DE602005004949D1 - Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung - Google Patents

Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung

Info

Publication number
DE602005004949D1
DE602005004949D1 DE602005004949T DE602005004949T DE602005004949D1 DE 602005004949 D1 DE602005004949 D1 DE 602005004949D1 DE 602005004949 T DE602005004949 T DE 602005004949T DE 602005004949 T DE602005004949 T DE 602005004949T DE 602005004949 D1 DE602005004949 D1 DE 602005004949D1
Authority
DE
Germany
Prior art keywords
making
lithographic apparatus
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602005004949T
Other languages
English (en)
Other versions
DE602005004949T2 (de
Inventor
Der Feltz Gustaaf Willem Van
Johan Christiaan Ge Hoefnagels
Cheng-Qun Gui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602005004949D1 publication Critical patent/DE602005004949D1/de
Application granted granted Critical
Publication of DE602005004949T2 publication Critical patent/DE602005004949T2/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
DE602005004949T 2004-03-29 2005-03-15 Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung Expired - Fee Related DE602005004949T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US811070 1985-12-19
US10/811,070 US7561251B2 (en) 2004-03-29 2004-03-29 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
DE602005004949D1 true DE602005004949D1 (de) 2008-04-10
DE602005004949T2 DE602005004949T2 (de) 2009-03-12

Family

ID=34887663

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005004949T Expired - Fee Related DE602005004949T2 (de) 2004-03-29 2005-03-15 Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung

Country Status (8)

Country Link
US (2) US7561251B2 (de)
EP (1) EP1582928B1 (de)
JP (1) JP4459850B2 (de)
KR (2) KR20060044936A (de)
CN (1) CN1677246B (de)
DE (1) DE602005004949T2 (de)
SG (1) SG115813A1 (de)
TW (1) TWI282490B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7561251B2 (en) * 2004-03-29 2009-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1804278A4 (de) * 2004-09-14 2011-03-02 Nikon Corp Korrekturverfahren und belichtungseinrichtung
US7830493B2 (en) * 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
US7391503B2 (en) * 2005-10-04 2008-06-24 Asml Netherlands B.V. System and method for compensating for thermal expansion of lithography apparatus or substrate
US8122846B2 (en) 2005-10-26 2012-02-28 Micronic Mydata AB Platforms, apparatuses, systems and methods for processing and analyzing substrates
US20070182808A1 (en) 2005-10-26 2007-08-09 Lars Stiblert Writing apparatuses and methods
KR101415313B1 (ko) * 2006-02-28 2014-07-04 마이크로닉 마이데이터 아베 기판 처리 및 분석용 플랫폼, 장치, 시스템, 그리고 방법
US20090153749A1 (en) * 2007-12-14 2009-06-18 Stephen Randall Mixon Portable projector background color correction scheme
CN102414622A (zh) * 2009-04-27 2012-04-11 Asml荷兰有限公司 光刻设备和检测器设备
KR101698141B1 (ko) * 2009-12-08 2017-01-19 삼성전자 주식회사 마스크리스 노광장치 및 그 제어방법
EP2365390A3 (de) 2010-03-12 2017-10-04 ASML Netherlands B.V. Lithographische Vorrichtung und Verfahren
KR101136722B1 (ko) * 2010-06-30 2012-04-19 (주)인터플렉스 인쇄회로기판 제조방법
WO2014140046A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Mechanically produced alignment fiducial method and device
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
JP6676527B6 (ja) * 2013-11-27 2020-05-20 東京エレクトロン株式会社 光学投影を使用する基板チューニングシステム及び方法
US9703212B2 (en) * 2015-03-12 2017-07-11 Kabushiki Kaisha Toshiba Exposure apparatus
WO2018091189A2 (en) 2016-11-15 2018-05-24 Asml Netherlands B.V. Radiation analysis system
US10444643B2 (en) * 2017-03-24 2019-10-15 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning
KR102511272B1 (ko) * 2018-02-23 2023-03-16 삼성전자주식회사 노광 장치 및 이를 이용하는 반도체 장치의 제조 방법
CN110361938B (zh) * 2018-03-26 2021-03-02 上海微电子装备(集团)股份有限公司 一种曝光方法及半导体器件的制造方法
US10996572B2 (en) * 2019-02-15 2021-05-04 Applied Materials, Inc. Model based dynamic positional correction for digital lithography tools
US11774869B2 (en) 2019-04-10 2023-10-03 Asml Netherlands B.V. Method and system for determining overlay

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6078454A (ja) 1983-10-05 1985-05-04 Nippon Kogaku Kk <Nikon> 投影露光装置
US4669842A (en) * 1983-12-08 1987-06-02 Canon Kabushiki Kaisha Projection optical device
JPS6119129A (ja) 1984-07-05 1986-01-28 Nippon Kogaku Kk <Nikon> 投影光学装置
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH0276212A (ja) * 1988-09-13 1990-03-15 Canon Inc 多重露光方法
DE59105735D1 (de) 1990-05-02 1995-07-20 Fraunhofer Ges Forschung Belichtungsvorrichtung.
US5117255A (en) * 1990-09-19 1992-05-26 Nikon Corporation Projection exposure apparatus
JP3047461B2 (ja) 1990-11-26 2000-05-29 株式会社ニコン 投影露光装置、投影露光方法、及び半導体集積回路製造方法
JPH05144701A (ja) 1991-11-22 1993-06-11 Canon Inc 投影露光装置及びそれを用いた半導体素子の製造方法
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US6219015B1 (en) 1992-04-28 2001-04-17 The Board Of Directors Of The Leland Stanford, Junior University Method and apparatus for using an array of grating light valves to produce multicolor optical images
JPH05315222A (ja) 1992-05-13 1993-11-26 Nikon Corp 位置合わせ方法
JP3224041B2 (ja) 1992-07-29 2001-10-29 株式会社ニコン 露光方法及び装置
JPH06181168A (ja) 1992-12-14 1994-06-28 Nikon Corp 位置合わせ方法
US5581324A (en) 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
US5729331A (en) 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
JP3339149B2 (ja) 1993-12-08 2002-10-28 株式会社ニコン 走査型露光装置ならびに露光方法
US5677703A (en) 1995-01-06 1997-10-14 Texas Instruments Incorporated Data loading circuit for digital micro-mirror device
US5530482A (en) 1995-03-21 1996-06-25 Texas Instruments Incorporated Pixel data processing for spatial light modulator having staggered pixels
AU7438296A (en) 1995-10-12 1997-04-30 Magapanel Corporation Magnification control and thermal substrate chuck for photolithography
JPH09162106A (ja) 1995-12-11 1997-06-20 Nikon Corp 走査型露光装置
JP3689949B2 (ja) * 1995-12-19 2005-08-31 株式会社ニコン 投影露光装置、及び該投影露光装置を用いたパターン形成方法
US6133986A (en) 1996-02-28 2000-10-17 Johnson; Kenneth C. Microlens scanner for microlithography and wide-field confocal microscopy
JPH10208994A (ja) 1997-01-16 1998-08-07 Nec Corp 露光方法及び露光装置
EP0956516B1 (de) 1997-01-29 2002-04-10 Micronic Laser Systems Ab Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
US6177980B1 (en) 1997-02-20 2001-01-23 Kenneth C. Johnson High-throughput, maskless lithography system
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
JPH10261565A (ja) * 1997-03-18 1998-09-29 Nikon Corp 荷電粒子線露光装置
US5982553A (en) 1997-03-20 1999-11-09 Silicon Light Machines Display device incorporating one-dimensional grating light-valve array
US6061119A (en) * 1997-04-14 2000-05-09 Nikon Corporation Method of measuring image-forming error of projection optical system, method of manufacturing exposure apparatus, and method of manufacturing semiconductor device
JP3352354B2 (ja) * 1997-04-28 2002-12-03 キヤノン株式会社 露光装置およびデバイス製造方法
JP3634563B2 (ja) * 1997-05-09 2005-03-30 キヤノン株式会社 露光方法および装置並びにデバイス製造方法
JPH10326732A (ja) 1997-05-26 1998-12-08 Nikon Corp 焦点位置検出装置、露光装置及び露光方法
US5834785A (en) 1997-06-06 1998-11-10 Nikon Corporation Method and apparatus to compensate for thermal expansion in a lithographic process
JPH10328732A (ja) 1997-06-06 1998-12-15 Mitsubishi Shindoh Co Ltd 金属管の平滑化方法および平滑化装置
SE9800665D0 (sv) 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
US6424879B1 (en) 1999-04-13 2002-07-23 Applied Materials, Inc. System and method to correct for distortion caused by bulk heating in a substrate
US6235439B1 (en) * 1999-05-19 2001-05-22 International Business Machines Corporation Method for controlling image size of integrated circuits on wafers supported on hot plates during post exposure baking of the wafers
JP2003500847A (ja) 1999-05-20 2003-01-07 マイクロニック レーザー システムズ アクチボラゲット リソグラフィに於ける誤差低減方法
WO2001011431A2 (en) * 1999-08-06 2001-02-15 Applied Materials, Inc. Method and apparatus of holding semiconductor wafers for lithography and other wafer processes
KR100827874B1 (ko) 2000-05-22 2008-05-07 가부시키가이샤 니콘 노광 장치, 노광 장치의 제조 방법, 노광 방법, 마이크로 장치의 제조 방법, 및 디바이스의 제조 방법
US6699630B2 (en) * 2000-07-07 2004-03-02 Nikon Corporation Method and apparatus for exposure, and device manufacturing method
JP3563384B2 (ja) 2001-11-08 2004-09-08 大日本スクリーン製造株式会社 画像記録装置
TWI298825B (en) 2002-06-12 2008-07-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6825681B2 (en) * 2002-07-19 2004-11-30 Delta Design, Inc. Thermal control of a DUT using a thermal control substrate
US6654660B1 (en) 2002-11-04 2003-11-25 Advanced Micro Devices, Inc. Controlling thermal expansion of mask substrates by scatterometry
US6870554B2 (en) 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
EP1482373A1 (de) 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1482375B1 (de) 2003-05-30 2014-09-17 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1513017A1 (de) 2003-09-04 2005-03-09 ASML Netherlands B.V. Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
EP1513021B1 (de) 2003-09-04 2007-10-03 ASML Netherlands B.V. Lithographischer Apparat und Methode zur Kompensation von thermischer Deformation in einem lithographischen Apparat
US7250237B2 (en) 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
US7561251B2 (en) * 2004-03-29 2009-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8139218B2 (en) 2005-07-06 2012-03-20 Asml Netherlands B.V. Substrate distortion measurement
US8194242B2 (en) 2005-07-29 2012-06-05 Asml Netherlands B.V. Substrate distortion measurement
US7830493B2 (en) 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
US7391503B2 (en) 2005-10-04 2008-06-24 Asml Netherlands B.V. System and method for compensating for thermal expansion of lithography apparatus or substrate

Also Published As

Publication number Publication date
US20100014059A1 (en) 2010-01-21
KR20060044936A (ko) 2006-05-16
CN1677246A (zh) 2005-10-05
JP2005286333A (ja) 2005-10-13
EP1582928B1 (de) 2008-02-27
TW200602813A (en) 2006-01-16
KR20070058418A (ko) 2007-06-08
JP4459850B2 (ja) 2010-04-28
DE602005004949T2 (de) 2009-03-12
TWI282490B (en) 2007-06-11
CN1677246B (zh) 2011-09-28
US7561251B2 (en) 2009-07-14
EP1582928A1 (de) 2005-10-05
US20050213067A1 (en) 2005-09-29
US8502954B2 (en) 2013-08-06
SG115813A1 (en) 2005-10-28

Similar Documents

Publication Publication Date Title
DE602005010014D1 (de) Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
DE602005004949D1 (de) Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
DE602005022957D1 (de) Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
DE602005020720D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005002155D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005000696D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005000147D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005021180D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005004856D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005020893D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602006001507D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005018150D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005020891D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602007012636D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005001835D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60302897D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005014731D1 (de) Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
DE602005007563D1 (de) Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung
DE602004025893D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602007011160D1 (de) Lithographische Vorrichtung und Methode zur Herstellung einer Vorrichtung
DE602007012032D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60319658D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60323927D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005013038D1 (de) Lithographischer Apparat, Verfahren zur Herstellung einer Vorrichtung
DE602006018552D1 (de) Lithografischer Apparat mit zwei Trägerplatten und Verfahren zur Herstellung einer Vorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee