DE60213759D1 - Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist - Google Patents
Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern istInfo
- Publication number
- DE60213759D1 DE60213759D1 DE60213759T DE60213759T DE60213759D1 DE 60213759 D1 DE60213759 D1 DE 60213759D1 DE 60213759 T DE60213759 T DE 60213759T DE 60213759 T DE60213759 T DE 60213759T DE 60213759 D1 DE60213759 D1 DE 60213759D1
- Authority
- DE
- Germany
- Prior art keywords
- dominanted
- empty
- oxidation
- silicon
- core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26441501P | 2001-01-26 | 2001-01-26 | |
| US264415P | 2001-01-26 | ||
| PCT/US2002/001782 WO2002059400A2 (en) | 2001-01-26 | 2002-01-22 | Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60213759D1 true DE60213759D1 (de) | 2006-09-21 |
| DE60213759T2 DE60213759T2 (de) | 2006-11-30 |
Family
ID=23005980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60213759T Expired - Lifetime DE60213759T2 (de) | 2001-01-26 | 2002-01-22 | Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6846539B2 (de) |
| EP (3) | EP1688519A3 (de) |
| JP (2) | JP4439810B2 (de) |
| KR (2) | KR100805518B1 (de) |
| CN (2) | CN100348782C (de) |
| DE (1) | DE60213759T2 (de) |
| TW (1) | TWI222666B (de) |
| WO (1) | WO2002059400A2 (de) |
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| JP4192530B2 (ja) * | 2002-08-27 | 2008-12-10 | 株式会社Ｓｕｍｃｏ | パーティクルモニター用シリコン単結晶ウェーハの製造方法 |
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| KR100531552B1 (ko) * | 2003-09-05 | 2005-11-28 | 주식회사 하이닉스반도체 | 실리콘 웨이퍼 및 그 제조방법 |
| JP2005162599A (ja) | 2003-12-03 | 2005-06-23 | Siltron Inc | 均一なベイカンシ欠陥を有するシリコン単結晶インゴット、シリコンウエハ、シリコン単結晶インゴットの製造装置、及びシリコン単結晶インゴットの製造方法 |
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-
2002
- 2002-01-22 KR KR1020077006547A patent/KR100805518B1/ko active IP Right Grant
- 2002-01-22 CN CNB028050983A patent/CN100348782C/zh not_active Expired - Fee Related
- 2002-01-22 JP JP2002559879A patent/JP4439810B2/ja not_active Expired - Fee Related
- 2002-01-22 DE DE60213759T patent/DE60213759T2/de not_active Expired - Lifetime
- 2002-01-22 EP EP06111930A patent/EP1688519A3/de not_active Withdrawn
- 2002-01-22 EP EP02714762A patent/EP1356139B1/de not_active Expired - Lifetime
- 2002-01-22 CN CNA200710165044XA patent/CN101230482A/zh active Pending
- 2002-01-22 KR KR1020037009878A patent/KR100854186B1/ko not_active IP Right Cessation
- 2002-01-22 EP EP10177865.2A patent/EP2295619B1/de not_active Expired - Lifetime
- 2002-01-22 WO PCT/US2002/001782 patent/WO2002059400A2/en active IP Right Grant
- 2002-01-22 US US10/054,629 patent/US6846539B2/en not_active Expired - Lifetime
- 2002-01-25 TW TW091101251A patent/TWI222666B/zh not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| CN100348782C (zh) | 2007-11-14 |
| KR20070039620A (ko) | 2007-04-12 |
| KR20030086990A (ko) | 2003-11-12 |
| JP4644729B2 (ja) | 2011-03-02 |
| US6846539B2 (en) | 2005-01-25 |
| JP2005506261A (ja) | 2005-03-03 |
| EP1688519A2 (de) | 2006-08-09 |
| EP2295619B1 (de) | 2014-04-23 |
| EP2295619A1 (de) | 2011-03-16 |
| EP1356139A2 (de) | 2003-10-29 |
| JP2009029703A (ja) | 2009-02-12 |
| CN1500159A (zh) | 2004-05-26 |
| WO2002059400A3 (en) | 2002-11-21 |
| DE60213759T2 (de) | 2006-11-30 |
| TWI222666B (en) | 2004-10-21 |
| KR100854186B1 (ko) | 2008-08-26 |
| EP1688519A3 (de) | 2007-10-17 |
| US7217320B2 (en) | 2007-05-15 |
| JP4439810B2 (ja) | 2010-03-24 |
| US20050150445A1 (en) | 2005-07-14 |
| WO2002059400A2 (en) | 2002-08-01 |
| CN101230482A (zh) | 2008-07-30 |
| US20020100410A1 (en) | 2002-08-01 |
| EP1356139B1 (de) | 2006-08-09 |
| KR100805518B1 (ko) | 2008-02-20 |
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