DE60221321D1 - Herstellungsverfahren einer HF-Induktivität - Google Patents
Herstellungsverfahren einer HF-InduktivitätInfo
- Publication number
- DE60221321D1 DE60221321D1 DE60221321T DE60221321T DE60221321D1 DE 60221321 D1 DE60221321 D1 DE 60221321D1 DE 60221321 T DE60221321 T DE 60221321T DE 60221321 T DE60221321 T DE 60221321T DE 60221321 D1 DE60221321 D1 DE 60221321D1
- Authority
- DE
- Germany
- Prior art keywords
- inductor
- helical shape
- manufacturing
- metal
- damascened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/867,561 US6387747B1 (en) | 2001-05-31 | 2001-05-31 | Method to fabricate RF inductors with minimum area |
| US867561 | 2001-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60221321D1 true DE60221321D1 (de) | 2007-09-06 |
| DE60221321T2 DE60221321T2 (de) | 2008-04-10 |
Family
ID=25350030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60221321T Expired - Fee Related DE60221321T2 (de) | 2001-05-31 | 2002-05-29 | Herstellungsverfahren einer HF-Induktivität |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6387747B1 (de) |
| EP (1) | EP1267391B1 (de) |
| AT (1) | ATE368296T1 (de) |
| DE (1) | DE60221321T2 (de) |
| SG (1) | SG103858A1 (de) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002252281A (ja) * | 2001-02-27 | 2002-09-06 | Sony Corp | 半導体装置およびその製造方法 |
| US7148553B1 (en) * | 2001-08-01 | 2006-12-12 | Davies Robert B | Semiconductor device with inductive component and method of making |
| US6856007B2 (en) | 2001-08-28 | 2005-02-15 | Tessera, Inc. | High-frequency chip packages |
| US7176506B2 (en) * | 2001-08-28 | 2007-02-13 | Tessera, Inc. | High frequency chip packages with connecting elements |
| ITTO20011038A1 (it) * | 2001-10-30 | 2003-04-30 | St Microelectronics Srl | Procedimento per la fabbricazione di una fetta semiconduttrice integrante dispositivi elettronici e una struttura per il disaccoppiamento el |
| FR2833411B1 (fr) * | 2001-12-11 | 2004-02-27 | Memscap | Procede de fabrication d'un composant electronique incorporant un micro-composant inductif |
| US7754537B2 (en) * | 2003-02-25 | 2010-07-13 | Tessera, Inc. | Manufacture of mountable capped chips |
| JP3827314B2 (ja) * | 2003-03-17 | 2006-09-27 | Ｔｄｋ株式会社 | インダクティブデバイスの製造方法 |
| US6716693B1 (en) * | 2003-03-27 | 2004-04-06 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a surface coating layer within an opening within a body by atomic layer deposition |
| KR100577016B1 (ko) * | 2003-11-05 | 2006-05-10 | 매그나칩 반도체 유한회사 | 반도체 소자의 ｒｆ 인덕터 제조 방법 |
| FR2876243B1 (fr) * | 2004-10-04 | 2007-01-26 | Commissariat Energie Atomique | Composant a protuberances conductrices ductiles enterrees et procede de connexion electrique entre ce composant et un composant muni de pointes conductrices dures |
| US8143095B2 (en) | 2005-03-22 | 2012-03-27 | Tessera, Inc. | Sequential fabrication of vertical conductive interconnects in capped chips |
| US7410894B2 (en) * | 2005-07-27 | 2008-08-12 | International Business Machines Corporation | Post last wiring level inductor using patterned plate process |
| US7399696B2 (en) * | 2005-08-02 | 2008-07-15 | International Business Machines Corporation | Method for high performance inductor fabrication using a triple damascene process with copper BEOL |
| US7473999B2 (en) * | 2005-09-23 | 2009-01-06 | Megica Corporation | Semiconductor chip and process for forming the same |
| US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
| US8604605B2 (en) | 2007-01-05 | 2013-12-10 | Invensas Corp. | Microelectronic assembly with multi-layer support structure |
| US20090085704A1 (en) * | 2007-10-01 | 2009-04-02 | Infineon Technologies Austria Ag | Chip inductor |
| US10593449B2 (en) | 2017-03-30 | 2020-03-17 | International Business Machines Corporation | Magnetic inductor with multiple magnetic layer thicknesses |
| US10607759B2 (en) | 2017-03-31 | 2020-03-31 | International Business Machines Corporation | Method of fabricating a laminated stack of magnetic inductor |
| US10597769B2 (en) | 2017-04-05 | 2020-03-24 | International Business Machines Corporation | Method of fabricating a magnetic stack arrangement of a laminated magnetic inductor |
| US10347411B2 (en) | 2017-05-19 | 2019-07-09 | International Business Machines Corporation | Stress management scheme for fabricating thick magnetic films of an inductor yoke arrangement |
| US11289365B2 (en) * | 2019-11-07 | 2022-03-29 | Qualcomm Incorporated | Air gap underneath passive devices |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994017558A1 (en) | 1993-01-29 | 1994-08-04 | The Regents Of The University Of California | Monolithic passive component |
| US5478773A (en) | 1994-04-28 | 1995-12-26 | Motorola, Inc. | Method of making an electronic device having an integrated inductor |
| US5610569A (en) * | 1996-01-31 | 1997-03-11 | Hughes Electronics | Staggered horizontal inductor for use with multilayer substrate |
| US5717243A (en) | 1996-04-24 | 1998-02-10 | Harris Corporation | Integrated circuit with an improved inductor structure and method of fabrication |
| JP2000515323A (ja) * | 1996-07-18 | 2000-11-14 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | エッチングストップを用いて互い違いの配線を生成する集積回路 |
| US5793272A (en) | 1996-08-23 | 1998-08-11 | International Business Machines Corporation | Integrated circuit toroidal inductor |
| KR100211030B1 (ko) | 1996-12-21 | 1999-07-15 | 정선종 | 다층 금속배선 기술을 이용한 모스트랜지스터 내장형 인덕터 소자 |
| FR2771843B1 (fr) * | 1997-11-28 | 2000-02-11 | Sgs Thomson Microelectronics | Transformateur en circuit integre |
| US6187647B1 (en) * | 1999-10-12 | 2001-02-13 | Lucent Technologies Inc. | Method of manufacturing lateral high-Q inductor for semiconductor devices |
| US6309922B1 (en) * | 2000-07-28 | 2001-10-30 | Conexant Systems, Inc. | Method for fabrication of on-chip inductors and related structure |
-
2001
- 2001-05-31 US US09/867,561 patent/US6387747B1/en not_active Expired - Lifetime
-
2002
- 2002-04-29 SG SG200202569A patent/SG103858A1/en unknown
- 2002-05-29 EP EP02392008A patent/EP1267391B1/de not_active Expired - Lifetime
- 2002-05-29 DE DE60221321T patent/DE60221321T2/de not_active Expired - Fee Related
- 2002-05-29 AT AT02392008T patent/ATE368296T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1267391A1 (de) | 2002-12-18 |
| DE60221321T2 (de) | 2008-04-10 |
| US6387747B1 (en) | 2002-05-14 |
| ATE368296T1 (de) | 2007-08-15 |
| EP1267391B1 (de) | 2007-07-25 |
| SG103858A1 (en) | 2004-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |