DE60309190D1 - Magnetelement mit spintransfer und mram-bauelement mit dem magnetelement - Google Patents

Magnetelement mit spintransfer und mram-bauelement mit dem magnetelement

Info

Publication number
DE60309190D1
DE60309190D1 DE60309190T DE60309190T DE60309190D1 DE 60309190 D1 DE60309190 D1 DE 60309190D1 DE 60309190 T DE60309190 T DE 60309190T DE 60309190 T DE60309190 T DE 60309190T DE 60309190 D1 DE60309190 D1 DE 60309190D1
Authority
DE
Germany
Prior art keywords
magnetic element
spintransfer
mram
magnetic
mram element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60309190T
Other languages
English (en)
Other versions
DE60309190T2 (de
Inventor
Yiming Huai
P Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Grandis Inc
Original Assignee
Grandis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Grandis Inc filed Critical Grandis Inc
Publication of DE60309190D1 publication Critical patent/DE60309190D1/de
Application granted granted Critical
Publication of DE60309190T2 publication Critical patent/DE60309190T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
DE60309190T 2002-08-06 2003-08-06 Magnetelement mit spintransfer und mram-bauelement mit dem magnetelement Expired - Lifetime DE60309190T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US213537 2002-08-06
US10/213,537 US6714444B2 (en) 2002-08-06 2002-08-06 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
PCT/US2003/024627 WO2004013861A2 (en) 2002-08-06 2003-08-06 Magnetic element utilizing spin transfer and an mram device using the magnetic element

Publications (2)

Publication Number Publication Date
DE60309190D1 true DE60309190D1 (de) 2006-11-30
DE60309190T2 DE60309190T2 (de) 2007-08-30

Family

ID=31494472

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60309190T Expired - Lifetime DE60309190T2 (de) 2002-08-06 2003-08-06 Magnetelement mit spintransfer und mram-bauelement mit dem magnetelement

Country Status (6)

Country Link
US (3) US6714444B2 (de)
EP (1) EP1552526B1 (de)
JP (1) JP2005535125A (de)
AU (1) AU2003258117A1 (de)
DE (1) DE60309190T2 (de)
WO (1) WO2004013861A2 (de)

Families Citing this family (260)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100650534B1 (ko) * 2000-12-21 2006-11-27 후지쯔 가부시끼가이샤 자기 저항 효과 소자, 자기 헤드 및 이것을 사용하는 자기재생 장치
JP2003248909A (ja) * 2002-02-27 2003-09-05 Hitachi Ltd 磁気ヘッド及びそれを備える磁気記録再生装置、並びに磁気メモリ
US7390584B2 (en) * 2002-03-27 2008-06-24 Nve Corporation Spin dependent tunneling devices having reduced topological coupling
US6714444B2 (en) * 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6881993B2 (en) * 2002-08-28 2005-04-19 Micron Technology, Inc. Device having reduced diffusion through ferromagnetic materials
US6844999B2 (en) * 2002-09-10 2005-01-18 Headway Technologies, Inc. Boron doped CoFe for GMR free layer
US6838740B2 (en) * 2002-09-27 2005-01-04 Grandis, Inc. Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6958927B1 (en) 2002-10-09 2005-10-25 Grandis Inc. Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
CN101114694A (zh) * 2002-11-26 2008-01-30 株式会社东芝 磁单元和磁存储器
US7190611B2 (en) * 2003-01-07 2007-03-13 Grandis, Inc. Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US6847547B2 (en) * 2003-02-28 2005-01-25 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
KR20040083934A (ko) * 2003-03-25 2004-10-06 주식회사 하이닉스반도체 마그네틱 램의 형성방법
US6900489B2 (en) * 2003-04-29 2005-05-31 Micron Technology, Inc. Reducing the effects of néel coupling in MRAM structures
US6865109B2 (en) * 2003-06-06 2005-03-08 Seagate Technology Llc Magnetic random access memory having flux closure for the free layer and spin transfer write mechanism
US7027319B2 (en) * 2003-06-19 2006-04-11 Hewlett-Packard Development Company, L.P. Retrieving data stored in a magnetic integrated memory
US6956763B2 (en) * 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
JP3824600B2 (ja) * 2003-07-30 2006-09-20 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US7911832B2 (en) 2003-08-19 2011-03-22 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7573737B2 (en) * 2003-08-19 2009-08-11 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US6980469B2 (en) * 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US8755222B2 (en) 2003-08-19 2014-06-17 New York University Bipolar spin-transfer switching
JP2005109263A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 磁性体素子及磁気メモリ
US7053430B2 (en) * 2003-11-12 2006-05-30 Honeywell International Inc. Antiferromagnetic stabilized storage layers in GMRAM storage devices
US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
US7242045B2 (en) * 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US6967863B2 (en) 2004-02-25 2005-11-22 Grandis, Inc. Perpendicular magnetization magnetic element utilizing spin transfer
JP4575101B2 (ja) * 2004-09-30 2010-11-04 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US7372116B2 (en) * 2004-06-16 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
US7446986B2 (en) * 2004-08-31 2008-11-04 Hitachi Global Storage Technologies Netherlands B.V. Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling
US7369427B2 (en) 2004-09-09 2008-05-06 Grandis, Inc. Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
JP2006093432A (ja) * 2004-09-24 2006-04-06 Sony Corp 記憶素子及びメモリ
WO2006044244A2 (en) * 2004-10-12 2006-04-27 Nve Corporataion Thermomagnetically assisted spin-momentum-transfer switching memory
US20060128038A1 (en) * 2004-12-06 2006-06-15 Mahendra Pakala Method and system for providing a highly textured magnetoresistance element and magnetic memory
US7241631B2 (en) * 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
JP2006196687A (ja) * 2005-01-13 2006-07-27 Tdk Corp 磁気メモリ
JP2006196683A (ja) * 2005-01-13 2006-07-27 Tdk Corp 磁気抵抗効果素子及び磁気メモリ
JP4693450B2 (ja) * 2005-03-22 2011-06-01 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP2006269885A (ja) * 2005-03-25 2006-10-05 Sony Corp スピン注入型磁気抵抗効果素子
US7190612B2 (en) * 2005-03-31 2007-03-13 Grandis, Inc. Circuitry for use in current switching a magnetic cell
US7376006B2 (en) * 2005-05-13 2008-05-20 International Business Machines Corporation Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
JP2007012696A (ja) * 2005-06-28 2007-01-18 Tdk Corp 磁気メモリ
JP4504273B2 (ja) * 2005-07-06 2010-07-14 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US20070019337A1 (en) * 2005-07-19 2007-01-25 Dmytro Apalkov Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements
JP2007027575A (ja) * 2005-07-20 2007-02-01 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2007048790A (ja) * 2005-08-05 2007-02-22 Sony Corp 記憶素子及びメモリ
US7224601B2 (en) 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
US7859034B2 (en) * 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
US7973349B2 (en) * 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
US7777261B2 (en) 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
JP2007103471A (ja) * 2005-09-30 2007-04-19 Sony Corp 記憶素子及びメモリ
JP4883982B2 (ja) * 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7301801B2 (en) * 2005-10-28 2007-11-27 International Business Machines Corporation Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
US20070103818A1 (en) * 2005-11-07 2007-05-10 Tdk Corporation Variable resistance element and method of using the same
JP4779608B2 (ja) * 2005-11-30 2011-09-28 Ｔｄｋ株式会社 磁気メモリ
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
US20070153432A1 (en) * 2005-12-29 2007-07-05 Tdk Corporation Magnetic head
JP4284326B2 (ja) * 2006-01-12 2009-06-24 株式会社東芝 磁気抵抗ランダムアクセスメモリおよびその書き込み制御方法
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US8363457B2 (en) * 2006-02-25 2013-01-29 Avalanche Technology, Inc. Magnetic memory sensing circuit
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US20070246787A1 (en) * 2006-03-29 2007-10-25 Lien-Chang Wang On-plug magnetic tunnel junction devices based on spin torque transfer switching
EP1863034B1 (de) * 2006-05-04 2011-01-05 Hitachi, Ltd. Magnetspeichervorrichtung
US7760474B1 (en) 2006-07-14 2010-07-20 Grandis, Inc. Magnetic element utilizing free layer engineering
US7663848B1 (en) 2006-07-14 2010-02-16 Grandis, Inc. Magnetic memories utilizing a magnetic element having an engineered free layer
US7532505B1 (en) 2006-07-17 2009-05-12 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
US7502249B1 (en) * 2006-07-17 2009-03-10 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
US7851840B2 (en) * 2006-09-13 2010-12-14 Grandis Inc. Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
JP5165898B2 (ja) * 2007-01-17 2013-03-21 株式会社東芝 磁気ランダムアクセスメモリ及びその書き込み方法
US8211557B2 (en) * 2007-01-31 2012-07-03 Carnegie Mellon University Binary anisotropy media
US7692954B2 (en) * 2007-03-12 2010-04-06 International Business Machines Corporation Apparatus and method for integrating nonvolatile memory capability within SRAM devices
US20080229269A1 (en) * 2007-03-12 2008-09-18 International Business Machines Corporation Design structure for integrating nonvolatile memory capability within sram devices
US7480173B2 (en) * 2007-03-13 2009-01-20 Magic Technologies, Inc. Spin transfer MRAM device with novel magnetic free layer
US7859069B2 (en) * 2007-03-16 2010-12-28 Seagate Technology Llc Magnetic storage element with storage layer magnetization directed for increased responsiveness to spin polarized current
US8058697B2 (en) 2007-03-26 2011-11-15 Magic Technologies, Inc. Spin transfer MRAM device with novel magnetic synthetic free layer
US7629182B2 (en) * 2007-04-17 2009-12-08 Freescale Semiconductor, Inc. Space and process efficient MRAM and method
US7605437B2 (en) * 2007-04-18 2009-10-20 Everspin Technologies, Inc. Spin-transfer MRAM structure and methods
US7486552B2 (en) * 2007-05-21 2009-02-03 Grandis, Inc. Method and system for providing a spin transfer device with improved switching characteristics
US7573736B2 (en) * 2007-05-22 2009-08-11 Taiwan Semiconductor Manufacturing Company Spin torque transfer MRAM device
WO2008154519A1 (en) * 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
US7688616B2 (en) * 2007-06-18 2010-03-30 Taiwan Semicondcutor Manufacturing Company, Ltd. Device and method of programming a magnetic memory element
US7957179B2 (en) * 2007-06-27 2011-06-07 Grandis Inc. Magnetic shielding in magnetic multilayer structures
US7750421B2 (en) * 2007-07-23 2010-07-06 Magic Technologies, Inc. High performance MTJ element for STT-RAM and method for making the same
US20090046502A1 (en) * 2007-08-16 2009-02-19 Northern Lights Semiconductor Corp. Metal Magnetic Memory Cell
US7982275B2 (en) * 2007-08-22 2011-07-19 Grandis Inc. Magnetic element having low saturation magnetization
US7932571B2 (en) * 2007-10-11 2011-04-26 Everspin Technologies, Inc. Magnetic element having reduced current density
US8100228B2 (en) * 2007-10-12 2012-01-24 D B Industries, Inc. Portable anchorage assembly
US9812184B2 (en) 2007-10-31 2017-11-07 New York University Current induced spin-momentum transfer stack with dual insulating layers
US8004881B2 (en) * 2007-12-19 2011-08-23 Qualcomm Incorporated Magnetic tunnel junction device with separate read and write paths
JP2009194210A (ja) * 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP5455313B2 (ja) * 2008-02-21 2014-03-26 株式会社東芝 磁気記憶素子及び磁気記憶装置
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
US8069492B2 (en) * 2008-03-31 2011-11-29 Seagate Technology Llc Spin-torque probe microscope
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US7760542B2 (en) 2008-04-21 2010-07-20 Seagate Technology Llc Spin-torque memory with unidirectional write scheme
US7999336B2 (en) * 2008-04-24 2011-08-16 Seagate Technology Llc ST-RAM magnetic element configurations to reduce switching current
US7852663B2 (en) * 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
US7855911B2 (en) * 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
US20090303779A1 (en) * 2008-06-05 2009-12-10 Young-Shying Chen Spin Torque Transfer MTJ Devices with High Thermal Stability and Low Write Currents
US8233319B2 (en) * 2008-07-18 2012-07-31 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US7804709B2 (en) * 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
US8054677B2 (en) 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US8223532B2 (en) 2008-08-07 2012-07-17 Seagate Technology Llc Magnetic field assisted STRAM cells
US7935435B2 (en) * 2008-08-08 2011-05-03 Seagate Technology Llc Magnetic memory cell construction
US7881098B2 (en) * 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US20100053822A1 (en) * 2008-08-28 2010-03-04 Seagate Technology Llc Stram cells with ampere field assisted switching
US7894248B2 (en) * 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
US8482966B2 (en) * 2008-09-24 2013-07-09 Qualcomm Incorporated Magnetic element utilizing protective sidewall passivation
US7940551B2 (en) * 2008-09-29 2011-05-10 Seagate Technology, Llc STRAM with electronically reflective insulative spacer
US7985994B2 (en) 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
US7826256B2 (en) * 2008-09-29 2010-11-02 Seagate Technology Llc STRAM with compensation element
US7876603B2 (en) * 2008-09-30 2011-01-25 Micron Technology, Inc. Spin current generator for STT-MRAM or other spintronics applications
US7746687B2 (en) * 2008-09-30 2010-06-29 Seagate Technology, Llc Thermally assisted multi-bit MRAM
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US7933146B2 (en) * 2008-10-08 2011-04-26 Seagate Technology Llc Electronic devices utilizing spin torque transfer to flip magnetic orientation
US7933137B2 (en) * 2008-10-08 2011-04-26 Seagate Teachnology Llc Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures
US8487390B2 (en) * 2008-10-08 2013-07-16 Seagate Technology Llc Memory cell with stress-induced anisotropy
US8039913B2 (en) * 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US7880209B2 (en) * 2008-10-09 2011-02-01 Seagate Technology Llc MRAM cells including coupled free ferromagnetic layers for stabilization
US8089132B2 (en) 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8217478B2 (en) 2008-10-10 2012-07-10 Seagate Technology Llc Magnetic stack with oxide to reduce switching current
US20100091564A1 (en) * 2008-10-10 2010-04-15 Seagate Technology Llc Magnetic stack having reduced switching current
US20100102405A1 (en) * 2008-10-27 2010-04-29 Seagate Technology Llc St-ram employing a spin filter
US9165625B2 (en) * 2008-10-30 2015-10-20 Seagate Technology Llc ST-RAM cells with perpendicular anisotropy
US8045366B2 (en) * 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) * 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) * 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
US7940600B2 (en) * 2008-12-02 2011-05-10 Seagate Technology Llc Non-volatile memory with stray magnetic field compensation
US7859892B2 (en) 2008-12-03 2010-12-28 Seagate Technology Llc Magnetic random access memory with dual spin torque reference layers
US7826259B2 (en) * 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
US8194438B2 (en) * 2009-02-12 2012-06-05 Seagate Technology Llc nvSRAM having variable magnetic resistors
US8053255B2 (en) * 2009-03-03 2011-11-08 Seagate Technology Llc STRAM with compensation element and method of making the same
US20100254174A1 (en) * 2009-04-02 2010-10-07 Seagate Technology Llc Resistive Sense Memory with Complementary Programmable Recording Layers
US7936598B2 (en) * 2009-04-28 2011-05-03 Seagate Technology Magnetic stack having assist layer
US20100315869A1 (en) * 2009-06-15 2010-12-16 Magic Technologies, Inc. Spin torque transfer MRAM design with low switching current
US20100320550A1 (en) * 2009-06-23 2010-12-23 International Business Machines Corporation Spin-Torque Magnetoresistive Structures with Bilayer Free Layer
US8183653B2 (en) 2009-07-13 2012-05-22 Seagate Technology Llc Magnetic tunnel junction having coherent tunneling structure
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
US7999337B2 (en) * 2009-07-13 2011-08-16 Seagate Technology Llc Static magnetic field assisted resistive sense element
US10446209B2 (en) 2009-08-10 2019-10-15 Samsung Semiconductor Inc. Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
US8913350B2 (en) * 2009-08-10 2014-12-16 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
US8422285B2 (en) * 2009-10-30 2013-04-16 Grandis, Inc. Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
US9130151B2 (en) 2010-01-11 2015-09-08 Samsung Electronics Co., Ltd. Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
US8254162B2 (en) 2010-01-11 2012-08-28 Grandis, Inc. Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
US8891290B2 (en) * 2010-03-17 2014-11-18 Samsung Electronics Co., Ltd. Method and system for providing inverted dual magnetic tunneling junction elements
JP5150673B2 (ja) * 2010-03-19 2013-02-20 株式会社東芝 スピンメモリおよびスピントランジスタ
US8411497B2 (en) 2010-05-05 2013-04-02 Grandis, Inc. Method and system for providing a magnetic field aligned spin transfer torque random access memory
US8546896B2 (en) 2010-07-16 2013-10-01 Grandis, Inc. Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements
US8374048B2 (en) 2010-08-11 2013-02-12 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy
US9224941B2 (en) 2010-08-31 2015-12-29 City University Of Hong Kong System with magnetically stable states and method for asserting magnetically stable state
US8300454B2 (en) * 2010-09-17 2012-10-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8422277B2 (en) 2010-11-04 2013-04-16 Seagate Technology Llc Field assisted switching of a magnetic memory element
US8508973B2 (en) 2010-11-16 2013-08-13 Seagate Technology Llc Method of switching out-of-plane magnetic tunnel junction cells
US8405171B2 (en) 2010-11-16 2013-03-26 Seagate Technology Llc Memory cell with phonon-blocking insulating layer
US8830734B2 (en) 2010-11-19 2014-09-09 Seagate Technology Llc Using a nearby cell to provide field assisted switching in a magnetic memory array
US8796794B2 (en) 2010-12-17 2014-08-05 Intel Corporation Write current reduction in spin transfer torque memory devices
US9478730B2 (en) 2010-12-31 2016-10-25 Samsung Electronics Co., Ltd. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US8432009B2 (en) 2010-12-31 2013-04-30 Grandis, Inc. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
JP2012160671A (ja) * 2011-02-02 2012-08-23 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
EP2506265B1 (de) * 2011-03-28 2019-06-05 Crocus Technology Magnetische Zufallszugriff-Speicherzelle mit Doppelverbindung für ternäre inhaltsadressierbare Speicheranwendungen
US8686484B2 (en) 2011-06-10 2014-04-01 Everspin Technologies, Inc. Spin-torque magnetoresistive memory element and method of fabricating same
US8766383B2 (en) 2011-07-07 2014-07-01 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction using half metallic ferromagnets
US8829901B2 (en) * 2011-11-04 2014-09-09 Honeywell International Inc. Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields
EP2608208B1 (de) * 2011-12-22 2015-02-11 Crocus Technology S.A. Selbstbezogene MRAM-Zelle und Verfahren zum Beschreiben der Zelle unter Verwendung eines SST-Vorgangs
US9093639B2 (en) * 2012-02-21 2015-07-28 Western Digital (Fremont), Llc Methods for manufacturing a magnetoresistive structure utilizing heating and cooling
US9230626B2 (en) * 2012-08-06 2016-01-05 Cornell University Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applications
US9082888B2 (en) 2012-10-17 2015-07-14 New York University Inverted orthogonal spin transfer layer stack
US9082950B2 (en) 2012-10-17 2015-07-14 New York University Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
KR102419536B1 (ko) 2014-07-17 2022-07-11 코넬 유니버시티 효율적인 스핀 전달 토크를 위한 향상된 스핀 홀 효과에 기초한 회로들 및 디바이스들
US9263667B1 (en) 2014-07-25 2016-02-16 Spin Transfer Technologies, Inc. Method for manufacturing MTJ memory device
US9337412B2 (en) 2014-09-22 2016-05-10 Spin Transfer Technologies, Inc. Magnetic tunnel junction structure for MRAM device
US10468590B2 (en) 2015-04-21 2019-11-05 Spin Memory, Inc. High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
US9728712B2 (en) 2015-04-21 2017-08-08 Spin Transfer Technologies, Inc. Spin transfer torque structure for MRAM devices having a spin current injection capping layer
US9853206B2 (en) 2015-06-16 2017-12-26 Spin Transfer Technologies, Inc. Precessional spin current structure for MRAM
US9773974B2 (en) 2015-07-30 2017-09-26 Spin Transfer Technologies, Inc. Polishing stop layer(s) for processing arrays of semiconductor elements
US10163479B2 (en) 2015-08-14 2018-12-25 Spin Transfer Technologies, Inc. Method and apparatus for bipolar memory write-verify
EP3284091B1 (de) 2015-12-10 2021-08-18 Everspin Technologies, Inc. Magnetoresistiver stapel, seed-region dafür und verfahren zur herstellung davon
US10483320B2 (en) 2015-12-10 2019-11-19 Everspin Technologies, Inc. Magnetoresistive stack with seed region and method of manufacturing the same
US9741926B1 (en) 2016-01-28 2017-08-22 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer
US10361361B2 (en) * 2016-04-08 2019-07-23 International Business Machines Corporation Thin reference layer for STT MRAM
US11119910B2 (en) 2016-09-27 2021-09-14 Spin Memory, Inc. Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments
US10360964B2 (en) 2016-09-27 2019-07-23 Spin Memory, Inc. Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device
US10991410B2 (en) 2016-09-27 2021-04-27 Spin Memory, Inc. Bi-polar write scheme
US10460781B2 (en) 2016-09-27 2019-10-29 Spin Memory, Inc. Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank
US10628316B2 (en) 2016-09-27 2020-04-21 Spin Memory, Inc. Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register
US10818331B2 (en) 2016-09-27 2020-10-27 Spin Memory, Inc. Multi-chip module for MRAM devices with levels of dynamic redundancy registers
US10437491B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register
US10446210B2 (en) 2016-09-27 2019-10-15 Spin Memory, Inc. Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers
US10546625B2 (en) 2016-09-27 2020-01-28 Spin Memory, Inc. Method of optimizing write voltage based on error buffer occupancy
US11119936B2 (en) 2016-09-27 2021-09-14 Spin Memory, Inc. Error cache system with coarse and fine segments for power optimization
US10366774B2 (en) 2016-09-27 2019-07-30 Spin Memory, Inc. Device with dynamic redundancy registers
US10437723B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device
US11151042B2 (en) 2016-09-27 2021-10-19 Integrated Silicon Solution, (Cayman) Inc. Error cache segmentation for power reduction
US20180151210A1 (en) * 2016-11-30 2018-05-31 Western Digital Technologies, Inc. Shared source line architectures of perpendicular hybrid spin-torque transfer (stt) and spin-orbit torque (sot) magnetic random access memory
US10665777B2 (en) 2017-02-28 2020-05-26 Spin Memory, Inc. Precessional spin current structure with non-magnetic insertion layer for MRAM
US10672976B2 (en) 2017-02-28 2020-06-02 Spin Memory, Inc. Precessional spin current structure with high in-plane magnetization for MRAM
CN108666339B (zh) * 2017-03-28 2020-11-13 中芯国际集成电路制造(上海)有限公司 磁性随机存储器及其存储单元的制造方法
US10032978B1 (en) 2017-06-27 2018-07-24 Spin Transfer Technologies, Inc. MRAM with reduced stray magnetic fields
US10656994B2 (en) 2017-10-24 2020-05-19 Spin Memory, Inc. Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques
US10529439B2 (en) 2017-10-24 2020-01-07 Spin Memory, Inc. On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects
US10489245B2 (en) 2017-10-24 2019-11-26 Spin Memory, Inc. Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them
US10481976B2 (en) 2017-10-24 2019-11-19 Spin Memory, Inc. Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers
US10679685B2 (en) 2017-12-27 2020-06-09 Spin Memory, Inc. Shared bit line array architecture for magnetoresistive memory
US10360962B1 (en) 2017-12-28 2019-07-23 Spin Memory, Inc. Memory array with individually trimmable sense amplifiers
US10891997B2 (en) 2017-12-28 2021-01-12 Spin Memory, Inc. Memory array with horizontal source line and a virtual source line
US10395711B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Perpendicular source and bit lines for an MRAM array
US10395712B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Memory array with horizontal source line and sacrificial bitline per virtual source
US10811594B2 (en) 2017-12-28 2020-10-20 Spin Memory, Inc. Process for hard mask development for MRAM pillar formation using photolithography
US10424726B2 (en) 2017-12-28 2019-09-24 Spin Memory, Inc. Process for improving photoresist pillar adhesion during MRAM fabrication
US10516094B2 (en) 2017-12-28 2019-12-24 Spin Memory, Inc. Process for creating dense pillars using multiple exposures for MRAM fabrication
US10840439B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Magnetic tunnel junction (MTJ) fabrication methods and systems
US10199083B1 (en) 2017-12-29 2019-02-05 Spin Transfer Technologies, Inc. Three-terminal MRAM with ac write-assist for low read disturb
US10840436B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
US10367139B2 (en) 2017-12-29 2019-07-30 Spin Memory, Inc. Methods of manufacturing magnetic tunnel junction devices
US10424723B2 (en) 2017-12-29 2019-09-24 Spin Memory, Inc. Magnetic tunnel junction devices including an optimization layer
US10546624B2 (en) 2017-12-29 2020-01-28 Spin Memory, Inc. Multi-port random access memory
US10360961B1 (en) 2017-12-29 2019-07-23 Spin Memory, Inc. AC current pre-charge write-assist in orthogonal STT-MRAM
US10236048B1 (en) 2017-12-29 2019-03-19 Spin Memory, Inc. AC current write-assist in orthogonal STT-MRAM
US10270027B1 (en) 2017-12-29 2019-04-23 Spin Memory, Inc. Self-generating AC current assist in orthogonal STT-MRAM
US10886330B2 (en) 2017-12-29 2021-01-05 Spin Memory, Inc. Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch
US10236047B1 (en) 2017-12-29 2019-03-19 Spin Memory, Inc. Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
US10784439B2 (en) 2017-12-29 2020-09-22 Spin Memory, Inc. Precessional spin current magnetic tunnel junction devices and methods of manufacture
US10141499B1 (en) 2017-12-30 2018-11-27 Spin Transfer Technologies, Inc. Perpendicular magnetic tunnel junction device with offset precessional spin current layer
US10229724B1 (en) 2017-12-30 2019-03-12 Spin Memory, Inc. Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
US10339993B1 (en) 2017-12-30 2019-07-02 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
US10255962B1 (en) 2017-12-30 2019-04-09 Spin Memory, Inc. Microwave write-assist in orthogonal STT-MRAM
US10236439B1 (en) 2017-12-30 2019-03-19 Spin Memory, Inc. Switching and stability control for perpendicular magnetic tunnel junction device
US10319900B1 (en) 2017-12-30 2019-06-11 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density
US10468588B2 (en) 2018-01-05 2019-11-05 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
US10438995B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Devices including magnetic tunnel junctions integrated with selectors
US10438996B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Methods of fabricating magnetic tunnel junctions integrated with selectors
US10777345B2 (en) * 2018-02-21 2020-09-15 Allegro Microsystems, Llc Spin valve with bias alignment
US10446744B2 (en) 2018-03-08 2019-10-15 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US10388861B1 (en) 2018-03-08 2019-08-20 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US11107978B2 (en) 2018-03-23 2021-08-31 Spin Memory, Inc. Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
US10784437B2 (en) 2018-03-23 2020-09-22 Spin Memory, Inc. Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
US20190296223A1 (en) 2018-03-23 2019-09-26 Spin Memory, Inc. Methods of Manufacturing Three-Dimensional Arrays with Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer
US11107974B2 (en) 2018-03-23 2021-08-31 Spin Memory, Inc. Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer
US10411185B1 (en) 2018-05-30 2019-09-10 Spin Memory, Inc. Process for creating a high density magnetic tunnel junction array test platform
US10593396B2 (en) 2018-07-06 2020-03-17 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10559338B2 (en) 2018-07-06 2020-02-11 Spin Memory, Inc. Multi-bit cell read-out techniques
US10692569B2 (en) 2018-07-06 2020-06-23 Spin Memory, Inc. Read-out techniques for multi-bit cells
US10600478B2 (en) 2018-07-06 2020-03-24 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10650875B2 (en) 2018-08-21 2020-05-12 Spin Memory, Inc. System for a wide temperature range nonvolatile memory
US10699761B2 (en) 2018-09-18 2020-06-30 Spin Memory, Inc. Word line decoder memory architecture
US10971680B2 (en) 2018-10-01 2021-04-06 Spin Memory, Inc. Multi terminal device stack formation methods
US11621293B2 (en) 2018-10-01 2023-04-04 Integrated Silicon Solution, (Cayman) Inc. Multi terminal device stack systems and methods
US10580827B1 (en) 2018-11-16 2020-03-03 Spin Memory, Inc. Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
US11107979B2 (en) 2018-12-28 2021-08-31 Spin Memory, Inc. Patterned silicide structures and methods of manufacture
CN113314166B (zh) * 2021-05-14 2023-12-12 致真存储(北京)科技有限公司 控制钉扎层畴结构在巨/隧穿磁电阻结构实现多态存储的方法及多态存储器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US105827A (en) * 1870-07-26 Improvement in wrench
US7398A (en) * 1850-05-28 Machinery for making four-sided buckles
US59588A (en) * 1866-11-13 Improvement in chimney-holders for gas-burners
US6256222B1 (en) * 1994-05-02 2001-07-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
US5695864A (en) * 1995-09-28 1997-12-09 International Business Machines Corporation Electronic device using magnetic components
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US6069820A (en) * 1998-02-20 2000-05-30 Kabushiki Kaisha Toshiba Spin dependent conduction device
US6292389B1 (en) * 1999-07-19 2001-09-18 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
FR2817998B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a rotation d'aimantation, memoire et procede d'ecriture utilisant ce dispositif
FR2817999B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
US6744086B2 (en) 2001-05-15 2004-06-01 Nve Corporation Current switched magnetoresistive memory cell
JP3849460B2 (ja) * 2001-05-29 2006-11-22 ソニー株式会社 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド
US6418048B1 (en) * 2001-08-15 2002-07-09 Read-Rite Corporation Spin-dependent tunneling sensor suitable for a magnetic memory
US6741496B2 (en) 2001-09-27 2004-05-25 Intel Corporation Electron spin mechanisms for inducing magnetic-polarization reversal
US6473337B1 (en) * 2001-10-24 2002-10-29 Hewlett-Packard Company Memory device having memory cells with magnetic tunnel junction and tunnel junction in series
US6593608B1 (en) * 2002-03-15 2003-07-15 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having double tunnel junction
US6714444B2 (en) * 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6865109B2 (en) * 2003-06-06 2005-03-08 Seagate Technology Llc Magnetic random access memory having flux closure for the free layer and spin transfer write mechanism

Also Published As

Publication number Publication date
US6714444B2 (en) 2004-03-30
EP1552526A2 (de) 2005-07-13
US6920063B2 (en) 2005-07-19
EP1552526B1 (de) 2006-10-18
WO2004013861A2 (en) 2004-02-12
AU2003258117A1 (en) 2004-02-23
WO2004013861A3 (en) 2004-04-22
US20040130940A1 (en) 2004-07-08
AU2003258117A8 (en) 2004-02-23
US7106624B2 (en) 2006-09-12
US20050201023A1 (en) 2005-09-15
JP2005535125A (ja) 2005-11-17
DE60309190T2 (de) 2007-08-30
EP1552526A4 (de) 2005-10-19
US20040027853A1 (en) 2004-02-12

Similar Documents

Publication Publication Date Title
DE60309190D1 (de) Magnetelement mit spintransfer und mram-bauelement mit dem magnetelement
CY2018009I1 (el) Παραλλαγες ανοσοσφαιρινων και χρησεις αυτων
DE60300379D1 (de) Magnetisches Logikelement, magnetisches Speicherelement und Aufreihungen derselben
DE60326611D1 (de) N und dergleichen
DE60312748D1 (de) Magnetoresistives Element
DE60218971D1 (de) Magnetoresistives Element
DE60018875D1 (de) MRAM mit Leseverstärkern
DE60229216D1 (de) Mram architektur und system
DE50213635D1 (de) Stromversorgung mit abschaltsicherung
DE60212479D1 (de) Magnetoresistives Element und Benützung für MRAM
DE602004031427D1 (de) Stellgliedelement und einrichtung mit stellgliedelement
DE602005025604D1 (de) Schalter und einrichtung mit dem schalter
GB2419465B (en) Ga-base alloy and organic function element using the same
DE60208942D1 (de) Drehkörper mit stillstehendem Reklameschild
AR028098A1 (es) Bebida estable en el ambiente
DE60300157D1 (de) Magnetische Speichereinheit und magnetische Speichermatrix
DE50211216D1 (de) Magnetische speichereinheit und magnetisches speicherarray
DE60111709D1 (de) Reifen mit genau angeordneten und orientierten Elementen
EP1526588A4 (de) Magnetowiderstandseffektelement und magnetische speichereinheit
DE50210116D1 (de) Mram-anordnung
DE60226986D1 (de) Mram bitleitungwortleitungsarchitektur
DE60320114D1 (de) Transformator und transformatoranordnung mit solchem transformator
DE60235937D1 (de) Dekorfolie und Zierelement
DE60304229D1 (de) Pinselabflacher und mit Pinselabflacher ausgerüstete Zeichenvorrichtung
EP1662520A4 (de) Magnet-bias-film und magnetsensor damit

Legal Events

Date Code Title Description
8364 No opposition during term of opposition