DE602005005840D1 - 3d-verbindung mit herausragenden kontakten - Google Patents

3d-verbindung mit herausragenden kontakten

Info

Publication number
DE602005005840D1
DE602005005840D1 DE602005005840T DE602005005840T DE602005005840D1 DE 602005005840 D1 DE602005005840 D1 DE 602005005840D1 DE 602005005840 T DE602005005840 T DE 602005005840T DE 602005005840 T DE602005005840 T DE 602005005840T DE 602005005840 D1 DE602005005840 D1 DE 602005005840D1
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DE
Germany
Prior art keywords
connection
outstanding contacts
outstanding
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005005840T
Other languages
English (en)
Other versions
DE602005005840T2 (de
Inventor
Chien-Hua Chen
Zhizhang Chen
Neal W Meyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
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Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of DE602005005840D1 publication Critical patent/DE602005005840D1/de
Application granted granted Critical
Publication of DE602005005840T2 publication Critical patent/DE602005005840T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/13001Core members of the bump connector
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    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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    • H01L2225/06541Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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    • H01L2924/143Digital devices
    • H01L2924/1433Application-specific integrated circuit [ASIC]
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides
DE602005005840T 2004-10-07 2005-08-29 3d-verbindung mit herausragenden kontakten Active DE602005005840T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US960827 2004-10-07
US10/960,827 US7262495B2 (en) 2004-10-07 2004-10-07 3D interconnect with protruding contacts
PCT/US2005/030680 WO2006041580A1 (en) 2004-10-07 2005-08-29 3d interconnect with protruding contacts

Publications (2)

Publication Number Publication Date
DE602005005840D1 true DE602005005840D1 (de) 2008-05-15
DE602005005840T2 DE602005005840T2 (de) 2009-05-14

Family

ID=35677540

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005005840T Active DE602005005840T2 (de) 2004-10-07 2005-08-29 3d-verbindung mit herausragenden kontakten

Country Status (5)

Country Link
US (2) US7262495B2 (de)
EP (1) EP1797591B1 (de)
DE (1) DE602005005840T2 (de)
TW (1) TWI298928B (de)
WO (1) WO2006041580A1 (de)

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EP1797591A1 (de) 2007-06-20
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US20070254405A1 (en) 2007-11-01
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