DE60229641D1 - Verfahren zur sanften programmierung eines dual-zellen-speichers mit virtueller masse - Google Patents

Verfahren zur sanften programmierung eines dual-zellen-speichers mit virtueller masse

Info

Publication number
DE60229641D1
DE60229641D1 DE60229641T DE60229641T DE60229641D1 DE 60229641 D1 DE60229641 D1 DE 60229641D1 DE 60229641 T DE60229641 T DE 60229641T DE 60229641 T DE60229641 T DE 60229641T DE 60229641 D1 DE60229641 D1 DE 60229641D1
Authority
DE
Germany
Prior art keywords
programming
soft
current
gentle
cell memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60229641T
Other languages
English (en)
Inventor
John H Pasternak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60229641D1 publication Critical patent/DE60229641D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
DE60229641T 2001-05-25 2002-05-17 Verfahren zur sanften programmierung eines dual-zellen-speichers mit virtueller masse Expired - Lifetime DE60229641D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/865,320 US6522585B2 (en) 2001-05-25 2001-05-25 Dual-cell soft programming for virtual-ground memory arrays
PCT/US2002/015570 WO2002096632A2 (en) 2001-05-25 2002-05-17 Dual-cell soft programming for virtual-ground memory arrays

Publications (1)

Publication Number Publication Date
DE60229641D1 true DE60229641D1 (de) 2008-12-11

Family

ID=25345234

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60229641T Expired - Lifetime DE60229641D1 (de) 2001-05-25 2002-05-17 Verfahren zur sanften programmierung eines dual-zellen-speichers mit virtueller masse

Country Status (9)

Country Link
US (1) US6522585B2 (de)
EP (1) EP1409237B1 (de)
JP (1) JP4212901B2 (de)
KR (1) KR100897590B1 (de)
AT (1) ATE412964T1 (de)
AU (1) AU2002311936A1 (de)
DE (1) DE60229641D1 (de)
TW (1) TW559816B (de)
WO (1) WO2002096632A2 (de)

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Also Published As

Publication number Publication date
US20020176280A1 (en) 2002-11-28
US6522585B2 (en) 2003-02-18
WO2002096632A2 (en) 2002-12-05
KR20030043918A (ko) 2003-06-02
EP1409237B1 (de) 2008-10-29
ATE412964T1 (de) 2008-11-15
TW559816B (en) 2003-11-01
KR100897590B1 (ko) 2009-05-14
WO2002096632A3 (en) 2004-02-05
EP1409237A2 (de) 2004-04-21
AU2002311936A1 (en) 2002-12-09
JP2004527868A (ja) 2004-09-09
JP4212901B2 (ja) 2009-01-21

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