |
JPS59191388A (ja) | 1983-04-14 | 1984-10-30 | Victor Co Of Japan Ltd | 半導体装置 |
DE3837063C1 (de) | 1988-10-31 | 1990-03-29 | Reimar Dr. 8000 Muenchen De Lenz | |
US4906314A (en) * | 1988-12-30 | 1990-03-06 | Micron Technology, Inc. | Process for simultaneously applying precut swatches of precured polyimide film to each semiconductor die on a wafer |
JP2828116B2 (ja) * | 1990-05-30 | 1998-11-25 | オリンパス光学工業株式会社 | 固体撮像装置 |
US5130783A (en) * | 1991-03-04 | 1992-07-14 | Texas Instruments Incorporated | Flexible film semiconductor package |
JPH05251717A (ja) * | 1992-03-04 | 1993-09-28 | Hitachi Ltd | 半導体パッケージおよび半導体モジュール |
US5760834A (en) * | 1992-09-30 | 1998-06-02 | Lsi Logic | Electronic camera with binary lens element array |
JP2833941B2 (ja) * | 1992-10-09 | 1998-12-09 | 三菱電機株式会社 | 固体撮像装置とその製造方法 |
JP3161142B2 (ja) * | 1993-03-26 | 2001-04-25 | ソニー株式会社 | 半導体装置 |
JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
US5435887A (en) * | 1993-11-03 | 1995-07-25 | Massachusetts Institute Of Technology | Methods for the fabrication of microstructure arrays |
JP3253439B2 (ja) * | 1993-12-24 | 2002-02-04 | シャープ株式会社 | 液晶表示素子の製造方法 |
US5536455A (en) * | 1994-01-03 | 1996-07-16 | Omron Corporation | Method of manufacturing lens array |
KR0147401B1 (ko) * | 1994-02-23 | 1998-08-01 | 구본준 | 고체촬상소자 및 그 제조방법 |
JPH07263607A (ja) | 1994-03-17 | 1995-10-13 | Sumitomo Kinzoku Ceramics:Kk | Jリード付半導体パッケージとリードフレームの曲げ方法 |
JP2872051B2 (ja) * | 1994-10-04 | 1999-03-17 | カーネル技研株式会社 | 水中眼鏡 |
JP3239640B2 (ja) * | 1994-10-04 | 2001-12-17 | ソニー株式会社 | 半導体装置の製造方法および半導体装置 |
US5605783A (en) * | 1995-01-06 | 1997-02-25 | Eastman Kodak Company | Pattern transfer techniques for fabrication of lenslet arrays for solid state imagers |
US5861654A (en) * | 1995-11-28 | 1999-01-19 | Eastman Kodak Company | Image sensor assembly |
US5693967A (en) * | 1995-08-10 | 1997-12-02 | Lg Semicon Co., Ltd. | Charge coupled device with microlens |
JP3263705B2 (ja) * | 1995-09-21 | 2002-03-11 | 三菱電機株式会社 | プリント配線板およびフラットパネル・ディスプレイ駆動回路用プリント配線板およびフラットパネル・ディスプレイ装置 |
US6013948A (en) * | 1995-11-27 | 2000-01-11 | Micron Technology, Inc. | Stackable chip scale semiconductor package with mating contacts on opposed surfaces |
US5776824A (en) * | 1995-12-22 | 1998-07-07 | Micron Technology, Inc. | Method for producing laminated film/metal structures for known good die ("KG") applications |
JPH09186286A (ja) * | 1996-01-05 | 1997-07-15 | Matsushita Electron Corp | リードフレーム及び半導体チップの実装方法 |
GB2310952B (en) * | 1996-03-05 | 1998-08-19 | Mitsubishi Electric Corp | Infrared detector |
US6795120B2 (en) * | 1996-05-17 | 2004-09-21 | Sony Corporation | Solid-state imaging apparatus and camera using the same |
NL1003315C2 (nl) * | 1996-06-11 | 1997-12-17 | Europ Semiconductor Assembly E | Werkwijze voor het inkapselen van een geïntegreerde halfgeleiderschake- ling. |
US5857963A (en) * | 1996-07-17 | 1999-01-12 | Welch Allyn, Inc. | Tab imager assembly for use in an endoscope |
US6096155A (en) * | 1996-09-27 | 2000-08-01 | Digital Optics Corporation | Method of dicing wafer level integrated multiple optical elements |
JP2924854B2 (ja) * | 1997-05-20 | 1999-07-26 | 日本電気株式会社 | 半導体装置、その製造方法 |
US5821532A (en) * | 1997-06-16 | 1998-10-13 | Eastman Kodak Company | Imager package substrate |
US5811799A (en) * | 1997-07-31 | 1998-09-22 | Wu; Liang-Chung | Image sensor package having a wall with a sealed cover |
JPH1168074A (ja) * | 1997-08-13 | 1999-03-09 | Sony Corp | 固体撮像素子 |
US5962810A (en) * | 1997-09-09 | 1999-10-05 | Amkor Technology, Inc. | Integrated circuit package employing a transparent encapsulant |
JPH11132857A (ja) * | 1997-10-28 | 1999-05-21 | Matsushita Electric Works Ltd | 赤外線検出器 |
US6114240A (en) * | 1997-12-18 | 2000-09-05 | Micron Technology, Inc. | Method for fabricating semiconductor components using focused laser beam |
JPH11326603A (ja) * | 1998-05-19 | 1999-11-26 | Seiko Epson Corp | マイクロレンズアレイ及びその製造方法並びに表示装置 |
EP0962978A1 (de) * | 1998-06-04 | 1999-12-08 | Matsushita Electric Industrial Co., Ltd. | Halbleiteranordnung und Verfahren zu deren Herstellung |
US6080291A (en) * | 1998-07-10 | 2000-06-27 | Semitool, Inc. | Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member |
IL126165A0 (en) * | 1998-09-10 | 1999-05-09 | Scitex Corp Ltd | Apparatus for the orthogonal movement of a ccd sensor |
US6566745B1 (en) * | 1999-03-29 | 2003-05-20 | Imec Vzw | Image sensor ball grid array package and the fabrication thereof |
US6274927B1 (en) * | 1999-06-03 | 2001-08-14 | Amkor Technology, Inc. | Plastic package for an optical integrated circuit device and method of making |
US6376868B1 (en) * | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
JP2001077496A (ja) | 1999-09-06 | 2001-03-23 | Ngk Insulators Ltd | プリント回路用基板材とその製造方法 |
DE19952363A1 (de) * | 1999-10-30 | 2001-05-03 | Bosch Gmbh Robert | Optoelektronischer Empfänger |
US6483101B1 (en) * | 1999-12-08 | 2002-11-19 | Amkor Technology, Inc. | Molded image sensor package having lens holder |
US6266197B1 (en) * | 1999-12-08 | 2001-07-24 | Amkor Technology, Inc. | Molded window array for image sensor packages |
JP3736607B2 (ja) * | 2000-01-21 | 2006-01-18 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
US6351027B1 (en) * | 2000-02-29 | 2002-02-26 | Agilent Technologies, Inc. | Chip-mounted enclosure |
US6285064B1 (en) * | 2000-03-28 | 2001-09-04 | Omnivision Technologies, Inc. | Chip scale packaging technique for optical image sensing integrated circuits |
US6441481B1 (en) * | 2000-04-10 | 2002-08-27 | Analog Devices, Inc. | Hermetically sealed microstructure package |
US6433411B1 (en) | 2000-05-22 | 2002-08-13 | Agere Systems Guardian Corp. | Packaging micromechanical devices |
WO2001091193A2 (en) | 2000-05-23 | 2001-11-29 | Atmel Corporation | Integrated ic chip package for electronic image sensor die |
US6503780B1 (en) * | 2000-07-05 | 2003-01-07 | Amkor Technology, Inc. | Wafer scale image sensor package fabrication method |
US6407381B1 (en) * | 2000-07-05 | 2002-06-18 | Amkor Technology, Inc. | Wafer scale image sensor package |
JP2002094082A (ja) * | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
JP3725012B2 (ja) * | 2000-08-17 | 2005-12-07 | シャープ株式会社 | レンズ一体型固体撮像装置の製造方法 |
TW528889B (en) * | 2000-11-14 | 2003-04-21 | Toshiba Corp | Image pickup apparatus, manufacturing method thereof, and portable electric apparatus |
US6909554B2 (en) * | 2000-12-27 | 2005-06-21 | Finisar Corporation | Wafer integration of micro-optics |
US20020089025A1 (en) * | 2001-01-05 | 2002-07-11 | Li-Kun Chou | Package structure for image IC |
US6686588B1 (en) * | 2001-01-16 | 2004-02-03 | Amkor Technology, Inc. | Optical module with lens integral holder |
US20020096729A1 (en) * | 2001-01-24 | 2002-07-25 | Tu Hsiu Wen | Stacked package structure of image sensor |
KR100396551B1 (ko) * | 2001-02-03 | 2003-09-03 | 삼성전자주식회사 | 웨이퍼 레벨 허메틱 실링 방법 |
US6534863B2 (en) * | 2001-02-09 | 2003-03-18 | International Business Machines Corporation | Common ball-limiting metallurgy for I/O sites |
JP3821652B2 (ja) * | 2001-02-26 | 2006-09-13 | 三菱電機株式会社 | 撮像装置 |
US20040012698A1 (en) * | 2001-03-05 | 2004-01-22 | Yasuo Suda | Image pickup model and image pickup device |
US6828663B2 (en) * | 2001-03-07 | 2004-12-07 | Teledyne Technologies Incorporated | Method of packaging a device with a lead frame, and an apparatus formed therefrom |
FR2822326B1 (fr) | 2001-03-16 | 2003-07-04 | Atmel Grenoble Sa | Camera electronique a faible cout en technologie des circuits integres |
US6635941B2 (en) * | 2001-03-21 | 2003-10-21 | Canon Kabushiki Kaisha | Structure of semiconductor device with improved reliability |
JP2002299595A (ja) * | 2001-04-03 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
US7057273B2 (en) | 2001-05-15 | 2006-06-06 | Gem Services, Inc. | Surface mount package |
FR2824953B1 (fr) | 2001-05-18 | 2004-07-16 | St Microelectronics Sa | Boitier semi-conducteur optique a lentille incorporee et blindage |
JP4053257B2 (ja) * | 2001-06-14 | 2008-02-27 | 新光電気工業株式会社 | 半導体装置の製造方法 |
US6734419B1 (en) * | 2001-06-28 | 2004-05-11 | Amkor Technology, Inc. | Method for forming an image sensor package with vision die in lens housing |
KR100427356B1 (ko) * | 2001-08-14 | 2004-04-13 | 삼성전기주식회사 | 광마우스용 서브 칩 온 보드 |
KR100431260B1 (ko) | 2001-08-29 | 2004-05-12 | 삼성전기주식회사 | 이미지 모듈 |
US6504196B1 (en) | 2001-08-30 | 2003-01-07 | Micron Technology, Inc. | CMOS imager and method of formation |
US6603183B1 (en) * | 2001-09-04 | 2003-08-05 | Amkor Technology, Inc. | Quick sealing glass-lidded package |
US6759266B1 (en) * | 2001-09-04 | 2004-07-06 | Amkor Technology, Inc. | Quick sealing glass-lidded package fabrication method |
US6778046B2 (en) * | 2001-09-17 | 2004-08-17 | Magfusion Inc. | Latching micro magnetic relay packages and methods of packaging |
US6774486B2 (en) * | 2001-10-10 | 2004-08-10 | Micron Technology, Inc. | Circuit boards containing vias and methods for producing same |
WO2003041174A1 (fr) * | 2001-11-05 | 2003-05-15 | Mitsumasa Koyanagi | Capteur d'images a semi-conducteur et procede de fabrication associe |
FR2835654B1 (fr) | 2002-02-06 | 2004-07-09 | St Microelectronics Sa | Boitier semi-conducteur optique a porte-lentille accouple |
TWI229435B (en) * | 2002-06-18 | 2005-03-11 | Sanyo Electric Co | Manufacture of semiconductor device |
US20040038442A1 (en) * | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
US6885107B2 (en) * | 2002-08-29 | 2005-04-26 | Micron Technology, Inc. | Flip-chip image sensor packages and methods of fabrication |
