DE602004030765D1 - Nand-flash-speicher, der programmstörungen mit einer selbstverstärkenden technik vermeidet - Google Patents

Nand-flash-speicher, der programmstörungen mit einer selbstverstärkenden technik vermeidet

Info

Publication number
DE602004030765D1
DE602004030765D1 DE602004030765T DE602004030765T DE602004030765D1 DE 602004030765 D1 DE602004030765 D1 DE 602004030765D1 DE 602004030765 T DE602004030765 T DE 602004030765T DE 602004030765 T DE602004030765 T DE 602004030765T DE 602004030765 D1 DE602004030765 D1 DE 602004030765D1
Authority
DE
Germany
Prior art keywords
flash memory
memory system
self
nand
nand flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004030765T
Other languages
English (en)
Inventor
Jeffrey W Lutze
Jian Chen
Yan Li
Masaaki Higashitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602004030765D1 publication Critical patent/DE602004030765D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
DE602004030765T 2003-03-05 2004-02-05 Nand-flash-speicher, der programmstörungen mit einer selbstverstärkenden technik vermeidet Expired - Lifetime DE602004030765D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/379,608 US6859397B2 (en) 2003-03-05 2003-03-05 Source side self boosting technique for non-volatile memory
PCT/US2004/003290 WO2004079747A1 (en) 2003-03-05 2004-02-05 Nand flash memory avoiding program disturb with a self boosting technique

Publications (1)

Publication Number Publication Date
DE602004030765D1 true DE602004030765D1 (de) 2011-02-10

Family

ID=32926708

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004030765T Expired - Lifetime DE602004030765D1 (de) 2003-03-05 2004-02-05 Nand-flash-speicher, der programmstörungen mit einer selbstverstärkenden technik vermeidet

Country Status (9)

Country Link
US (2) US6859397B2 (de)
EP (1) EP1599881B1 (de)
JP (1) JP4431139B2 (de)
KR (1) KR100813287B1 (de)
CN (1) CN100568392C (de)
AT (1) ATE493735T1 (de)
DE (1) DE602004030765D1 (de)
TW (1) TWI248084B (de)
WO (1) WO2004079747A1 (de)

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KR100813287B1 (ko) 2008-03-13
US6859397B2 (en) 2005-02-22
KR20060002801A (ko) 2006-01-09
ATE493735T1 (de) 2011-01-15
CN1777960A (zh) 2006-05-24
WO2004079747A1 (en) 2004-09-16
JP2006522428A (ja) 2006-09-28
CN100568392C (zh) 2009-12-09
TW200426842A (en) 2004-12-01
US20050128810A1 (en) 2005-06-16
EP1599881A1 (de) 2005-11-30
US6975537B2 (en) 2005-12-13
JP4431139B2 (ja) 2010-03-10
TWI248084B (en) 2006-01-21
US20040174748A1 (en) 2004-09-09
EP1599881B1 (de) 2010-12-29

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