DE602005022487D1 - Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten - Google Patents

Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten

Info

Publication number
DE602005022487D1
DE602005022487D1 DE602005022487T DE602005022487T DE602005022487D1 DE 602005022487 D1 DE602005022487 D1 DE 602005022487D1 DE 602005022487 T DE602005022487 T DE 602005022487T DE 602005022487 T DE602005022487 T DE 602005022487T DE 602005022487 D1 DE602005022487 D1 DE 602005022487D1
Authority
DE
Germany
Prior art keywords
data
volatile memory
copy
exemplary embodiments
previous data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005022487T
Other languages
English (en)
Inventor
Sergey Anatolievich Gorobets
Yan Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602005022487D1 publication Critical patent/DE602005022487D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
DE602005022487T 2004-12-14 2005-11-28 Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten Active DE602005022487D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/013,125 US7120051B2 (en) 2004-12-14 2004-12-14 Pipelined programming of non-volatile memories using early data
PCT/US2005/043020 WO2006065518A1 (en) 2004-12-14 2005-11-28 Pipelined programming of non-volatile memories using early data

Publications (1)

Publication Number Publication Date
DE602005022487D1 true DE602005022487D1 (de) 2010-09-02

Family

ID=36583610

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005022487T Active DE602005022487D1 (de) 2004-12-14 2005-11-28 Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten

Country Status (10)

Country Link
US (3) US7120051B2 (de)
EP (1) EP1829045B1 (de)
JP (1) JP4372196B2 (de)
KR (1) KR101193584B1 (de)
CN (1) CN100543878C (de)
AT (1) ATE475185T1 (de)
DE (1) DE602005022487D1 (de)
IL (1) IL183833A0 (de)
TW (1) TWI413125B (de)
WO (1) WO2006065518A1 (de)

Families Citing this family (336)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6687158B2 (en) * 2001-12-21 2004-02-03 Fujitsu Limited Gapless programming for a NAND type flash memory
US7881133B2 (en) * 2003-11-11 2011-02-01 Samsung Electronics Co., Ltd. Method of managing a flash memory and the flash memory
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US7298648B2 (en) * 2004-11-19 2007-11-20 Samsung Electronics Co., Ltd. Page buffer and multi-state nonvolatile memory device including the same
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7158421B2 (en) 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7409473B2 (en) * 2004-12-21 2008-08-05 Sandisk Corporation Off-chip data relocation
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
KR100890672B1 (ko) * 2005-02-03 2009-03-26 가부시끼가이샤 도시바 불휘발성 반도체 기억 장치 및 그 동작 방법
US7447078B2 (en) * 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7339834B2 (en) 2005-06-03 2008-03-04 Sandisk Corporation Starting program voltage shift with cycling of non-volatile memory
KR100713984B1 (ko) * 2005-09-15 2007-05-04 주식회사 하이닉스반도체 멀티-플레인 구조를 갖는 비휘발성 메모리 장치의 프로그램방법
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
JP4960378B2 (ja) 2005-12-06 2012-06-27 サンディスク コーポレイション 不揮発性メモリの読み出し外乱を低減する方法
US7355888B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
US7355889B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Method for programming non-volatile memory with reduced program disturb using modified pass voltages
US7365018B2 (en) * 2005-12-28 2008-04-29 Sandisk Corporation Fabrication of semiconductor device for flash memory with increased select gate width
JP4233563B2 (ja) * 2005-12-28 2009-03-04 パナソニック株式会社 多値データを記憶する不揮発性半導体記憶装置
CN101395673B (zh) 2006-03-03 2011-09-21 桑迪士克股份有限公司 对浮动栅极耦合具有补偿的非易失性存储装置的读取操作
EP1833058B1 (de) * 2006-03-10 2010-08-11 STMicroelectronics Srl Verfahren zum Programmieren und Löschen eines nichtflüchtigen Speichers, insbesonders für Flash-Typ Speicher.
WO2007131127A2 (en) * 2006-05-05 2007-11-15 Sandisk Corporation Merging queued memory operation in a non-volatile memory
WO2007131062A2 (en) 2006-05-05 2007-11-15 Sandisk Corporation Non-volatile memory with background data latch caching during read operations and methods therefor
KR101202537B1 (ko) * 2006-05-12 2012-11-19 애플 인크. 메모리 디바이스를 위한 결합된 왜곡 추정 및 에러 보정 코딩
WO2007132452A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
KR101375955B1 (ko) 2006-05-12 2014-03-18 애플 인크. 메모리 디바이스 내의 왜곡 추정 및 상쇄
US8239735B2 (en) * 2006-05-12 2012-08-07 Apple Inc. Memory Device with adaptive capacity
WO2008097320A2 (en) * 2006-06-01 2008-08-14 Virginia Tech Intellectual Properties, Inc. Premixing injector for gas turbine engines
US7586784B2 (en) * 2006-06-09 2009-09-08 Micron Technology, Inc. Apparatus and methods for programming multilevel-cell NAND memory devices
US7391650B2 (en) * 2006-06-16 2008-06-24 Sandisk Corporation Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7342831B2 (en) * 2006-06-16 2008-03-11 Sandisk Corporation System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7349261B2 (en) * 2006-06-19 2008-03-25 Sandisk Corporation Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7492633B2 (en) * 2006-06-19 2009-02-17 Sandisk Corporation System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7489549B2 (en) * 2006-06-22 2009-02-10 Sandisk Corporation System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US7486561B2 (en) * 2006-06-22 2009-02-03 Sandisk Corporation Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US20070297247A1 (en) * 2006-06-26 2007-12-27 Gerrit Jan Hemink Method for programming non-volatile memory using variable amplitude programming pulses
US7885119B2 (en) 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7894269B2 (en) * 2006-07-20 2011-02-22 Sandisk Corporation Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
US7567461B2 (en) 2006-08-18 2009-07-28 Micron Technology, Inc. Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
WO2008026203A2 (en) 2006-08-27 2008-03-06 Anobit Technologies Estimation of non-linear distortion in memory devices
US7440326B2 (en) 2006-09-06 2008-10-21 Sandisk Corporation Programming non-volatile memory with improved boosting
EP2070090B1 (de) 2006-09-08 2014-01-08 SanDisk Technologies Inc. Pseudozufalls- und befehlsgesteuerte bitkompensation für taktungseffekte in flash-speichern und entsprechende verfahren
US7606966B2 (en) * 2006-09-08 2009-10-20 Sandisk Corporation Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
US7885112B2 (en) * 2007-09-07 2011-02-08 Sandisk Corporation Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
US7734861B2 (en) 2006-09-08 2010-06-08 Sandisk Corporation Pseudo random and command driven bit compensation for the cycling effects in flash memory
DE102007046401B4 (de) 2006-09-22 2023-08-24 Samsung Electronics Co., Ltd. Nichtflüchtiges Halbleiterspeichersystem und zugehöriges Verfahren zum Durchführen einer Programmieroperation
US7977186B2 (en) * 2006-09-28 2011-07-12 Sandisk Corporation Providing local boosting control implant for non-volatile memory
US7705387B2 (en) * 2006-09-28 2010-04-27 Sandisk Corporation Non-volatile memory with local boosting control implant
US7701770B2 (en) * 2006-09-29 2010-04-20 Hynix Semiconductor Inc. Flash memory device and program method thereof
US7450426B2 (en) * 2006-10-10 2008-11-11 Sandisk Corporation Systems utilizing variable program voltage increment values in non-volatile memory program operations
US7474561B2 (en) * 2006-10-10 2009-01-06 Sandisk Corporation Variable program voltage increment values in non-volatile memory program operations
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US7586157B2 (en) * 2006-10-17 2009-09-08 Sandisk Corporation Non-volatile memory with dual voltage select gate structure
US7691710B2 (en) * 2006-10-17 2010-04-06 Sandisk Corporation Fabricating non-volatile memory with dual voltage select gate structure
KR100830580B1 (ko) * 2006-10-20 2008-05-21 삼성전자주식회사 플래시 메모리 장치를 포함한 메모리 시스템의 데이터 복원방법
CN101601094B (zh) 2006-10-30 2013-03-27 苹果公司 使用多个门限读取存储单元的方法
US7596031B2 (en) 2006-10-30 2009-09-29 Sandisk Corporation Faster programming of highest multi-level state for non-volatile memory
US7975192B2 (en) 2006-10-30 2011-07-05 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7468911B2 (en) * 2006-11-02 2008-12-23 Sandisk Corporation Non-volatile memory using multiple boosting modes for reduced program disturb
US7440323B2 (en) * 2006-11-02 2008-10-21 Sandisk Corporation Reducing program disturb in non-volatile memory using multiple boosting modes
US7696035B2 (en) * 2006-11-13 2010-04-13 Sandisk Corporation Method for fabricating non-volatile memory with boost structures
US7508703B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Non-volatile memory with boost structures
US7508710B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Operating non-volatile memory with boost structures
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) * 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US8019940B2 (en) 2006-12-06 2011-09-13 Fusion-Io, Inc. Apparatus, system, and method for a front-end, distributed raid
US7623387B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Non-volatile storage with early source-side boosting for reducing program disturb
US7623386B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Reducing program disturb in non-volatile storage using early source-side boosting
KR100801035B1 (ko) * 2006-12-14 2008-02-04 삼성전자주식회사 멀티 레벨 셀의 프로그램 방법, 페이지 버퍼 블록 및 이를포함하는 불휘발성 메모리 장치
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7570520B2 (en) * 2006-12-27 2009-08-04 Sandisk Corporation Non-volatile storage system with initial programming voltage based on trial
US7551482B2 (en) * 2006-12-27 2009-06-23 Sandisk Corporation Method for programming with initial programming voltage based on trial
US7701765B2 (en) * 2006-12-28 2010-04-20 Micron Technology, Inc. Non-volatile multilevel memory cell programming
US7468919B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Biasing non-volatile storage based on selected word line
US7554853B2 (en) * 2006-12-30 2009-06-30 Sandisk Corporation Non-volatile storage with bias based on selective word line
US7468920B2 (en) 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7525843B2 (en) * 2006-12-30 2009-04-28 Sandisk Corporation Non-volatile storage with adaptive body bias
US7583535B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Biasing non-volatile storage to compensate for temperature variations
US7583539B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Non-volatile storage with bias for temperature compensation
US8151166B2 (en) * 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) * 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US7660166B2 (en) * 2007-01-31 2010-02-09 Sandisk Il Ltd. Method of improving programming precision in flash memory
US7738295B2 (en) * 2007-01-31 2010-06-15 Micron Technology, Inc. Programming a non-volatile memory device
KR100819102B1 (ko) * 2007-02-06 2008-04-03 삼성전자주식회사 개선된 멀티 페이지 프로그램 동작을 갖는 불휘발성 반도체메모리 장치
US20080189473A1 (en) * 2007-02-07 2008-08-07 Micron Technology, Inc Mlc selected multi-program for system management
KR100866957B1 (ko) * 2007-02-08 2008-11-05 삼성전자주식회사 데이터 프로그램 시간을 단축시킨 불휘발성 메모리 장치 및그 구동방법
US20080205140A1 (en) * 2007-02-26 2008-08-28 Aplus Flash Technology, Inc. Bit line structure for a multilevel, dual-sided nonvolatile memory cell array
DE102007011638A1 (de) * 2007-03-09 2008-09-11 Giesecke & Devrient Gmbh Verfahren zum Einschreiben von Daten in einen Speicher eines tragbaren Datenträgers
US8369141B2 (en) * 2007-03-12 2013-02-05 Apple Inc. Adaptive estimation of memory cell read thresholds
US7904793B2 (en) * 2007-03-29 2011-03-08 Sandisk Corporation Method for decoding data in non-volatile storage using reliability metrics based on multiple reads
US7797480B2 (en) * 2007-03-29 2010-09-14 Sandisk Corporation Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics
US7532516B2 (en) * 2007-04-05 2009-05-12 Sandisk Corporation Non-volatile storage with current sensing of negative threshold voltages
US7606076B2 (en) * 2007-04-05 2009-10-20 Sandisk Corporation Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US7606071B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Compensating source voltage drop in non-volatile storage
US7606072B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop
US7440327B1 (en) 2007-04-25 2008-10-21 Sandisk Corporation Non-volatile storage with reduced power consumption during read operations
US7606079B2 (en) * 2007-04-25 2009-10-20 Sandisk Corporation Reducing power consumption during read operations in non-volatile storage
US7460404B1 (en) * 2007-05-07 2008-12-02 Sandisk Corporation Boosting for non-volatile storage using channel isolation switching
US7463522B2 (en) * 2007-05-07 2008-12-09 Sandisk Corporation Non-volatile storage with boosting using channel isolation switching
US7577026B2 (en) * 2007-05-07 2009-08-18 Sandisk Corporation Source and drain side early boosting using local self boosting for non-volatile storage
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
US7619931B2 (en) * 2007-06-26 2009-11-17 Micron Technology, Inc. Program-verify method with different read and verify pass-through voltages
US7471567B1 (en) 2007-06-29 2008-12-30 Sandisk Corporation Method for source bias all bit line sensing in non-volatile storage
CN101796590B (zh) * 2007-06-29 2013-01-30 桑迪士克科技股份有限公司 具有源极偏压全位线感测的非易失性存储器
US7545678B2 (en) * 2007-06-29 2009-06-09 Sandisk Corporation Non-volatile storage with source bias all bit line sensing
