DE60307025D1 - Halbleiterlaserdiode mit Stegwellenleiter - Google Patents

Halbleiterlaserdiode mit Stegwellenleiter

Info

Publication number
DE60307025D1
DE60307025D1 DE60307025T DE60307025T DE60307025D1 DE 60307025 D1 DE60307025 D1 DE 60307025D1 DE 60307025 T DE60307025 T DE 60307025T DE 60307025 T DE60307025 T DE 60307025T DE 60307025 D1 DE60307025 D1 DE 60307025D1
Authority
DE
Germany
Prior art keywords
ridge
insulating film
laser diode
protective insulating
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60307025T
Other languages
English (en)
Other versions
DE60307025T2 (de
Inventor
Hiroaki Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of DE60307025D1 publication Critical patent/DE60307025D1/de
Application granted granted Critical
Publication of DE60307025T2 publication Critical patent/DE60307025T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05023—Disposition the whole internal layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/1701—Structure
    • H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
DE60307025T 2002-11-25 2003-11-24 Halbleiterlaserdiode mit Stegwellenleiter Expired - Lifetime DE60307025T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002340625 2002-11-25
JP2002340625 2002-11-25
JP2003305555 2003-08-28
JP2003305555 2003-08-28

Publications (2)

Publication Number Publication Date
DE60307025D1 true DE60307025D1 (de) 2006-09-07
DE60307025T2 DE60307025T2 (de) 2007-02-22

Family

ID=32232733

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60307025T Expired - Lifetime DE60307025T2 (de) 2002-11-25 2003-11-24 Halbleiterlaserdiode mit Stegwellenleiter

Country Status (7)

Country Link
US (1) US7072374B2 (de)
EP (1) EP1422798B1 (de)
KR (1) KR100599362B1 (de)
CN (2) CN2724266Y (de)
AT (1) ATE334492T1 (de)
DE (1) DE60307025T2 (de)
TW (1) TWI303909B (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI303909B (en) * 2002-11-25 2008-12-01 Nichia Corp Ridge waveguide semiconductor laser diode
KR100964399B1 (ko) * 2003-03-08 2010-06-17 삼성전자주식회사 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체
KR100744933B1 (ko) * 2003-10-13 2007-08-01 삼성전기주식회사 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법
JP4580633B2 (ja) * 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法
CN100449891C (zh) * 2003-12-15 2009-01-07 古河电气工业株式会社 制造半导体器件的方法
US9166130B2 (en) * 2012-10-24 2015-10-20 Spectrasensors, Inc. Solderless mounting for semiconductor lasers
JP4704703B2 (ja) * 2004-07-07 2011-06-22 株式会社リコー アレイ型半導体レーザ装置
JP4956928B2 (ja) * 2004-09-28 2012-06-20 日亜化学工業株式会社 半導体装置
US8802465B2 (en) 2005-01-11 2014-08-12 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
US8318519B2 (en) 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JP2006269581A (ja) * 2005-03-23 2006-10-05 Mitsubishi Electric Corp 半導体レーザ装置
JP2006303299A (ja) * 2005-04-22 2006-11-02 Sharp Corp 半導体レーザ
KR101100425B1 (ko) * 2005-05-07 2011-12-30 삼성전자주식회사 반도체 레이저 다이오드 및 그 제조방법
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
JP2007151807A (ja) * 2005-12-05 2007-06-21 Univ Meijo 半導体発光素子による光線治療方法、及び半導体発光素子による光線治療システム
JP4535997B2 (ja) * 2005-12-09 2010-09-01 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
US20090200568A1 (en) * 2006-05-02 2009-08-13 Hideyoshi Horie Semiconductor light-emitting device
JP5150149B2 (ja) * 2007-07-03 2013-02-20 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP4933370B2 (ja) * 2007-07-17 2012-05-16 株式会社リコー アレイ型半導体レーザ装置の組み立て方法
JP2009188273A (ja) * 2008-02-07 2009-08-20 Rohm Co Ltd ジャンクションダウン型の光半導体素子及び光半導体装置
JP4697488B2 (ja) * 2008-08-22 2011-06-08 ソニー株式会社 マルチビーム半導体レーザ
JP2010267731A (ja) * 2009-05-13 2010-11-25 Panasonic Corp 窒化物半導体レーザ装置
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
WO2011065208A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101047652B1 (ko) 2009-12-18 2011-07-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
US9368934B2 (en) 2011-02-14 2016-06-14 Spectrasensors, Inc. Semiconductor laser mounting for improved frequency stability
US9166364B2 (en) * 2011-02-14 2015-10-20 Spectrasensors, Inc. Semiconductor laser mounting with intact diffusion barrier layer
CN105490161B (zh) * 2011-07-05 2022-12-30 日亚化学工业株式会社 半导体激光元件
JP6160141B2 (ja) * 2012-03-22 2017-07-12 日亜化学工業株式会社 半導体レーザ装置
CN102882124B (zh) * 2012-10-11 2014-08-06 长春理工大学 一种适用于倒焊装的半导体激光器芯片结构
US9601557B2 (en) * 2012-11-16 2017-03-21 Apple Inc. Flexible display
EP2741381B1 (de) 2012-12-06 2020-05-06 Nichia Corporation Halbleiterlaserelement
US9600112B2 (en) 2014-10-10 2017-03-21 Apple Inc. Signal trace patterns for flexible substrates
DE102015119146A1 (de) * 2015-11-06 2017-05-11 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen eines Halbleiterlasers sowie Wafer
US10892597B2 (en) * 2016-07-14 2021-01-12 Panasonic Corporation Nitride semiconductor laser and nitride semiconductor laser device
KR102550007B1 (ko) * 2016-11-30 2023-07-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드
KR20180075733A (ko) 2016-12-26 2018-07-05 엘지디스플레이 주식회사 플렉서블 표시장치
DE102016125857B4 (de) 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
KR102544296B1 (ko) * 2018-09-13 2023-06-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 표면발광레이저 소자 및 이를 구비한 표면발광레이저 장치
JP6940572B2 (ja) * 2019-01-29 2021-09-29 シャープ株式会社 窒化物半導体レーザ素子および半導体レーザ装置
CN110518066B (zh) * 2019-08-13 2022-08-02 深圳市矽赫科技有限公司 一种半导体欧姆接触结构
CN110620169B (zh) * 2019-09-10 2020-08-28 北京工业大学 一种基于共振腔的横向电流限制高效率发光二极管
CN111755950A (zh) * 2020-06-30 2020-10-09 中国科学院半导体研究所 电极部分覆盖脊条的dfb激光器
CN112636177B (zh) * 2020-12-18 2022-06-24 中国科学院半导体研究所 改善大功率太赫兹半导体激光器散热的封装结构

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4424527A (en) * 1981-07-31 1984-01-03 Optical Information Systems, Inc. Bonding pad metallization for semiconductor devices
JPH03145178A (ja) * 1989-10-30 1991-06-20 Nec Corp 半導体発光装置とその製造方法
US5436466A (en) * 1992-08-19 1995-07-25 Goldstar Co., Ltd. Semiconductor laser diode
US5429680A (en) * 1993-11-19 1995-07-04 Fuschetti; Dean F. Thermoelectric heat pump
US5559817A (en) * 1994-11-23 1996-09-24 Lucent Technologies Inc. Complaint layer metallization
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
JP3348024B2 (ja) 1998-08-17 2002-11-20 松下電器産業株式会社 半導体レーザ装置
US6590322B2 (en) * 2000-01-07 2003-07-08 The United States Of America As Represented By The Secretary Of The Navy Low gate current field emitter cell and array with vertical thin-film-edge emitter
EP1276186B1 (de) 2000-02-16 2016-12-07 Nichia Corporation Verfahren zur herstellung eines nitrid-halbleiterlaserbauelements
JP2002094181A (ja) * 2000-09-14 2002-03-29 Sony Corp 半導体レーザ素子及びその作製方法
KR100902109B1 (ko) 2001-04-12 2009-06-09 니치아 카가쿠 고교 가부시키가이샤 질화 갈륨계 화합물 반도체 소자
US7255333B2 (en) 2002-08-13 2007-08-14 Itt Manufacturing Enterprises, Inc. Strip diffuser
TWI303909B (en) * 2002-11-25 2008-12-01 Nichia Corp Ridge waveguide semiconductor laser diode

Also Published As

Publication number Publication date
KR100599362B1 (ko) 2006-07-12
CN1503416A (zh) 2004-06-09
TWI303909B (en) 2008-12-01
KR20040045368A (ko) 2004-06-01
CN2724266Y (zh) 2005-09-07
US7072374B2 (en) 2006-07-04
ATE334492T1 (de) 2006-08-15
EP1422798B1 (de) 2006-07-26
TW200415832A (en) 2004-08-16
EP1422798A1 (de) 2004-05-26
CN1272886C (zh) 2006-08-30
DE60307025T2 (de) 2007-02-22
US20040161010A1 (en) 2004-08-19

Similar Documents

Publication Publication Date Title
DE60307025D1 (de) Halbleiterlaserdiode mit Stegwellenleiter
US4864370A (en) Electrical contact for an LED
JP3322300B2 (ja) 窒化ガリウム系半導体発光素子と受光素子
AU2003241280A1 (en) Method of fabricating vertical structure leds
EP1804301A4 (de) Halbleiterelement
TW200620704A (en) Nitride-based compound semiconductor light emitting device
EP0971465A4 (de) Hochleistungsdichtes halbleiterlaser
JP3631359B2 (ja) 窒化物半導体発光素子
CA2085337A1 (en) Buried-type semiconductor laser device
ATE294457T1 (de) Oberflächenemittierender halbleiterlaser
KR100986397B1 (ko) 발광 장치
EP1283574A3 (de) Halbleiterlaserelement
JP3556080B2 (ja) 窒化物半導体素子
JP2000091638A (ja) 窒化ガリウム系化合物半導体発光素子
TW492236B (en) Vertical cavity surface emitting laser diode
US9755109B2 (en) Light-emitting device
KR970024394A (ko) 광자 리사이클링을 갖는 극소강 발광 다이오드(Microcavity LED with photon recycling)
JP2000299477A5 (de)
EP0848466A3 (de) Halbleiterlichtquelle und faseroptisches Übertragungssystem
JPH0770742B2 (ja) 半導体装置
WO2009034928A1 (ja) 半導体発光素子及び半導体発光装置
US20220077365A1 (en) Light-emitting element
JP2008078525A5 (de)
EP0828324A3 (de) Halbleiterlaservorrichtung
EP0867949A3 (de) Lichtemittierende Halbleitervorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition