DE60220245D1 - Integriertes Widerstandselement, Phasenwechsel Speicherelement mit solchem Widerstandselement, und Verfahren zu seiner Herstellung - Google Patents

Integriertes Widerstandselement, Phasenwechsel Speicherelement mit solchem Widerstandselement, und Verfahren zu seiner Herstellung

Info

Publication number
DE60220245D1
DE60220245D1 DE60220245T DE60220245T DE60220245D1 DE 60220245 D1 DE60220245 D1 DE 60220245D1 DE 60220245 T DE60220245 T DE 60220245T DE 60220245 T DE60220245 T DE 60220245T DE 60220245 D1 DE60220245 D1 DE 60220245D1
Authority
DE
Germany
Prior art keywords
resistance element
production
phase change
change storage
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60220245T
Other languages
English (en)
Inventor
Romina Zonca
Maria Santina Marangon
Santi Giorgio De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Ovonyx Inc
Original Assignee
STMicroelectronics SRL
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Ovonyx Inc filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60220245D1 publication Critical patent/DE60220245D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
DE60220245T 2002-01-17 2002-01-17 Integriertes Widerstandselement, Phasenwechsel Speicherelement mit solchem Widerstandselement, und Verfahren zu seiner Herstellung Expired - Lifetime DE60220245D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02425013A EP1331675B1 (de) 2002-01-17 2002-01-17 Integriertes Widerstandselement, Phasenwechsel Speicherelement mit solchem Widerstandselement, und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
DE60220245D1 true DE60220245D1 (de) 2007-07-05

Family

ID=8185827

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60220245T Expired - Lifetime DE60220245D1 (de) 2002-01-17 2002-01-17 Integriertes Widerstandselement, Phasenwechsel Speicherelement mit solchem Widerstandselement, und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (2) US6946673B2 (de)
EP (1) EP1331675B1 (de)
DE (1) DE60220245D1 (de)

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US7115138B2 (en) * 2002-09-04 2006-10-03 Boston Scientific Scimed, Inc. Sheath tip
US7307267B2 (en) 2002-12-19 2007-12-11 Nxp B.V. Electric device with phase change material and parallel heater
US20040251988A1 (en) * 2003-06-16 2004-12-16 Manish Sharma Adjustable phase change material resistor
US7009694B2 (en) * 2004-05-28 2006-03-07 International Business Machines Corporation Indirect switching and sensing of phase change memory cells
TW200633193A (en) 2004-12-02 2006-09-16 Koninkl Philips Electronics Nv Non-volatile memory
EP1677371A1 (de) 2004-12-30 2006-07-05 STMicroelectronics S.r.l. Zweiteiliger Widerstandsheizer für Phasenwechselspeicher und Herstellungsmethode
DE102005001460B4 (de) * 2005-01-12 2010-01-14 Qimonda Ag Speichervorrichtung und Herstellungsverfahren
JP2006210718A (ja) * 2005-01-28 2006-08-10 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US7973384B2 (en) * 2005-11-02 2011-07-05 Qimonda Ag Phase change memory cell including multiple phase change material portions
JP2008053494A (ja) * 2006-08-25 2008-03-06 Elpida Memory Inc 半導体装置及びその製造方法
US8003972B2 (en) * 2006-08-30 2011-08-23 Micron Technology, Inc. Bottom electrode geometry for phase change memory
US7511984B2 (en) 2006-08-30 2009-03-31 Micron Technology, Inc. Phase change memory
KR100873890B1 (ko) 2006-11-17 2008-12-15 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법 및 이를 포함하는상변화 메모리 장치 및 그 제조 방법
TWI346382B (en) * 2007-03-30 2011-08-01 Nanya Technology Corp Phase change memory devices and fabrication methods thereof
CN101330126B (zh) * 2007-06-19 2010-12-01 财团法人工业技术研究院 相变化存储单元结构及其制造方法
KR100881055B1 (ko) 2007-06-20 2009-01-30 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
US8563366B2 (en) 2012-02-28 2013-10-22 Intermolecular Inc. Memory device having an integrated two-terminal current limiting resistor
US8975727B2 (en) 2012-02-28 2015-03-10 Intermolecular, Inc. Memory cell having an integrated two-terminal current limiting resistor
US9178152B2 (en) 2013-12-23 2015-11-03 Intermolecular, Inc. Metal organic chemical vapor deposition of embedded resistors for ReRAM cells
US9269902B2 (en) 2013-12-26 2016-02-23 Intermolecular, Inc. Embedded resistors for resistive random access memory cells
US9425390B2 (en) 2014-10-16 2016-08-23 Micron Technology, Inc. Select device for memory cell applications
US10192822B2 (en) * 2015-02-16 2019-01-29 Globalfoundries Inc. Modified tungsten silicon
WO2018056963A1 (en) * 2016-09-21 2018-03-29 Intel Corporation Conductive bridge random access memory (cbram) devices with graded conductivity electrolyte layer
WO2018063320A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Conductive bridge random access memory (cbram) devices with low thermal conductivity electrolyte sublayer

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US3271591A (en) 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US4181913A (en) 1977-05-31 1980-01-01 Xerox Corporation Resistive electrode amorphous semiconductor negative resistance device
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5714768A (en) * 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
US5687112A (en) * 1996-04-19 1997-11-11 Energy Conversion Devices, Inc. Multibit single cell memory element having tapered contact
US6121127A (en) 1996-06-14 2000-09-19 Toyoda Gosei Co., Ltd. Methods and devices related to electrodes for p-type group III nitride compound semiconductors
US5933365A (en) 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
JP3488597B2 (ja) 1997-07-14 2004-01-19 株式会社東芝 窒化ガリウム系化合物半導体装置
US6617192B1 (en) * 1997-10-01 2003-09-09 Ovonyx, Inc. Electrically programmable memory element with multi-regioned contact
US6780758B1 (en) * 1998-09-03 2004-08-24 Micron Technology, Inc. Method of establishing electrical contact between a semiconductor substrate and a semiconductor device
WO2002009206A1 (en) * 2000-07-22 2002-01-31 Ovonyx, Inc. Electrically programmable memory element
US6555860B2 (en) * 2000-09-29 2003-04-29 Intel Corporation Compositionally modified resistive electrode
CN100493267C (zh) * 2000-11-29 2009-05-27 萨莫希雷梅克斯公司 具有控制电阻率的电阻加热器及其制备方法
US6545339B2 (en) * 2001-01-12 2003-04-08 International Business Machines Corporation Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
US7049623B2 (en) * 2002-12-13 2006-05-23 Ovonyx, Inc. Vertical elevated pore phase change memory
US6791102B2 (en) * 2002-12-13 2004-09-14 Intel Corporation Phase change memory

Also Published As

Publication number Publication date
EP1331675B1 (de) 2007-05-23
US20050269667A1 (en) 2005-12-08
EP1331675A1 (de) 2003-07-30
US20030161195A1 (en) 2003-08-28
EP1331675A9 (de) 2004-01-28
US6946673B2 (en) 2005-09-20

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