US6808960B2 (en) * | 2002-10-25 | 2004-10-26 | Omni Vision International Holding Ltd | Method for making and packaging image sensor die using protective coating |
JP2004165191A (ja) * | 2002-11-08 | 2004-06-10 | Oki Electric Ind Co Ltd | 半導体装置、半導体装置の製造方法及びカメラシステム |
JP4723860B2 (ja) * | 2002-12-09 | 2011-07-13 | クォンタム セミコンダクター リミテッド ライアビリティ カンパニー | Cmos画像センサー |
US6813154B2 (en) * | 2002-12-10 | 2004-11-02 | Motorola, Inc. | Reversible heat sink packaging assembly for an integrated circuit |
SG137651A1 (en) * | 2003-03-14 | 2007-12-28 | Micron Technology Inc | Microelectronic devices and methods for packaging microelectronic devices |
JP3800335B2 (ja) * | 2003-04-16 | 2006-07-26 | セイコーエプソン株式会社 | 光デバイス、光モジュール、半導体装置及び電子機器 |
US7312101B2 (en) * | 2003-04-22 | 2007-12-25 | Micron Technology, Inc. | Packaged microelectronic devices and methods for packaging microelectronic devices |
SG143932A1 (en) * | 2003-05-30 | 2008-07-29 | Micron Technology Inc | Packaged microelectronic devices and methods of packaging microelectronic devices |
US6934065B2 (en) * | 2003-09-18 | 2005-08-23 | Micron Technology, Inc. | Microelectronic devices and methods for packaging microelectronic devices |
US7091124B2 (en) * | 2003-11-13 | 2006-08-15 | Micron Technology, Inc. | Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices |
US8084866B2 (en) * | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
US7583862B2 (en) * | 2003-11-26 | 2009-09-01 | Aptina Imaging Corporation | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
JP3990347B2 (ja) * | 2003-12-04 | 2007-10-10 | ローム株式会社 | 半導体チップおよびその製造方法、ならびに半導体装置 |
JP4179174B2 (ja) * | 2004-01-27 | 2008-11-12 | カシオ計算機株式会社 | 撮像装置およびその製造方法並びにその実装構造 |
US7632713B2 (en) * | 2004-04-27 | 2009-12-15 | Aptina Imaging Corporation | Methods of packaging microelectronic imaging devices |
US7253957B2 (en) * | 2004-05-13 | 2007-08-07 | Micron Technology, Inc. | Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers |
US20050275750A1 (en) * | 2004-06-09 | 2005-12-15 | Salman Akram | Wafer-level packaged microelectronic imagers and processes for wafer-level packaging |
US7199439B2 (en) * | 2004-06-14 | 2007-04-03 | Micron Technology, Inc. | Microelectronic imagers and methods of packaging microelectronic imagers |
-
2004
- 2004-06-29 US US10/879,398 patent/US7294897B2/en not_active Expired - Fee Related
- 2004-11-09 JP JP2007519188A patent/JP4759677B2/ja not_active Expired - Fee Related
- 2004-11-09 KR KR1020077002140A patent/KR100909773B1/ko not_active IP Right Cessation
- 2004-11-09 CN CNA2004800435031A patent/CN1977382A/zh active Pending
- 2004-11-09 DE DE602004023002T patent/DE602004023002D1/de active Active
- 2004-11-09 WO PCT/US2004/037415 patent/WO2006011897A1/en active Application Filing
- 2004-11-09 EP EP09007845A patent/EP2093800B1/de not_active Not-in-force
- 2004-11-09 SG SG200904440-5A patent/SG153876A1/en unknown
- 2004-11-09 AT AT09007845T patent/ATE515799T1/de not_active IP Right Cessation
- 2004-11-09 EP EP04822213A patent/EP1763897B1/de not_active Not-in-force
- 2004-11-09 AT AT04822213T patent/ATE441941T1/de not_active IP Right Cessation
- 2004-11-23 TW TW093136006A patent/TWI305388B/zh not_active IP Right Cessation
-
2007
- 2007-09-27 US US11/863,087 patent/US7858429B2/en not_active Expired - Fee Related
-
2010
- 2010-12-23 US US12/977,686 patent/US8053857B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4759677B2 (ja) | 2011-08-31 |
JP2008505481A (ja) | 2008-02-21 |
EP1763897B1 (de) | 2009-09-02 |
US20110089539A1 (en) | 2011-04-21 |
TW200601466A (en) | 2006-01-01 |
EP1763897A1 (de) | 2007-03-21 |
TWI305388B (en) | 2009-01-11 |
US20080020505A1 (en) | 2008-01-24 |
EP2093800A3 (de) | 2010-03-31 |
US7294897B2 (en) | 2007-11-13 |
EP2093800B1 (de) | 2011-07-06 |
US8053857B2 (en) | 2011-11-08 |
US7858429B2 (en) | 2010-12-28 |
CN1977382A (zh) | 2007-06-06 |
WO2006011897A1 (en) | 2006-02-02 |
ATE441941T1 (de) | 2009-09-15 |
SG153876A1 (en) | 2009-07-29 |
KR20070041728A (ko) | 2007-04-19 |
US20050285154A1 (en) | 2005-12-29 |
KR100909773B1 (ko) | 2009-07-29 |
ATE515799T1 (de) | 2011-07-15 |
EP2093800A2 (de) | 2009-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602004023002D1 (de) | Ackungsverfahren dazu | |
TWI331388B (en) | Package substrate, method of fabricating the same and chip package | |
TWI332790B (en) | Image sensor module with a three-dimensional dies-stacking structure | |
TW200605242A (en) | Wafer-level chip scale packaging method | |
TWI523156B (zh) | 半導體裝置之外部電路連接部構造及其形成方法 | |
TW200644135A (en) | Method for fabricating a wafer level package having through wafer vias for external package connectivity and related structure | |
TW200504924A (en) | Inductor with high quality factor and method of fabricating the same | |
WO2010008689A3 (en) | Embedded die package and process flow using a pre-molded carrier | |
TW200620474A (en) | Method of fabricating semiconductor device with three-dimensional stacked structure | |
TW200631132A (en) | Semiconductor device and method for manufacturing the same | |
JP2009206253A5 (de) | ||
TWI505413B (zh) | 晶片封裝體及其製造方法 | |
TW200741961A (en) | Semiconductor devices and fabrication method thereof | |
TW200744142A (en) | Semiconductor device including electrically conductive bump and method of manufacturing the same | |
TW200503184A (en) | Polymer memory device formed in via opening | |
TW200627585A (en) | Semiconductor device and method for fabricating the same | |
TW201145485A (en) | Chip package | |
TW200642015A (en) | Sensor semiconductor device and fabrication method thereof | |
EP1146558A3 (de) | Damascene Verdrahtung Struktur und Halbleiterelement mit damascene Verdrahtungen | |
TWI256146B (en) | Sensor semiconductor device and fabrication method thereof | |
WO2009155160A3 (en) | Multi-layer thick metallization structure for a microelectronic device, integrated circuit containing same, and method of manufacturing an integrated circuit containing same | |
TW200943483A (en) | Interconnect structure and method for Cu/ultra low k integration | |
EP2306514A3 (de) | Kohlenstoff-Nanoröhren Bondpad-struktur und verfahren zu ihrer Herstellung | |
TW200610099A (en) | Interconnection structure for ic metallization and method for fabricating the same | |
CN106611715A (zh) | 晶片封装体及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |