DE60205560D1 - Eingebaute mikroelektromechanische (MEMS) Sensorvorrichtung für Leistungshalbleiter - Google Patents

Eingebaute mikroelektromechanische (MEMS) Sensorvorrichtung für Leistungshalbleiter

Info

Publication number
DE60205560D1
DE60205560D1 DE60205560T DE60205560T DE60205560D1 DE 60205560 D1 DE60205560 D1 DE 60205560D1 DE 60205560 T DE60205560 T DE 60205560T DE 60205560 T DE60205560 T DE 60205560T DE 60205560 D1 DE60205560 D1 DE 60205560D1
Authority
DE
Germany
Prior art keywords
microelectromechanical
mems
built
sensor device
power semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60205560T
Other languages
English (en)
Other versions
DE60205560T2 (de
Inventor
Richard D Harris
Robert J Kretschmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rockwell Automation Technologies Inc
Original Assignee
Rockwell Automation Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell Automation Technologies Inc filed Critical Rockwell Automation Technologies Inc
Application granted granted Critical
Publication of DE60205560D1 publication Critical patent/DE60205560D1/de
Publication of DE60205560T2 publication Critical patent/DE60205560T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2621Circuits therefor for testing field effect transistors, i.e. FET's
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/146Measuring arrangements for current not covered by other subgroups of G01R15/14, e.g. using current dividers, shunts, or measuring a voltage drop
    • G01R15/148Measuring arrangements for current not covered by other subgroups of G01R15/14, e.g. using current dividers, shunts, or measuring a voltage drop involving the measuring of a magnetic field or electric field
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
DE60205560T 2001-10-26 2002-10-25 Eingebaute mikroelektromechanische (MEMS) Sensorvorrichtung für Leistungshalbleiter Expired - Lifetime DE60205560T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39731 1998-03-16
US10/039,731 US6690178B2 (en) 2001-10-26 2001-10-26 On-board microelectromechanical system (MEMS) sensing device for power semiconductors

Publications (2)

Publication Number Publication Date
DE60205560D1 true DE60205560D1 (de) 2005-09-22
DE60205560T2 DE60205560T2 (de) 2006-06-08

Family

ID=21907066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60205560T Expired - Lifetime DE60205560T2 (de) 2001-10-26 2002-10-25 Eingebaute mikroelektromechanische (MEMS) Sensorvorrichtung für Leistungshalbleiter

Country Status (3)

Country Link
US (1) US6690178B2 (de)
EP (1) EP1306678B1 (de)
DE (1) DE60205560T2 (de)

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US7221144B2 (en) * 2004-06-07 2007-05-22 General Electric Company Micro-electromechanical system (MEMS) based current and magnetic field sensor having improved sensitivities
EP1871527B1 (de) 2004-12-23 2017-09-27 Abbott Point of Care Inc. Molekulares diagnostiksystem
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US7132822B1 (en) * 2006-02-28 2006-11-07 Watlow Electric Manufacturing Company Multi-processor restart stabilization system and method
US8045298B2 (en) * 2007-12-20 2011-10-25 Hitachi Global Storage Technologies Netherlands B.V. Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same
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US10033179B2 (en) 2014-07-02 2018-07-24 Analog Devices Global Unlimited Company Method of and apparatus for protecting a switch, such as a MEMS switch, and to a MEMS switch including such a protection apparatus
FR3042905B1 (fr) * 2015-10-23 2018-11-16 Vmicro Dispositif et systeme microelectromecanique avec transducteur resistif a faible impedance
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US20220368249A1 (en) * 2020-12-18 2022-11-17 Board Of Regents, The University Of Texas System MEMS Nanopositioner and Method of Fabrication

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Also Published As

Publication number Publication date
EP1306678B1 (de) 2005-08-17
EP1306678A1 (de) 2003-05-02
US6690178B2 (en) 2004-02-10
DE60205560T2 (de) 2006-06-08
US20030080754A1 (en) 2003-05-01

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