DE60220590D1 - Verfahren zur Reduzierung von Kopplungseffekten zwischen multi-level Speicherelementen eines nicht flüchtigen Speichers - Google Patents

Verfahren zur Reduzierung von Kopplungseffekten zwischen multi-level Speicherelementen eines nicht flüchtigen Speichers

Info

Publication number
DE60220590D1
DE60220590D1 DE60220590T DE60220590T DE60220590D1 DE 60220590 D1 DE60220590 D1 DE 60220590D1 DE 60220590 T DE60220590 T DE 60220590T DE 60220590 T DE60220590 T DE 60220590T DE 60220590 D1 DE60220590 D1 DE 60220590D1
Authority
DE
Germany
Prior art keywords
memory
states
programming
volatile memory
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60220590T
Other languages
English (en)
Other versions
DE60220590T2 (de
Inventor
Jian Chen
Tomoharu Tanaka
Yupin Fong
Khandker N Quader
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
SanDisk Corp
Original Assignee
Toshiba Corp
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, SanDisk Corp filed Critical Toshiba Corp
Publication of DE60220590D1 publication Critical patent/DE60220590D1/de
Application granted granted Critical
Publication of DE60220590T2 publication Critical patent/DE60220590T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
DE60220590T 2001-06-27 2002-06-26 Verfahren zur Reduzierung von Kopplungseffekten zwischen multi-level Speicherelementen eines nicht flüchtigen Speichers Expired - Lifetime DE60220590T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/893,277 US6522580B2 (en) 2001-06-27 2001-06-27 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US893277 2001-06-27

Publications (2)

Publication Number Publication Date
DE60220590D1 true DE60220590D1 (de) 2007-07-26
DE60220590T2 DE60220590T2 (de) 2008-02-14

Family

ID=25401316

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60220590T Expired - Lifetime DE60220590T2 (de) 2001-06-27 2002-06-26 Verfahren zur Reduzierung von Kopplungseffekten zwischen multi-level Speicherelementen eines nicht flüchtigen Speichers

Country Status (8)

Country Link
US (4) US6522580B2 (de)
EP (2) EP1271553B1 (de)
JP (1) JP4221196B2 (de)
KR (1) KR100926950B1 (de)
CN (2) CN100350503C (de)
AT (1) ATE364885T1 (de)
DE (1) DE60220590T2 (de)
TW (1) TW583672B (de)

Families Citing this family (702)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US7149110B2 (en) * 1999-01-14 2006-12-12 Silicon Storage Technology, Inc. Seek window verify program system and method for a multilevel non-volatile memory integrated circuit system
KR100544175B1 (ko) * 1999-05-08 2006-01-23 삼성전자주식회사 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법
USRE40110E1 (en) * 1999-09-20 2008-02-26 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device for storing multivalued data
JP3631463B2 (ja) 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
US6584017B2 (en) * 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
JP4907011B2 (ja) * 2001-04-27 2012-03-28 株式会社半導体エネルギー研究所 不揮発性メモリとその駆動方法、及び半導体装置
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6762092B2 (en) * 2001-08-08 2004-07-13 Sandisk Corporation Scalable self-aligned dual floating gate memory cell array and methods of forming the array
US6985388B2 (en) * 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7170802B2 (en) * 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US7554842B2 (en) * 2001-09-17 2009-06-30 Sandisk Corporation Multi-purpose non-volatile memory card
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
JP2003134414A (ja) * 2001-10-22 2003-05-09 Pioneer Electronic Corp 映像処理装置及び映像処理方法並びに映像処理用プログラム
US6967872B2 (en) * 2001-12-18 2005-11-22 Sandisk Corporation Method and system for programming and inhibiting multi-level, non-volatile memory cells
JP3977799B2 (ja) * 2003-12-09 2007-09-19 株式会社東芝 不揮発性半導体記憶装置
US7301806B2 (en) * 2001-12-27 2007-11-27 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
EP1324342B1 (de) * 2001-12-28 2008-07-16 STMicroelectronics S.r.l. Programmierverfahren für eine Multibitspeicherzelle
US6542407B1 (en) * 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
US6894930B2 (en) * 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
EP1514309B1 (de) * 2002-06-19 2013-11-27 SanDisk Technologies Inc. Tiefer wortleitunsggraben zur abschirmung der kreuzkopplung zwischen benachbarten zellen eines nand-speichers
US6894931B2 (en) * 2002-06-20 2005-05-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US6781877B2 (en) * 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US7039788B1 (en) 2002-10-28 2006-05-02 Sandisk Corporation Method and apparatus for splitting a logical block
US7254668B1 (en) * 2002-10-28 2007-08-07 Sandisk Corporation Method and apparatus for grouping pages within a block
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US7073103B2 (en) * 2002-12-05 2006-07-04 Sandisk Corporation Smart verify for multi-state memories
US6829167B2 (en) * 2002-12-12 2004-12-07 Sandisk Corporation Error recovery for nonvolatile memory
US6944063B2 (en) 2003-01-28 2005-09-13 Sandisk Corporation Non-volatile semiconductor memory with large erase blocks storing cycle counts
US6859397B2 (en) * 2003-03-05 2005-02-22 Sandisk Corporation Source side self boosting technique for non-volatile memory
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
US6914823B2 (en) * 2003-07-29 2005-07-05 Sandisk Corporation Detecting over programmed memory after further programming
US6917542B2 (en) * 2003-07-29 2005-07-12 Sandisk Corporation Detecting over programmed memory
US6933557B2 (en) * 2003-08-11 2005-08-23 Atmel Corporation Fowler-Nordheim block alterable EEPROM memory cell
US7046555B2 (en) 2003-09-17 2006-05-16 Sandisk Corporation Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
US6958936B2 (en) * 2003-09-25 2005-10-25 Sandisk Corporation Erase inhibit in non-volatile memories
US7188228B1 (en) * 2003-10-01 2007-03-06 Sandisk Corporation Hybrid mapping implementation within a non-volatile memory system
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
JP2005116132A (ja) * 2003-10-10 2005-04-28 Toshiba Corp 不揮発性半導体記憶装置
US7177199B2 (en) * 2003-10-20 2007-02-13 Sandisk Corporation Behavior based programming of non-volatile memory
US7183724B2 (en) * 2003-12-16 2007-02-27 Microsemi Corporation Inverter with two switching stages for driving lamp
US8504798B2 (en) * 2003-12-30 2013-08-06 Sandisk Technologies Inc. Management of non-volatile memory systems having large erase blocks
US7139864B2 (en) * 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US7631138B2 (en) * 2003-12-30 2009-12-08 Sandisk Corporation Adaptive mode switching of flash memory address mapping based on host usage characteristics
US7433993B2 (en) * 2003-12-30 2008-10-07 San Disk Corportion Adaptive metablocks
US7383375B2 (en) 2003-12-30 2008-06-03 Sandisk Corporation Data run programming
US7173863B2 (en) * 2004-03-08 2007-02-06 Sandisk Corporation Flash controller cache architecture
US20050144363A1 (en) * 2003-12-30 2005-06-30 Sinclair Alan W. Data boundary management
US7594135B2 (en) * 2003-12-31 2009-09-22 Sandisk Corporation Flash memory system startup operation
US6888758B1 (en) * 2004-01-21 2005-05-03 Sandisk Corporation Programming non-volatile memory
US7154779B2 (en) * 2004-01-21 2006-12-26 Sandisk Corporation Non-volatile memory cell using high-k material inter-gate programming
US7372730B2 (en) * 2004-01-26 2008-05-13 Sandisk Corporation Method of reading NAND memory to compensate for coupling between storage elements
US7068539B2 (en) * 2004-01-27 2006-06-27 Sandisk Corporation Charge packet metering for coarse/fine programming of non-volatile memory
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
US7002843B2 (en) * 2004-01-27 2006-02-21 Sandisk Corporation Variable current sinking for coarse/fine programming of non-volatile memory
JP4170952B2 (ja) 2004-01-30 2008-10-22 株式会社東芝 半導体記憶装置
JP2008176924A (ja) * 2004-01-30 2008-07-31 Toshiba Corp 半導体記憶装置
US7161833B2 (en) 2004-02-06 2007-01-09 Sandisk Corporation Self-boosting system for flash memory cells
US7466590B2 (en) 2004-02-06 2008-12-16 Sandisk Corporation Self-boosting method for flash memory cells
US7355237B2 (en) * 2004-02-13 2008-04-08 Sandisk Corporation Shield plate for limiting cross coupling between floating gates
US8019928B2 (en) * 2004-02-15 2011-09-13 Sandisk Il Ltd. Method of managing a multi-bit-cell flash memory
US7716413B2 (en) * 2004-02-15 2010-05-11 Sandisk Il Ltd. Method of making a multi-bit-cell flash memory
JP2005235287A (ja) * 2004-02-19 2005-09-02 Nec Electronics Corp 不揮発性半導体記憶装置のプログラミング方法、プログラミング装置、及び、不揮発性半導体記憶装置
US20050213393A1 (en) * 2004-03-14 2005-09-29 M-Systems Flash Disk Pioneers, Ltd. States encoding in multi-bit flash cells for optimizing error rate
US7310347B2 (en) * 2004-03-14 2007-12-18 Sandisk, Il Ltd. States encoding in multi-bit flash cells
JP4427361B2 (ja) * 2004-03-16 2010-03-03 株式会社東芝 不揮発性半導体メモリ
US7177977B2 (en) * 2004-03-19 2007-02-13 Sandisk Corporation Operating non-volatile memory without read disturb limitations
KR100847587B1 (ko) * 2004-04-06 2008-07-22 샌디스크 코포레이션 비휘발성 메모리의 가변 프로그래밍
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory
US7057939B2 (en) 2004-04-23 2006-06-06 Sandisk Corporation Non-volatile memory and control with improved partial page program capability
US7020026B2 (en) * 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
US8429313B2 (en) * 2004-05-27 2013-04-23 Sandisk Technologies Inc. Configurable ready/busy control
US7274596B2 (en) * 2004-06-30 2007-09-25 Micron Technology, Inc. Reduction of adjacent floating gate data pattern sensitivity
US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control
US8607016B2 (en) * 2004-07-21 2013-12-10 Sandisk Technologies Inc. FAT analysis for optimized sequential cluster management
US8375146B2 (en) * 2004-08-09 2013-02-12 SanDisk Technologies, Inc. Ring bus structure and its use in flash memory systems
US7294882B2 (en) * 2004-09-28 2007-11-13 Sandisk Corporation Non-volatile memory with asymmetrical doping profile
US20060067127A1 (en) * 2004-09-30 2006-03-30 Matrix Semiconductor, Inc. Method of programming a monolithic three-dimensional memory
US8179711B2 (en) * 2004-10-26 2012-05-15 Samsung Electronics Co., Ltd. Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell
KR100645055B1 (ko) * 2004-10-28 2006-11-10 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
US7493457B2 (en) * 2004-11-08 2009-02-17 Sandisk Il. Ltd States encoding in multi-bit flash cells for optimizing error rate
US7441067B2 (en) 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7173859B2 (en) * 2004-11-16 2007-02-06 Sandisk Corporation Faster programming of higher level states in multi-level cell flash memory
US7092290B2 (en) * 2004-11-16 2006-08-15 Sandisk Corporation High speed programming system with reduced over programming
US7386655B2 (en) 2004-12-16 2008-06-10 Sandisk Corporation Non-volatile memory and method with improved indexing for scratch pad and update blocks
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7395404B2 (en) 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
US7366826B2 (en) * 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7149111B2 (en) * 2004-12-17 2006-12-12 Msystems Ltd. Method of handling limitations on the order of writing to a non-volatile memory
US7882299B2 (en) * 2004-12-21 2011-02-01 Sandisk Corporation System and method for use of on-chip non-volatile memory write cache
US7437653B2 (en) 2004-12-22 2008-10-14 Sandisk Corporation Erased sector detection mechanisms
US6980471B1 (en) * 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells
US7230851B2 (en) * 2004-12-23 2007-06-12 Sandisk Corporation Reducing floating gate to floating gate coupling effect
US7369438B2 (en) * 2004-12-28 2008-05-06 Aplus Flash Technology, Inc. Combo memory design and technology for multiple-function java card, sim-card, bio-passport and bio-id card applications
US7450433B2 (en) 2004-12-29 2008-11-11 Sandisk Corporation Word line compensation in non-volatile memory erase operations
KR100729351B1 (ko) * 2004-12-31 2007-06-15 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
US7308525B2 (en) * 2005-01-10 2007-12-11 Sandisk Il Ltd. Method of managing a multi-bit cell flash memory with improved reliablility and performance
US7315917B2 (en) * 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
US20060184719A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct data file storage implementation techniques in flash memories
EP1688959B1 (de) * 2005-02-04 2013-04-24 Micron Technology, Inc. Programmierverfahren für Speicheranordnung zur Minimierung der lateralen Kopplungseffekten zwischen Speicherzellen
US9104315B2 (en) * 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
US7877539B2 (en) * 2005-02-16 2011-01-25 Sandisk Corporation Direct data file storage in flash memories
US20060184718A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct file data programming and deletion in flash memories
US7212436B2 (en) * 2005-02-28 2007-05-01 Micron Technology, Inc. Multiple level programming in a non-volatile memory device
US8000502B2 (en) 2005-03-09 2011-08-16 Sandisk Technologies Inc. Portable memory storage device with biometric identification security
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
JP2006302345A (ja) * 2005-04-15 2006-11-02 Sony Corp データ処理装置、データ再生装置、データ処理方法及びプログラム
ITMI20050798A1 (it) * 2005-05-03 2006-11-04 Atmel Corp Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili
WO2006119327A2 (en) * 2005-05-03 2006-11-09 Atmel Corporation Method and system for program pulse generation during programming of nonvolatile electronic devices
US7275140B2 (en) * 2005-05-12 2007-09-25 Sandisk Il Ltd. Flash memory management method that is resistant to data corruption by power loss
US7339834B2 (en) 2005-06-03 2008-03-04 Sandisk Corporation Starting program voltage shift with cycling of non-volatile memory
KR100719368B1 (ko) * 2005-06-27 2007-05-17 삼성전자주식회사 플래시 메모리 장치의 적응적 프로그램 방법 및 장치
US7457910B2 (en) * 2005-06-29 2008-11-25 Sandisk Corproation Method and system for managing partitions in a storage device
DE602005012625D1 (de) * 2005-07-22 2009-03-19 Hynix Semiconductor Inc Verfahren zum Zugreifen auf eine nichtflüchtige Mehrpegelspeichervorrichtung vom Typ FLASH NAND
US7230854B2 (en) * 2005-08-01 2007-06-12 Sandisk Corporation Method for programming non-volatile memory with self-adjusting maximum program loop
US7023737B1 (en) * 2005-08-01 2006-04-04 Sandisk Corporation System for programming non-volatile memory with self-adjusting maximum program loop
US7984084B2 (en) * 2005-08-03 2011-07-19 SanDisk Technologies, Inc. Non-volatile memory with scheduled reclaim operations
US7480766B2 (en) * 2005-08-03 2009-01-20 Sandisk Corporation Interfacing systems operating through a logical address space and on a direct data file basis
US7558906B2 (en) 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
US7552271B2 (en) 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
US7669003B2 (en) * 2005-08-03 2010-02-23 Sandisk Corporation Reprogrammable non-volatile memory systems with indexing of directly stored data files
US7949845B2 (en) * 2005-08-03 2011-05-24 Sandisk Corporation Indexing of file data in reprogrammable non-volatile memories that directly store data files
US7627733B2 (en) * 2005-08-03 2009-12-01 Sandisk Corporation Method and system for dual mode access for storage devices
US20070036007A1 (en) * 2005-08-09 2007-02-15 Saifun Semiconductors, Ltd. Sticky bit buffer
US7218552B1 (en) 2005-09-09 2007-05-15 Sandisk Corporation Last-first mode and method for programming of non-volatile memory with reduced program disturb
US7170788B1 (en) 2005-09-09 2007-01-30 Sandisk Corporation Last-first mode and apparatus for programming of non-volatile memory with reduced program disturb
KR100705220B1 (ko) * 2005-09-15 2007-04-06 주식회사 하이닉스반도체 프로그램 속도를 증가시키기 위한 플래시 메모리 장치의소거 및 프로그램 방법
US7814262B2 (en) * 2005-10-13 2010-10-12 Sandisk Corporation Memory system storing transformed units of data in fixed sized storage blocks
US7529905B2 (en) * 2005-10-13 2009-05-05 Sandisk Corporation Method of storing transformed units of data in a memory system having fixed sized storage blocks
US7681109B2 (en) * 2005-10-13 2010-03-16 Ramot At Tel Aviv University Ltd. Method of error correction in MBC flash memory
US7286406B2 (en) * 2005-10-14 2007-10-23 Sandisk Corporation Method for controlled programming of non-volatile memory exhibiting bit line coupling
US7206235B1 (en) 2005-10-14 2007-04-17 Sandisk Corporation Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
US7526715B2 (en) * 2005-10-17 2009-04-28 Ramot At Tel Aviv University Ltd. Probabilistic error correction in multi-bit-per-cell flash memory
US7954037B2 (en) * 2005-10-25 2011-05-31 Sandisk Il Ltd Method for recovering from errors in flash memory
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
JP4855474B2 (ja) * 2005-10-27 2012-01-18 サンディスク コーポレイション スマート検証を利用してマルチステート不揮発性メモリをプログラミングする方法
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
US7447066B2 (en) * 2005-11-08 2008-11-04 Sandisk Corporation Memory with retargetable memory cell redundancy
US8683081B2 (en) * 2005-11-14 2014-03-25 Sandisk Technologies Inc. Methods for displaying advertisement content on host system using application launched from removable memory device
US8683082B2 (en) * 2005-11-14 2014-03-25 Sandisk Technologies Inc. Removable memory devices for displaying advertisement content on host systems using applications launched from removable memory devices
US7739078B2 (en) * 2005-12-01 2010-06-15 Sandisk Corporation System for managing appliances
US7353073B2 (en) * 2005-12-01 2008-04-01 Sandisk Corporation Method for managing appliances
US7615448B2 (en) * 2005-12-06 2009-11-10 Sandisk Corporation Method of forming low resistance void-free contacts
WO2007067447A1 (en) 2005-12-06 2007-06-14 Sandisk Corporation Reducing read disturb for non-volatile storage
US7349258B2 (en) * 2005-12-06 2008-03-25 Sandisk Corporation Reducing read disturb for non-volatile storage
US7737483B2 (en) * 2005-12-06 2010-06-15 Sandisk Corporation Low resistance void-free contacts
US7262994B2 (en) * 2005-12-06 2007-08-28 Sandisk Corporation System for reducing read disturb for non-volatile storage
US7877540B2 (en) * 2005-12-13 2011-01-25 Sandisk Corporation Logically-addressed file storage methods
US7355889B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Method for programming non-volatile memory with reduced program disturb using modified pass voltages
US7355888B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
US20070143567A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for data alignment in non-volatile memories with a directly mapped file storage system
US20070143561A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system
US7917949B2 (en) * 2005-12-21 2011-03-29 Sandisk Corporation Voice controlled portable memory storage device
US20070156998A1 (en) * 2005-12-21 2007-07-05 Gorobets Sergey A Methods for memory allocation in non-volatile memories with a directly mapped file storage system
US7747837B2 (en) 2005-12-21 2010-06-29 Sandisk Corporation Method and system for accessing non-volatile storage devices
US20070143117A1 (en) * 2005-12-21 2007-06-21 Conley Kevin M Voice controlled portable memory storage device
US7495294B2 (en) * 2005-12-21 2009-02-24 Sandisk Corporation Flash devices with shared word lines
US7769978B2 (en) * 2005-12-21 2010-08-03 Sandisk Corporation Method and system for accessing non-volatile storage devices
US20070143566A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with data alignment in a directly mapped file storage system
US7793068B2 (en) * 2005-12-21 2010-09-07 Sandisk Corporation Dual mode access for non-volatile storage devices
US7655536B2 (en) * 2005-12-21 2010-02-02 Sandisk Corporation Methods of forming flash devices with shared word lines
US20070143378A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with adaptive file handling in a directly mapped file storage system
US20070143111A1 (en) * 2005-12-21 2007-06-21 Conley Kevin M Voice controlled portable memory storage device
US8161289B2 (en) * 2005-12-21 2012-04-17 SanDisk Technologies, Inc. Voice controlled portable memory storage device
US8479186B2 (en) * 2005-12-22 2013-07-02 Sandisk Technologies Inc. Method for program code execution with memory storage controller participation
US8484632B2 (en) * 2005-12-22 2013-07-09 Sandisk Technologies Inc. System for program code execution with memory storage controller participation
US7436703B2 (en) * 2005-12-27 2008-10-14 Sandisk Corporation Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
EP1974383B1 (de) 2005-12-27 2016-10-19 SanDisk Technologies LLC Verfahren zum Auslesen einer Flash-Speicheranordnung mit einer Booster-Plate
US7362615B2 (en) * 2005-12-27 2008-04-22 Sandisk Corporation Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
US7365018B2 (en) * 2005-12-28 2008-04-29 Sandisk Corporation Fabrication of semiconductor device for flash memory with increased select gate width
US7352629B2 (en) * 2005-12-29 2008-04-01 Sandisk Corporation Systems for continued verification in non-volatile memory write operations
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
US7307887B2 (en) * 2005-12-29 2007-12-11 Sandisk Corporation Continued verification in non-volatile memory write operations
US7349260B2 (en) * 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
TW200727303A (en) * 2006-01-08 2007-07-16 Ememory Technology Inc A method and memory capable of improving the endurance of memory
KR100683858B1 (ko) * 2006-01-12 2007-02-15 삼성전자주식회사 고온 스트레스로 인한 읽기 마진의 감소를 보상할 수 있는플래시 메모리의 프로그램 방법
KR100841336B1 (ko) * 2006-01-24 2008-06-26 삼성전자주식회사 고온 스트레스로 인한 읽기 마진의 감소를 보상할 수 있는플래시 메모리를 구비한 메모리 시스템
KR100684909B1 (ko) * 2006-01-24 2007-02-22 삼성전자주식회사 읽기 에러를 방지할 수 있는 플래시 메모리 장치
KR100673026B1 (ko) * 2006-01-24 2007-01-24 삼성전자주식회사 고온 스트레스로 인한 읽기 마진의 감소를 보상할 수 있는플래시 메모리의 프로그램 방법
JP4157563B2 (ja) 2006-01-31 2008-10-01 株式会社東芝 半導体集積回路装置
KR100732631B1 (ko) * 2006-02-01 2007-06-27 삼성전자주식회사 전하 손실로 인해 감소된 읽기 마진을 보상할 수 있는플래시 메모리 장치의 프로그램 방법
KR100666223B1 (ko) * 2006-02-22 2007-01-09 삼성전자주식회사 메모리셀 사이의 커플링 노이즈를 저감시키는 3-레벨불휘발성 반도체 메모리 장치 및 이에 대한 구동방법
WO2007103038A1 (en) 2006-03-03 2007-09-13 Sandisk Corporation Read operation for non-volatile storage with compensation for floating gate coupling
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US7388781B2 (en) * 2006-03-06 2008-06-17 Sandisk Il Ltd. Multi-bit-per-cell flash memory device with non-bijective mapping
US8848442B2 (en) * 2006-03-06 2014-09-30 Sandisk Il Ltd. Multi-bit-per-cell flash memory device with non-bijective mapping
US7327608B2 (en) * 2006-03-28 2008-02-05 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in programming method
US7330373B2 (en) * 2006-03-28 2008-02-12 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in memory system
US7511995B2 (en) 2006-03-30 2009-03-31 Sandisk Corporation Self-boosting system with suppression of high lateral electric fields
US7428165B2 (en) * 2006-03-30 2008-09-23 Sandisk Corporation Self-boosting method with suppression of high lateral electric fields
DE602006013935D1 (de) * 2006-03-31 2010-06-10 St Microelectronics Srl Verfahren zum Programmieren einer Speicheranordnung dafür geeignet die Kopplungen der schwebeneden Gatter zu minimieren und eine Speicheranordnung
EP2315212A1 (de) 2006-04-12 2011-04-27 Sandisk Corporation Minderung der Auswirkung von Programmstörungen während des Lesens
US7499326B2 (en) 2006-04-12 2009-03-03 Sandisk Corporation Apparatus for reducing the impact of program disturb
US7515463B2 (en) 2006-04-12 2009-04-07 Sandisk Corporation Reducing the impact of program disturb during read
US7436713B2 (en) 2006-04-12 2008-10-14 Sandisk Corporation Reducing the impact of program disturb
US7426137B2 (en) 2006-04-12 2008-09-16 Sandisk Corporation Apparatus for reducing the impact of program disturb during read
US7451264B2 (en) * 2006-04-13 2008-11-11 Sandisk Corporation Cycle count storage methods
US7467253B2 (en) * 2006-04-13 2008-12-16 Sandisk Corporation Cycle count storage systems
US7440322B2 (en) * 2006-04-20 2008-10-21 Sandisk Corporation Method and system for flash memory devices
US7516261B2 (en) * 2006-04-21 2009-04-07 Sandisk Corporation Method for U3 adapter
US7447821B2 (en) * 2006-04-21 2008-11-04 Sandisk Corporation U3 adapter
US7701779B2 (en) * 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7436709B2 (en) * 2006-05-05 2008-10-14 Sandisk Corporation NAND flash memory with boosting
US7286408B1 (en) 2006-05-05 2007-10-23 Sandisk Corporation Boosting methods for NAND flash memory
WO2007132456A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
WO2007132452A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
WO2007132457A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
CN103258572B (zh) 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
US20070266296A1 (en) * 2006-05-15 2007-11-15 Conley Kevin M Nonvolatile Memory with Convolutional Coding
US7840875B2 (en) * 2006-05-15 2010-11-23 Sandisk Corporation Convolutional coding methods for nonvolatile memory
KR100778082B1 (ko) * 2006-05-18 2007-11-21 삼성전자주식회사 단일의 래치 구조를 갖는 멀티-비트 플래시 메모리 장치,그것의 프로그램 방법, 그리고 그것을 포함하는 메모리카드
US7876613B2 (en) 2006-05-18 2011-01-25 Samsung Electronics Co., Ltd. Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards
US7583545B2 (en) * 2006-05-21 2009-09-01 Sandisk Il Ltd Method of storing data in a multi-bit-cell flash memory
US7457163B2 (en) * 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7870736B2 (en) * 2006-06-01 2011-01-18 Virginia Tech Intellectual Properties, Inc. Premixing injector for gas turbine engines
US7440331B2 (en) * 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7450421B2 (en) * 2006-06-02 2008-11-11 Sandisk Corporation Data pattern sensitivity compensation using different voltage
US7952922B2 (en) * 2006-06-06 2011-05-31 Micron Technology, Inc. Method for programming a non-volatile memory device to reduce floating-gate-to-floating-gate coupling effect
KR100733952B1 (ko) 2006-06-12 2007-06-29 삼성전자주식회사 플래그 셀들 사이의 커플링을 최소화시킬 수 있는멀티-비트 플래시 메모리 장치 및 그것의 프로그램 방법
US7372715B2 (en) * 2006-06-14 2008-05-13 Micron Technology, Inc. Architecture and method for NAND flash memory
US7391650B2 (en) * 2006-06-16 2008-06-24 Sandisk Corporation Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7342831B2 (en) * 2006-06-16 2008-03-11 Sandisk Corporation System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7349261B2 (en) * 2006-06-19 2008-03-25 Sandisk Corporation Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7492633B2 (en) * 2006-06-19 2009-02-17 Sandisk Corporation System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7486561B2 (en) * 2006-06-22 2009-02-03 Sandisk Corporation Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
KR101075253B1 (ko) * 2006-06-22 2011-10-20 샌디스크 코포레이션 임계 전압의 치밀한 분포가 가능한 비휘발성 메모리의 비 실시간 재 프로그래밍 방법
US7489549B2 (en) * 2006-06-22 2009-02-10 Sandisk Corporation System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US20070297247A1 (en) * 2006-06-26 2007-12-27 Gerrit Jan Hemink Method for programming non-volatile memory using variable amplitude programming pulses
US7355892B2 (en) * 2006-06-30 2008-04-08 Sandisk Corporation Partial page fail bit detection in flash memory devices
US7304893B1 (en) 2006-06-30 2007-12-04 Sandisk Corporation Method of partial page fail bit detection in flash memory devices
US7533328B2 (en) * 2006-07-04 2009-05-12 Sandisk Il, Ltd. Method of error correction in a multi-bit-per-cell flash memory
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
US7443729B2 (en) * 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
WO2008011441A2 (en) * 2006-07-20 2008-01-24 Sandisk Corporation Method for configuring compensation for coupling between adjacent storage elements in a nonvolatile memory
US7885119B2 (en) * 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
ATE472803T1 (de) * 2006-07-20 2010-07-15 Sandisk Corp Floating-gate-speicher mit kopplungskompensation während der programmierung
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
US7894269B2 (en) * 2006-07-20 2011-02-22 Sandisk Corporation Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US7716415B2 (en) * 2006-08-01 2010-05-11 Sandisk Il Ltd. Method of avoiding errors in flash memory
MX2009001345A (es) 2006-08-05 2009-07-17 Benhov Gmbh Llc Elemento y metodo de almacenamiento de estado solido.
US7474560B2 (en) 2006-08-21 2009-01-06 Micron Technology, Inc. Non-volatile memory with both single and multiple level cells
KR100919156B1 (ko) * 2006-08-24 2009-09-28 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 방법
JP2008052808A (ja) 2006-08-24 2008-03-06 Toshiba Corp 不揮発性半導体記憶装置及びそのデータの読出方法並びにメモリカード
US8060806B2 (en) * 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
KR100805839B1 (ko) 2006-08-29 2008-02-21 삼성전자주식회사 고전압 발생기를 공유하는 플래시 메모리 장치
US7684243B2 (en) 2006-08-31 2010-03-23 Micron Technology, Inc. Reducing read failure in a memory device
KR100771883B1 (ko) 2006-09-06 2007-11-01 삼성전자주식회사 멀티-레벨 불휘발성 메모리 장치 및 프로그램 방법
US7440326B2 (en) * 2006-09-06 2008-10-21 Sandisk Corporation Programming non-volatile memory with improved boosting
KR100753156B1 (ko) * 2006-09-13 2007-08-30 삼성전자주식회사 플래시 메모리 장치 및 그것의 메모리 셀 어레이
US7593259B2 (en) * 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
US7696044B2 (en) * 2006-09-19 2010-04-13 Sandisk Corporation Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7646054B2 (en) * 2006-09-19 2010-01-12 Sandisk Corporation Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
KR100879387B1 (ko) * 2006-09-22 2009-01-20 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US8184478B2 (en) * 2006-09-27 2012-05-22 Sandisk Technologies Inc. Apparatus with reduced program disturb in non-volatile storage
US8189378B2 (en) * 2006-09-27 2012-05-29 Sandisk Technologies Inc. Reducing program disturb in non-volatile storage
US8773934B2 (en) 2006-09-27 2014-07-08 Silicon Storage Technology, Inc. Power line compensation for flash memory sense amplifiers
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7705387B2 (en) * 2006-09-28 2010-04-27 Sandisk Corporation Non-volatile memory with local boosting control implant
US7977186B2 (en) * 2006-09-28 2011-07-12 Sandisk Corporation Providing local boosting control implant for non-volatile memory
US7904783B2 (en) * 2006-09-28 2011-03-08 Sandisk Corporation Soft-input soft-output decoder for nonvolatile memory
US20080092015A1 (en) * 2006-09-28 2008-04-17 Yigal Brandman Nonvolatile memory with adaptive operation
US7805663B2 (en) * 2006-09-28 2010-09-28 Sandisk Corporation Methods of adapting operation of nonvolatile memory
US7818653B2 (en) * 2006-09-28 2010-10-19 Sandisk Corporation Methods of soft-input soft-output decoding for nonvolatile memory
US7656735B2 (en) 2006-09-29 2010-02-02 Sandisk Corporation Dual voltage flash memory methods
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7675802B2 (en) 2006-09-29 2010-03-09 Sandisk Corporation Dual voltage flash memory card
KR100773742B1 (ko) * 2006-09-30 2007-11-09 삼성전자주식회사 저장 소자들 사이의 커플링 효과를 감소시킬 수 있는비휘발성 메모리 장치와 그 방법
KR100782329B1 (ko) 2006-10-02 2007-12-06 삼성전자주식회사 메모리 셀 어레이에 분산 배열된 플래그 셀 어레이를구비하는 비휘발성 메모리 장치 및 상기 메모리 장치의구동 방법
US7474561B2 (en) * 2006-10-10 2009-01-06 Sandisk Corporation Variable program voltage increment values in non-volatile memory program operations
US7450426B2 (en) * 2006-10-10 2008-11-11 Sandisk Corporation Systems utilizing variable program voltage increment values in non-volatile memory program operations
WO2008045805A1 (en) * 2006-10-10 2008-04-17 Sandisk Corporation Variable program voltage increment values in non-volatile memory program operations
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
EP2057635B1 (de) 2006-10-13 2014-03-19 SanDisk Technologies Inc. Unterteilte löschung und löschüberprüfung in nicht flüchtigem speicher
US7372748B2 (en) * 2006-10-16 2008-05-13 Sandisk Corporation Voltage regulator in a non-volatile memory device
US7586157B2 (en) * 2006-10-17 2009-09-08 Sandisk Corporation Non-volatile memory with dual voltage select gate structure
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US7691710B2 (en) * 2006-10-17 2010-04-06 Sandisk Corporation Fabricating non-volatile memory with dual voltage select gate structure
US7596031B2 (en) * 2006-10-30 2009-09-29 Sandisk Corporation Faster programming of highest multi-level state for non-volatile memory
WO2008054986A2 (en) * 2006-10-30 2008-05-08 Sandisk Corporation Faster programming of highest multi-level state for non-volatile memory
CN101601094B (zh) * 2006-10-30 2013-03-27 苹果公司 使用多个门限读取存储单元的方法
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7426139B2 (en) * 2006-11-02 2008-09-16 Macronix International Co., Ltd. Dynamic program and read adjustment for multi-level cell memory array
US7468911B2 (en) * 2006-11-02 2008-12-23 Sandisk Corporation Non-volatile memory using multiple boosting modes for reduced program disturb
US7440323B2 (en) * 2006-11-02 2008-10-21 Sandisk Corporation Reducing program disturb in non-volatile memory using multiple boosting modes
US7558109B2 (en) * 2006-11-03 2009-07-07 Sandisk Corporation Nonvolatile memory with variable read threshold
US7904788B2 (en) * 2006-11-03 2011-03-08 Sandisk Corporation Methods of varying read threshold voltage in nonvolatile memory
US8001441B2 (en) * 2006-11-03 2011-08-16 Sandisk Technologies Inc. Nonvolatile memory with modulated error correction coding
US7904780B2 (en) * 2006-11-03 2011-03-08 Sandisk Corporation Methods of modulating error correction coding
US7696035B2 (en) * 2006-11-13 2010-04-13 Sandisk Corporation Method for fabricating non-volatile memory with boost structures
US7508710B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Operating non-volatile memory with boost structures
US7508703B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Non-volatile memory with boost structures
KR100851853B1 (ko) * 2006-11-22 2008-08-13 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 및 프로그램 검증방법
US7924648B2 (en) * 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7706182B2 (en) * 2006-12-03 2010-04-27 Anobit Technologies Ltd. Adaptive programming of analog memory cells using statistical characteristics
US7474565B2 (en) * 2006-12-11 2009-01-06 Macronix International Co., Ltd. Programming scheme for non-volatile flash memory
US7623387B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Non-volatile storage with early source-side boosting for reducing program disturb
US7623386B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Reducing program disturb in non-volatile storage using early source-side boosting
US8504890B2 (en) * 2006-12-17 2013-08-06 Ramot At Tel Aviv University Ltd. Scheduling for LDPC decoding
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7642160B2 (en) * 2006-12-21 2010-01-05 Sandisk Corporation Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches
US7800161B2 (en) * 2006-12-21 2010-09-21 Sandisk Corporation Flash NAND memory cell array with charge storage elements positioned in trenches
US8127200B2 (en) * 2006-12-24 2012-02-28 Sandisk Il Ltd. Flash memory device and system with randomizing for suppressing errors
US8370561B2 (en) * 2006-12-24 2013-02-05 Sandisk Il Ltd. Randomizing for suppressing errors in a flash memory
US8209461B2 (en) 2006-12-26 2012-06-26 Sandisk Technologies Inc. Configuration of host LBA interface with flash memory
US20080155175A1 (en) * 2006-12-26 2008-06-26 Sinclair Alan W Host System That Manages a LBA Interface With Flash Memory
US7917686B2 (en) * 2006-12-26 2011-03-29 Sandisk Corporation Host system with direct data file interface configurability
US8166267B2 (en) * 2006-12-26 2012-04-24 Sandisk Technologies Inc. Managing a LBA interface in a direct data file memory system
US7739444B2 (en) 2006-12-26 2010-06-15 Sandisk Corporation System using a direct data file system with a continuous logical address space interface
US8046522B2 (en) * 2006-12-26 2011-10-25 SanDisk Technologies, Inc. Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks
US7551482B2 (en) * 2006-12-27 2009-06-23 Sandisk Corporation Method for programming with initial programming voltage based on trial
US7570520B2 (en) * 2006-12-27 2009-08-04 Sandisk Corporation Non-volatile storage system with initial programming voltage based on trial
KR100816155B1 (ko) * 2006-12-28 2008-03-21 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 멀티레벨 셀 프로그램 방법
US7616505B2 (en) 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616506B2 (en) 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7539052B2 (en) * 2006-12-28 2009-05-26 Micron Technology, Inc. Non-volatile multilevel memory cell programming
US7701765B2 (en) * 2006-12-28 2010-04-20 Micron Technology, Inc. Non-volatile multilevel memory cell programming
US7489547B2 (en) * 2006-12-29 2009-02-10 Sandisk Corporation Method of NAND flash memory cell array with adaptive memory state partitioning
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
US7518923B2 (en) * 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US7433241B2 (en) * 2006-12-29 2008-10-07 Sandisk Corporation Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
US7463531B2 (en) * 2006-12-29 2008-12-09 Sandisk Corporation Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
US7468918B2 (en) * 2006-12-29 2008-12-23 Sandisk Corporation Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
US7890723B2 (en) * 2006-12-29 2011-02-15 Sandisk Corporation Method for code execution
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7450430B2 (en) * 2006-12-29 2008-11-11 Sandisk Corporation Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
US7489548B2 (en) * 2006-12-29 2009-02-10 Sandisk Corporation NAND flash memory cell array with adaptive memory state partitioning
US7890724B2 (en) * 2006-12-29 2011-02-15 Sandisk Corporation System for code execution
US7525843B2 (en) * 2006-12-30 2009-04-28 Sandisk Corporation Non-volatile storage with adaptive body bias
US7468919B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Biasing non-volatile storage based on selected word line
US7554853B2 (en) * 2006-12-30 2009-06-30 Sandisk Corporation Non-volatile storage with bias based on selective word line
US7468920B2 (en) 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7583539B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Non-volatile storage with bias for temperature compensation
US7583535B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Biasing non-volatile storage to compensate for temperature variations
KR100816161B1 (ko) * 2007-01-23 2008-03-21 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
US7751240B2 (en) * 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7660166B2 (en) * 2007-01-31 2010-02-09 Sandisk Il Ltd. Method of improving programming precision in flash memory
US7397705B1 (en) * 2007-02-01 2008-07-08 Macronix International Co., Ltd. Method for programming multi-level cell memory array
KR101163162B1 (ko) 2007-02-20 2012-07-06 샌디스크 테크놀로지스, 인코포레이티드 비휘발성 저장소자를 위한 가변 프로그램
US7616500B2 (en) * 2007-02-20 2009-11-10 Sandisk Corporation Non-volatile storage apparatus with multiple pass write sequence
CN101715595A (zh) 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
WO2008121553A1 (en) * 2007-03-29 2008-10-09 Sandisk Corporation Non-volatile storage with decoding of data using reliability metrics based on multiple reads
US7904793B2 (en) 2007-03-29 2011-03-08 Sandisk Corporation Method for decoding data in non-volatile storage using reliability metrics based on multiple reads
US7797480B2 (en) * 2007-03-29 2010-09-14 Sandisk Corporation Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics
US7745285B2 (en) 2007-03-30 2010-06-29 Sandisk Corporation Methods of forming and operating NAND memory with side-tunneling
US7606076B2 (en) * 2007-04-05 2009-10-20 Sandisk Corporation Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
US7532516B2 (en) * 2007-04-05 2009-05-12 Sandisk Corporation Non-volatile storage with current sensing of negative threshold voltages
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US7876621B2 (en) * 2007-04-23 2011-01-25 Sandisk Il Ltd. Adaptive dynamic reading of flash memories
US7606072B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop
US7606071B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Compensating source voltage drop in non-volatile storage
US7440327B1 (en) 2007-04-25 2008-10-21 Sandisk Corporation Non-volatile storage with reduced power consumption during read operations
US7606079B2 (en) * 2007-04-25 2009-10-20 Sandisk Corporation Reducing power consumption during read operations in non-volatile storage
US7656709B2 (en) * 2007-05-03 2010-02-02 Micron Technology, Inc. NAND step up voltage switching method
US7577029B2 (en) 2007-05-04 2009-08-18 Mosaid Technologies Incorporated Multi-level cell access buffer with dual function
US7577026B2 (en) * 2007-05-07 2009-08-18 Sandisk Corporation Source and drain side early boosting using local self boosting for non-volatile storage
US7463522B2 (en) * 2007-05-07 2008-12-09 Sandisk Corporation Non-volatile storage with boosting using channel isolation switching
US7460404B1 (en) * 2007-05-07 2008-12-02 Sandisk Corporation Boosting for non-volatile storage using channel isolation switching
KR100890016B1 (ko) 2007-05-10 2009-03-25 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템 및그것의 프로그램 방법
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
WO2008139441A2 (en) 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US8073648B2 (en) 2007-05-14 2011-12-06 Sandisk Il Ltd. Measuring threshold voltage distribution in memory using an aggregate characteristic
US20080294813A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Managing Housekeeping Operations in Flash Memory
US20080294814A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Flash Memory System with Management of Housekeeping Operations
US8239639B2 (en) * 2007-06-08 2012-08-07 Sandisk Technologies Inc. Method and apparatus for providing data type and host file information to a mass storage system
KR100892583B1 (ko) 2007-06-08 2009-04-08 삼성전자주식회사 커플링을 고려한 메모리 셀의 데이터 프로그램 장치 및 그방법
US8713283B2 (en) * 2007-06-08 2014-04-29 Sandisk Technologies Inc. Method of interfacing a host operating through a logical address space with a direct file storage medium
US20080307156A1 (en) * 2007-06-08 2008-12-11 Sinclair Alan W System For Interfacing A Host Operating Through A Logical Address Space With A Direct File Storage Medium
US8429352B2 (en) * 2007-06-08 2013-04-23 Sandisk Technologies Inc. Method and system for memory block flushing
US7936599B2 (en) * 2007-06-15 2011-05-03 Micron Technology, Inc. Coarse and fine programming in a solid state memory
US7630252B2 (en) * 2007-06-25 2009-12-08 Sandisk Corporation Systems for programming multilevel cell nonvolatile memory
US7719889B2 (en) 2007-06-25 2010-05-18 Sandisk Corporation Methods of programming multilevel cell nonvolatile memory
KR100888847B1 (ko) * 2007-06-28 2009-03-17 삼성전자주식회사 불휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
US7471567B1 (en) 2007-06-29 2008-12-30 Sandisk Corporation Method for source bias all bit line sensing in non-volatile storage
US7545678B2 (en) * 2007-06-29 2009-06-09 Sandisk Corporation Non-volatile storage with source bias all bit line sensing
US7599224B2 (en) * 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7508715B2 (en) * 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US7898885B2 (en) * 2007-07-19 2011-03-01 Micron Technology, Inc. Analog sensing of memory cells in a solid state memory device
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
KR100908560B1 (ko) * 2007-08-06 2009-07-21 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
KR101425958B1 (ko) * 2007-09-06 2014-08-04 삼성전자주식회사 멀티-비트 데이터를 저장하는 메모리 시스템 및 그것의읽기 방법
US7818493B2 (en) * 2007-09-07 2010-10-19 Sandisk Corporation Adaptive block list management
US8533562B2 (en) * 2007-09-12 2013-09-10 Sandisk Technologies Inc. Data protection after possible write abort or erase abort
US7652929B2 (en) * 2007-09-17 2010-01-26 Sandisk Corporation Non-volatile memory and method for biasing adjacent word line for verify during programming
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7751237B2 (en) * 2007-09-25 2010-07-06 Sandisk Il, Ltd. Post-facto correction for cross coupling in a flash memory
US8026170B2 (en) * 2007-09-26 2011-09-27 Sandisk Technologies Inc. Method of forming a single-layer metal conductors with multiple thicknesses
US7577034B2 (en) * 2007-09-26 2009-08-18 Sandisk Corporation Reducing programming voltage differential nonlinearity in non-volatile storage
US7978520B2 (en) 2007-09-27 2011-07-12 Sandisk Corporation Compensation of non-volatile memory chip non-idealities by program pulse adjustment
US20090088876A1 (en) * 2007-09-28 2009-04-02 Conley Kevin M Portable, digital media player and associated methods
US7773413B2 (en) * 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
KR101403429B1 (ko) * 2007-10-09 2014-06-03 삼성전자주식회사 멀티 비트 프로그래밍 장치 및 방법
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
WO2009050703A2 (en) * 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US7848142B2 (en) 2007-10-31 2010-12-07 Micron Technology, Inc. Fractional bits in memory cells
US7742335B2 (en) 2007-10-31 2010-06-22 Micron Technology, Inc. Non-volatile multilevel memory cells
US7668012B2 (en) * 2007-10-31 2010-02-23 Micron Technology, Inc. Memory cell programming
US8296498B2 (en) * 2007-11-13 2012-10-23 Sandisk Technologies Inc. Method and system for virtual fast access non-volatile RAM
WO2009063450A2 (en) * 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US8565019B2 (en) * 2007-11-20 2013-10-22 Kabushiki Kaisha Toshiba Method for controlling threshold value in nonvolatile semiconductor memory device
US7613045B2 (en) * 2007-11-26 2009-11-03 Sandisk Il, Ltd. Operation sequence and commands for measuring threshold voltage distribution in memory
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US7602639B2 (en) * 2007-12-14 2009-10-13 Spansion Llc Reading electronic memory utilizing relationships between cell state distributions
US8456905B2 (en) * 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8880483B2 (en) * 2007-12-21 2014-11-04 Sandisk Technologies Inc. System and method for implementing extensions to intelligently manage resources of a mass storage system
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8443260B2 (en) * 2007-12-27 2013-05-14 Sandisk Il Ltd. Error correction in copy back memory operations
US7813169B2 (en) 2008-01-18 2010-10-12 Qimonda Flash Gmbh Integrated circuit and method to operate an integrated circuit
KR101391361B1 (ko) * 2008-01-28 2014-05-07 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
US7808833B2 (en) * 2008-01-28 2010-10-05 Qimonda Flash Gmbh Method of operating an integrated circuit, integrated circuit and method to determine an operating point
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) * 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
KR101448851B1 (ko) * 2008-02-26 2014-10-13 삼성전자주식회사 비휘발성 메모리 장치에서의 프로그래밍 방법
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
EP2592552B1 (de) 2008-03-11 2015-11-25 Agere Systems Inc. Verfahren und Vorrichtung zur Speicherung von Daten in einem MLC-Flash-Speicher mit seitenübergreifenden Sektoren, Mehrseitencodierung und seitenweiser Codierung
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US20090271562A1 (en) * 2008-04-25 2009-10-29 Sinclair Alan W Method and system for storage address re-mapping for a multi-bank memory device
CA2629960C (en) * 2008-04-28 2009-12-08 Westport Power Inc. Apparatus and method for improving the accuracy of measurements taken with a capacitance-type sensor
US7808836B2 (en) * 2008-04-29 2010-10-05 Sandisk Il Ltd. Non-volatile memory with adaptive setting of state voltage levels
US7808819B2 (en) * 2008-04-29 2010-10-05 Sandisk Il Ltd. Method for adaptive setting of state voltage levels in non-volatile memory
US9594679B2 (en) * 2008-05-01 2017-03-14 Sandisk Il Ltd. Flash cache flushing method and system
US8051240B2 (en) * 2008-05-09 2011-11-01 Sandisk Technologies Inc. Compensating non-volatile storage using different pass voltages during program-verify and read
KR101378602B1 (ko) * 2008-05-13 2014-03-25 삼성전자주식회사 메모리 장치 및 메모리 프로그래밍 방법
US20090287893A1 (en) * 2008-05-16 2009-11-19 Skymedi Corporation Method for managing memory
US7719902B2 (en) * 2008-05-23 2010-05-18 Sandisk Corporation Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
US7952928B2 (en) * 2008-05-27 2011-05-31 Sandisk Il Ltd. Increasing read throughput in non-volatile memory
US7813172B2 (en) 2008-06-12 2010-10-12 Sandisk Corporation Nonvolatile memory with correlated multiple pass programming
JP5395167B2 (ja) * 2008-06-12 2014-01-22 サンディスク テクノロジィース インコーポレイテッド 相関複数パスプログラミングのための不揮発性メモリおよび方法
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
JP2009301679A (ja) * 2008-06-17 2009-12-24 Vantel Corp 不揮発性半導体記憶装置とその書き込み方法
US7800956B2 (en) 2008-06-27 2010-09-21 Sandisk Corporation Programming algorithm to reduce disturb with minimal extra time penalty
US7751250B2 (en) * 2008-06-27 2010-07-06 Sandisk Corporation Memory device with power noise minimization during sensing
US7751249B2 (en) * 2008-06-27 2010-07-06 Sandisk Corporation Minimizing power noise during sensing in memory device
US8762654B1 (en) 2008-07-02 2014-06-24 Marvell International Ltd. Selectively scheduling memory accesses in parallel based on access speeds of memory
US8014209B2 (en) 2008-07-02 2011-09-06 Sandisk Technologies Inc. Programming and selectively erasing non-volatile storage
US8706951B2 (en) 2008-07-18 2014-04-22 Marvell World Trade Ltd. Selectively accessing faster or slower multi-level cell memory
CN102099865B (zh) * 2008-07-22 2014-05-28 Lsi公司 用于在闪存存储器中每信号电平编程多个编程值的方法和装置
KR101468099B1 (ko) * 2008-07-24 2014-12-03 삼성전자주식회사 불휘발성 메모리 장치의 프로그램 방법
KR101528167B1 (ko) * 2008-08-01 2015-06-12 삼성전자주식회사 메모리 장치 및 메모리 데이터 판정 방법
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US7876611B2 (en) * 2008-08-08 2011-01-25 Sandisk Corporation Compensating for coupling during read operations in non-volatile storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8145855B2 (en) * 2008-09-12 2012-03-27 Sandisk Technologies Inc. Built in on-chip data scrambler for non-volatile memory
US8429330B2 (en) * 2008-09-12 2013-04-23 Sandisk Technologies Inc. Method for scrambling data in which scrambling data and scrambled data are stored in corresponding non-volatile memory locations
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
JP5537551B2 (ja) * 2008-09-28 2014-07-02 ラマト アット テル アビブ ユニバーシティ リミテッド フラッシュメモリにおける適応符号化用の方法およびシステム
US8671327B2 (en) 2008-09-28 2014-03-11 Sandisk Technologies Inc. Method and system for adaptive coding in flash memories
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US7839687B2 (en) * 2008-10-16 2010-11-23 Sandisk Corporation Multi-pass programming for memory using word line coupling
KR101486980B1 (ko) * 2008-10-27 2015-01-30 삼성전자주식회사 불휘발성 메모리의 문턱 전압 산포의 분석 방법
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
KR101518039B1 (ko) * 2008-12-08 2015-05-07 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
JP2010160871A (ja) * 2008-12-12 2010-07-22 Toshiba Corp 不揮発性半導体記憶装置
KR101642465B1 (ko) * 2008-12-12 2016-07-25 삼성전자주식회사 불휘발성 메모리 장치의 액세스 방법
KR101559336B1 (ko) * 2008-12-29 2015-10-13 삼성전자주식회사 메모리 장치의 동작 방법 및 이에 따른 메모리 장치
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8700840B2 (en) * 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US20100174845A1 (en) * 2009-01-05 2010-07-08 Sergey Anatolievich Gorobets Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques
US8094500B2 (en) * 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8040744B2 (en) * 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8244960B2 (en) 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US7974133B2 (en) 2009-01-06 2011-07-05 Sandisk Technologies Inc. Robust sensing circuit and method
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US7924614B2 (en) * 2009-01-19 2011-04-12 Macronix International Co., Ltd. Memory and boundary searching method thereof
US8166368B2 (en) * 2009-02-24 2012-04-24 International Business Machines Corporation Writing a special symbol to a memory to indicate the absence of a data signal
US8023345B2 (en) * 2009-02-24 2011-09-20 International Business Machines Corporation Iteratively writing contents to memory locations using a statistical model
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8026544B2 (en) 2009-03-30 2011-09-27 Sandisk Technologies Inc. Fabricating and operating a memory array having a multi-level cell region and a single-level cell region
US8832353B2 (en) * 2009-04-07 2014-09-09 Sandisk Technologies Inc. Host stop-transmission handling
WO2010117912A1 (en) 2009-04-08 2010-10-14 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US8351236B2 (en) 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US7983065B2 (en) 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
US8199576B2 (en) * 2009-04-08 2012-06-12 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US7907449B2 (en) 2009-04-09 2011-03-15 Sandisk Corporation Two pass erase for non-volatile storage
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8223555B2 (en) * 2009-05-07 2012-07-17 Micron Technology, Inc. Multiple level program verify in a memory device
US8102705B2 (en) * 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8307241B2 (en) * 2009-06-16 2012-11-06 Sandisk Technologies Inc. Data recovery in multi-level cell nonvolatile memory
US7974124B2 (en) 2009-06-24 2011-07-05 Sandisk Corporation Pointer based column selection techniques in non-volatile memories
US8054691B2 (en) 2009-06-26 2011-11-08 Sandisk Technologies Inc. Detecting the completion of programming for non-volatile storage
US20110002169A1 (en) * 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8134871B2 (en) * 2009-08-05 2012-03-13 Sandisk Technologies Inc. Programming memory with reduced pass voltage disturb and floating gate-to-control gate leakage
US8144511B2 (en) 2009-08-19 2012-03-27 Sandisk Technologies Inc. Selective memory cell program and erase
KR20120059506A (ko) * 2009-08-25 2012-06-08 샌디스크 아이엘 엘티디 플래시 저장 디바이스로의 데이터 복원
US8743629B2 (en) * 2009-08-31 2014-06-03 Sandisk Il Ltd. Preloading data into a flash storage device
US8400854B2 (en) 2009-09-11 2013-03-19 Sandisk Technologies Inc. Identifying at-risk data in non-volatile storage
US8386739B2 (en) * 2009-09-28 2013-02-26 International Business Machines Corporation Writing to memory using shared address buses
US8230276B2 (en) * 2009-09-28 2012-07-24 International Business Machines Corporation Writing to memory using adaptive write techniques
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8473809B2 (en) 2009-11-20 2013-06-25 Sandisk Technologies Inc. Data coding for improved ECC efficiency
US8243521B2 (en) * 2009-12-04 2012-08-14 Micron Technology, Inc. Method for kink compensation in a memory
US8473669B2 (en) * 2009-12-07 2013-06-25 Sandisk Technologies Inc. Method and system for concurrent background and foreground operations in a non-volatile memory array
US8174895B2 (en) 2009-12-15 2012-05-08 Sandisk Technologies Inc. Programming non-volatile storage with fast bit detection and verify skip
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8054684B2 (en) * 2009-12-18 2011-11-08 Sandisk Technologies Inc. Non-volatile memory and method with atomic program sequence and write abort detection
US8144512B2 (en) 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
US8631304B2 (en) 2010-01-28 2014-01-14 Sandisk Il Ltd. Overlapping error correction operations
JP5504936B2 (ja) * 2010-02-03 2014-05-28 富士通株式会社 ストレージ装置およびデータ格納制御方法
US8213255B2 (en) 2010-02-19 2012-07-03 Sandisk Technologies Inc. Non-volatile storage with temperature compensation based on neighbor state information
US8463985B2 (en) 2010-03-31 2013-06-11 International Business Machines Corporation Constrained coding to reduce floating gate coupling in non-volatile memories
US8504885B2 (en) 2010-03-31 2013-08-06 Lsi Corporation Methods and apparatus for approximating a probability density function or distribution for a received value in communication or storage systems
US8429500B2 (en) 2010-03-31 2013-04-23 Lsi Corporation Methods and apparatus for computing a probability value of a received value in communication or storage systems
US8775913B2 (en) 2010-03-31 2014-07-08 Lsi Corporation Methods and apparatus for computing soft data or log likelihood ratios for received values in communication or storage systems
TWI447733B (zh) * 2010-04-14 2014-08-01 Phison Electronics Corp 計算補償電壓與調整門檻值電壓之方法及記憶體裝置與控制器
US8218366B2 (en) * 2010-04-18 2012-07-10 Sandisk Technologies Inc. Programming non-volatile storage including reducing impact from other memory cells
US8546214B2 (en) 2010-04-22 2013-10-01 Sandisk Technologies Inc. P-type control gate in non-volatile storage and methods for forming same
US8208310B2 (en) 2010-05-04 2012-06-26 Sandisk Technologies Inc. Mitigating channel coupling effects during sensing of non-volatile storage elements
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8406051B2 (en) 2010-05-17 2013-03-26 Seagate Technology Llc Iterative demodulation and decoding for multi-page memory architecture
US8254167B2 (en) 2010-05-17 2012-08-28 Seagate Technologies Llc Joint encoding of logical pages in multi-page memory architecture
KR101692451B1 (ko) * 2010-05-24 2017-01-04 삼성전자주식회사 메모리 반도체 장치 및 그 동작 방법
US8274831B2 (en) 2010-05-24 2012-09-25 Sandisk Technologies Inc. Programming non-volatile storage with synchronized coupling
US8526237B2 (en) 2010-06-08 2013-09-03 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
US8547720B2 (en) 2010-06-08 2013-10-01 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8503233B2 (en) 2010-07-07 2013-08-06 Skymedi Corporation Method of twice programming a non-volatile flash memory with a sequence
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US8369156B2 (en) 2010-07-13 2013-02-05 Sandisk Technologies Inc. Fast random access to non-volatile storage
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
KR101682666B1 (ko) * 2010-08-11 2016-12-07 삼성전자주식회사 비휘발성 메모리 장치, 그것의 채널 부스팅 방법, 그것의 프로그램 방법 및 그것을 포함하는 메모리 시스템
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
JP5259667B2 (ja) * 2010-09-22 2013-08-07 株式会社東芝 不揮発性半導体記憶装置
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US8374031B2 (en) 2010-09-29 2013-02-12 SanDisk Technologies, Inc. Techniques for the fast settling of word lines in NAND flash memory
US8452911B2 (en) 2010-09-30 2013-05-28 Sandisk Technologies Inc. Synchronized maintenance operations in a multi-bank storage system
US8464137B2 (en) 2010-12-03 2013-06-11 International Business Machines Corporation Probabilistic multi-tier error correction in not-and (NAND) flash memory
US8837216B2 (en) 2010-12-13 2014-09-16 Sandisk Technologies Inc. Non-volatile storage system with shared bit lines connected to a single selection device
US9227456B2 (en) 2010-12-14 2016-01-05 Sandisk 3D Llc Memories with cylindrical read/write stacks
US8625322B2 (en) 2010-12-14 2014-01-07 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with low current structures and methods thereof
US9898361B2 (en) 2011-01-04 2018-02-20 Seagate Technology Llc Multi-tier detection and decoding in flash memories
US8917553B2 (en) * 2011-03-25 2014-12-23 Micron Technology, Inc. Non-volatile memory programming
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US8456911B2 (en) 2011-06-07 2013-06-04 Sandisk Technologies Inc. Intelligent shifting of read pass voltages for non-volatile storage
US8745369B2 (en) 2011-06-24 2014-06-03 SanDisk Technologies, Inc. Method and memory system for managing power based on semaphores and timers
US8694719B2 (en) 2011-06-24 2014-04-08 Sandisk Technologies Inc. Controller, storage device, and method for power throttling memory operations
US8537623B2 (en) * 2011-07-07 2013-09-17 Micron Technology, Inc. Devices and methods of programming memory cells
JP2011204356A (ja) * 2011-07-19 2011-10-13 Toshiba Corp 不揮発性半導体記憶装置
US8743615B2 (en) 2011-08-22 2014-06-03 Sandisk Technologies Inc. Read compensation for partially programmed blocks of non-volatile storage
JP2012014827A (ja) * 2011-09-12 2012-01-19 Toshiba Corp 半導体記憶装置
US8638606B2 (en) 2011-09-16 2014-01-28 Sandisk Technologies Inc. Substrate bias during program of non-volatile storage
WO2013043602A2 (en) 2011-09-19 2013-03-28 SanDisk Technologies, Inc. High endurance non-volatile storage
US8406053B1 (en) 2011-09-21 2013-03-26 Sandisk Technologies Inc. On chip dynamic read for non-volatile storage
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system
JP5380510B2 (ja) * 2011-09-30 2014-01-08 株式会社東芝 不揮発性半導体記憶装置
KR101845509B1 (ko) * 2011-10-05 2018-04-05 삼성전자주식회사 비휘발성 메모리 장치 및 이의 프로그램 방법
US8693257B2 (en) 2011-10-18 2014-04-08 Seagate Technology Llc Determining optimal read reference and programming voltages for non-volatile memory using mutual information
US8711619B2 (en) 2011-10-18 2014-04-29 Seagate Technology Llc Categorizing bit errors of solid-state, non-volatile memory
US8760932B2 (en) 2011-10-18 2014-06-24 Seagate Technology Llc Determination of memory read reference and programming voltages
US8737133B2 (en) 2011-10-18 2014-05-27 Seagate Technology Llc Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
CN103065678B (zh) * 2011-10-21 2016-01-13 点序科技股份有限公司 闪速存储器装置及其数据储存方法
US8917554B2 (en) 2011-10-26 2014-12-23 Sandisk Technologies Inc. Back-biasing word line switch transistors
US9076544B2 (en) 2011-11-18 2015-07-07 Sandisk Technologies Inc. Operation for non-volatile storage system with shared bit lines
US9036416B2 (en) 2011-11-18 2015-05-19 Sandisk Technologies Inc. Non-volatile storage with broken word line screen and data recovery
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
KR101893145B1 (ko) 2011-12-06 2018-10-05 삼성전자주식회사 메모리 시스템들 및 그것들의 블록 복사 방법들
US8762627B2 (en) 2011-12-21 2014-06-24 Sandisk Technologies Inc. Memory logical defragmentation during garbage collection
US8885404B2 (en) 2011-12-24 2014-11-11 Sandisk Technologies Inc. Non-volatile storage system with three layer floating gate
US8842471B2 (en) 2012-01-06 2014-09-23 Sandisk Technologies Inc. Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: program to verify transition
US8582381B2 (en) 2012-02-23 2013-11-12 SanDisk Technologies, Inc. Temperature based compensation during verify operations for non-volatile storage
US8937835B2 (en) 2012-03-13 2015-01-20 Sandisk Technologies Inc. Non-volatile storage with read process that reduces disturb
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8804430B2 (en) 2012-03-26 2014-08-12 Sandisk Technologies Inc. Selected word line dependent select gate diffusion region voltage during programming
US8804425B2 (en) 2012-03-26 2014-08-12 Sandisk Technologies Inc. Selected word line dependent programming voltage
US8902659B2 (en) 2012-03-26 2014-12-02 SanDisk Technologies, Inc. Shared-bit-line bit line setup scheme
US8638608B2 (en) 2012-03-26 2014-01-28 Sandisk Technologies Inc. Selected word line dependent select gate voltage during program
US9135192B2 (en) 2012-03-30 2015-09-15 Sandisk Technologies Inc. Memory system with command queue reordering
US9171627B2 (en) 2012-04-11 2015-10-27 Aplus Flash Technology, Inc. Non-boosting program inhibit scheme in NAND design
US9087595B2 (en) 2012-04-20 2015-07-21 Aplus Flash Technology, Inc. Shielding 2-cycle half-page read and program schemes for advanced NAND flash design
KR101915719B1 (ko) 2012-04-26 2019-01-08 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 동작 방법
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US8937837B2 (en) 2012-05-08 2015-01-20 Sandisk Technologies Inc. Bit line BL isolation scheme during erase operation for non-volatile storage
US8923050B2 (en) 2012-06-15 2014-12-30 Sandisk 3D Llc 3D memory with vertical bit lines and staircase word lines and vertical switches and methods thereof
US9281029B2 (en) 2012-06-15 2016-03-08 Sandisk 3D Llc Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof
US9142305B2 (en) 2012-06-28 2015-09-22 Sandisk Technologies Inc. System to reduce stress on word line select transistor during erase operation
US9053819B2 (en) * 2012-07-11 2015-06-09 Sandisk Technologies Inc. Programming method to tighten threshold voltage width with avoiding program disturb
US8824203B2 (en) * 2012-07-13 2014-09-02 Micron Technology, Inc. Multiple step programming in a memory device
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
US9036417B2 (en) 2012-09-06 2015-05-19 Sandisk Technologies Inc. On chip dynamic read level scan and error detection for nonvolatile storage
US20140071761A1 (en) 2012-09-10 2014-03-13 Sandisk Technologies Inc. Non-volatile storage with joint hard bit and soft bit reading
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US20140108705A1 (en) 2012-10-12 2014-04-17 Sandisk Technologies Inc. Use of High Endurance Non-Volatile Memory for Read Acceleration
US9159406B2 (en) 2012-11-02 2015-10-13 Sandisk Technologies Inc. Single-level cell endurance improvement with pre-defined blocks
US9087601B2 (en) 2012-12-06 2015-07-21 Sandisk Technologies Inc. Select gate bias during program of non-volatile storage
US9465731B2 (en) 2012-12-31 2016-10-11 Sandisk Technologies Llc Multi-layer non-volatile memory system having multiple partitions in a layer
US8873284B2 (en) 2012-12-31 2014-10-28 Sandisk Technologies Inc. Method and system for program scheduling in a multi-layer memory
US9734911B2 (en) 2012-12-31 2017-08-15 Sandisk Technologies Llc Method and system for asynchronous die operations in a non-volatile memory
US9734050B2 (en) 2012-12-31 2017-08-15 Sandisk Technologies Llc Method and system for managing background operations in a multi-layer memory
US9223693B2 (en) 2012-12-31 2015-12-29 Sandisk Technologies Inc. Memory system having an unequal number of memory die on different control channels
US9348746B2 (en) 2012-12-31 2016-05-24 Sandisk Technologies Method and system for managing block reclaim operations in a multi-layer memory
US9336133B2 (en) 2012-12-31 2016-05-10 Sandisk Technologies Inc. Method and system for managing program cycles including maintenance programming operations in a multi-layer memory
US9076545B2 (en) 2013-01-17 2015-07-07 Sandisk Tecnologies Inc. Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
US8913428B2 (en) 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
US9026757B2 (en) 2013-01-25 2015-05-05 Sandisk Technologies Inc. Non-volatile memory programming data preservation
KR102106866B1 (ko) 2013-01-29 2020-05-06 삼성전자주식회사 멀티레벨 불휘발성 메모리 장치 및 프로그램 방법
US8885416B2 (en) 2013-01-30 2014-11-11 Sandisk Technologies Inc. Bit line current trip point modulation for reading nonvolatile storage elements
US8971128B2 (en) 2013-01-31 2015-03-03 Sandisk Technologies Inc. Adaptive initial program voltage for non-volatile memory
US9064547B2 (en) 2013-03-05 2015-06-23 Sandisk 3D Llc 3D non-volatile memory having low-current cells and methods
US9349452B2 (en) 2013-03-07 2016-05-24 Sandisk Technologies Inc. Hybrid non-volatile memory cells for shared bit line
US9135109B2 (en) 2013-03-11 2015-09-15 Seagate Technology Llc Determination of optimum threshold voltage to read data values in memory cells
US9165656B2 (en) 2013-03-11 2015-10-20 Sandisk Technologies Inc. Non-volatile storage with shared bit lines and flat memory cells
US9367389B2 (en) 2013-03-14 2016-06-14 Seagate Technology Llc Recovery strategy that reduces errors misidentified as reliable
US9037902B2 (en) 2013-03-15 2015-05-19 Sandisk Technologies Inc. Flash memory techniques for recovering from write interrupt resulting from voltage fault
US8988947B2 (en) 2013-03-25 2015-03-24 Sandisk Technologies Inc. Back bias during program verify of non-volatile storage
TWI511156B (zh) * 2013-05-13 2015-12-01 Winbond Electronics Corp 參考記憶胞的偏壓產生器及偏壓提供方法
US9183940B2 (en) 2013-05-21 2015-11-10 Aplus Flash Technology, Inc. Low disturbance, power-consumption, and latency in NAND read and program-verify operations
US9123430B2 (en) 2013-06-14 2015-09-01 Sandisk 3D Llc Differential current sense amplifier and method for non-volatile memory
US8933516B1 (en) 2013-06-24 2015-01-13 Sandisk 3D Llc High capacity select switches for three-dimensional structures
US9263137B2 (en) 2013-06-27 2016-02-16 Aplus Flash Technology, Inc. NAND array architecture for multiple simutaneous program and read
KR102125376B1 (ko) 2013-07-01 2020-06-23 삼성전자주식회사 저장 장치 및 그것의 쓰기 방법
KR102076231B1 (ko) * 2013-07-09 2020-02-12 에스케이하이닉스 주식회사 데이터 저장 장치, 그것의 동작 방법 및 그것을 포함하는 데이터 처리 시스템
WO2015013689A2 (en) 2013-07-25 2015-01-29 Aplus Flash Technology, Inc. Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations
US9293205B2 (en) 2013-09-14 2016-03-22 Aplus Flash Technology, Inc Multi-task concurrent/pipeline NAND operations on all planes
US9007841B1 (en) 2013-10-24 2015-04-14 Western Digital Technologies, Inc. Programming scheme for improved voltage distribution in solid-state memory
US9613704B2 (en) 2013-12-25 2017-04-04 Aplus Flash Technology, Inc 2D/3D NAND memory array with bit-line hierarchical structure for multi-page concurrent SLC/MLC program and program-verify
US9202559B2 (en) 2014-03-12 2015-12-01 Kabushiki Kaisha Toshiba Semiconductor memory device and method of controlling the same
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9123392B1 (en) 2014-03-28 2015-09-01 Sandisk 3D Llc Non-volatile 3D memory with cell-selectable word line decoding
US9343141B2 (en) * 2014-07-15 2016-05-17 Sandisk Technologies Inc. Reprogramming memory with single program pulse per data state
WO2016014731A1 (en) 2014-07-22 2016-01-28 Aplus Flash Technology, Inc. Yukai vsl-based vt-compensation for nand memory
US9588701B2 (en) 2014-09-09 2017-03-07 Sandisk Technologies Llc Multi-stage programming at a storage device using multiple instructions from a host
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9443606B2 (en) 2014-10-28 2016-09-13 Sandisk Technologies Llc Word line dependent two strobe sensing mode for nonvolatile storage elements
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US20160181435A1 (en) * 2014-12-22 2016-06-23 Wafertech, Llc Floating gate transistors and method for forming the same
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US10157681B2 (en) 2015-09-14 2018-12-18 Sandisk Technologies Llc Programming of nonvolatile memory with verify level dependent on memory state and programming loop count
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US9711211B2 (en) * 2015-10-29 2017-07-18 Sandisk Technologies Llc Dynamic threshold voltage compaction for non-volatile memory
US9778855B2 (en) 2015-10-30 2017-10-03 Sandisk Technologies Llc System and method for precision interleaving of data writes in a non-volatile memory
US10133490B2 (en) 2015-10-30 2018-11-20 Sandisk Technologies Llc System and method for managing extended maintenance scheduling in a non-volatile memory
US10042553B2 (en) 2015-10-30 2018-08-07 Sandisk Technologies Llc Method and system for programming a multi-layer non-volatile memory having a single fold data path
US10120613B2 (en) 2015-10-30 2018-11-06 Sandisk Technologies Llc System and method for rescheduling host and maintenance operations in a non-volatile memory
KR102451154B1 (ko) 2015-12-07 2022-10-06 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법
US10248499B2 (en) 2016-06-24 2019-04-02 Sandisk Technologies Llc Non-volatile storage system using two pass programming with bit error control
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10048887B2 (en) 2016-10-27 2018-08-14 Micron Technology, Inc. Apparatuses and methods for single level cell caching
JP2018160056A (ja) * 2017-03-22 2018-10-11 東芝メモリ株式会社 メモリコントローラ、メモリシステムおよび制御方法
US9928126B1 (en) 2017-06-01 2018-03-27 Apple Inc. Recovery from cross-temperature read failures by programming neighbor word lines
US10877827B2 (en) * 2017-09-15 2020-12-29 Pure Storage, Inc. Read voltage optimization
US10304550B1 (en) 2017-11-29 2019-05-28 Sandisk Technologies Llc Sense amplifier with negative threshold sensing for non-volatile memory
JP7051546B2 (ja) * 2018-04-16 2022-04-11 キオクシア株式会社 メモリシステムおよび制御方法
CN110827904B (zh) * 2018-08-09 2023-04-14 旺宏电子股份有限公司 存储器装置及其编程方法
KR20200076524A (ko) * 2018-12-19 2020-06-29 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
US10643695B1 (en) 2019-01-10 2020-05-05 Sandisk Technologies Llc Concurrent multi-state program verify for non-volatile memory
US11024392B1 (en) 2019-12-23 2021-06-01 Sandisk Technologies Llc Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
US11205473B2 (en) * 2020-02-04 2021-12-21 Western Digital Technologies, Inc. Dual SLC/QLC programming and resource releasing
KR20220068541A (ko) 2020-11-19 2022-05-26 삼성전자주식회사 비휘발성 메모리 장치 및 이의 동작 방법
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939690A (en) * 1987-12-28 1990-07-03 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
DE69034191T2 (de) * 1989-04-13 2005-11-24 Sandisk Corp., Sunnyvale EEPROM-System mit aus mehreren Chips bestehender Blocklöschung
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5663901A (en) * 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
US5430859A (en) * 1991-07-26 1995-07-04 Sundisk Corporation Solid state memory system including plural memory chips and a serialized bus
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5555204A (en) * 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
KR0172401B1 (ko) * 1995-12-07 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 장치
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
JP3976839B2 (ja) * 1996-07-09 2007-09-19 株式会社ルネサステクノロジ 不揮発性メモリシステムおよび不揮発性半導体メモリ
JP3930074B2 (ja) 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
US5890192A (en) * 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
JPH10228784A (ja) * 1997-02-12 1998-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5926409A (en) * 1997-09-05 1999-07-20 Information Storage Devices, Inc. Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application
US6108238A (en) * 1997-09-11 2000-08-22 Kabushiki Kaisha Toshiba Programmable semiconductor memory device having program voltages and verify voltages
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
DE59913479D1 (de) * 1998-03-23 2006-07-06 Infineon Technologies Ag Verfahren zur Programmierung einer Festwert-Speicherzellenanordnung
JP3098486B2 (ja) * 1998-03-31 2000-10-16 山形日本電気株式会社 不揮発性半導体記憶装置
US6151248A (en) * 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
JP2001067884A (ja) * 1999-08-31 2001-03-16 Hitachi Ltd 不揮発性半導体記憶装置
JP3863330B2 (ja) * 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
KR100318325B1 (ko) * 1999-10-19 2001-12-22 박종섭 플래쉬 메모리 셀의 소거 방법
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6512263B1 (en) * 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6456528B1 (en) * 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode

Also Published As

Publication number Publication date
EP1271553A3 (de) 2004-05-06
US20050047223A1 (en) 2005-03-03
CN1414566A (zh) 2003-04-30
US20030002348A1 (en) 2003-01-02
JP2003109386A (ja) 2003-04-11
EP1814122B1 (de) 2013-05-15
CN101127240B (zh) 2012-02-08
JP4221196B2 (ja) 2009-02-12
US6522580B2 (en) 2003-02-18
EP1271553B1 (de) 2007-06-13
KR100926950B1 (ko) 2009-11-17
CN100350503C (zh) 2007-11-21
CN101127240A (zh) 2008-02-20
EP1814122A1 (de) 2007-08-01
US7224613B2 (en) 2007-05-29
EP1271553A2 (de) 2003-01-02
US7061798B2 (en) 2006-06-13
US6807095B2 (en) 2004-10-19
ATE364885T1 (de) 2007-07-15
TW583672B (en) 2004-04-11
KR20030011248A (ko) 2003-02-07
US20050276101A1 (en) 2005-12-15
US20030128586A1 (en) 2003-07-10
DE60220590T2 (de) 2008-02-14

Similar Documents

Publication Publication Date Title
ATE364885T1 (de) Verfahren zur reduzierung von kopplungseffekten zwischen multi-level speicherelementen eines nicht flüchtigen speichers
KR100771883B1 (ko) 멀티-레벨 불휘발성 메모리 장치 및 프로그램 방법
US7372754B2 (en) Method and apparatus for controlling slope of word line voltage in nonvolatile memory device
KR100875538B1 (ko) 불휘발성 메모리 장치 및 그것의 프로그램 및 소거 방법
KR100697285B1 (ko) 워드라인과 선택라인 사이에 보호라인을 가지는 낸드플래시 메모리 장치
US8995195B2 (en) Fast-reading NAND flash memory
US20070115724A1 (en) Nonvolatile semiconductor memory with low-loading bit line architecture and method of programming the same
US20070279989A1 (en) Programming a non-volatile memory device
US10861557B2 (en) Semiconductor storage apparatus
ATE485589T1 (de) Verfahrenstechniken zur reduzierung von programm- und lesestörungen eines nicht-flüchtigen speichers
US20080175069A1 (en) Method of performing an erase operation in a non-volatile memory device
GB2449175A (en) Negative Incremental Step Pulse Programming of NAND EEPROM Memory Cells
US8964467B1 (en) Systems and methods for partial page programming of multi level cells
TW200519949A (en) Memory device and method using positive gate stress to recover overerased cell
ATE208536T1 (de) Überlöschungsdetektion in einer niederspannungs- eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung
KR100891406B1 (ko) 불휘발성 메모리 소자의 소거 방법
KR100888616B1 (ko) 소거 동작 전에 프리 프로그램 동작을 수행하는 낸드플래시 메모리 및 그것의 소거 방법
US20110116311A1 (en) Reduction of punch-through disturb during programming of a memory device
DE69226546D1 (de) Verfahren zur Programmierung von Flash EEPROM-Zellenmatrizen
KR101138101B1 (ko) 불휘발성 메모리 소자의 프로그램 방법
EP0108681A3 (de) Bit-löschbarer EEPROM
US7990770B2 (en) Method of programming nonvolatile memory device
KR100905867B1 (ko) 멀티 레벨 셀을 갖는 플래쉬 메모리 소자의 프로그램 방법
EP2102868B1 (de) Verfahren und system zur niedrigspannungsprogrammierung nicht-flüchtiger speicherzellen
KR100811277B1 (ko) 낸드 플래시 메모리소자의 소거방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition