DE60235872D1 - Hoch q-faktor induktivität mit im substrat vergrabenen faraday-schirm und dielektrischer wanne - Google Patents

Hoch q-faktor induktivität mit im substrat vergrabenen faraday-schirm und dielektrischer wanne

Info

Publication number
DE60235872D1
DE60235872D1 DE60235872T DE60235872T DE60235872D1 DE 60235872 D1 DE60235872 D1 DE 60235872D1 DE 60235872 T DE60235872 T DE 60235872T DE 60235872 T DE60235872 T DE 60235872T DE 60235872 D1 DE60235872 D1 DE 60235872D1
Authority
DE
Germany
Prior art keywords
substrate
dielectric
drawed
inductivity
tub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60235872T
Other languages
English (en)
Inventor
Raul Acosta
Jennifer Lund
Robert Groves
Joanna Rosner
Steven Cordes
Melanie Carasso
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE60235872D1 publication Critical patent/DE60235872D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • H01F27/363—Electric or magnetic shields or screens made of electrically conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
DE60235872T 2001-02-10 2002-02-07 Hoch q-faktor induktivität mit im substrat vergrabenen faraday-schirm und dielektrischer wanne Expired - Lifetime DE60235872D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/781,014 US6534843B2 (en) 2001-02-10 2001-02-10 High Q inductor with faraday shield and dielectric well buried in substrate
PCT/GB2002/000525 WO2002065490A1 (en) 2001-02-10 2002-02-07 High q inductor with faraday shield and dielectric well buried in substrate

Publications (1)

Publication Number Publication Date
DE60235872D1 true DE60235872D1 (de) 2010-05-20

Family

ID=25121395

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60235872T Expired - Lifetime DE60235872D1 (de) 2001-02-10 2002-02-07 Hoch q-faktor induktivität mit im substrat vergrabenen faraday-schirm und dielektrischer wanne

Country Status (9)

Country Link
US (2) US6534843B2 (de)
EP (1) EP1358661B1 (de)
JP (1) JP3777159B2 (de)
KR (1) KR100522655B1 (de)
CN (1) CN1295717C (de)
AT (1) ATE463828T1 (de)
DE (1) DE60235872D1 (de)
TW (1) TW548798B (de)
WO (1) WO2002065490A1 (de)

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US7350292B2 (en) * 2004-03-19 2008-04-01 Hewlett-Packard Development Company, L.P. Method for affecting impedance of an electrical apparatus
US7255801B2 (en) * 2004-04-08 2007-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Deep submicron CMOS compatible suspending inductor
US7005371B2 (en) * 2004-04-29 2006-02-28 International Business Machines Corporation Method of forming suspended transmission line structures in back end of line processing
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US7663205B2 (en) 2004-08-03 2010-02-16 Samsung Electronics Co., Ltd. Integrated circuit devices including a dummy gate structure below a passive electronic element
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US7501924B2 (en) * 2005-09-30 2009-03-10 Silicon Laboratories Inc. Self-shielding inductor
JP4908035B2 (ja) * 2006-03-30 2012-04-04 株式会社東芝 半導体集積回路
DE102006062844B4 (de) * 2006-05-12 2016-11-17 Infineon Technologies Ag Abschirmvorrichtung zum Abschirmen von elektromagnetischer Strahlung
DE102006022360B4 (de) 2006-05-12 2009-07-09 Infineon Technologies Ag Abschirmvorrichtung
US8455350B2 (en) * 2006-08-18 2013-06-04 Globalfoundries Singapore Pte. Ltd. Integrated circuit system employing gate shield and/or ground shield
US7489218B2 (en) * 2007-01-24 2009-02-10 Via Technologies, Inc. Inductor structure
US8058960B2 (en) * 2007-03-27 2011-11-15 Alpha And Omega Semiconductor Incorporated Chip scale power converter package having an inductor substrate
US8492872B2 (en) * 2007-10-05 2013-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. On-chip inductors with through-silicon-via fence for Q improvement
US8169050B2 (en) * 2008-06-26 2012-05-01 International Business Machines Corporation BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit
US7811919B2 (en) * 2008-06-26 2010-10-12 International Business Machines Corporation Methods of fabricating a BEOL wiring structure containing an on-chip inductor and an on-chip capacitor
US7948346B2 (en) * 2008-06-30 2011-05-24 Alpha & Omega Semiconductor, Ltd Planar grooved power inductor structure and method
US8237243B2 (en) 2009-03-18 2012-08-07 International Business Machines Corporation On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit
US8164159B1 (en) 2009-07-18 2012-04-24 Intergrated Device Technologies, inc. Semiconductor resonators with electromagnetic and environmental shielding and methods of forming same
EP2302675A1 (de) * 2009-09-29 2011-03-30 STMicroelectronics (Grenoble 2) SAS Elektronische Schaltung mit einem Induktor
JP6009139B2 (ja) * 2010-06-22 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
CN102208405B (zh) * 2010-08-24 2015-11-25 华东师范大学 平面螺旋电感
US8648664B2 (en) 2011-09-30 2014-02-11 Silicon Laboratories Inc. Mutual inductance circuits
US8809956B2 (en) * 2011-10-13 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Vertically oriented semiconductor device and shielding structure thereof
US8659126B2 (en) * 2011-12-07 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit ground shielding structure
US8610247B2 (en) 2011-12-30 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a transformer with magnetic features
US8644948B2 (en) 2011-10-28 2014-02-04 Medtronic, Inc. Converter device for communicating with multiple medical devices
US8710622B2 (en) 2011-11-17 2014-04-29 Harris Corporation Defected ground plane inductor
US8664717B2 (en) 2012-01-09 2014-03-04 Globalfoundries Inc. Semiconductor device with an oversized local contact as a Faraday shield
US9064868B2 (en) 2012-10-12 2015-06-23 Globalfoundries Inc. Advanced faraday shield for a semiconductor device
US9355972B2 (en) 2014-03-04 2016-05-31 International Business Machines Corporation Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator
TWI615860B (zh) 2015-04-24 2018-02-21 瑞昱半導體股份有限公司 積體電感
CN105140288B (zh) * 2015-09-11 2018-05-01 电子科技大学 射频ldmos器件
US9966182B2 (en) 2015-11-16 2018-05-08 Globalfoundries Inc. Multi-frequency inductors with low-k dielectric area
CN106783019B (zh) * 2016-12-02 2018-08-28 江苏贺鸿电子有限公司 一种低干扰电感结构
CN106653568B (zh) * 2016-12-02 2019-04-16 昆山纳尔格信息科技有限公司 一种低干扰电感结构的制造方法
US10510663B2 (en) * 2017-03-30 2019-12-17 Globalfoundries Inc. Transistor structures having electrically floating metal layer between active metal lines
US11011459B1 (en) * 2020-02-06 2021-05-18 Qualcomm Incorporated Back-end-of-line (BEOL) on-chip sensor

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Also Published As

Publication number Publication date
KR100522655B1 (ko) 2005-10-19
CN1484838A (zh) 2004-03-24
JP3777159B2 (ja) 2006-05-24
US6762088B2 (en) 2004-07-13
US20030096435A1 (en) 2003-05-22
KR20030074751A (ko) 2003-09-19
TW548798B (en) 2003-08-21
ATE463828T1 (de) 2010-04-15
CN1295717C (zh) 2007-01-17
EP1358661A1 (de) 2003-11-05
US20020109204A1 (en) 2002-08-15
EP1358661B1 (de) 2010-04-07
JP2004526311A (ja) 2004-08-26
WO2002065490A1 (en) 2002-08-22
US6534843B2 (en) 2003-03-18

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Legal Events

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8364 No opposition during term of opposition