DE60220912D1 - Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben - Google Patents

Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben

Info

Publication number
DE60220912D1
DE60220912D1 DE60220912T DE60220912T DE60220912D1 DE 60220912 D1 DE60220912 D1 DE 60220912D1 DE 60220912 T DE60220912 T DE 60220912T DE 60220912 T DE60220912 T DE 60220912T DE 60220912 D1 DE60220912 D1 DE 60220912D1
Authority
DE
Germany
Prior art keywords
self
production
memory device
installing
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60220912T
Other languages
English (en)
Other versions
DE60220912T2 (de
Inventor
Juri H Krieger
Nikolay F Yudanov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE60220912D1 publication Critical patent/DE60220912D1/de
Publication of DE60220912T2 publication Critical patent/DE60220912T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
DE60220912T 2001-05-07 2002-05-07 Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben Expired - Lifetime DE60220912T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28905401P 2001-05-07 2001-05-07
US289054P 2001-05-07
PCT/US2002/014236 WO2002091384A1 (en) 2001-05-07 2002-05-07 A memory device with a self-assembled polymer film and method of making the same

Publications (2)

Publication Number Publication Date
DE60220912D1 true DE60220912D1 (de) 2007-08-09
DE60220912T2 DE60220912T2 (de) 2008-02-28

Family

ID=23109830

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60220912T Expired - Lifetime DE60220912T2 (de) 2001-05-07 2002-05-07 Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben

Country Status (7)

Country Link
US (2) US6855977B2 (de)
EP (1) EP1397809B1 (de)
JP (1) JP4886160B2 (de)
KR (1) KR100900080B1 (de)
CN (1) CN100403450C (de)
DE (1) DE60220912T2 (de)
WO (1) WO2002091384A1 (de)

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KR100900080B1 (ko) 2009-06-01
JP2004527130A (ja) 2004-09-02
US20020163828A1 (en) 2002-11-07
WO2002091384A1 (en) 2002-11-14
CN1513184A (zh) 2004-07-14
JP4886160B2 (ja) 2012-02-29
KR20040000453A (ko) 2004-01-03
EP1397809A1 (de) 2004-03-17
DE60220912T2 (de) 2008-02-28
US7295461B1 (en) 2007-11-13
EP1397809B1 (de) 2007-06-27
CN100403450C (zh) 2008-07-16

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