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8044705B2 (en) 2007-08-28 2011-10-25 Sandisk Technologies Inc. Bottom plate regulation of charge pumps
US7876638B2 (en) 2007-09-11 2011-01-25 Micron Technology, Inc. Storing operational information in an array of memory cells
US7652929B2 (en) * 2007-09-17 2010-01-26 Sandisk Corporation Non-volatile memory and method for biasing adjacent word line for verify during programming
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7577034B2 (en) * 2007-09-26 2009-08-18 Sandisk Corporation Reducing programming voltage differential nonlinearity in non-volatile storage
US7978520B2 (en) 2007-09-27 2011-07-12 Sandisk Corporation Compensation of non-volatile memory chip non-idealities by program pulse adjustment
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
WO2009050703A2 (en) * 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
WO2009063450A2 (en) * 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US7688638B2 (en) * 2007-12-07 2010-03-30 Sandisk Corporation Faster programming of multi-level non-volatile storage through reduced verify operations
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US7586362B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Low voltage charge pump with regulation
US7586363B2 (en) 2007-12-12 2009-09-08 Sandisk Corporation Diode connected regulation of charge pumps
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
JP2009193620A (ja) * 2008-02-13 2009-08-27 Toshiba Corp 不揮発性半導体記憶装置
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US7986554B2 (en) * 2008-03-19 2011-07-26 Sandisk Technologies Inc. Different combinations of wordline order and look-ahead read to improve non-volatile memory performance
US7915664B2 (en) * 2008-04-17 2011-03-29 Sandisk Corporation Non-volatile memory with sidewall channels and raised source/drain regions
US8051240B2 (en) * 2008-05-09 2011-11-01 Sandisk Technologies Inc. Compensating non-volatile storage using different pass voltages during program-verify and read
US7957197B2 (en) * 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
US20090302930A1 (en) * 2008-06-09 2009-12-10 Feng Pan Charge Pump with Vt Cancellation Through Parallel Structure
US7969235B2 (en) 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US7855913B2 (en) * 2008-06-10 2010-12-21 Micron Technology, Inc. Dynamically configurable MLC state assignment
US8710907B2 (en) 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US7683700B2 (en) 2008-06-25 2010-03-23 Sandisk Corporation Techniques of ripple reduction for charge pumps
US7800956B2 (en) * 2008-06-27 2010-09-21 Sandisk Corporation Programming algorithm to reduce disturb with minimal extra time penalty
US8762654B1 (en) 2008-07-02 2014-06-24 Marvell International Ltd. Selectively scheduling memory accesses in parallel based on access speeds of memory
US8706951B2 (en) * 2008-07-18 2014-04-22 Marvell World Trade Ltd. Selectively accessing faster or slower multi-level cell memory
US8498151B1 (en) 2008-08-05 2013-07-30 Apple Inc. Data storage in analog memory cells using modified pass voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US7876611B2 (en) * 2008-08-08 2011-01-25 Sandisk Corporation Compensating for coupling during read operations in non-volatile storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US9773557B2 (en) * 2008-09-03 2017-09-26 Marvell World Trade Ltd. Multi-plane data order
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US7755946B2 (en) * 2008-09-19 2010-07-13 Sandisk Corporation Data state-based temperature compensation during sensing in non-volatile memory
JP2010092559A (ja) * 2008-10-10 2010-04-22 Toshiba Corp Ｎａｎｄ型フラッシュメモリ
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8127091B2 (en) * 2008-10-30 2012-02-28 Micron Technology, Inc. Programming memory cells with additional data for increased threshold voltage resolution
US8713330B1 (en) 2008-10-30 2014-04-29 Apple Inc. Data scrambling in memory devices
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8332577B2 (en) * 2008-12-10 2012-12-11 Sandisk Technologies Inc. Program control of a non-volatile memory
US7795952B2 (en) * 2008-12-17 2010-09-14 Sandisk Corporation Regulation of recovery rates in charge pumps
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8174857B1 (en) 2008-12-31 2012-05-08 Anobit Technologies Ltd. Efficient readout schemes for analog memory cell devices using multiple read threshold sets
US8255615B1 (en) 2009-01-08 2012-08-28 Marvell International Ltd. Flexible sequence design architecture for solid state memory controller
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
KR101074539B1 (ko) * 2009-02-04 2011-10-17 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 그 동작 방법
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8832353B2 (en) * 2009-04-07 2014-09-09 Sandisk Technologies Inc. Host stop-transmission handling
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8102705B2 (en) * 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8132045B2 (en) * 2009-06-16 2012-03-06 SanDisk Technologies, Inc. Program failure handling in nonvolatile memory
US8307241B2 (en) * 2009-06-16 2012-11-06 Sandisk Technologies Inc. Data recovery in multi-level cell nonvolatile memory
US8054691B2 (en) 2009-06-26 2011-11-08 Sandisk Technologies Inc. Detecting the completion of programming for non-volatile storage
KR101010468B1 (ko) * 2009-06-29 2011-01-21 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
US8874825B2 (en) * 2009-06-30 2014-10-28 Sandisk Technologies Inc. Storage device and method using parameters based on physical memory block location
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8180994B2 (en) * 2009-07-08 2012-05-15 Sandisk Technologies Inc. Optimized page programming order for non-volatile memory
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US7973592B2 (en) 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US7995394B2 (en) * 2009-07-30 2011-08-09 Sandisk Technologies Inc. Program voltage compensation with word line bias change to suppress charge trapping in memory
US8130543B2 (en) * 2009-08-13 2012-03-06 Macronix International Co., Ltd. Method and apparatus for increasing memory programming efficiency through dynamic switching of sense amplifiers
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US20110133820A1 (en) * 2009-12-09 2011-06-09 Feng Pan Multi-Stage Charge Pump with Variable Number of Boosting Stages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US20110148509A1 (en) * 2009-12-17 2011-06-23 Feng Pan Techniques to Reduce Charge Pump Overshoot
US8144512B2 (en) * 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US20110158001A1 (en) * 2009-12-31 2011-06-30 Hynix Semiconductor Inc. Programming method for nonvolatile memory device
US8402203B2 (en) * 2009-12-31 2013-03-19 Seagate Technology Llc Systems and methods for storing data in a multi-level cell solid state storage device
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8677203B1 (en) 2010-01-11 2014-03-18 Apple Inc. Redundant data storage schemes for multi-die memory systems
US8248850B2 (en) * 2010-01-28 2012-08-21 Sandisk Technologies Inc. Data recovery for non-volatile memory based on count of data state-specific fails
US8213255B2 (en) 2010-02-19 2012-07-03 Sandisk Technologies Inc. Non-volatile storage with temperature compensation based on neighbor state information
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8274831B2 (en) 2010-05-24 2012-09-25 Sandisk Technologies Inc. Programming non-volatile storage with synchronized coupling
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
KR101153813B1 (ko) 2010-09-30 2012-06-13 에스케이하이닉스 주식회사 반도체 메모리 장치
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8843693B2 (en) 2011-05-17 2014-09-23 SanDisk Technologies, Inc. Non-volatile memory and method with improved data scrambling
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US9477590B2 (en) * 2011-09-16 2016-10-25 Apple Inc. Weave sequence counter for non-volatile memory systems
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
WO2013058960A2 (en) 2011-10-20 2013-04-25 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8630120B2 (en) 2011-10-20 2014-01-14 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8842476B2 (en) 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
US8634239B2 (en) 2011-12-28 2014-01-21 Sandisk Technologies Inc. Hybrid multi-level cell programming sequences
US8730722B2 (en) 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
WO2013134735A1 (en) 2012-03-08 2013-09-12 California Institute Of Technology Rank-modulation rewriting codes for flash memories
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
TWI486766B (zh) 2012-05-11 2015-06-01 Phison Electronics Corp 資料處理方法、記憶體控制器與記憶體儲存裝置
CN103425594B (zh) * 2012-05-23 2016-09-14 群联电子股份有限公司 数据处理方法、存储器控制器与存储器存储装置
US20140003176A1 (en) 2012-06-28 2014-01-02 Man Lung Mui Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption
US9293195B2 (en) 2012-06-28 2016-03-22 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory
US8971141B2 (en) 2012-06-28 2015-03-03 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory and hybrid lockout
US8824203B2 (en) * 2012-07-13 2014-09-02 Micron Technology, Inc. Multiple step programming in a memory device
KR102012740B1 (ko) 2012-07-18 2019-08-21 삼성전자주식회사 복수의 불휘발성 메모리 칩들을 포함하는 저장 장치 및 그것의 제어 방법
KR20140028582A (ko) * 2012-08-29 2014-03-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
US9135989B2 (en) * 2012-09-06 2015-09-15 Sandisk Technologies Inc. Write data preservation for non-volatile storage
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US9164526B2 (en) 2012-09-27 2015-10-20 Sandisk Technologies Inc. Sigma delta over-sampling charge pump analog-to-digital converter
US9810723B2 (en) 2012-09-27 2017-11-07 Sandisk Technologies Llc Charge pump based over-sampling ADC for current detection
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
KR20140076128A (ko) * 2012-12-12 2014-06-20 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 동작 방법과, 이를 포함하는 데이터 처리 시스템
US9236136B2 (en) * 2012-12-14 2016-01-12 Intel Corporation Lower page read for multi-level cell memory
US8913428B2 (en) 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
US9026757B2 (en) * 2013-01-25 2015-05-05 Sandisk Technologies Inc. Non-volatile memory programming data preservation
US8971128B2 (en) 2013-01-31 2015-03-03 Sandisk Technologies Inc. Adaptive initial program voltage for non-volatile memory
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US9384839B2 (en) 2013-03-07 2016-07-05 Sandisk Technologies Llc Write sequence providing write abort protection
US9053810B2 (en) 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US9047211B2 (en) 2013-03-15 2015-06-02 SanDisk Technologies, Inc. Managing data reliability
US9037902B2 (en) 2013-03-15 2015-05-19 Sandisk Technologies Inc. Flash memory techniques for recovering from write interrupt resulting from voltage fault
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US20150006784A1 (en) 2013-06-27 2015-01-01 Sandisk Technologies Inc. Efficient Post Write Read in Three Dimensional Nonvolatile Memory
US9218242B2 (en) 2013-07-02 2015-12-22 Sandisk Technologies Inc. Write operations for defect management in nonvolatile memory
US9063671B2 (en) 2013-07-02 2015-06-23 Sandisk Technologies Inc. Write operations with full sequence programming for defect management in nonvolatile memory
WO2015004712A1 (ja) 2013-07-08 2015-01-15 株式会社 東芝 ロックアウトモードとノーロックアウトモードを有する半導体記憶装置
KR101449933B1 (ko) * 2013-09-02 2014-10-15 (주)피델릭스 노이즈 피크를 줄이면서 프로그램 소요시간을 저감하는 플래시 메모리 장치 및 그의 프로그램 방법
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9424179B2 (en) * 2013-10-17 2016-08-23 Seagate Technology Llc Systems and methods for latency based data recycling in a solid state memory system
US9043537B1 (en) 2013-11-21 2015-05-26 Sandisk Technologies Inc. Update block programming order
US9058881B1 (en) 2013-12-05 2015-06-16 Sandisk Technologies Inc. Systems and methods for partial page programming of multi level cells
US9244631B2 (en) 2013-12-06 2016-01-26 Sandisk Technologies Inc. Lower page only host burst writes
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
JP6226809B2 (ja) * 2014-05-01 2017-11-08 東芝メモリ株式会社 半導体記憶装置
US9384830B2 (en) 2014-05-06 2016-07-05 Micron Technology, Inc. Apparatuses and methods for performing multiple memory operations
US8902652B1 (en) 2014-05-13 2014-12-02 Sandisk Technologies Inc. Systems and methods for lower page writes
US8886877B1 (en) 2014-05-15 2014-11-11 Sandisk Technologies Inc. In-situ block folding for nonvolatile memory
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
US9696918B2 (en) 2014-07-13 2017-07-04 Apple Inc. Protection and recovery from sudden power failure in non-volatile memory devices
US9208895B1 (en) 2014-08-14 2015-12-08 Sandisk Technologies Inc. Cell current control through power supply
US9349468B2 (en) 2014-08-25 2016-05-24 SanDisk Technologies, Inc. Operational amplifier methods for charging of sense amplifier internal nodes
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9772935B2 (en) * 2014-09-16 2017-09-26 Empire Technology Development Llc Data storage based on rank modulation in single-level flash memory
US9678832B2 (en) * 2014-09-18 2017-06-13 Sandisk Technologies Llc Storage module and method for on-chip copy gather
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
KR102438552B1 (ko) * 2015-02-04 2022-09-01 에스케이하이닉스 주식회사 메모리 시스템 및 그 동작방법
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9224492B1 (en) * 2015-02-17 2015-12-29 Phison Electronics Corp. Memory management method, memory storage device and memory controlling circuit unit
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
KR20160127524A (ko) * 2015-04-27 2016-11-04 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US10164770B1 (en) * 2015-06-03 2018-12-25 Marvell International Ltd. Pipelined data cryptography device and method
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9659666B2 (en) 2015-08-31 2017-05-23 Sandisk Technologies Llc Dynamic memory recovery at the sub-block level
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
US9858009B2 (en) 2015-10-26 2018-01-02 Sandisk Technologies Llc Data folding in 3D nonvolatile memory
US20170123721A1 (en) * 2015-10-28 2017-05-04 Sandisk Technologies Inc. System and method for utilization of a data buffer by command completion in parts
US9880783B2 (en) 2015-10-28 2018-01-30 Sandisk Technologies Llc System and method for utilization of a shadow data buffer in a host where the shadow data buffer is controlled by external storage controller
KR102470606B1 (ko) * 2015-11-26 2022-11-28 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치를 포함하는 스토리지 장치
TWI588833B (zh) * 2015-11-27 2017-06-21 群聯電子股份有限公司 資料程式化方法與記憶體儲存裝置
US10198315B2 (en) 2016-02-29 2019-02-05 Sandisk Technologies Llc Non-volatile memory with corruption recovery
US9698676B1 (en) 2016-03-11 2017-07-04 Sandisk Technologies Llc Charge pump based over-sampling with uniform step size for current detection
US9792995B1 (en) 2016-04-26 2017-10-17 Sandisk Technologies Llc Independent multi-plane read and low latency hybrid read
JP6652470B2 (ja) * 2016-09-07 2020-02-26 キオクシア株式会社 半導体記憶装置
JP2018045741A (ja) * 2016-09-12 2018-03-22 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
US10134479B2 (en) * 2017-04-21 2018-11-20 Sandisk Technologies Llc Non-volatile memory with reduced program speed variation
US10096380B1 (en) * 2017-08-31 2018-10-09 Micron Technology, Inc. Erase page check
US10304550B1 (en) 2017-11-29 2019-05-28 Sandisk Technologies Llc Sense amplifier with negative threshold sensing for non-volatile memory
US10600484B2 (en) * 2017-12-20 2020-03-24 Silicon Storage Technology, Inc. System and method for minimizing floating gate to floating gate coupling effects during programming in flash memory
KR20200023758A (ko) * 2018-08-27 2020-03-06 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작방법
KR20200034312A (ko) * 2018-09-21 2020-03-31 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR102528274B1 (ko) 2018-11-06 2023-05-02 삼성전자주식회사 비휘발성 메모리 장치 및 그 구동 방법
US10643695B1 (en) 2019-01-10 2020-05-05 Sandisk Technologies Llc Concurrent multi-state program verify for non-volatile memory
US10748622B2 (en) 2019-01-21 2020-08-18 Sandisk Technologies Llc State adaptive predictive programming
KR20210000212A (ko) * 2019-06-24 2021-01-04 에스케이하이닉스 주식회사 메모리 컨트롤러 및 이를 포함하는 메모리 시스템
US11309032B2 (en) 2019-11-26 2022-04-19 Samsung Electronics Co., Ltd. Operating method of memory system including memory controller and nonvolatile memory device
US11024392B1 (en) 2019-12-23 2021-06-01 Sandisk Technologies Llc Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11694755B2 (en) 2021-06-02 2023-07-04 Sandisk Technologies Llc Nonvolatile memory with data recovery
CN113409850A (zh) * 2021-06-17 2021-09-17 芯天下技术股份有限公司 一种提高编程效率的方法、装置、存储介质和终端
US11657883B2 (en) * 2021-07-22 2023-05-23 Western Digital Technologies, Inc. Isolating problematic memory planes to avoid neighbor plan disturb
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
US11763905B2 (en) 2021-12-16 2023-09-19 Western Digital Technologies, Inc. Storage system and method for data protection during power loss

Family Cites Families (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1089225B (it) 1977-12-23 1985-06-18 Honeywell Inf Systems Memoria con dispositivo rivelatore e correttore a intervento selettivo
IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
US4785427A (en) * 1987-01-28 1988-11-15 Cypress Semiconductor Corporation Differential bit line clamp
US5034922A (en) * 1987-12-21 1991-07-23 Motorola, Inc. Intelligent electrically erasable, programmable read-only memory with improved read latency
US5093806A (en) * 1988-02-16 1992-03-03 Tran Hiep V Sensing and decoding scheme for a bicmos read/write memory
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5070032A (en) * 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
EP0617363B1 (de) * 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
JP2646850B2 (ja) * 1990-11-30 1997-08-27 日本電気株式会社 半導体メモリ回路
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5274646A (en) 1991-04-17 1993-12-28 International Business Machines Corporation Excessive error correction control
KR960000619B1 (ko) * 1991-12-27 1996-01-10 후지쓰 가부시끼가이샤 일괄소거형의 불휘발성 반도체 기억장치 및 그의 구동제어회로
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
JP3323869B2 (ja) 1992-03-31 2002-09-09 株式会社東芝 不揮発性半導体メモリ装置
US5315541A (en) * 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
US5586285A (en) 1993-02-19 1996-12-17 Intel Corporation Method and circuitry for increasing reserve memory in a solid state memory disk
JP3078946B2 (ja) 1993-03-11 2000-08-21 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 一括消去型不揮発性メモリの管理方法及び半導体ディスク装置
KR970008188B1 (ko) 1993-04-08 1997-05-21 가부시끼가이샤 히다찌세이사꾸쇼 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치
US5555204A (en) * 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5519847A (en) * 1993-06-30 1996-05-21 Intel Corporation Method of pipelining sequential writes in a flash memory
JP2922116B2 (ja) 1993-09-02 1999-07-19 株式会社東芝 半導体記憶装置
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5661053A (en) * 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5680347A (en) * 1994-06-29 1997-10-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US5838614A (en) 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
JP3941149B2 (ja) * 1996-12-03 2007-07-04 ソニー株式会社 半導体不揮発性記憶装置
US5875477A (en) 1995-12-22 1999-02-23 Intel Corporation Method and apparatus for error management in a solid state disk drive using primary and secondary logical sector numbers
US5893135A (en) 1995-12-27 1999-04-06 Intel Corporation Flash memory array with two interfaces for responding to RAS and CAS signals
US5724303A (en) 1996-02-15 1998-03-03 Nexcom Technology, Inc. Non-volatile programmable memory having an SRAM capability
AU3832297A (en) 1996-02-29 1997-09-16 Hitachi Limited Semiconductor memory device having faulty cells
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5860082A (en) * 1996-03-28 1999-01-12 Datalight, Inc. Method and apparatus for allocating storage in a flash memory
FR2749682B1 (fr) 1996-06-10 1998-07-10 Bull Sa Circuit pour transborder des donnees entre memoires distantes et calculateur comprenant un tel circuit
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US5890192A (en) 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
US5901086A (en) * 1996-12-26 1999-05-04 Motorola, Inc. Pipelined fast-access floating gate memory architecture and method of operation
JP3897388B2 (ja) * 1996-12-27 2007-03-22 シャープ株式会社 シリアルアクセス方式の半導体記憶装置
US6097638A (en) * 1997-02-12 2000-08-01 Kabushiki Kaisha Toshiba Semiconductor memory device
KR100272037B1 (ko) * 1997-02-27 2000-12-01 니시무로 타이죠 불휘발성 반도체 기억 장치
US5870335A (en) * 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
US5822245A (en) 1997-03-26 1998-10-13 Atmel Corporation Dual buffer flash memory architecture with multiple operating modes
US5872739A (en) * 1997-04-17 1999-02-16 Radiant Technologies Sense amplifier for low read-voltage memory cells
JPH113290A (ja) 1997-06-11 1999-01-06 Hitachi Ltd メモリ制御方式
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6021463A (en) 1997-09-02 2000-02-01 International Business Machines Corporation Method and means for efficiently managing update writes and fault tolerance in redundancy groups of addressable ECC-coded sectors in a DASD storage subsystem
JPH11203191A (ja) 1997-11-13 1999-07-30 Seiko Epson Corp 不揮発性記憶装置、不揮発性記憶装置の制御方法、および、不揮発性記憶装置を制御するプログラムを記録した情報記録媒体
US6333871B1 (en) 1998-02-16 2001-12-25 Hitachi, Ltd. Nonvolatile semiconductor memory including a controller for providing an improved reprogram operation
US5969986A (en) 1998-06-23 1999-10-19 Invox Technology High-bandwidth read and write architectures for non-volatile memories
US6040997A (en) 1998-03-25 2000-03-21 Lexar Media, Inc. Flash memory leveling architecture having no external latch
US5949720A (en) * 1998-10-30 1999-09-07 Stmicroelectronics, Inc. Voltage clamping method and apparatus for dynamic random access memory devices
US6490649B2 (en) 1998-11-10 2002-12-03 Lexar Media, Inc. Memory device
AU1729100A (en) 1998-11-17 2000-06-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6567302B2 (en) 1998-12-29 2003-05-20 Micron Technology, Inc. Method and apparatus for programming multi-state cells in a memory device
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
GB9903490D0 (en) 1999-02-17 1999-04-07 Memory Corp Plc Memory system
US6449625B1 (en) 1999-04-20 2002-09-10 Lucent Technologies Inc. Use of a two-way stack approach to optimize flash memory management for embedded database systems
US6920569B1 (en) 1999-04-29 2005-07-19 Koninklijke Philips Electronics N.V. Device configured as stand-alone or slave based on detection of power supply in a powered data bus system
WO2001008015A1 (fr) 1999-07-28 2001-02-01 Sony Corporation Systeme d'enregistrement, dispositif d'enregistrement de donnees, dispositif a memoire et procede d'enregistrement de donnees
JP3863330B2 (ja) * 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
US6278633B1 (en) 1999-11-05 2001-08-21 Multi Level Memory Technology High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations
JP2001184881A (ja) * 1999-12-28 2001-07-06 Toshiba Corp 不揮発性半導体メモリの読み出し回路
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
JP3983969B2 (ja) * 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
US6396744B1 (en) 2000-04-25 2002-05-28 Multi Level Memory Technology Flash memory with dynamic refresh
US6396741B1 (en) * 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6504757B1 (en) * 2000-08-11 2003-01-07 Advanced Micro Devices, Inc. Double boosting scheme for NAND to improve program inhibit characteristics
US6266273B1 (en) 2000-08-21 2001-07-24 Sandisk Corporation Method and structure for reliable data copy operation for non-volatile memories
US6581142B1 (en) 2000-09-01 2003-06-17 International Business Machines Corporation Computer program product and method for partial paging and eviction of microprocessor instructions in an embedded computer
JP2002100192A (ja) * 2000-09-22 2002-04-05 Toshiba Corp 不揮発性半導体メモリ
US6684289B1 (en) 2000-11-22 2004-01-27 Sandisk Corporation Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
US6349056B1 (en) 2000-12-28 2002-02-19 Sandisk Corporation Method and structure for efficient data verification operation for non-volatile memories
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US6407953B1 (en) * 2001-02-02 2002-06-18 Matrix Semiconductor, Inc. Memory array organization and related test method particularly well suited for integrated circuits having write-once memory arrays
KR100381956B1 (ko) * 2001-02-02 2003-04-26 삼성전자주식회사 플래시 메모리 장치의 감지 증폭 회로
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
JP3957985B2 (ja) * 2001-03-06 2007-08-15 株式会社東芝 不揮発性半導体記憶装置
US6570810B2 (en) * 2001-04-20 2003-05-27 Multi Level Memory Technology Contactless flash memory with buried diffusion bit/virtual ground lines
JP2003036681A (ja) 2001-07-23 2003-02-07 Hitachi Ltd 不揮発性記憶装置
US6671204B2 (en) 2001-07-23 2003-12-30 Samsung Electronics Co., Ltd. Nonvolatile memory device with page buffer having dual registers and methods of using the same
JP3979486B2 (ja) * 2001-09-12 2007-09-19 株式会社ルネサステクノロジ 不揮発性記憶装置およびデータ格納方法
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US7177197B2 (en) * 2001-09-17 2007-02-13 Sandisk Corporation Latched programming of memory and method
JP4454896B2 (ja) * 2001-09-27 2010-04-21 シャープ株式会社 仮想接地型不揮発性半導体記憶装置
GB0123412D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system sectors
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
KR100454119B1 (ko) * 2001-10-24 2004-10-26 삼성전자주식회사 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들
US6977847B2 (en) 2001-11-23 2005-12-20 M-Systems Flash Disk Pioneers Ltd. Detecting partially erased units in flash devices
JP3874653B2 (ja) * 2001-11-29 2007-01-31 富士通株式会社 圧縮テスト機能を有するメモリ回路
US6687158B2 (en) * 2001-12-21 2004-02-03 Fujitsu Limited Gapless programming for a NAND type flash memory
US6700820B2 (en) 2002-01-03 2004-03-02 Intel Corporation Programming non-volatile memory devices
US6542407B1 (en) 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
US20030163692A1 (en) * 2002-01-31 2003-08-28 Brocade Communications Systems, Inc. Network security and applications to the fabric
JP4004811B2 (ja) * 2002-02-06 2007-11-07 株式会社東芝 不揮発性半導体記憶装置
US6836432B1 (en) 2002-02-11 2004-12-28 Advanced Micro Devices, Inc. Partial page programming of multi level flash
US6871257B2 (en) 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
US6771536B2 (en) * 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory
JP2004030784A (ja) 2002-06-26 2004-01-29 Fujitsu Ltd 半導体記憶装置
JP4225749B2 (ja) 2002-08-07 2009-02-18 株式会社ルネサステクノロジ 半導体記憶装置
US6983428B2 (en) * 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US7443757B2 (en) * 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US6940753B2 (en) * 2002-09-24 2005-09-06 Sandisk Corporation Highly compact non-volatile memory and method therefor with space-efficient data registers
US6657891B1 (en) * 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
US7073103B2 (en) * 2002-12-05 2006-07-04 Sandisk Corporation Smart verify for multi-state memories
US7392436B2 (en) 2003-05-08 2008-06-24 Micron Technology, Inc. Program failure recovery
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7490283B2 (en) * 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US7420847B2 (en) 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7158421B2 (en) 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7849381B2 (en) 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7409473B2 (en) * 2004-12-21 2008-08-05 Sandisk Corporation Off-chip data relocation
US20060140007A1 (en) * 2004-12-29 2006-06-29 Raul-Adrian Cernea Non-volatile memory and method with shared processing for an aggregate of read/write circuits

