DE60219635D1 - Methoden zur Herstellung von Kondensatorelektroden und Kondensatorkonstruktionen - Google Patents

Methoden zur Herstellung von Kondensatorelektroden und Kondensatorkonstruktionen

Info

Publication number
DE60219635D1
DE60219635D1 DE60219635T DE60219635T DE60219635D1 DE 60219635 D1 DE60219635 D1 DE 60219635D1 DE 60219635 T DE60219635 T DE 60219635T DE 60219635 T DE60219635 T DE 60219635T DE 60219635 D1 DE60219635 D1 DE 60219635D1
Authority
DE
Germany
Prior art keywords
methods
production
capacitor electrodes
precursor
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60219635T
Other languages
English (en)
Other versions
DE60219635T2 (de
Inventor
Haining Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60219635D1 publication Critical patent/DE60219635D1/de
Publication of DE60219635T2 publication Critical patent/DE60219635T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
DE60219635T 2001-08-16 2002-08-15 Methoden zur Herstellung von Kondensatorelektroden und Kondensatorkonstruktionen Expired - Lifetime DE60219635T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/932,236 US20030036242A1 (en) 2001-08-16 2001-08-16 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
US932236 2001-08-16
PCT/US2002/026191 WO2003017341A2 (en) 2001-08-16 2002-08-15 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions

Publications (2)

Publication Number Publication Date
DE60219635D1 true DE60219635D1 (de) 2007-05-31
DE60219635T2 DE60219635T2 (de) 2007-12-20

Family

ID=25461998

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60219635T Expired - Lifetime DE60219635T2 (de) 2001-08-16 2002-08-15 Methoden zur Herstellung von Kondensatorelektroden und Kondensatorkonstruktionen

Country Status (11)

Country Link
US (5) US20030036242A1 (de)
EP (1) EP1417701B1 (de)
JP (1) JP2005526377A (de)
KR (2) KR100632614B1 (de)
CN (1) CN100521086C (de)
AT (1) ATE360260T1 (de)
AU (1) AU2002327474A1 (de)
DE (1) DE60219635T2 (de)
SG (1) SG146440A1 (de)
TW (1) TW559982B (de)
WO (1) WO2003017341A2 (de)

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KR100408726B1 (ko) * 2001-12-10 2003-12-11 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
JP2005314713A (ja) * 2004-04-27 2005-11-10 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude ルテニウム膜またはルテニウム酸化物膜の製造方法
KR100587686B1 (ko) * 2004-07-15 2006-06-08 삼성전자주식회사 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법
US7720213B2 (en) 2004-12-30 2010-05-18 Alcatel Lucent Parameter dependent ring tones
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US7906175B2 (en) 2007-02-21 2011-03-15 Air Liquide Electronics U.S. Lp Methods for forming a ruthenium-based film on a substrate
WO2011106072A2 (en) 2010-02-23 2011-09-01 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
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Also Published As

Publication number Publication date
JP2005526377A (ja) 2005-09-02
CN100521086C (zh) 2009-07-29
SG146440A1 (en) 2008-10-30
WO2003017341A3 (en) 2004-02-19
US20050032366A1 (en) 2005-02-10
DE60219635T2 (de) 2007-12-20
ATE360260T1 (de) 2007-05-15
CN1543665A (zh) 2004-11-03
AU2002327474A1 (en) 2003-03-03
KR20060031708A (ko) 2006-04-12
US20030036210A1 (en) 2003-02-20
US20030036242A1 (en) 2003-02-20
US7354842B2 (en) 2008-04-08
KR100627503B1 (ko) 2006-09-21
WO2003017341A2 (en) 2003-02-27
WO2003017341B1 (en) 2004-04-15
KR20040030959A (ko) 2004-04-09
US6924195B2 (en) 2005-08-02
US20060040414A1 (en) 2006-02-23
EP1417701B1 (de) 2007-04-18
TW559982B (en) 2003-11-01
US20040161892A1 (en) 2004-08-19
EP1417701A2 (de) 2004-05-12
KR100632614B1 (ko) 2006-10-09

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