DE602005026581D1 - Ikroelektromechanischen systemen - Google Patents

Ikroelektromechanischen systemen

Info

Publication number: DE602005026581D1
Authority: DE; Germany
Prior art keywords: process chamber; substrates; processing; shell; fluid flow
Prior art date: 2004-11-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

DE602005026581T

Other languages

English (en)

Inventor

Robert W Grant

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Primaxx Inc

Original Assignee

Primaxx Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-11-18

Filing date

2005-11-18

Publication date

2011-04-07

2005-11-18 Application filed by Primaxx Inc filed Critical Primaxx Inc

2011-04-07 Publication of DE602005026581D1 publication Critical patent/DE602005026581D1/de

Status Active legal-status Critical Current

2025-11-19 Anticipated expiration legal-status Critical

Links

238000000034 method Methods 0.000 abstract 8
239000000758 substrate Substances 0.000 abstract 7
239000012530 fluid Substances 0.000 abstract 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
229910052799 carbon Inorganic materials 0.000 abstract 1
239000004020 conductor Substances 0.000 abstract 1
238000005111 flow chemistry technique Methods 0.000 abstract 1
239000011148 porous material Substances 0.000 abstract 1
229910001220 stainless steel Inorganic materials 0.000 abstract 1
239000010935 stainless steel Substances 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
- H01L21/67323—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

DE602005026581T 2004-11-18 2005-11-18 Ikroelektromechanischen systemen Active DE602005026581D1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US10/991,554 US7771563B2 (en)	2004-11-18	2004-11-18	Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems
PCT/US2005/042232 WO2006055937A2 (en)	2004-11-18	2005-11-18	Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical systems

Publications (1)

Publication Number	Publication Date
DE602005026581D1 true DE602005026581D1 (de)	2011-04-07

Family

ID=36384952

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE602005026581T Active DE602005026581D1 (de)	2004-11-18	2005-11-18	Ikroelektromechanischen systemen

Country Status (7)

Country	Link
US (1)	US7771563B2 (de)
EP (1)	EP1859077B1 (de)
JP (1)	JP4912316B2 (de)
KR (1)	KR101154272B1 (de)
AT (1)	ATE499702T1 (de)
DE (1)	DE602005026581D1 (de)
WO (1)	WO2006055937A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8639365B2 (en) *	2003-11-10	2014-01-28	Brooks Automation, Inc.	Methods and systems for controlling a semiconductor fabrication process
US20070282480A1 (en)	2003-11-10	2007-12-06	Pannese Patrick D	Methods and systems for controlling a semiconductor fabrication process
US8639489B2 (en)	2003-11-10	2014-01-28	Brooks Automation, Inc.	Methods and systems for controlling a semiconductor fabrication process
JP4698354B2 (ja) *	2005-09-15	2011-06-08	株式会社リコー	Ｃｖｄ装置
KR101874901B1 (ko) *	2011-12-07	2018-07-06	삼성전자주식회사	기판 건조 장치 및 방법
US20150155188A1 (en) *	2013-11-29	2015-06-04	Semes Co., Ltd.	Substrate treating apparatus and method
US10347516B2 (en) *	2014-11-11	2019-07-09	Applied Materials, Inc.	Substrate transfer chamber
WO2016191621A1 (en) *	2015-05-27	2016-12-01	Applied Materials, Inc.	Methods and apparatus for a microwave batch curing process
KR102358561B1 (ko) *	2017-06-08	2022-02-04	삼성전자주식회사	기판 처리 장치 및 집적회로 소자 제조 장치
KR102238028B1 (ko) *	2020-10-22	2021-04-08	주식회사 한화	기판 처리용 밀폐형 열처리 장치

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4491810A (en) *	1983-01-28	1985-01-01	Andrew Corporation	Multi-port, multi-frequency microwave combiner with overmoded square waveguide section
US4520750A (en) *	1983-10-21	1985-06-04	Ashland Oil, Inc.	Gas curing chamber for flat substrates
US4491610A (en)	1983-10-21	1985-01-01	Ashland Oil, Inc.	Gas curing chamber for flat substrates
JPS6411320A (en) *	1987-07-06	1989-01-13	Toshiba Corp	Photo-cvd device
US4854266A (en) *	1987-11-02	1989-08-08	Btu Engineering Corporation	Cross-flow diffusion furnace
JP2644912B2 (ja) *	1990-08-29	1997-08-25	株式会社日立製作所	真空処理装置及びその運転方法
JPH04215429A (ja)	1990-12-13	1992-08-06	Mitsubishi Electric Corp	半導体製造装置
US5228206A (en) *	1992-01-15	1993-07-20	Submicron Systems, Inc.	Cluster tool dry cleaning system
US5332280A (en) *	1992-10-09	1994-07-26	Dupont J	Demountable deflector for shipping containers and the like
JP2833946B2 (ja) *	1992-12-08	1998-12-09	日本電気株式会社	エッチング方法および装置
JP3125199B2 (ja) *	1993-03-18	2001-01-15	東京エレクトロン株式会社	縦型熱処理装置
US5399923A (en) *	1993-07-26	1995-03-21	Texas Instruments Incorporated	Field programmable gate array device with antifuse overcurrent protection
US5725554A (en) *	1993-10-08	1998-03-10	Richard-Allan Medical Industries, Inc.	Surgical staple and stapler
US5439553A (en) *	1994-03-30	1995-08-08	Penn State Research Foundation	Controlled etching of oxides via gas phase reactions
JPH08186081A (ja) *	1994-12-29	1996-07-16	F T L:Kk	半導体装置の製造方法及び半導体装置の製造装置
US6002109A (en) *	1995-07-10	1999-12-14	Mattson Technology, Inc.	System and method for thermal processing of a semiconductor substrate
FR2747112B1 (fr)	1996-04-03	1998-05-07	Commissariat Energie Atomique	Dispositif de transport d'objets plats et procede de transfert de ces objets entre ledit dispositif et une machine de traitement
JP3721478B2 (ja)	1996-04-12	2005-11-30	フオスター電機株式会社	スピーカ用振動板
US5846073A (en) *	1997-03-07	1998-12-08	Semitool, Inc.	Semiconductor furnace processing vessel base
US6673673B1 (en) *	1997-04-22	2004-01-06	Samsung Electronics Co., Ltd.	Method for manufacturing a semiconductor device having hemispherical grains
KR100252213B1 (ko) *	1997-04-22	2000-05-01	윤종용	반도체소자제조장치및그제조방법
JPH10321584A (ja) *	1997-05-22	1998-12-04	Mitsubishi Electric Corp	乾燥装置および乾燥方法
KR19990010200A (ko) *	1997-07-15	1999-02-05	윤종용	감압식 건조 장치를 이용하는 반도체장치 건조방법
US5937541A (en) *	1997-09-15	1999-08-17	Siemens Aktiengesellschaft	Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
US6185839B1 (en) *	1998-05-28	2001-02-13	Applied Materials, Inc.	Semiconductor process chamber having improved gas distributor
US6016611A (en) *	1998-07-13	2000-01-25	Applied Komatsu Technology, Inc.	Gas flow control in a substrate processing system
JP3664897B2 (ja) *	1998-11-18	2005-06-29	東京エレクトロン株式会社	縦型熱処理装置
JP3030852B1 (ja) *	1998-12-25	2000-04-10	株式会社東京機械製作所	複数の見開き面を有する１セクション多ペ―ジ印刷物を作成可能な輪転機
US6178660B1 (en) *	1999-08-03	2001-01-30	International Business Machines Corporation	Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer
US6161304A (en) *	1999-10-05	2000-12-19	M&R Printing Equipment, Inc.	Dryer assembly
NL1013989C2 (nl) *	1999-12-29	2001-07-02	Asm Int	Werkwijze en inrichting voor het behandelen van een wafer.
US6286231B1 (en)	2000-01-12	2001-09-11	Semitool, Inc.	Method and apparatus for high-pressure wafer processing and drying
US6175023B1 (en) *	2000-01-31	2001-01-16	Jian Liu	Synthesis of water soluble 9-dihydro-paclitaxel derivatives from 9-dihydro-13-acetylbaccatin III
KR100360401B1 (ko) *	2000-03-17	2002-11-13	삼성전자 주식회사	슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
EP1204139A4 (de) *	2000-04-27	2010-04-28	Ebara Corp	Rotierende halterung und anordnung zur bearbeitung von halbleitersubstraten
JP3833439B2 (ja)	2000-05-02	2006-10-11	株式会社ノリタケカンパニーリミテド	大型基板用多段加熱炉、及び両面加熱式遠赤外線パネルヒーター、並びに該加熱炉内の給排気方法
US6391804B1 (en)	2000-06-09	2002-05-21	Primaxx, Inc.	Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor
US6798054B1 (en) *	2000-07-28	2004-09-28	Siliconware Precision Industries Co., Ltd.	Method of packaging multi chip module
US6381804B1 (en) *	2000-09-29	2002-05-07	Oreck Holdings, Llc	Apparatus for conducting air into bags of vacuum cleaners
US6428847B1 (en) *	2000-10-16	2002-08-06	Primaxx, Inc.	Vortex based CVD reactor
JP2002261081A (ja) *	2001-03-01	2002-09-13	Asm Japan Kk	半導体ウエハのエッチング装置及び方法
JP2003017543A (ja) *	2001-06-28	2003-01-17	Hitachi Kokusai Electric Inc	基板処理装置、基板処理方法、半導体装置の製造方法および搬送装置
US6725564B2 (en)	2001-08-27	2004-04-27	Applied Materials, Inc.	Processing platform with integrated particle removal system
US6902395B2 (en)	2002-03-15	2005-06-07	Asm International, N.V.	Multilevel pedestal for furnace
JP2004091829A (ja) *	2002-08-30	2004-03-25	Tokyo Electron Ltd	エッチング方法及びエッチング装置
US6849131B2 (en) *	2002-10-05	2005-02-01	Taiwan Semiconductor Manufacturing Co., Ltd	Truncated dummy plate for process furnace
US6792693B2 (en) *	2002-10-08	2004-09-21	Taiwan Semiconductor Manufacturing Co., Ltd	Wafer dryer system for PRS wet bench
WO2005038877A2 (en) *	2003-10-14	2005-04-28	Rudolph Technologies, Inc.	MOLECULAR AIRBORNE CONTAMINANTS (MACs) REMOVAL AND WAFER SURFACE SUSTAINING SYSTEM AND METHOD

2004
- 2004-11-18 US US10/991,554 patent/US7771563B2/en active Active
2005
- 2005-11-18 WO PCT/US2005/042232 patent/WO2006055937A2/en active Application Filing
- 2005-11-18 EP EP05849532A patent/EP1859077B1/de active Active
- 2005-11-18 JP JP2007543381A patent/JP4912316B2/ja active Active
- 2005-11-18 AT AT05849532T patent/ATE499702T1/de not_active IP Right Cessation
- 2005-11-18 KR KR1020077013579A patent/KR101154272B1/ko active IP Right Grant
- 2005-11-18 DE DE602005026581T patent/DE602005026581D1/de active Active

Also Published As

Publication number	Publication date
KR20070086275A (ko)	2007-08-27
US20060102287A1 (en)	2006-05-18
WO2006055937A2 (en)	2006-05-26
ATE499702T1 (de)	2011-03-15
WO2006055937A3 (en)	2007-06-07
US7771563B2 (en)	2010-08-10
EP1859077A4 (de)	2010-03-31
JP2008521258A (ja)	2008-06-19
JP4912316B2 (ja)	2012-04-11
EP1859077A2 (de)	2007-11-28
EP1859077B1 (de)	2011-02-23
WO2006055937A8 (en)	2007-08-23
KR101154272B1 (ko)	2012-06-13

Publication	Publication Date	Title
DE602005026581D1 (de)	2011-04-07	Ikroelektromechanischen systemen
WO2011136974A3 (en)	2012-03-01	Process chambers having shared resources and methods of use thereof
TW200711029A (en)	2007-03-16	Substrate processing apparatus and substrate stage used therein
TW200707680A (en)	2007-02-16	Heating and cooling of substrate support
WO2006091448A3 (en)	2009-04-09	Chemical vapor deposition reactor having multiple inlets
JP2013513239A5 (de)	2014-01-16
WO2009089245A3 (en)	2009-09-11	Heated showerhead assembly
TW200728495A (en)	2007-08-01	Method of deposite thin film with CVD reactor and the gas inlet element for a CVD reactor
WO2004063421A3 (en)	2005-12-22	Deposition chamber surface enhancement and resulting deposition chambers
TWM402580U (en)	2011-04-21	Outer electrode of showerhead electrode assembly
WO2011137069A3 (en)	2012-03-01	Twin chamber processing system
TW200709278A (en)	2007-03-01	Method and apparatus to control semiconductor film deposition characteristics
WO2010123877A3 (en)	2011-01-20	Cvd apparatus for improved film thickness non-uniformity and particle performance
TW200709256A (en)	2007-03-01	Active cooling substrate support
WO2012058005A3 (en)	2012-06-21	Apparatus having improved substrate temperature uniformity using direct heating methods
PL1773509T3 (pl)	2009-06-30	Sposób powlekania rur
WO2012125275A3 (en)	2013-03-21	Apparatus for monitoring and controlling substrate temperature
TW200710253A (en)	2007-03-16	Integrated metrology tools for monitoring and controlling large area substrate processing chambers
TW200704817A (en)	2007-02-01	Deposition apparatus and deposition method
WO2010114274A3 (en)	2010-12-23	Apparatus for depositing film and method for depositing film and system for depositing film
TW200732490A (en)	2007-09-01	Sputtering with cooled target
WO2013154504A3 (en)	2014-08-28	Microwave plasma chemical vapour deposition apparatus
WO2011149678A3 (en)	2012-04-19	Linear batch chemical vapor deposition system
SG10201901906YA (en)	2019-04-29	Atmospheric epitaxial deposition chamber
MX2010006214A (es)	2010-06-23	Unidad de recubrimiento al vacio de pvd.