Also Published As

Publication number Publication date
ATE475185T1 (de) 2010-08-15
US20060126390A1 (en) 2006-06-15
KR101193584B1 (ko) 2012-10-23
TWI413125B (zh) 2013-10-21
US7345928B2 (en) 2008-03-18
WO2006065518A1 (en) 2006-06-22
CN101107673A (zh) 2008-01-16
US7301805B2 (en) 2007-11-27
TW200632921A (en) 2006-09-16
CN100543878C (zh) 2009-09-23
KR20070101250A (ko) 2007-10-16
EP1829045B1 (de) 2010-07-21
JP4372196B2 (ja) 2009-11-25
US20060126393A1 (en) 2006-06-15
IL183833A0 (en) 2007-10-31
JP2008523542A (ja) 2008-07-03
US20070014153A1 (en) 2007-01-18
EP1829045A1 (de) 2007-09-05
US7120051B2 (en) 2006-10-10

Similar Documents

Publication Publication Date Title
DE602005022487D1 (de) Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten
JP4925301B2 (ja) 半導体メモリシステム
CN101903953B (zh) 具有功率节省特性的非易失性半导体存储器设备
TW200733112A (en) Corrected data storage and handling methods
TWI417717B (zh) 具多流更新之非揮發性記憶體及方法
ATE434788T1 (de) Flash-speicherdatenkorrektur und - säuberungsverfahren
JP4377951B2 (ja) 記憶装置、システム、該システムを搭載した遊技機
JP5990430B2 (ja) Ｓｓｄ（ソリッドステートドライブ）装置
US9043564B2 (en) Memory system with fixed and variable pointers
US8090918B2 (en) Electronic storage device with improved storage method
US8055834B2 (en) Method for preventing read-disturb happened in non-volatile memory and controller thereof
TW201527970A (zh) 資料儲存裝置以及快閃記憶體控制方法
ATE534995T1 (de) Mehrebenen-zellenzugangspuffer mit zweifacher funktion
TW200951979A (en) Data writing method for flash memory and storage system and controller using the same
TWI460586B (zh) 資料儲存裝置與快閃記憶體操作方法
JP2016501413A5 (de)
US20140219021A1 (en) Data protection for unexpected power loss
CN107544748B (zh) 固态储存装置及其数据写入方法
TWI435329B (zh) 快閃記憶體管理方法、快閃記憶體控制器與儲存系統
TWI626541B (zh) 將資料寫入至快閃記憶體模組的方法及相關的快閃記憶體控制器與電子裝置
JPWO2009004674A1 (ja) 記憶装置、ディスク装置、書込み判定方法、制御装置
TW200707443A (en) Multi-state memory having data recovery after program fail
JP2007094921A (ja) メモリカードとその制御方法
US20120166716A1 (en) Methods, storage devices, and systems for promoting the endurance of non-volatile solid-state memory components
US11487655B2 (en) Method for managing flash memory module and associated flash memory controller and electronic device based on timing of dummy read operations

Legal Events

Date Code Title Description
R082 Change of representative

Ref document number: 1829045

Country of ref document: EP

Representative=s name: MARKS & CLERK (LUXEMBOURG) LLP, LU