DE224448C
(de)
|
|
|
|
|
DE242880C
(de)
|
|
|
|
|
DE206607C
(de)
|
|
|
|
|
DE221563C
(de)
|
|
|
|
|
GB1242527A
(en)
|
1967-10-20 |
1971-08-11 |
Kodak Ltd |
Optical instruments
|
US3573975A
(en)
|
1968-07-10 |
1971-04-06 |
Ibm |
Photochemical fabrication process
|
JPS5919912Y2
(ja)
|
1978-08-21 |
1984-06-08 |
清水建設株式会社 |
複合熱交換器
|
ATE1462T1
(de)
|
1979-07-27 |
1982-08-15 |
Werner W. Dr. Tabarelli |
Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
|
FR2474708B1
(fr)
|
1980-01-24 |
1987-02-20 |
Dme |
Procede de microphotolithographie a haute resolution de traits
|
JPS5754317A
(en)
|
1980-09-19 |
1982-03-31 |
Hitachi Ltd |
Method and device for forming pattern
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
US4509852A
(en)
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
US4390273A
(en)
|
1981-02-17 |
1983-06-28 |
Censor Patent-Und Versuchsanstalt |
Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
DD160756A3
(de)
*
|
1981-04-24 |
1984-02-29 |
Gudrun Dietz |
Anordnung zur verbesserung fotochemischer umsetzungsprozesse in fotoresistschichten
|
JPS58202448A
(ja)
|
1982-05-21 |
1983-11-25 |
Hitachi Ltd |
露光装置
|
DD206607A1
(de)
|
1982-06-16 |
1984-02-01 |
Mikroelektronik Zt Forsch Tech |
Verfahren und vorrichtung zur beseitigung von interferenzeffekten
|
JPS5919912A
(ja)
|
1982-07-26 |
1984-02-01 |
Hitachi Ltd |
液浸距離保持装置
|
DD242880A1
(de)
|
1983-01-31 |
1987-02-11 |
Kuch Karl Heinz |
Einrichtung zur fotolithografischen strukturuebertragung
|
DD221563A1
(de)
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
DE3447488A1
(de)
|
1984-10-19 |
1986-05-07 |
Canon K.K., Tokio/Tokyo |
Projektionseinrichtung
|
JPS6265326A
(ja)
|
1985-09-18 |
1987-03-24 |
Hitachi Ltd |
露光装置
|
JPS6265326U
(de)
|
1985-10-16 |
1987-04-23 |
|
|
JPS62121417A
(ja)
|
1985-11-22 |
1987-06-02 |
Hitachi Ltd |
液浸対物レンズ装置
|
JPS62121417U
(de)
|
1986-01-24 |
1987-08-01 |
|
|
JPS63157419A
(ja)
|
1986-12-22 |
1988-06-30 |
Toshiba Corp |
微細パタ−ン転写装置
|
JPS63157419U
(de)
|
1987-03-31 |
1988-10-14 |
|
|
US5040020A
(en)
|
1988-03-31 |
1991-08-13 |
Cornell Research Foundation, Inc. |
Self-aligned, high resolution resonant dielectric lithography
|
JPH03209479A
(ja)
|
1989-09-06 |
1991-09-12 |
Sanee Giken Kk |
露光方法
|
JPH04305917A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH04305915A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH0562877A
(ja)
|
1991-09-02 |
1993-03-12 |
Yasuko Shinohara |
光によるlsi製造縮小投影露光装置の光学系
|
JPH0678192B2
(ja)
|
1991-10-03 |
1994-10-05 |
工業技術院長 |
炭素‐炭化ケイ素系複合材料及びその製造方法
|
JPH05304072A
(ja)
|
1992-04-08 |
1993-11-16 |
Nec Corp |
半導体装置の製造方法
|
JPH06124873A
(ja)
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
JP2753930B2
(ja)
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
JP2520833B2
(ja)
|
1992-12-21 |
1996-07-31 |
東京エレクトロン株式会社 |
浸漬式の液処理装置
|
JPH07220990A
(ja)
|
1994-01-28 |
1995-08-18 |
Hitachi Ltd |
パターン形成方法及びその露光装置
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
US6104687A
(en)
|
1996-08-26 |
2000-08-15 |
Digital Papyrus Corporation |
Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
|
US5825043A
(en)
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
JP3612920B2
(ja)
|
1997-02-14 |
2005-01-26 |
ソニー株式会社 |
光学記録媒体の原盤作製用露光装置
|
JPH10255319A
(ja)
|
1997-03-12 |
1998-09-25 |
Hitachi Maxell Ltd |
原盤露光装置及び方法
|
JP3747566B2
(ja)
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
JP3817836B2
(ja)
|
1997-06-10 |
2006-09-06 |
株式会社ニコン |
露光装置及びその製造方法並びに露光方法及びデバイス製造方法
|
US5900354A
(en)
|
1997-07-03 |
1999-05-04 |
Batchelder; John Samuel |
Method for optical inspection and lithography
|
JPH11176727A
(ja)
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
EP1039511A4
(de)
|
1997-12-12 |
2005-03-02 |
Nikon Corp |
Verfahren zur projektionsbelichtung und projektionsausrichteinrichtung
|
AU2747999A
(en)
|
1998-03-26 |
1999-10-18 |
Nikon Corporation |
Projection exposure method and system
|
US5997963A
(en)
*
|
1998-05-05 |
1999-12-07 |
Ultratech Stepper, Inc. |
Microchamber
|
JP2000058436A
(ja)
|
