DE602005022229D1 - Nichtflüchtiger nanokristallspeicher und verfahren dafür - Google Patents
Nichtflüchtiger nanokristallspeicher und verfahren dafürInfo
- Publication number
- DE602005022229D1 DE602005022229D1 DE602005022229T DE602005022229T DE602005022229D1 DE 602005022229 D1 DE602005022229 D1 DE 602005022229D1 DE 602005022229 T DE602005022229 T DE 602005022229T DE 602005022229 T DE602005022229 T DE 602005022229T DE 602005022229 D1 DE602005022229 D1 DE 602005022229D1
- Authority
- DE
- Germany
- Prior art keywords
- concentration
- volatile
- method therefor
- nitrogen
- nanocrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002159 nanocrystal Substances 0.000 title abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract 3
- 230000005524 hole trap Effects 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/043,826 US7361567B2 (en) | 2005-01-26 | 2005-01-26 | Non-volatile nanocrystal memory and method therefor |
PCT/US2005/045207 WO2006080999A2 (en) | 2005-01-26 | 2005-12-14 | Non-volatile nanocrystal memory and method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005022229D1 true DE602005022229D1 (de) | 2010-08-19 |
Family
ID=36697390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005022229T Active DE602005022229D1 (de) | 2005-01-26 | 2005-12-14 | Nichtflüchtiger nanokristallspeicher und verfahren dafür |
Country Status (9)
Country | Link |
---|---|
US (1) | US7361567B2 (de) |
EP (1) | EP1844492B1 (de) |
JP (1) | JP4980931B2 (de) |
KR (1) | KR101219067B1 (de) |
CN (1) | CN101438392A (de) |
AT (1) | ATE473515T1 (de) |
DE (1) | DE602005022229D1 (de) |
TW (1) | TWI407492B (de) |
WO (1) | WO2006080999A2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100673205B1 (ko) * | 2004-11-24 | 2007-01-22 | 주식회사 하이닉스반도체 | 플래쉬 메모리소자의 제조방법 |
US20060166435A1 (en) * | 2005-01-21 | 2006-07-27 | Teo Lee W | Synthesis of GE nanocrystal memory cell and using a block layer to control oxidation kinetics |
US7338894B2 (en) * | 2005-01-26 | 2008-03-04 | Freescale Semiconductor, Inc. | Semiconductor device having nitridated oxide layer and method therefor |
JP2007036025A (ja) * | 2005-07-28 | 2007-02-08 | Nec Electronics Corp | 不揮発性メモリ半導体装置およびその製造方法 |
US7525149B2 (en) * | 2005-08-24 | 2009-04-28 | Micron Technology, Inc. | Combined volatile and non-volatile memory device with graded composition insulator stack |
TWI289336B (en) * | 2005-11-07 | 2007-11-01 | Ind Tech Res Inst | Nanocrystal memory component, manufacturing method thereof and memory comprising the same |
US7767588B2 (en) * | 2006-02-28 | 2010-08-03 | Freescale Semiconductor, Inc. | Method for forming a deposited oxide layer |
US7773493B2 (en) * | 2006-09-29 | 2010-08-10 | Intel Corporation | Probe-based storage device |
US8686490B2 (en) * | 2006-12-20 | 2014-04-01 | Sandisk Corporation | Electron blocking layers for electronic devices |
US20080150004A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US20080150009A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US7847341B2 (en) | 2006-12-20 | 2010-12-07 | Nanosys, Inc. | Electron blocking layers for electronic devices |
US7846793B2 (en) * | 2007-10-03 | 2010-12-07 | Applied Materials, Inc. | Plasma surface treatment for SI and metal nanocrystal nucleation |
US7871886B2 (en) * | 2008-12-19 | 2011-01-18 | Freescale Semiconductor, Inc. | Nanocrystal memory with differential energy bands and method of formation |
US7799634B2 (en) * | 2008-12-19 | 2010-09-21 | Freescale Semiconductor, Inc. | Method of forming nanocrystals |
US8021970B2 (en) * | 2009-03-20 | 2011-09-20 | Freescale Semiconductor, Inc. | Method of annealing a dielectric layer |
JP6125846B2 (ja) * | 2012-03-22 | 2017-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
CN102709330B (zh) * | 2012-05-22 | 2016-04-27 | 上海华力微电子有限公司 | 一种具有低操作电压的be-sonos结构器件及形成方法 |
CN102709315A (zh) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | 一种具有锥形能带的be-sonos结构器件及形成方法 |
US8994006B2 (en) * | 2012-10-02 | 2015-03-31 | International Business Machines Corporation | Non-volatile memory device employing semiconductor nanoparticles |
US8895397B1 (en) | 2013-10-15 | 2014-11-25 | Globalfoundries Singapore Pte. Ltd. | Methods for forming thin film storage memory cells |
US9171858B2 (en) | 2013-12-30 | 2015-10-27 | Globalfoundries Singapore Pte. Ltd. | Multi-level memory cells and methods for forming multi-level memory cells |
US9953841B2 (en) * | 2015-05-08 | 2018-04-24 | Macronix International Co., Ltd. | Semiconductor device and method of fabricating the same |
US11756832B2 (en) * | 2019-09-30 | 2023-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate structures in semiconductor devices |
DE102020100099A1 (de) | 2019-09-30 | 2021-04-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gatestrukturen in halbleitervorrichtungen |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6320784B1 (en) | 2000-03-14 | 2001-11-20 | Motorola, Inc. | Memory cell and method for programming thereof |
US6297095B1 (en) | 2000-06-16 | 2001-10-02 | Motorola, Inc. | Memory device that includes passivated nanoclusters and method for manufacture |
WO2001099167A2 (en) * | 2000-06-16 | 2001-12-27 | Motorola, Inc. | Memory device including nanoclusters and method for manufacture |
US6413819B1 (en) | 2000-06-16 | 2002-07-02 | Motorola, Inc. | Memory device and method for using prefabricated isolated storage elements |
TW525263B (en) * | 2000-09-28 | 2003-03-21 | Chartered Semiconductor Mfg | Formation of interfacial oxide layer at the Si3N4/Si interface by H2/O2 annealing |
US6444545B1 (en) | 2000-12-19 | 2002-09-03 | Motorola, Inc. | Device structure for storing charge and method therefore |
JP2002261175A (ja) | 2000-12-28 | 2002-09-13 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2002231834A (ja) * | 2001-02-02 | 2002-08-16 | Ricoh Co Ltd | 半導体記憶装置 |
US6713127B2 (en) | 2001-12-28 | 2004-03-30 | Applied Materials, Inc. | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
TW569377B (en) * | 2002-03-20 | 2004-01-01 | Taiwan Semiconductor Mfg | Improvement method for thickness uniformity of super-thin nitridation gate dielectric |
JP2004207613A (ja) * | 2002-12-26 | 2004-07-22 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7338894B2 (en) * | 2005-01-26 | 2008-03-04 | Freescale Semiconductor, Inc. | Semiconductor device having nitridated oxide layer and method therefor |
-
2005
- 2005-01-26 US US11/043,826 patent/US7361567B2/en not_active Expired - Fee Related
- 2005-12-14 KR KR1020077017264A patent/KR101219067B1/ko not_active IP Right Cessation
- 2005-12-14 DE DE602005022229T patent/DE602005022229D1/de active Active
- 2005-12-14 WO PCT/US2005/045207 patent/WO2006080999A2/en active Application Filing
- 2005-12-14 EP EP05854006A patent/EP1844492B1/de not_active Not-in-force
- 2005-12-14 AT AT05854006T patent/ATE473515T1/de not_active IP Right Cessation
- 2005-12-14 CN CNA2005800409629A patent/CN101438392A/zh active Pending
- 2005-12-14 JP JP2007552129A patent/JP4980931B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-04 TW TW095100396A patent/TWI407492B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP1844492B1 (de) | 2010-07-07 |
TW200629383A (en) | 2006-08-16 |
KR101219067B1 (ko) | 2013-01-18 |
JP2008532260A (ja) | 2008-08-14 |
WO2006080999A3 (en) | 2009-04-23 |
KR20070099625A (ko) | 2007-10-09 |
TWI407492B (zh) | 2013-09-01 |
WO2006080999A2 (en) | 2006-08-03 |
CN101438392A (zh) | 2009-05-20 |
EP1844492A4 (de) | 2009-10-21 |
US20060166452A1 (en) | 2006-07-27 |
ATE473515T1 (de) | 2010-07-15 |
US7361567B2 (en) | 2008-04-22 |
EP1844492A2 (de) | 2007-10-17 |
JP4980931B2 (ja) | 2012-07-18 |
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