DE60215956D1 - Schlämmzusammensetzung zur verwendung beim chemisch-mechanischen polieren von metallverdrahtung - Google Patents

Schlämmzusammensetzung zur verwendung beim chemisch-mechanischen polieren von metallverdrahtung

Info

Publication number
DE60215956D1
DE60215956D1 DE60215956T DE60215956T DE60215956D1 DE 60215956 D1 DE60215956 D1 DE 60215956D1 DE 60215956 T DE60215956 T DE 60215956T DE 60215956 T DE60215956 T DE 60215956T DE 60215956 D1 DE60215956 D1 DE 60215956D1
Authority
DE
Germany
Prior art keywords
bleaming
chemical
composition
mechanical polishing
metal wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60215956T
Other languages
English (en)
Other versions
DE60215956T2 (de
Inventor
Jae Seok Lee
Won Joong Do
Hyun Soo Roh
Kil Sung Lee
Jong Won Lee
Bo Un Yoon
Sang Rok Hah
Joon Sang Park
Chang Ki Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cheil Industries Inc
Original Assignee
Cheil Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2002-0028052A external-priority patent/KR100459101B1/ko
Application filed by Cheil Industries Inc filed Critical Cheil Industries Inc
Application granted granted Critical
Publication of DE60215956D1 publication Critical patent/DE60215956D1/de
Publication of DE60215956T2 publication Critical patent/DE60215956T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE60215956T 2001-08-09 2002-08-06 Schlämmzusammensetzung zur verwendung beim chemisch-mechanischen polieren von metallverdrahtung Expired - Lifetime DE60215956T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR2001047895 2001-08-09
KR20010047895 2001-08-09
KR2002028052 2002-05-21
KR10-2002-0028052A KR100459101B1 (ko) 2001-08-09 2002-05-21 금속배선용 ｃｍｐ 슬러리 조성물
PCT/KR2002/001492 WO2003015148A1 (en) 2001-08-09 2002-08-06 Slurry composition for use in chemical mechanical polishing of metal wiring

Publications (2)

Publication Number Publication Date
DE60215956D1 true DE60215956D1 (de) 2006-12-21
DE60215956T2 DE60215956T2 (de) 2007-05-10

Family

ID=36096131

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60215956T Expired - Lifetime DE60215956T2 (de) 2001-08-09 2002-08-06 Schlämmzusammensetzung zur verwendung beim chemisch-mechanischen polieren von metallverdrahtung

Country Status (8)

Country Link
US (1) US6930054B2 (de)
EP (1) EP1421610B1 (de)
JP (2) JP3987490B2 (de)
CN (1) CN1243370C (de)
DE (1) DE60215956T2 (de)
IL (1) IL160184A0 (de)
TW (1) TW591089B (de)
WO (1) WO2003015148A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
EP1616926A1 (de) * 2004-07-15 2006-01-18 Interuniversitair Microelektronica Centrum ( Imec) Aufschlämmungszusammensetzung und verfahren zum chemisch-mechanischen polieren von Kupfer integriert in einer Wolfram-Barriereschicht
CN100468675C (zh) * 2004-12-22 2009-03-11 新日铁化学株式会社 Cof基板用层合体的制造方法
JP4952155B2 (ja) * 2006-09-12 2012-06-13 富士通株式会社 研磨条件予測プログラム、記録媒体、研磨条件予測装置および研磨条件予測方法
KR20090002506A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
US20090001339A1 (en) * 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
KR102390630B1 (ko) * 2014-03-12 2022-04-26 씨엠씨 머티리얼즈, 인코포레이티드 텅스텐 재료의 cmp를 위한 조성물 및 방법
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
CN104130715B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种用于半导体集成电路中金属钨的抛光液及其制备方法
US11643599B2 (en) * 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography

Family Cites Families (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL149551B (nl) * 1964-08-04 1976-05-17 Dow Chemical Co Werkwijze voor het reinigen en passiveren van ijzerhoudende metaaloppervlakken, waarop metallisch koper is afgezet.
US3597290A (en) * 1968-03-25 1971-08-03 Mitsubishi Edogawa Kagaku Kk Method for chemically dissolving metal
US3681022A (en) * 1970-05-01 1972-08-01 Fmc Corp Manufacture of stable hydrogen peroxide solutions
JPS5435125B2 (de) * 1972-01-28 1979-10-31
SE400581B (sv) * 1974-12-13 1978-04-03 Nordnero Ab Bad for kemisk polering av koppar och dess legeringar
JPS5177404A (de) * 1974-12-26 1976-07-05 Fuji Photo Film Co Ltd
US3962005A (en) * 1975-06-30 1976-06-08 Zenith Radio Corporation Method for etching shadow mask and regenerating etchant
SE425007B (sv) * 1976-01-05 1982-08-23 Shipley Co Stabil etslosning omfattande svavelsyra och veteperoxid samt anvendning av densamma
US4144119A (en) * 1977-09-30 1979-03-13 Dutkewych Oleh B Etchant and process
US4140646A (en) * 1977-11-08 1979-02-20 Dart Industries Inc. Dissolution of metals with a selenium catalyzed H2 O2 -H2 SO4 etchant containing t-butyl hydroperoxide
US4405571A (en) * 1979-06-22 1983-09-20 Mta Muszaki Fizikai Kutato Intezete Process for selective dissolution of molybdenum in the presence of tungsten
US4444601A (en) * 1979-09-06 1984-04-24 Richardson Chemical Company Metal article passivated by a bath having an organic activator and a film-forming element
US4305779A (en) * 1980-05-28 1981-12-15 The United States Of America As Represented By The United States Department Of Energy Method of polishing nickel-base alloys and stainless steels
DE3237235C2 (de) * 1982-10-07 1986-07-10 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Polieren von III-V-Halbleiteroberflächen
GB8701759D0 (en) * 1987-01-27 1987-03-04 Laporte Industries Ltd Processing of semi-conductor materials
US4956313A (en) * 1987-08-17 1990-09-11 International Business Machines Corporation Via-filling and planarization technique
DE68927116T2 (de) * 1988-01-19 1997-02-06 Fujimi Inc Poliermasse
DE3807921A1 (de) 1988-03-10 1989-09-21 Henkel Kgaa Aktivator fuer anorganische perverbindungen
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5102499A (en) * 1991-01-07 1992-04-07 United Technologies Corporation Hydrogen embrittlement reduction in chemical milling
JP2629507B2 (ja) * 1991-01-14 1997-07-09 住友化学工業株式会社 過酸化水素水の精製方法
US5256402A (en) * 1991-09-13 1993-10-26 Colgate-Palmolive Company Abrasive tooth whitening dentifrice of improved stability
IT1251431B (it) * 1991-10-25 1995-05-09 Costante Fontana Composto ad elevate caratteristiche stabilizzanti particolarmente per perossidi inorganici utilizzati in applicazioni industriali
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
JP3149289B2 (ja) * 1993-03-24 2001-03-26 三菱製紙株式会社 画像形成材料及びそれを使用する画像形成方法
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5407526A (en) * 1993-06-30 1995-04-18 Intel Corporation Chemical mechanical polishing slurry delivery and mixing system
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5612250A (en) * 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3621151B2 (ja) * 1994-06-02 2005-02-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5498293A (en) * 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5662769A (en) * 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
US5534462A (en) * 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US6183665B1 (en) * 1995-06-07 2001-02-06 The Clorox Company Granular N-alkyl ammonium acetonitrile compositions
US6764613B2 (en) * 1995-06-07 2004-07-20 Mid-America Commercialization Corporation N-alkyl ammonium acetonitrile salts, methods therefor and compositions therewith
US5709593A (en) * 1995-10-27 1998-01-20 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5948697A (en) * 1996-05-23 1999-09-07 Lsi Logic Corporation Catalytic acceleration and electrical bias control of CMP processing
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5876625A (en) * 1996-07-22 1999-03-02 Carnegie Mellon University Metal ligand containing bleaching compositions
US5863838A (en) * 1996-07-22 1999-01-26 Motorola, Inc. Method for chemically-mechanically polishing a metal layer
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
US5846398A (en) * 1996-08-23 1998-12-08 Sematech, Inc. CMP slurry measurement and control technique
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
KR19980024187A (ko) 1996-09-03 1998-07-06 고사이 아키오 반도체 기판상의 금속막을 연마하기 위한 연마용 조성물 및 이의 용도
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5746606A (en) * 1996-09-30 1998-05-05 Hughes Electronics Spring loaded contact device and rotary connector
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5916011A (en) * 1996-12-26 1999-06-29 Motorola, Inc. Process for polishing a semiconductor device substrate
US5916855A (en) * 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US5922091A (en) * 1997-05-16 1999-07-13 National Science Council Of Republic Of China Chemical mechanical polishing slurry for metallic thin film
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6533832B2 (en) * 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
US6551367B2 (en) * 1998-09-22 2003-04-22 Cheil Industries Inc. Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing
DE69942615D1 (de) * 1998-10-23 2010-09-02 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend
SG99289A1 (en) * 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
JP3941284B2 (ja) * 1999-04-13 2007-07-04 株式会社日立製作所 研磨方法
US6488730B2 (en) * 1999-07-01 2002-12-03 Cheil Industries, Inc. Polishing composition
US6582623B1 (en) * 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
ATE405618T1 (de) * 1999-08-13 2008-09-15 Cabot Microelectronics Corp Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
KR100310234B1 (ko) * 1999-08-20 2001-11-14 안복현 반도체 소자 ｃｍｐ용 금속산화물 슬러리의 제조방법
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6347978B1 (en) * 1999-10-22 2002-02-19 Cabot Microelectronics Corporation Composition and method for polishing rigid disks
KR20010046395A (ko) * 1999-11-12 2001-06-15 안복현 연마용 조성물
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
EP1111038A1 (de) * 1999-12-22 2001-06-27 The Procter & Gamble Company Scheuermittel
US6733553B2 (en) * 2000-04-13 2004-05-11 Showa Denko Kabushiki Kaisha Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
KR100400030B1 (ko) * 2000-06-05 2003-09-29 삼성전자주식회사 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법
US6653242B1 (en) * 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6721628B1 (en) * 2000-07-28 2004-04-13 United Microelectronics Corp. Closed loop concentration control system for chemical mechanical polishing slurry
BR0113175A (pt) * 2000-08-09 2004-02-17 Hoffmann La Roche Derivados da quinolina como agentes antiinflamação
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
JP2002113431A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄方法
US6722950B1 (en) * 2000-11-07 2004-04-20 Planar Labs Corporation Method and apparatus for electrodialytic chemical mechanical polishing and deposition
KR100396883B1 (ko) * 2000-11-23 2003-09-02 삼성전자주식회사 화학기계적 연마용 슬러리 및 이를 이용한 구리 금속배선제조방법
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
US6805812B2 (en) * 2001-10-11 2004-10-19 Cabot Microelectronics Corporation Phosphono compound-containing polishing composition and method of using same
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US6527622B1 (en) * 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6682575B2 (en) * 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
US6689258B1 (en) * 2002-04-30 2004-02-10 Advanced Micro Devices, Inc. Electrochemically generated reactants for chemical mechanical planarization
US7677956B2 (en) * 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
US6604987B1 (en) * 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US7087187B2 (en) * 2002-06-06 2006-08-08 Grumbine Steven K Meta oxide coated carbon black for CMP
US6936543B2 (en) 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US7435165B2 (en) 2002-10-28 2008-10-14 Cabot Microelectronics Corporation Transparent microporous materials for CMP

Also Published As

Publication number Publication date
CN1243370C (zh) 2006-02-22
EP1421610B1 (de) 2006-11-08
DE60215956T2 (de) 2007-05-10
CN1539162A (zh) 2004-10-20
WO2003015148A1 (en) 2003-02-20
EP1421610A1 (de) 2004-05-26
EP1421610A4 (de) 2004-12-15
JP2007243209A (ja) 2007-09-20
JP2004538636A (ja) 2004-12-24
US20040244911A1 (en) 2004-12-09
JP3987490B2 (ja) 2007-10-10
TW591089B (en) 2004-06-11
IL160184A0 (en) 2004-07-25
US6930054B2 (en) 2005-08-16

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