1998-08-11 |
2000-02-25 |
Nikon Corp |
投影露光装置及び露光方法
|
TWI242111B
(en)
|
1999-04-19 |
2005-10-21 |
Asml Netherlands Bv |
Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
|
JP4504479B2
(ja)
|
1999-09-21 |
2010-07-14 |
オリンパス株式会社 |
顕微鏡用液浸対物レンズ
|
TW563002B
(en)
*
|
1999-11-05 |
2003-11-21 |
Asml Netherlands Bv |
Lithographic projection apparatus, method of manufacturing a device using a lithographic projection apparatus, and device manufactured by the method
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
US6995930B2
(en)
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
US6847434B2
(en)
*
|
2000-02-10 |
2005-01-25 |
Asml Holding N.V. |
Method and apparatus for a pellicle frame with porous filtering inserts
|
JP2001272604A
(ja)
|
2000-03-27 |
2001-10-05 |
Olympus Optical Co Ltd |
液浸対物レンズおよびそれを用いた光学装置
|
AU2001259331A1
(en)
*
|
2000-05-03 |
2001-11-12 |
Silicon Valley Group Inc |
Non-contact seal using purge gas
|
TW591653B
(en)
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
US20020163629A1
(en)
|
2001-05-07 |
2002-11-07 |
Michael Switkes |
Methods and apparatus employing an index matching medium
|
US6600547B2
(en)
|
2001-09-24 |
2003-07-29 |
Nikon Corporation |
Sliding seal
|
CN1791839A
(zh)
|
2001-11-07 |
2006-06-21 |
应用材料有限公司 |
光点格栅阵列光刻机
|
EP1480929A2
(de)
|
2002-03-06 |
2004-12-01 |
E.I. du Pont de Nemours and Company |
Vakuumultravioletdurchsichtige fluor enthaltende verbindungen
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
JPWO2003085708A1
(ja)
|
2002-04-09 |
2005-08-18 |
株式会社ニコン |
露光方法及び露光装置、並びにデバイス製造方法
|
JP2005536775A
(ja)
|
2002-08-23 |
2005-12-02 |
株式会社ニコン |
投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
EP2495613B1
(de)
|
2002-11-12 |
2013-07-31 |
ASML Netherlands B.V. |
Lithografische Vorrichtung
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
JP3953460B2
(ja)
|
2002-11-12 |
2007-08-08 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ投影装置
|
CN100470367C
(zh)
|
2002-11-12 |
2009-03-18 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
CN101424881B
(zh)
|
2002-11-12 |
2011-11-30 |
Asml荷兰有限公司 |
光刻投射装置
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
DE10253679A1
(de)
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
SG165169A1
(en)
|
2002-12-10 |
2010-10-28 |
Nikon Corp |
Liquid immersion exposure apparatus
|
KR101101737B1
(ko)
|
2002-12-10 |
2012-01-05 |
가부시키가이샤 니콘 |
노광장치 및 노광방법, 디바이스 제조방법
|
CN1723541B
(zh)
|
2002-12-10 |
2010-06-02 |
株式会社尼康 |
曝光装置和器件制造方法
|
SG171468A1
(en)
|
2002-12-10 |
2011-06-29 |
Nikon Corp |
Exposure apparatus and method for producing device
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
JP4232449B2
(ja)
|
2002-12-10 |
2009-03-04 |
株式会社ニコン |
露光方法、露光装置、及びデバイス製造方法
|
DE10257766A1
(de)
|
2002-12-10 |
2004-07-15 |
Carl Zeiss Smt Ag |
Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
|
AU2003302831A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure method, exposure apparatus and method for manufacturing device
|
EP1571701A4
(de)
|
2002-12-10 |
2008-04-09 |
Nikon Corp |
Belichtungsvorrichtungund verfahren zur bauelementeherstellung
|
AU2003289272A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Surface position detection apparatus, exposure method, and device porducing method
|
KR20050085026A
(ko)
|
2002-12-10 |
2005-08-29 |
가부시키가이샤 니콘 |
광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
|
EP1429190B1
(de)
|
2002-12-10 |
2012-05-09 |
Canon Kabushiki Kaisha |
Belichtungsapparat und -verfahren
|
KR20050085235A
(ko)
|
2002-12-10 |
2005-08-29 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
US7358507B2
(en)
|
2002-12-13 |
2008-04-15 |
Koninklijke Philips Electronics N.V. |
Liquid removal in a method and device for irradiating spots on a layer
|
EP1579435B1
(de)
|
2002-12-19 |
2007-06-27 |
Koninklijke Philips Electronics N.V. |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
US7010958B2
(en)
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
ATE335272T1
(de)
|
2002-12-19 |
2006-08-15 |
Koninkl Philips Electronics Nv |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
US7090964B2
(en)
|
2003-02-21 |
2006-08-15 |
Asml Holding N.V. |
Lithographic printing with polarized light
|
JP2004259786A
(ja)
|
2003-02-24 |
2004-09-16 |
Canon Inc |
露光装置
|
US6943941B2
(en)
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US7206059B2
(en)
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
WO2004086470A1
(ja)
|
2003-03-25 |
2004-10-07 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
KR20110104084A
(ko)
|
2003-04-09 |
2011-09-21 |
가부시키가이샤 니콘 |
액침 리소그래피 유체 제어 시스템
|
SG141426A1
(en)
|
2003-04-10 |
2008-04-28 |
Nikon Corp |
Environmental system including vacuum scavange for an immersion lithography apparatus
|
WO2004090633A2
(en)
|
2003-04-10 |
2004-10-21 |
Nikon Corporation |
An electro-osmotic element for an immersion lithography apparatus
|
EP3352015A1
(de)
|
2003-04-10 |
2018-07-25 |
Nikon Corporation |
Umweltsystem mit einer transportregion für eine immersionslithographievorrichtung
|
JP4488005B2
(ja)
|
2003-04-10 |
2010-06-23 |
株式会社ニコン |
液浸リソグラフィ装置用の液体を捕集するための流出通路
|
CN101980087B
(zh)
|
2003-04-11 |
2013-03-27 |
株式会社尼康 |
浸没曝光设备以及浸没曝光方法
|
WO2004092830A2
(en)
|
2003-04-11 |
2004-10-28 |
Nikon Corporation |
Liquid jet and recovery system for immersion lithography
|
SG2014015135A
(en)
|
2003-04-11 |
2015-06-29 |
Nippon Kogaku Kk |
Cleanup method for optics in immersion lithography
|
JP2006523958A
(ja)
|
2003-04-17 |
2006-10-19 |
株式会社ニコン |
液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
|
JP4146755B2
(ja)
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
JP4025683B2
(ja)
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
JP4084710B2
(ja)
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
JP4054285B2
(ja)
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
KR101674329B1
(ko)
|
2003-06-19 |
2016-11-08 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조방법
|
US6867844B2
(en)
*
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
JP4084712B2
(ja)
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
JP4029064B2
(ja)
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
EP1498778A1
(de)
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
EP1494074A1
(de)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
US7236232B2
(en)
|
2003-07-01 |
2007-06-26 |
Nikon Corporation |
Using isotopically specified fluids as optical elements
|
WO2005006417A1
(ja)
*
|
2003-07-09 |
2005-01-20 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
US7157275B2
(en)
|
2003-08-15 |
2007-01-02 |
Becton, Dickinson And Company |
Peptides for enhanced cell attachment and growth
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
US7014966B2
(en)
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
KR101238114B1
(ko)
|
2003-09-03 |
2013-02-27 |
가부시키가이샤 니콘 |
액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
|
US6961186B2
(en)
|
2003-09-26 |
2005-11-01 |
Takumi Technology Corp. |
Contact printing using a magnified mask image
|
EP1519231B1
(de)
|
2003-09-29 |
2005-12-21 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
US7369217B2
(en)
|
2003-10-03 |
2008-05-06 |
Micronic Laser Systems Ab |
Method and device for immersion lithography
|
US7678527B2
(en)
|
2003-10-16 |
2010-03-16 |
Intel Corporation |
Methods and compositions for providing photoresist with improved properties for contacting liquids
|
US7352433B2
(en)
|
2003-10-28 |
2008-04-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7924397B2
(en)
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
US7545481B2
(en)
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP4747263B2
(ja)
|
2003-11-24 |
2011-08-17 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
オブジェクティブにおける光学素子のための保持装置
|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
Advanced Micro Devices, Inc. |
Immersion lithographic process using a conforming immersion medium
|
AU2004203138B2
(en)
|
2004-07-13 |
2011-08-04 |
Robert William Cox |
Golf swing training apparatus
|