DE60209990D1 - Stabilisatoren als Polymerisationsinhibitoren von substituierten Cyclotetrasiloxanen - Google Patents

Stabilisatoren als Polymerisationsinhibitoren von substituierten Cyclotetrasiloxanen

Info

Publication number
DE60209990D1
DE60209990D1 DE60209990T DE60209990T DE60209990D1 DE 60209990 D1 DE60209990 D1 DE 60209990D1 DE 60209990 T DE60209990 T DE 60209990T DE 60209990 T DE60209990 T DE 60209990T DE 60209990 D1 DE60209990 D1 DE 60209990D1
Authority
DE
Germany
Prior art keywords
cyclotetrasiloxane
stabilizers
polymerization inhibitors
tetramethylcyclotetrasiloxane
neutral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60209990T
Other languages
English (en)
Other versions
DE60209990T2 (de
Inventor
Steven Gerard Mayorga
Manchao Xiao
Thomas Richard Gaffney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of DE60209990D1 publication Critical patent/DE60209990D1/de
Application granted granted Critical
Publication of DE60209990T2 publication Critical patent/DE60209990T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/20—Purification, separation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
DE60209990T 2001-12-21 2002-12-13 Stabilisatoren als Polymerisationsinhibitoren von substituierten Cyclotetrasiloxanen Expired - Lifetime DE60209990T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29892 2001-12-21
US10/029,892 US6858697B2 (en) 2001-12-21 2001-12-21 Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane

Publications (2)

Publication Number Publication Date
DE60209990D1 true DE60209990D1 (de) 2006-05-11
DE60209990T2 DE60209990T2 (de) 2006-09-14

Family

ID=21851430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60209990T Expired - Lifetime DE60209990T2 (de) 2001-12-21 2002-12-13 Stabilisatoren als Polymerisationsinhibitoren von substituierten Cyclotetrasiloxanen

Country Status (9)

Country Link
US (1) US6858697B2 (de)
EP (1) EP1321469B1 (de)
JP (2) JP2003238578A (de)
KR (1) KR100530708B1 (de)
CN (2) CN1911937B (de)
AT (1) ATE321058T1 (de)
DE (1) DE60209990T2 (de)
IL (1) IL153467A (de)
SG (1) SG107629A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7108771B2 (en) * 2001-12-13 2006-09-19 Advanced Technology Materials, Inc. Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
US7456488B2 (en) * 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7101948B2 (en) * 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
US20080042105A1 (en) * 2001-12-21 2008-02-21 Air Products And Chemicals, Inc. Stabilizers To Inhibit The Polymerization of Substituted Cyclotetrasiloxane
US6936551B2 (en) * 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
EP1573086A4 (de) * 2002-09-18 2012-10-03 Air Prod & Chem Additive zur verhinderung des abbaus vonalkylhydrogensiloxanen
JP3788624B1 (ja) * 2005-01-18 2006-06-21 旭電化工業株式会社 シロキサン化合物及びフェノール化合物を含有してなる組成物
KR101378826B1 (ko) * 2005-09-12 2014-03-28 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 사이클릭 알켄 유도체의 분해를 방지하기 위한 첨가제
WO2007033075A2 (en) * 2005-09-12 2007-03-22 Fujifilm Electronic Materials U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US20080141901A1 (en) * 2006-12-18 2008-06-19 American Air Liquide, Inc. Additives to stabilize cyclotetrasiloxane and its derivatives
MX2008001141A (es) * 2007-02-09 2009-02-24 Rohm & Haas Metodo para reducir el olor en pinturas de latex.
EP1970398A1 (de) * 2007-03-12 2008-09-17 Schering Oy Verwendung von Tocopherol
US7968001B2 (en) * 2007-12-19 2011-06-28 Air Products And Chemicals, Inc. Stabilizers for the stabilization of unsaturated hydrocarbon-based precursor
CN102047395A (zh) * 2008-05-29 2011-05-04 瑞萨电子株式会社 制造硅烷化多孔绝缘膜的方法、制造半导体装置的方法和硅烷化材料
WO2010005937A1 (en) 2008-07-08 2010-01-14 Fujifilm Electronic Materials U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
CN102936333B (zh) * 2012-11-02 2014-07-30 陕西科技大学 一种芳香族超支化聚合物表面活性剂及其制备方法
US11713328B2 (en) * 2018-08-23 2023-08-01 Versum Materials Us, Llc Stable alkenyl or alkynyl-containing organosilicon precursor compositions
CN112505184B (zh) * 2020-11-30 2022-07-08 中国食品药品检定研究院 一种注射用头孢曲松钠丁基胶塞的质量评价方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2837550A (en) * 1955-05-18 1958-06-03 Gen Electric Hydroxyalkylcyclopolysiloxanes
US3344111A (en) 1966-09-28 1967-09-26 Gen Electric Preparation of stable copolymerizable organosilicon compositions containing a platinum catalyst and an acrylonitrile type compound
US3882083A (en) 1973-11-21 1975-05-06 Gen Electric Latent addition curable organopolysiloxane compositions
SU540892A1 (ru) * 1974-12-17 1976-12-30 Предприятие П/Я М-5314 Св зующее дл композиционных материалов
US3998865A (en) * 1975-03-12 1976-12-21 General Electric Company Process for the stabilization of hexamethyl-cyclotrisiloxane and the stabilized compositions resulting therefrom
SU663700A1 (ru) * 1977-01-06 1979-05-25 Московский Ордена Трудового Красного Знамени Институт Тонкой Химической Технологии Им. М.В.Ломоносова Способ получени олигоорганоциклосилоксанов
US5028566A (en) 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films
US5118735A (en) * 1990-10-05 1992-06-02 Hercules Incorporated Organosilicon composition comprising stabilizers
EP0654497B1 (de) 1993-11-18 1999-02-10 Shin-Etsu Chemical Co., Ltd. Härtungskontrolle von Silikongummizusammensetzungen
JP2938734B2 (ja) * 1993-11-26 1999-08-25 信越化学工業株式会社 低分子量ポリメチルシクロポリシロキサンの安定化方法
US5380812A (en) 1994-01-10 1995-01-10 Dow Corning Corporation One part curable compositions containing deactivated hydrosilation catalyst and method for preparing same
JPH11145179A (ja) 1997-11-11 1999-05-28 Matsushita Electron Corp 半導体装置
US6368359B1 (en) * 1999-12-17 2002-04-09 General Electric Company Process for stabilization of dry cleaning solutions
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films

Also Published As

Publication number Publication date
EP1321469B1 (de) 2006-03-22
CN1429927A (zh) 2003-07-16
IL153467A0 (en) 2003-07-06
EP1321469A1 (de) 2003-06-25
CN1911937B (zh) 2010-12-22
US20030149213A1 (en) 2003-08-07
SG107629A1 (en) 2004-12-29
KR20030053447A (ko) 2003-06-28
US6858697B2 (en) 2005-02-22
JP4897510B2 (ja) 2012-03-14
JP2003238578A (ja) 2003-08-27
CN1911937A (zh) 2007-02-14
KR100530708B1 (ko) 2005-11-24
IL153467A (en) 2006-12-10
DE60209990T2 (de) 2006-09-14
ATE321058T1 (de) 2006-04-15
JP2007176949A (ja) 2007-07-12

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