DE60215291D1 - Halbleiter Speicheranordnung - Google Patents

Halbleiter Speicheranordnung

Info

Publication number
DE60215291D1
DE60215291D1 DE60215291T DE60215291T DE60215291D1 DE 60215291 D1 DE60215291 D1 DE 60215291D1 DE 60215291 T DE60215291 T DE 60215291T DE 60215291 T DE60215291 T DE 60215291T DE 60215291 D1 DE60215291 D1 DE 60215291D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60215291T
Other languages
English (en)
Other versions
DE60215291T2 (de
Inventor
Tadayuki Taura
Shigeru Atsumi
Shuji Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60215291D1 publication Critical patent/DE60215291D1/de
Application granted granted Critical
Publication of DE60215291T2 publication Critical patent/DE60215291T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/81—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a hierarchical redundancy scheme
DE60215291T 2001-12-14 2002-12-13 Halbleiter Speicheranordnung Expired - Lifetime DE60215291T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001381412A JP2003187591A (ja) 2001-12-14 2001-12-14 半導体記憶装置
JP2001381412 2001-12-14

Publications (2)

Publication Number Publication Date
DE60215291D1 true DE60215291D1 (de) 2006-11-23
DE60215291T2 DE60215291T2 (de) 2007-05-10

Family

ID=19187333

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60215291T Expired - Lifetime DE60215291T2 (de) 2001-12-14 2002-12-13 Halbleiter Speicheranordnung

Country Status (6)

Country Link
US (1) US6707733B2 (de)
EP (1) EP1320105B1 (de)
JP (1) JP2003187591A (de)
KR (1) KR100470371B1 (de)
CN (1) CN1267997C (de)
DE (1) DE60215291T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4235122B2 (ja) * 2004-02-06 2009-03-11 シャープ株式会社 半導体記憶装置及び半導体記憶装置のテスト方法
US7085180B2 (en) * 2004-02-12 2006-08-01 International Business Machines Corporation Method and structure for enabling a redundancy allocation during a multi-bank operation
JP4722123B2 (ja) * 2005-02-23 2011-07-13 スパンション エルエルシー 記憶装置の冗長設定方法、および記憶装置
US7447066B2 (en) * 2005-11-08 2008-11-04 Sandisk Corporation Memory with retargetable memory cell redundancy
WO2009116117A1 (ja) * 2008-03-19 2009-09-24 富士通マイクロエレクトロニクス株式会社 半導体メモリ、システム、半導体メモリの動作方法および半導体メモリの製造方法
KR101600280B1 (ko) 2014-05-28 2016-03-21 주식회사 피델릭스 사용중에 발생되는 결함을 효율적으로 리페어할 수 있는 플래시 메모리 장치 및 그의 리페어 방법
US20160012916A1 (en) * 2014-07-10 2016-01-14 Kabushiki Kaisha Toshiba Semiconductor memory device and memory system
US9741421B1 (en) * 2016-04-05 2017-08-22 Micron Technology, Inc. Refresh circuitry
JP7171286B2 (ja) * 2018-07-20 2022-11-15 ラピスセミコンダクタ株式会社 半導体メモリ装置
JP7112904B2 (ja) * 2018-07-20 2022-08-04 ラピスセミコンダクタ株式会社 半導体メモリのテスト方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3019869B2 (ja) * 1990-10-16 2000-03-13 富士通株式会社 半導体メモリ
JP2001052495A (ja) * 1999-06-03 2001-02-23 Toshiba Corp 半導体メモリ
JP2002015593A (ja) * 2000-06-27 2002-01-18 Toshiba Corp 半導体記憶装置
US6552939B1 (en) * 2001-10-15 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having disturb test circuit

Also Published As

Publication number Publication date
KR100470371B1 (ko) 2005-02-11
US20030117867A1 (en) 2003-06-26
CN1438707A (zh) 2003-08-27
EP1320105A2 (de) 2003-06-18
EP1320105A3 (de) 2005-03-09
DE60215291T2 (de) 2007-05-10
US6707733B2 (en) 2004-03-16
JP2003187591A (ja) 2003-07-04
CN1267997C (zh) 2006-08-02
KR20030051317A (ko) 2003-06-25
EP1320105B1 (de) 2006-10-11

Similar Documents

Publication Publication Date Title
DE60238891D1 (de) Halbleiterspeicheranordnung
DE60222354D1 (de) Halbleiterspeicheranordnung
DE60239899D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60213560D1 (de) Halbleiterspeicher
DE60121865D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60126383D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60331799D1 (de) Halbleitervorrichtung
DE50112868D1 (de) Halbleiter-chip
DE60122045D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60129073D1 (de) Halbleiterspeicheranordnung
DE60102257D1 (de) Halbleiterspeicheranordnung
DE60213889D1 (de) Halbleiteranordnung
DE60032644D1 (de) Halbleiter-speicherbaustein
DE60227330D1 (de) Ferroelektrischer Halbleiterspeicher
DE60142141D1 (de) Halbleiterbauelement
DE60211244D1 (de) Halbleiterbauelement
DE60317381D1 (de) Halbleiterspeicher
DE60218009D1 (de) Halbleiterspeichervorrichtung
DE60336787D1 (de) Halbleiterspeicher
DE10191585B8 (de) Halbleitervorrichtung
DE60100612D1 (de) Synchrone Halbleiterspeichervorrichtung
DE60229712D1 (de) Halbleiterspeicher
DE60107174D1 (de) Halbleiterspeicheranordnung
DE60141200D1 (de) Halbleiterspeichersystem
DE60221466D1 (de) Nichtflüchtige Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition