DE60238275D1 - Asymmetrisch verteilter bragg-reflektor für oberflächenemittierende-laser mit vertikalem resonator - Google Patents

Asymmetrisch verteilter bragg-reflektor für oberflächenemittierende-laser mit vertikalem resonator

Info

Publication number
DE60238275D1
DE60238275D1 DE60238275T DE60238275T DE60238275D1 DE 60238275 D1 DE60238275 D1 DE 60238275D1 DE 60238275 T DE60238275 T DE 60238275T DE 60238275 T DE60238275 T DE 60238275T DE 60238275 D1 DE60238275 D1 DE 60238275D1
Authority
DE
Germany
Prior art keywords
different
transition
dbr
transition regions
surface emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60238275T
Other languages
English (en)
Inventor
Samuel S Villareal
Ralph H Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Finisar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Finisar Corp filed Critical Finisar Corp
Application granted granted Critical
Publication of DE60238275D1 publication Critical patent/DE60238275D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
DE60238275T 2001-12-28 2002-12-13 Asymmetrisch verteilter bragg-reflektor für oberflächenemittierende-laser mit vertikalem resonator Expired - Lifetime DE60238275D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/028,435 US6850548B2 (en) 2001-12-28 2001-12-28 Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers
PCT/US2002/039825 WO2003058774A2 (en) 2001-12-28 2002-12-13 Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers

Publications (1)

Publication Number Publication Date
DE60238275D1 true DE60238275D1 (de) 2010-12-23

Family

ID=21843427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60238275T Expired - Lifetime DE60238275D1 (de) 2001-12-28 2002-12-13 Asymmetrisch verteilter bragg-reflektor für oberflächenemittierende-laser mit vertikalem resonator

Country Status (9)

Country Link
US (1) US6850548B2 (de)
EP (1) EP1459417B1 (de)
JP (1) JP4177262B2 (de)
KR (1) KR100558320B1 (de)
CN (1) CN1613170A (de)
AT (1) ATE488039T1 (de)
DE (1) DE60238275D1 (de)
TW (1) TWI237935B (de)
WO (1) WO2003058774A2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6975663B2 (en) * 2001-02-26 2005-12-13 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode
US7245647B2 (en) * 1999-10-28 2007-07-17 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode
US7590159B2 (en) * 2001-02-26 2009-09-15 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7829912B2 (en) 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US8815617B2 (en) * 2004-10-01 2014-08-26 Finisar Corporation Passivation of VCSEL sidewalls
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7826506B2 (en) 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
KR100737609B1 (ko) * 2005-09-29 2007-07-10 엘지전자 주식회사 수직 외부 공진형 표면 방출 광 펌핑 반도체 레이저 및 그제조방법
JP4300245B2 (ja) * 2006-08-25 2009-07-22 キヤノン株式会社 多層膜反射鏡を備えた光学素子、面発光レーザ
US8527939B2 (en) * 2006-09-14 2013-09-03 Sap Ag GUI modeling of knowledge base in a modeling environment
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
US8213474B2 (en) * 2007-12-21 2012-07-03 Finisar Corporation Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption
CN102611000B (zh) * 2012-03-23 2013-09-25 中国科学院长春光学精密机械与物理研究所 高效率非对称光场分布垂直腔面发射半导体激光器
US10230215B2 (en) 2016-08-08 2019-03-12 Finisar Corporation Etched planarized VCSEL
CN110021875B (zh) * 2018-01-09 2022-05-13 苏州乐琻半导体有限公司 表面发射激光器器件和包括其的发光器件
TWI827578B (zh) * 2018-01-18 2024-01-01 英商Ｉｑｅ有限公司 用於雷射應用之多孔分佈式布拉格反射器
EP3540879A1 (de) * 2018-03-15 2019-09-18 Koninklijke Philips N.V. Vertikalresonator-oberflächenemissionslaservorrichtung mit integriertem tunnelübergang

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170407A (en) 1991-10-11 1992-12-08 At&T Bell Laboratories Elimination of heterojunction band discontinuities
US5745515A (en) * 1996-07-18 1998-04-28 Honeywell Inc. Self-limiting intrinsically eye-safe laser utilizing an increasing absorption layer
US5764671A (en) * 1996-10-21 1998-06-09 Motorola, Inc. VCSEL with selective oxide transition regions
US5848086A (en) * 1996-12-09 1998-12-08 Motorola, Inc. Electrically confined VCSEL
JP3713956B2 (ja) * 1998-05-29 2005-11-09 富士ゼロックス株式会社 面発光型半導体レーザ素子の製造方法
US6301281B1 (en) 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
US6744805B2 (en) * 2000-04-05 2004-06-01 Nortel Networks Limited Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers
US6611543B2 (en) * 2000-12-23 2003-08-26 Applied Optoelectronics, Inc. Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same
US6693933B2 (en) * 2001-03-15 2004-02-17 Honeywell International Inc. Vertical cavity master oscillator power amplifier
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser

Also Published As

Publication number Publication date
US6850548B2 (en) 2005-02-01
KR100558320B1 (ko) 2006-03-10
WO2003058774A2 (en) 2003-07-17
JP4177262B2 (ja) 2008-11-05
TWI237935B (en) 2005-08-11
KR20040093676A (ko) 2004-11-06
US20030123513A1 (en) 2003-07-03
ATE488039T1 (de) 2010-11-15
JP2005514796A (ja) 2005-05-19
EP1459417B1 (de) 2010-11-10
CN1613170A (zh) 2005-05-04
WO2003058774A3 (en) 2004-03-25
TW200301605A (en) 2003-07-01
EP1459417A2 (de) 2004-09-22

Similar Documents

Publication Publication Date Title
ATE488039T1 (de) Asymmetrisch verteilter bragg-reflektor für oberflächenemittierende-laser mit vertikalem resonator
DE69231662D1 (de) Oberflächenemittierender laser für rotes licht
CN101355233B (zh) 表面发光半导体激光元件
EP1892807B1 (de) DBR für einen VCSEL mit Schichten ungleicher optischer Dicke
WO2005054914A2 (en) Coupled cavity interference filters with intermediate absorbing layer for single frequency operation of optoelectronic devices
EP1780849A4 (de) Oberflächenemissions-laserdiode und herstellungsverfahren dafür
US20080267236A1 (en) Laser diode with a grating layer
WO2005086301A1 (ja) 面発光レーザ素子およびそれを用いたレーザモジュール
CN1879270B (zh) 半导体激光器设备
CN104078843A (zh) 具有窄激光发射角度的多模垂直腔面发射激光器
US8238398B2 (en) Diode laser, integral diode laser, and an integral semiconductor optical amplifier
US20070091953A1 (en) Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes
KR20080102249A (ko) 반도체 레이저 장치
US8401046B2 (en) Multibeam coherent laser diode source (embodiments)
US20080080582A1 (en) Optically Pumped Semiconductor Device
US20080192789A1 (en) Injector Laser
US20180183210A1 (en) Surface-emitting semiconductor laser
JP2003332615A (ja) 半導体発光素子
JPH07162072A (ja) 半導体異種構造レーザー
US20090213893A1 (en) End pumping vertical external cavity surface emitting laser
JPH06350190A (ja) 波長制御型面発光半導体レーザ
JP2006302955A (ja) 面発光半導体レーザ
CN111224318A (zh) 一种垂直外腔面发射激光器
Vainilovich et al. Microchip laser converter based on InGaN laser diode and (Zn) CdSe quantum dot heterostructure
JPH05259508A (ja) 発光素子