DE60219635D1 - Methoden zur Herstellung von Kondensatorelektroden und Kondensatorkonstruktionen - Google Patents
Methoden zur Herstellung von Kondensatorelektroden und KondensatorkonstruktionenInfo
- Publication number
- DE60219635D1 DE60219635D1 DE60219635T DE60219635T DE60219635D1 DE 60219635 D1 DE60219635 D1 DE 60219635D1 DE 60219635 T DE60219635 T DE 60219635T DE 60219635 T DE60219635 T DE 60219635T DE 60219635 D1 DE60219635 D1 DE 60219635D1
- Authority
- DE
- Germany
- Prior art keywords
- methods
- production
- capacitor electrodes
- precursor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/932,236 US20030036242A1 (en) | 2001-08-16 | 2001-08-16 | Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions |
US932236 | 2001-08-16 | ||
PCT/US2002/026191 WO2003017341A2 (en) | 2001-08-16 | 2002-08-15 | Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60219635D1 true DE60219635D1 (de) | 2007-05-31 |
DE60219635T2 DE60219635T2 (de) | 2007-12-20 |
Family
ID=25461998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60219635T Expired - Lifetime DE60219635T2 (de) | 2001-08-16 | 2002-08-15 | Methoden zur Herstellung von Kondensatorelektroden und Kondensatorkonstruktionen |
Country Status (11)
Country | Link |
---|---|
US (5) | US20030036242A1 (de) |
EP (1) | EP1417701B1 (de) |
JP (1) | JP2005526377A (de) |
KR (2) | KR100632614B1 (de) |
CN (1) | CN100521086C (de) |
AT (1) | ATE360260T1 (de) |
AU (1) | AU2002327474A1 (de) |
DE (1) | DE60219635T2 (de) |
SG (1) | SG146440A1 (de) |
TW (1) | TW559982B (de) |
WO (1) | WO2003017341A2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100390849B1 (ko) * | 2001-06-30 | 2003-07-12 | 주식회사 하이닉스반도체 | 하프늄산화막을 구비하는 캐패시터의 제조 방법 |
KR100408726B1 (ko) * | 2001-12-10 | 2003-12-11 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
JP2005314713A (ja) * | 2004-04-27 | 2005-11-10 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | ルテニウム膜またはルテニウム酸化物膜の製造方法 |
KR100587686B1 (ko) * | 2004-07-15 | 2006-06-08 | 삼성전자주식회사 | 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법 |
US7720213B2 (en) | 2004-12-30 | 2010-05-18 | Alcatel Lucent | Parameter dependent ring tones |
US7713876B2 (en) * | 2005-09-28 | 2010-05-11 | Tokyo Electron Limited | Method for integrating a ruthenium layer with bulk copper in copper metallization |
JP5248508B2 (ja) * | 2006-09-22 | 2013-07-31 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ルテニウム含有膜の堆積方法 |
US7906175B2 (en) | 2007-02-21 | 2011-03-15 | Air Liquide Electronics U.S. Lp | Methods for forming a ruthenium-based film on a substrate |
WO2011106072A2 (en) | 2010-02-23 | 2011-09-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
US9613859B2 (en) | 2015-01-09 | 2017-04-04 | Applied Materials, Inc. | Direct deposition of nickel silicide nanowire |
Family Cites Families (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248636A (en) * | 1987-07-16 | 1993-09-28 | Texas Instruments Incorporated | Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation |
US5130172A (en) * | 1988-10-21 | 1992-07-14 | The Regents Of The University Of California | Low temperature organometallic deposition of metals |
US5314727A (en) * | 1992-07-28 | 1994-05-24 | Minnesota Mining & Mfg. Co./Regents Of The University Of Minnesota | Chemical vapor deposition of iron, ruthenium, and osmium |
US5403620A (en) * | 1992-10-13 | 1995-04-04 | Regents Of The University Of California | Catalysis in organometallic CVD of thin metal films |
KR100320364B1 (ko) * | 1993-03-23 | 2002-04-22 | 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 | 금속배선및그의형성방법 |
US5392189A (en) * | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
KR100362751B1 (ko) * | 1994-01-19 | 2003-02-11 | 소니 가부시끼 가이샤 | 반도체소자의콘택트홀및그형성방법 |
US5668040A (en) | 1995-03-20 | 1997-09-16 | Lg Semicon Co., Ltd. | Method for forming a semiconductor device electrode which also serves as a diffusion barrier |
US5874364A (en) * | 1995-03-27 | 1999-02-23 | Fujitsu Limited | Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same |
US5783716A (en) * | 1996-06-28 | 1998-07-21 | Advanced Technology Materials, Inc. | Platinum source compositions for chemical vapor deposition of platinum |
US5817175A (en) * | 1995-07-25 | 1998-10-06 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds |
US6313035B1 (en) * | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
US5856236A (en) | 1996-06-14 | 1999-01-05 | Micron Technology, Inc. | Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer |
JPH1079483A (ja) | 1996-09-04 | 1998-03-24 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPH10209392A (ja) * | 1997-01-22 | 1998-08-07 | Sony Corp | 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法 |
JP3027946B2 (ja) * | 1997-01-24 | 2000-04-04 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6211034B1 (en) * | 1997-04-14 | 2001-04-03 | Texas Instruments Incorporated | Metal patterning with adhesive hardmask layer |
US6074943A (en) * | 1997-04-16 | 2000-06-13 | Texas Instruments Incorporated | Sidewalls for guiding the via etch |
US6182712B1 (en) * | 1997-07-21 | 2001-02-06 | Inhale Therapeutic Systems | Power filling apparatus and methods for their use |
US6143191A (en) * | 1997-11-10 | 2000-11-07 | Advanced Technology Materials, Inc. | Method for etch fabrication of iridium-based electrode structures |
US6162172A (en) * | 1998-01-30 | 2000-12-19 | Edwards Lifesciences Corporation | Methods and apparatus for retracting tissue |
DE19808069A1 (de) * | 1998-02-26 | 1999-09-02 | Bosch Gmbh Robert | Verfahren zum Fixieren einer Rotorwicklung |
US6165834A (en) * | 1998-05-07 | 2000-12-26 | Micron Technology, Inc. | Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell |
US6286668B1 (en) * | 1998-05-19 | 2001-09-11 | Allen Moses | Flat article carrying case and storage system utilizing the same |
US6271131B1 (en) | 1998-08-26 | 2001-08-07 | Micron Technology, Inc. | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
US6063705A (en) * | 1998-08-27 | 2000-05-16 | Micron Technology, Inc. | Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide |
US6074945A (en) * | 1998-08-27 | 2000-06-13 | Micron Technology, Inc. | Methods for preparing ruthenium metal films |
US6197628B1 (en) * | 1998-08-27 | 2001-03-06 | Micron Technology, Inc. | Ruthenium silicide diffusion barrier layers and methods of forming same |
US6541067B1 (en) * | 1998-08-27 | 2003-04-01 | Micron Technology, Inc. | Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same |
US6284655B1 (en) * | 1998-09-03 | 2001-09-04 | Micron Technology, Inc. | Method for producing low carbon/oxygen conductive layers |
US6323081B1 (en) * | 1998-09-03 | 2001-11-27 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
US6187673B1 (en) * | 1998-09-03 | 2001-02-13 | Micron Technology, Inc. | Small grain size, conformal aluminum interconnects and method for their formation |
EP1130628A4 (de) * | 1998-10-14 | 2007-07-04 | Hitachi Ltd | Halbleitervorrichtung und herstellungsverfahren |
KR100272172B1 (ko) * | 1998-10-16 | 2000-11-15 | 윤종용 | 반도체장치의 커패시터 및 그 제조방법 |
US6358790B1 (en) | 1999-01-13 | 2002-03-19 | Agere Systems Guardian Corp. | Method of making a capacitor |
US6158610A (en) * | 1999-02-22 | 2000-12-12 | Kolvek; Scott Fenton | Two component fluid draining pan |
JP2000314348A (ja) * | 1999-05-06 | 2000-11-14 | Nippon Walbro:Kk | ロータリ絞り弁式気化器 |
WO2001024237A1 (en) * | 1999-09-28 | 2001-04-05 | Symetrix Corporation | Integrated circuits with barrier layers and methods of fabricating same |
US6294425B1 (en) * | 1999-10-14 | 2001-09-25 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit capacitors by electroplating electrodes from seed layers |
US6576546B2 (en) * | 1999-12-22 | 2003-06-10 | Texas Instruments Incorporated | Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications |
US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
JP2001308288A (ja) * | 2000-04-27 | 2001-11-02 | Sharp Corp | 半導体装置の製造方法および半導体装置 |
JP3826672B2 (ja) * | 2000-05-12 | 2006-09-27 | トヨタ自動車株式会社 | アクセルの全閉位置の学習制御装置およびその方法 |
US6429127B1 (en) * | 2000-06-08 | 2002-08-06 | Micron Technology, Inc. | Methods for forming rough ruthenium-containing layers and structures/methods using same |
US7405158B2 (en) * | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
AU2001295850A1 (en) | 2000-09-28 | 2002-04-08 | Nanocyte Inc. | Methods, compositions and devices utilizing stinging cells/capsules for delivering a therapeutic or a cosmetic agent into a tissue |
KR20020036916A (ko) * | 2000-11-11 | 2002-05-17 | 주승기 | 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자 |
US6524867B2 (en) * | 2000-12-28 | 2003-02-25 | Micron Technology, Inc. | Method for forming platinum-rhodium stack as an oxygen barrier |
US6492261B2 (en) * | 2000-12-30 | 2002-12-10 | Intel Corporation | Focused ion beam metal deposition |
US6464779B1 (en) * | 2001-01-19 | 2002-10-15 | Novellus Systems, Inc. | Copper atomic layer chemical vapor desposition |
JP2002222932A (ja) * | 2001-01-24 | 2002-08-09 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6518610B2 (en) * | 2001-02-20 | 2003-02-11 | Micron Technology, Inc. | Rhodium-rich oxygen barriers |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US6696368B2 (en) * | 2001-07-31 | 2004-02-24 | Micron Technology, Inc. | Titanium boronitride layer for high aspect ratio semiconductor devices |
US6780753B2 (en) * | 2002-05-31 | 2004-08-24 | Applied Materials Inc. | Airgap for semiconductor devices |
US7476618B2 (en) * | 2004-10-26 | 2009-01-13 | Asm Japan K.K. | Selective formation of metal layers in an integrated circuit |
US20060128160A1 (en) * | 2004-12-10 | 2006-06-15 | Yoo Woo S | Photoresist strip using solvent vapor |
US7429402B2 (en) * | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
US7459392B2 (en) * | 2005-03-31 | 2008-12-02 | Intel Corporation | Noble metal barrier and seed layer for semiconductors |
US20060261441A1 (en) * | 2005-05-23 | 2006-11-23 | Micron Technology, Inc. | Process for forming a low carbon, low resistance metal film during the manufacture of a semiconductor device and systems including same |
-
2001
- 2001-08-16 US US09/932,236 patent/US20030036242A1/en not_active Abandoned
-
2002
- 2002-05-07 US US10/140,608 patent/US20030036210A1/en not_active Abandoned
- 2002-08-15 KR KR1020067006025A patent/KR100632614B1/ko not_active IP Right Cessation
- 2002-08-15 WO PCT/US2002/026191 patent/WO2003017341A2/en active IP Right Grant
- 2002-08-15 AT AT02763466T patent/ATE360260T1/de not_active IP Right Cessation
- 2002-08-15 DE DE60219635T patent/DE60219635T2/de not_active Expired - Lifetime
- 2002-08-15 KR KR1020047002076A patent/KR100627503B1/ko not_active IP Right Cessation
- 2002-08-15 SG SG200601021-9A patent/SG146440A1/en unknown
- 2002-08-15 EP EP02763466A patent/EP1417701B1/de not_active Expired - Lifetime
- 2002-08-15 AU AU2002327474A patent/AU2002327474A1/en not_active Abandoned
- 2002-08-15 JP JP2003522151A patent/JP2005526377A/ja active Pending
- 2002-08-15 CN CNB028160576A patent/CN100521086C/zh not_active Expired - Fee Related
- 2002-08-16 TW TW091118530A patent/TW559982B/zh not_active IP Right Cessation
-
2004
- 2004-02-12 US US10/778,795 patent/US6924195B2/en not_active Expired - Fee Related
- 2004-08-31 US US10/931,559 patent/US7354842B2/en not_active Expired - Fee Related
-
2005
- 2005-08-22 US US11/209,080 patent/US20060040414A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2005526377A (ja) | 2005-09-02 |
CN100521086C (zh) | 2009-07-29 |
SG146440A1 (en) | 2008-10-30 |
WO2003017341A3 (en) | 2004-02-19 |
US20050032366A1 (en) | 2005-02-10 |
DE60219635T2 (de) | 2007-12-20 |
ATE360260T1 (de) | 2007-05-15 |
CN1543665A (zh) | 2004-11-03 |
AU2002327474A1 (en) | 2003-03-03 |
KR20060031708A (ko) | 2006-04-12 |
US20030036210A1 (en) | 2003-02-20 |
US20030036242A1 (en) | 2003-02-20 |
US7354842B2 (en) | 2008-04-08 |
KR100627503B1 (ko) | 2006-09-21 |
WO2003017341A2 (en) | 2003-02-27 |
WO2003017341B1 (en) | 2004-04-15 |
KR20040030959A (ko) | 2004-04-09 |
US6924195B2 (en) | 2005-08-02 |
US20060040414A1 (en) | 2006-02-23 |
EP1417701B1 (de) | 2007-04-18 |
TW559982B (en) | 2003-11-01 |
US20040161892A1 (en) | 2004-08-19 |
EP1417701A2 (de) | 2004-05-12 |
KR100632614B1 (ko) | 2006-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |