DE60230725D1 - Verfahren zum verarbeiten von rutheniumsilizid - Google Patents
Verfahren zum verarbeiten von rutheniumsilizidInfo
- Publication number
- DE60230725D1 DE60230725D1 DE60230725T DE60230725T DE60230725D1 DE 60230725 D1 DE60230725 D1 DE 60230725D1 DE 60230725 T DE60230725 T DE 60230725T DE 60230725 T DE60230725 T DE 60230725T DE 60230725 D1 DE60230725 D1 DE 60230725D1
- Authority
- DE
- Germany
- Prior art keywords
- ruthenium silicide
- exposed
- ruthenium
- silicide
- backside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052707 ruthenium Inorganic materials 0.000 title abstract 6
- 229910021332 silicide Inorganic materials 0.000 title abstract 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 239000000243 solution Substances 0.000 abstract 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 238000003672 processing method Methods 0.000 abstract 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 abstract 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
- H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/810,008 US6399492B1 (en) | 2001-03-15 | 2001-03-15 | Ruthenium silicide processing methods |
| PCT/US2002/007648 WO2002075803A2 (en) | 2001-03-15 | 2002-03-11 | Ruthenium silicide processing methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60230725D1 true DE60230725D1 (de) | 2009-02-26 |
Family
ID=25202736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60230725T Expired - Lifetime DE60230725D1 (de) | 2001-03-15 | 2002-03-11 | Verfahren zum verarbeiten von rutheniumsilizid |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6399492B1 (de) |
| EP (1) | EP1368825B1 (de) |
| JP (1) | JP4292502B2 (de) |
| KR (1) | KR100505175B1 (de) |
| CN (1) | CN1271693C (de) |
| AT (1) | ATE420460T1 (de) |
| AU (1) | AU2002248614A1 (de) |
| DE (1) | DE60230725D1 (de) |
| WO (1) | WO2002075803A2 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498110B2 (en) * | 2001-03-05 | 2002-12-24 | Micron Technology, Inc. | Ruthenium silicide wet etch |
| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| US20040114867A1 (en) * | 2002-12-17 | 2004-06-17 | Matthew Nielsen | Tunable micro-ring filter for optical WDM/DWDM communication |
| US7597819B1 (en) * | 2004-12-20 | 2009-10-06 | Sandia Corporation | Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films |
| CN101180379B (zh) * | 2005-03-25 | 2013-07-24 | 气体产品与化学公司 | 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物 |
| US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
| US20070295357A1 (en) * | 2006-06-27 | 2007-12-27 | Lovejoy Michael L | Removing metal using an oxidizing chemistry |
| CA3202964A1 (en) | 2011-12-06 | 2013-06-13 | Delta Faucet Company | Ozone distribution in a faucet |
| CN108463437B (zh) | 2015-12-21 | 2022-07-08 | 德尔塔阀门公司 | 包括消毒装置的流体输送系统 |
| JP7453874B2 (ja) * | 2020-07-30 | 2024-03-21 | 芝浦メカトロニクス株式会社 | 基板処理方法、および基板処理装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2658966B2 (ja) * | 1995-04-20 | 1997-09-30 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| US6313035B1 (en) * | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
| US6090697A (en) * | 1997-06-30 | 2000-07-18 | Texas Instruments Incorporated | Etchstop for integrated circuits |
| US6153490A (en) * | 1997-07-01 | 2000-11-28 | Texas Instruments Incorporated | Method for forming integrated circuit capacitor and memory |
| US6063705A (en) * | 1998-08-27 | 2000-05-16 | Micron Technology, Inc. | Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide |
| US6133159A (en) * | 1998-08-27 | 2000-10-17 | Micron Technology, Inc. | Methods for preparing ruthenium oxide films |
| US6074945A (en) * | 1998-08-27 | 2000-06-13 | Micron Technology, Inc. | Methods for preparing ruthenium metal films |
| US6197628B1 (en) * | 1998-08-27 | 2001-03-06 | Micron Technology, Inc. | Ruthenium silicide diffusion barrier layers and methods of forming same |
| US5962716A (en) | 1998-08-27 | 1999-10-05 | Micron Technology, Inc. | Methods for preparing ruthenium and osmium compounds |
| US6284655B1 (en) * | 1998-09-03 | 2001-09-04 | Micron Technology, Inc. | Method for producing low carbon/oxygen conductive layers |
| US6342446B1 (en) * | 1998-10-06 | 2002-01-29 | Texas Instruments Incorporated | Plasma process for organic residue removal from copper |
| JP3676958B2 (ja) * | 1999-12-28 | 2005-07-27 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
-
2001
- 2001-03-15 US US09/810,008 patent/US6399492B1/en not_active Expired - Lifetime
-
2002
- 2002-03-11 AU AU2002248614A patent/AU2002248614A1/en not_active Abandoned
- 2002-03-11 AT AT02717625T patent/ATE420460T1/de not_active IP Right Cessation
- 2002-03-11 WO PCT/US2002/007648 patent/WO2002075803A2/en active IP Right Grant
- 2002-03-11 CN CNB028066537A patent/CN1271693C/zh not_active Expired - Fee Related
- 2002-03-11 JP JP2002574120A patent/JP4292502B2/ja not_active Expired - Fee Related
- 2002-03-11 EP EP02717625A patent/EP1368825B1/de not_active Expired - Lifetime
- 2002-03-11 KR KR10-2003-7010253A patent/KR100505175B1/ko not_active IP Right Cessation
- 2002-03-11 DE DE60230725T patent/DE60230725D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1533598A (zh) | 2004-09-29 |
| JP4292502B2 (ja) | 2009-07-08 |
| KR20030074777A (ko) | 2003-09-19 |
| EP1368825A2 (de) | 2003-12-10 |
| ATE420460T1 (de) | 2009-01-15 |
| US6399492B1 (en) | 2002-06-04 |
| KR100505175B1 (ko) | 2005-08-02 |
| WO2002075803A3 (en) | 2003-05-01 |
| JP2004527115A (ja) | 2004-09-02 |
| EP1368825B1 (de) | 2009-01-07 |
| WO2002075803A2 (en) | 2002-09-26 |
| AU2002248614A1 (en) | 2002-10-03 |
| CN1271693C (zh) | 2006-08-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |