DE60236553D1 - Nichtflüchtiger Speicher mit Blocklöschung - Google Patents

Nichtflüchtiger Speicher mit Blocklöschung

Info

Publication number
DE60236553D1
DE60236553D1 DE60236553T DE60236553T DE60236553D1 DE 60236553 D1 DE60236553 D1 DE 60236553D1 DE 60236553 T DE60236553 T DE 60236553T DE 60236553 T DE60236553 T DE 60236553T DE 60236553 D1 DE60236553 D1 DE 60236553D1
Authority
DE
Germany
Prior art keywords
volatile memory
memory
block erasure
block
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60236553T
Other languages
English (en)
Inventor
Brady L Keays
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60236553D1 publication Critical patent/DE60236553D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously

Landscapes

  • Read Only Memory (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
  • Document Processing Apparatus (AREA)
DE60236553T 2001-08-24 2002-08-23 Nichtflüchtiger Speicher mit Blocklöschung Expired - Lifetime DE60236553D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/939,394 US6614695B2 (en) 2001-08-24 2001-08-24 Non-volatile memory with block erase

Publications (1)

Publication Number Publication Date
DE60236553D1 true DE60236553D1 (de) 2010-07-08

Family

ID=25473108

Family Applications (3)

Application Number Title Priority Date Filing Date
DE60236554T Expired - Lifetime DE60236554D1 (de) 2001-08-24 2002-08-23 Nichtflüchtiger Speicher
DE60213620T Expired - Lifetime DE60213620T2 (de) 2001-08-24 2002-08-23 Nichtflüchtiger speicher mit blocklöschung
DE60236553T Expired - Lifetime DE60236553D1 (de) 2001-08-24 2002-08-23 Nichtflüchtiger Speicher mit Blocklöschung

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE60236554T Expired - Lifetime DE60236554D1 (de) 2001-08-24 2002-08-23 Nichtflüchtiger Speicher
DE60213620T Expired - Lifetime DE60213620T2 (de) 2001-08-24 2002-08-23 Nichtflüchtiger speicher mit blocklöschung

Country Status (9)

Country Link
US (8) US6614695B2 (de)
EP (3) EP1622164B1 (de)
JP (1) JP3860573B2 (de)
KR (1) KR100581306B1 (de)
CN (1) CN1575496B (de)
AT (3) ATE469422T1 (de)
AU (1) AU2002332653A1 (de)
DE (3) DE60236554D1 (de)
WO (1) WO2003019565A2 (de)

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US7839690B2 (en) * 2008-12-11 2010-11-23 Sandisk Corporation Adaptive erase and soft programming for memory
KR101703106B1 (ko) * 2011-01-04 2017-02-06 삼성전자주식회사 부분-이레이즈 동작을 수행할 수 있는 비휘발성 메모리 장치와 상기 비휘발성 메모리 장치를 포함하는 장치들
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8830756B2 (en) * 2013-01-23 2014-09-09 Freescale Semiconductor, Inc. Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory
US8879330B1 (en) * 2013-04-30 2014-11-04 Freescale Semiconductor, Inc. Non-volatile memory (NVM) with variable verify operations
CN103559911A (zh) * 2013-10-13 2014-02-05 广东博观科技有限公司 一种提高芯片周期耐久性的方法
US9728278B2 (en) 2014-10-24 2017-08-08 Micron Technology, Inc. Threshold voltage margin analysis
US9679658B2 (en) * 2015-06-26 2017-06-13 Intel Corporation Method and apparatus for reducing read latency for a block erasable non-volatile memory
KR102336659B1 (ko) 2017-09-05 2021-12-07 삼성전자 주식회사 데이터 신뢰성을 향상시키기 위한 메모리 동작을 수행하는 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 장치의 동작 방법
US11232841B2 (en) 2017-09-05 2022-01-25 Samsung Electronics Co., Ltd. Methods of operating memory devices based on sub-block positions and related memory system
CN110908593B (zh) * 2018-09-17 2024-02-20 兆易创新科技集团股份有限公司 一种存储空间擦除方法、装置、存储设备及存储介质
US11068165B2 (en) 2019-06-27 2021-07-20 Western Digital Technologies, Inc. Non-volatile memory data write management
CN110970076B (zh) * 2019-12-02 2022-03-18 武汉新芯集成电路制造有限公司 存储结构及其擦除方法
CN111785316B (zh) * 2020-06-29 2021-03-05 深圳市芯天下技术有限公司 一种克服擦除干扰的方法、系统、存储介质和终端

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Also Published As

Publication number Publication date
US20030072182A1 (en) 2003-04-17
US20030039145A1 (en) 2003-02-27
KR100581306B1 (ko) 2006-05-22
DE60213620T2 (de) 2007-08-09
US20030072180A1 (en) 2003-04-17
EP1622165B1 (de) 2010-05-26
US20030072181A1 (en) 2003-04-17
WO2003019565A9 (en) 2004-04-22
ATE469421T1 (de) 2010-06-15
US20030067810A1 (en) 2003-04-10
US6603682B2 (en) 2003-08-05
EP1622165A3 (de) 2007-08-29
US6646927B2 (en) 2003-11-11
EP1622164B1 (de) 2010-05-26
US6618294B2 (en) 2003-09-09
US6646926B2 (en) 2003-11-11
WO2003019565A2 (en) 2003-03-06
US20030072178A1 (en) 2003-04-17
DE60236554D1 (de) 2010-07-08
EP1425758B1 (de) 2006-08-02
ATE335277T1 (de) 2006-08-15
US6654292B2 (en) 2003-11-25
JP2005501368A (ja) 2005-01-13
ATE469422T1 (de) 2010-06-15
EP1622164A2 (de) 2006-02-01
AU2002332653A1 (en) 2003-03-10
CN1575496B (zh) 2010-05-05
US6650571B2 (en) 2003-11-18
JP3860573B2 (ja) 2006-12-20
KR20040029022A (ko) 2004-04-03
US20030072179A1 (en) 2003-04-17
EP1425758A2 (de) 2004-06-09
EP1622165A2 (de) 2006-02-01
CN1575496A (zh) 2005-02-02
US6618293B2 (en) 2003-09-09
WO2003019565A3 (en) 2004-03-18
DE60213620D1 (de) 2006-09-14
US20030067811A1 (en) 2003-04-10
US6614695B2 (en) 2003-09-02
EP1622164A3 (de) 2007-08-29

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