US7630237B2
(en)
|
2003-02-06 |
2009-12-08 |
Sandisk Corporation |
System and method for programming cells in non-volatile integrated memory devices
|
US7574341B1
(en)
*
|
2003-11-12 |
2009-08-11 |
Hewlett-Packard Development Company, L.P. |
Speculative expectation based event verification
|
US7418678B1
(en)
*
|
2003-12-01 |
2008-08-26 |
Jasper Design Automation, Inc. |
Managing formal verification complexity of designs with counters
|
US7355237B2
(en)
*
|
2004-02-13 |
2008-04-08 |
Sandisk Corporation |
Shield plate for limiting cross coupling between floating gates
|
US7023733B2
(en)
*
|
2004-05-05 |
2006-04-04 |
Sandisk Corporation |
Boosting to control programming of non-volatile memory
|
US7490283B2
(en)
|
2004-05-13 |
2009-02-10 |
Sandisk Corporation |
Pipelined data relocation and improved chip architectures
|
US7535771B2
(en)
*
|
2004-11-04 |
2009-05-19 |
Macronix International Co., Ltd. |
Devices and methods to improve erase uniformity and to screen for marginal cells for NROM memories
|
US7420847B2
(en)
*
|
2004-12-14 |
2008-09-02 |
Sandisk Corporation |
Multi-state memory having data recovery after program fail
|
US7120051B2
(en)
*
|
2004-12-14 |
2006-10-10 |
Sandisk Corporation |
Pipelined programming of non-volatile memories using early data
|
US7158421B2
(en)
*
|
2005-04-01 |
2007-01-02 |
Sandisk Corporation |
Use of data latches in multi-phase programming of non-volatile memories
|
US7849381B2
(en)
*
|
2004-12-21 |
2010-12-07 |
Sandisk Corporation |
Method for copying data in reprogrammable non-volatile memory
|
US7403424B2
(en)
*
|
2005-03-31 |
2008-07-22 |
Sandisk Corporation |
Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
|
US7206230B2
(en)
*
|
2005-04-01 |
2007-04-17 |
Sandisk Corporation |
Use of data latches in cache operations of non-volatile memories
|
US7447078B2
(en)
*
|
2005-04-01 |
2008-11-04 |
Sandisk Corporation |
Method for non-volatile memory with background data latch caching during read operations
|
US7463521B2
(en)
|
2005-04-01 |
2008-12-09 |
Sandisk Corporation |
Method for non-volatile memory with managed execution of cached data
|
US7339834B2
(en)
*
|
2005-06-03 |
2008-03-04 |
Sandisk Corporation |
Starting program voltage shift with cycling of non-volatile memory
|
US7362616B2
(en)
*
|
2005-07-28 |
2008-04-22 |
Stmicroelectronics S.R.L. |
NAND flash memory with erase verify based on shorter evaluation time
|
EP1748446A1
(de)
*
|
2005-07-28 |
2007-01-31 |
STMicroelectronics S.r.l. |
Zweiseitenprogrammierung
|
EP1911033B1
(de)
*
|
2005-08-01 |
2011-08-24 |
SanDisk Corporation |
Programmierung eines nicht-flüchtigen speichers mit selbst-regulierender maximaler programmschleife
|
US7230854B2
(en)
*
|
2005-08-01 |
2007-06-12 |
Sandisk Corporation |
Method for programming non-volatile memory with self-adjusting maximum program loop
|
US7023737B1
(en)
*
|
2005-08-01 |
2006-04-04 |
Sandisk Corporation |
System for programming non-volatile memory with self-adjusting maximum program loop
|
US7301817B2
(en)
*
|
2005-10-27 |
2007-11-27 |
Sandisk Corporation |
Method for programming of multi-state non-volatile memory using smart verify
|
US7366022B2
(en)
*
|
2005-10-27 |
2008-04-29 |
Sandisk Corporation |
Apparatus for programming of multi-state non-volatile memory using smart verify
|
EP1946323B1
(de)
*
|
2005-10-27 |
2011-07-27 |
SanDisk Corporation |
Verfahren zur programmierung eines nichtflüchtigen mehrzustandsspeichers unter verwendung einer intelligenten verifizierung
|
US7616481B2
(en)
|
2005-12-28 |
2009-11-10 |
Sandisk Corporation |
Memories with alternate sensing techniques
|
US7349264B2
(en)
|
2005-12-28 |
2008-03-25 |
Sandisk Corporation |
Alternate sensing techniques for non-volatile memories
|
US7224614B1
(en)
|
2005-12-29 |
2007-05-29 |
Sandisk Corporation |
Methods for improved program-verify operations in non-volatile memories
|
US7310255B2
(en)
*
|
2005-12-29 |
2007-12-18 |
Sandisk Corporation |
Non-volatile memory with improved program-verify operations
|
US8239735B2
(en)
|
2006-05-12 |
2012-08-07 |
Apple Inc. |
Memory Device with adaptive capacity
|
WO2007132452A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies |
Reducing programming error in memory devices
|
KR101202537B1
(ko)
|
2006-05-12 |
2012-11-19 |
애플 인크. |
메모리 디바이스를 위한 결합된 왜곡 추정 및 에러 보정 코딩
|
KR101375955B1
(ko)
|
2006-05-12 |
2014-03-18 |
애플 인크. |
메모리 디바이스 내의 왜곡 추정 및 상쇄
|
US7489549B2
(en)
*
|
2006-06-22 |
2009-02-10 |
Sandisk Corporation |
System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US7486561B2
(en)
*
|
2006-06-22 |
2009-02-03 |
Sandisk Corporation |
Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US7304893B1
(en)
|
2006-06-30 |
2007-12-04 |
Sandisk Corporation |
Method of partial page fail bit detection in flash memory devices
|
US7355892B2
(en)
*
|
2006-06-30 |
2008-04-08 |
Sandisk Corporation |
Partial page fail bit detection in flash memory devices
|
WO2008026203A2
(en)
|
2006-08-27 |
2008-03-06 |
Anobit Technologies |
Estimation of non-linear distortion in memory devices
|
US7602650B2
(en)
*
|
2006-08-30 |
2009-10-13 |
Samsung Electronics Co., Ltd. |
Flash memory device and method for programming multi-level cells in the same
|
US7525838B2
(en)
*
|
2006-08-30 |
2009-04-28 |
Samsung Electronics Co., Ltd. |
Flash memory device and method for programming multi-level cells in the same
|
US7734861B2
(en)
*
|
2006-09-08 |
2010-06-08 |
Sandisk Corporation |
Pseudo random and command driven bit compensation for the cycling effects in flash memory
|
US7885112B2
(en)
*
|
2007-09-07 |
2011-02-08 |
Sandisk Corporation |
Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
|
US7606966B2
(en)
*
|
2006-09-08 |
2009-10-20 |
Sandisk Corporation |
Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
|
KR101047168B1
(ko)
|
2006-10-13 |
2011-07-07 |
샌디스크 코포레이션 |
비휘발성 메모리에서의 분할된 소프트 프로그래밍
|
KR101062032B1
(ko)
|
2006-10-13 |
2011-09-05 |
샌디스크 코포레이션 |
비휘발성 메모리에서의 분할된 소거 및 소거 검증
|
US7975192B2
(en)
|
2006-10-30 |
2011-07-05 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
CN101601094B
(zh)
|
2006-10-30 |
2013-03-27 |
苹果公司 |
使用多个门限读取存储单元的方法
|
US7924648B2
(en)
|
2006-11-28 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory power and performance management
|
US8151163B2
(en)
|
2006-12-03 |
2012-04-03 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
US7900102B2
(en)
|
2006-12-17 |
2011-03-01 |
Anobit Technologies Ltd. |
High-speed programming of memory devices
|
US7551482B2
(en)
*
|
2006-12-27 |
2009-06-23 |
Sandisk Corporation |
Method for programming with initial programming voltage based on trial
|
US7570520B2
(en)
*
|
2006-12-27 |
2009-08-04 |
Sandisk Corporation |
Non-volatile storage system with initial programming voltage based on trial
|
WO2008086237A2
(en)
*
|
2007-01-05 |
2008-07-17 |
California Institute Of Technology |
Codes for limited magnitude asymmetric errors in flash memories
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
US7751240B2
(en)
|
2007-01-24 |
2010-07-06 |
Anobit Technologies Ltd. |
Memory device with negative thresholds
|
CN102005244B
(zh)
|
2007-02-20 |
2015-10-21 |
桑迪士克科技公司 |
非易失性存储的可变编程
|
US7564715B2
(en)
*
|
2007-02-20 |
2009-07-21 |
Sandisk Corporation |
Variable initial program voltage magnitude for non-volatile storage
|
KR101371522B1
(ko)
*
|
2007-02-27 |
2014-03-12 |
삼성전자주식회사 |
비휘발성 메모리 장치 및 그것의 구동 방법
|
US8369141B2
(en)
|
2007-03-12 |
2013-02-05 |
Apple Inc. |
Adaptive estimation of memory cell read thresholds
|
KR100816220B1
(ko)
*
|
2007-03-14 |
2008-03-21 |
주식회사 하이닉스반도체 |
불휘발성 메모리 장치의 언더 프로그램 셀 검출 방법 및그를 이용한 프로그램 방법
|
US8001320B2
(en)
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
US8429493B2
(en)
|
2007-05-12 |
2013-04-23 |
Apple Inc. |
Memory device with internal signap processing unit
|
US8234545B2
(en)
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
US7925936B1
(en)
|
2007-07-13 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory device with non-uniform programming levels
|
US7898885B2
(en)
*
|
2007-07-19 |
2011-03-01 |
Micron Technology, Inc. |
Analog sensing of memory cells in a solid state memory device
|
US7649782B2
(en)
*
|
2007-07-31 |
2010-01-19 |
Freescale Semiconductor, Inc. |
Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor
|
US8259497B2
(en)
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
US7869273B2
(en)
|
2007-09-04 |
2011-01-11 |
Sandisk Corporation |
Reducing the impact of interference during programming
|
US7813188B2
(en)
*
|
2007-09-10 |
2010-10-12 |
Hynix Semiconductor Inc. |
Non-volatile memory device and a method of programming a multi level cell in the same
|
US8174905B2
(en)
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
KR100891405B1
(ko)
*
|
2007-09-27 |
2009-04-02 |
주식회사 하이닉스반도체 |
불휘발성 메모리 장치 및 그 동작 방법
|
US7773413B2
(en)
|
2007-10-08 |
2010-08-10 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells in the presence of temperature variations
|
US8000141B1
(en)
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
US8068360B2
(en)
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
WO2009050703A2
(en)
|
2007-10-19 |
2009-04-23 |
Anobit Technologies |
Data storage in analog memory cell arrays having erase failures
|
WO2009063450A2
(en)
|
2007-11-13 |
2009-05-22 |
Anobit Technologies |
Optimized selection of memory units in multi-unit memory devices
|
JP2009129480A
(ja)
*
|
2007-11-20 |
2009-06-11 |
Toshiba Corp |
不揮発性半導体記憶装置の閾値制御方法
|
DE102007055479B4
(de)
*
|
2007-11-21 |
2015-09-10 |
Audi Ag |
Knotenelement für eine Fachwerkskonstruktion
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
JP5151439B2
(ja)
*
|
2007-12-12 |
2013-02-27 |
ソニー株式会社 |
記憶装置および情報再記録方法
|
US8209588B2
(en)
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US8456905B2
(en)
|
2007-12-16 |
2013-06-04 |
Apple Inc. |
Efficient data storage in multi-plane memory devices
|
US8085586B2
(en)
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
US7916544B2
(en)
|
2008-01-25 |
2011-03-29 |
Micron Technology, Inc. |
Random telegraph signal noise reduction scheme for semiconductor memories
|
US8156398B2
(en)
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US20090199058A1
(en)
*
|
2008-02-06 |
2009-08-06 |
Christoph Seidl |
Programmable memory with reliability testing of the stored data
|
US7924587B2
(en)
|
2008-02-21 |
2011-04-12 |
Anobit Technologies Ltd. |
Programming of analog memory cells using a single programming pulse per state transition
|
US7864573B2
(en)
|
2008-02-24 |
2011-01-04 |
Anobit Technologies Ltd. |
Programming analog memory cells for reduced variance after retention
|
ITRM20080114A1
(it)
*
|
2008-02-29 |
2009-09-01 |
Micron Technology Inc |
Compensazione della perdita di carica durante la programmazione di un dispositivo di memoria.
|
US8230300B2
(en)
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8059457B2
(en)
*
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
KR100954949B1
(ko)
*
|
2008-05-14 |
2010-04-27 |
주식회사 하이닉스반도체 |
불휘발성 메모리 장치의 멀티 레벨 셀 프로그램 방법
|
US8433980B2
(en)
*
|
2008-06-23 |
2013-04-30 |
Sandisk Il Ltd. |
Fast, low-power reading of data in a flash memory
|
US8498151B1
(en)
|
2008-08-05 |
2013-07-30 |
Apple Inc. |
Data storage in analog memory cells using modified pass voltages
|
US7924613B1
(en)
|
2008-08-05 |
2011-04-12 |
Anobit Technologies Ltd. |
Data storage in analog memory cells with protection against programming interruption
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
JP5172555B2
(ja)
*
|
2008-09-08 |
2013-03-27 |
株式会社東芝 |
半導体記憶装置
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
KR101532754B1
(ko)
|
2008-09-22 |
2015-07-02 |
삼성전자주식회사 |
비휘발성 메모리 장치의 프로그램 방법
|
US7768836B2
(en)
*
|
2008-10-10 |
2010-08-03 |
Sandisk Corporation |
Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
US8254177B2
(en)
|
2008-10-24 |
2012-08-28 |
Sandisk Technologies Inc. |
Programming non-volatile memory with variable initial programming pulse
|
US8713330B1
(en)
|
2008-10-30 |
2014-04-29 |
Apple Inc. |
Data scrambling in memory devices
|
US8208304B2
(en)
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
US8174857B1
(en)
|
2008-12-31 |
2012-05-08 |
Anobit Technologies Ltd. |
Efficient readout schemes for analog memory cell devices using multiple read threshold sets
|
US8248831B2
(en)
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
US8111544B2
(en)
*
|
2009-02-23 |
2012-02-07 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Programming MRAM cells using probability write
|
US8228701B2
(en)
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
KR101005145B1
(ko)
*
|
2009-03-06 |
2011-01-04 |
주식회사 하이닉스반도체 |
불휘발성 메모리 소자의 프로그램 방법
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8832354B2
(en)
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
KR101015644B1
(ko)
*
|
2009-05-29 |
2011-02-22 |
주식회사 하이닉스반도체 |
불휘발성 메모리 장치 및 이를 프로그램하는 방법
|
US8054691B2
(en)
*
|
2009-06-26 |
2011-11-08 |
Sandisk Technologies Inc. |
Detecting the completion of programming for non-volatile storage
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8243520B2
(en)
*
|
2009-11-02 |
2012-08-14 |
Infineon Technologies Ag |
Non-volatile memory with predictive programming
|
US8223556B2
(en)
*
|
2009-11-25 |
2012-07-17 |
Sandisk Technologies Inc. |
Programming non-volatile memory with a reduced number of verify operations
|
US8174895B2
(en)
|
2009-12-15 |
2012-05-08 |
Sandisk Technologies Inc. |
Programming non-volatile storage with fast bit detection and verify skip
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US8677203B1
(en)
|
2010-01-11 |
2014-03-18 |
Apple Inc. |
Redundant data storage schemes for multi-die memory systems
|
KR101676816B1
(ko)
|
2010-02-11 |
2016-11-18 |
삼성전자주식회사 |
플래시 메모리 장치 및 그것의 프로그램 방법
|
US8233324B2
(en)
|
2010-03-25 |
2012-07-31 |
Sandisk Il Ltd. |
Simultaneous multi-state read or verify in non-volatile storage
|
US8218366B2
(en)
|
2010-04-18 |
2012-07-10 |
Sandisk Technologies Inc. |
Programming non-volatile storage including reducing impact from other memory cells
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US8416624B2
(en)
|
2010-05-21 |
2013-04-09 |
SanDisk Technologies, Inc. |
Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8432732B2
(en)
|
2010-07-09 |
2013-04-30 |
Sandisk Technologies Inc. |
Detection of word-line leakage in memory arrays
|
US8305807B2
(en)
|
2010-07-09 |
2012-11-06 |
Sandisk Technologies Inc. |
Detection of broken word-lines in memory arrays
|
US8514630B2
(en)
|
2010-07-09 |
2013-08-20 |
Sandisk Technologies Inc. |
Detection of word-line leakage in memory arrays: current based approach
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
US8645794B1
(en)
|
2010-07-31 |
2014-02-04 |
Apple Inc. |
Data storage in analog memory cells using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
US8310870B2
(en)
|
2010-08-03 |
2012-11-13 |
Sandisk Technologies Inc. |
Natural threshold voltage distribution compaction in non-volatile memory
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
US8374031B2
(en)
|
2010-09-29 |
2013-02-12 |
SanDisk Technologies, Inc. |
Techniques for the fast settling of word lines in NAND flash memory
|
US8345482B2
(en)
*
|
2010-12-15 |
2013-01-01 |
Micron Technology, Inc. |
Methods for segmented programming and memory devices
|
US8472280B2
(en)
|
2010-12-21 |
2013-06-25 |
Sandisk Technologies Inc. |
Alternate page by page programming scheme
|
KR101211840B1
(ko)
*
|
2010-12-30 |
2012-12-12 |
에스케이하이닉스 주식회사 |
반도체 메모리 장치의 프로그램 방법
|
US8379454B2
(en)
|
2011-05-05 |
2013-02-19 |
Sandisk Technologies Inc. |
Detection of broken word-lines in memory arrays
|
US8843693B2
(en)
|
2011-05-17 |
2014-09-23 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with improved data scrambling
|
US8456911B2
(en)
|
2011-06-07 |
2013-06-04 |
Sandisk Technologies Inc. |
Intelligent shifting of read pass voltages for non-volatile storage
|
US8432740B2
(en)
|
2011-07-21 |
2013-04-30 |
Sandisk Technologies Inc. |
Program algorithm with staircase waveform decomposed into multiple passes
|
US8750042B2
(en)
|
2011-07-28 |
2014-06-10 |
Sandisk Technologies Inc. |
Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
|
US8726104B2
(en)
|
2011-07-28 |
2014-05-13 |
Sandisk Technologies Inc. |
Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
|
US8775901B2
(en)
|
2011-07-28 |
2014-07-08 |
SanDisk Technologies, Inc. |
Data recovery for defective word lines during programming of non-volatile memory arrays
|
KR20130019082A
(ko)
*
|
2011-08-16 |
2013-02-26 |
삼성전자주식회사 |
비휘발성 메모리 장치의 설계 방법
|
US9361986B2
(en)
|
2011-09-19 |
2016-06-07 |
Sandisk Technologies Inc. |
High endurance non-volatile storage
|
KR101904581B1
(ko)
|
2011-11-18 |
2018-10-04 |
샌디스크 테크놀로지스 엘엘씨 |
고장난 워드 라인 스크린 및 데이터 복원을 갖는 비휘발성 저장장치
|
US9036415B2
(en)
|
2011-12-21 |
2015-05-19 |
Sandisk Technologies Inc. |
Mitigating variations arising from simultaneous multi-state sensing
|
US8811075B2
(en)
|
2012-01-06 |
2014-08-19 |
Sandisk Technologies Inc. |
Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
|
US8582381B2
(en)
|
2012-02-23 |
2013-11-12 |
SanDisk Technologies, Inc. |
Temperature based compensation during verify operations for non-volatile storage
|
US8730722B2
(en)
|
2012-03-02 |
2014-05-20 |
Sandisk Technologies Inc. |
Saving of data in cases of word-line to word-line short in memory arrays
|
US8937835B2
(en)
|
2012-03-13 |
2015-01-20 |
Sandisk Technologies Inc. |
Non-volatile storage with read process that reduces disturb
|
JP5398872B2
(ja)
*
|
2012-04-27 |
2014-01-29 |
株式会社東芝 |
半導体記憶装置
|
US8937837B2
(en)
|
2012-05-08 |
2015-01-20 |
Sandisk Technologies Inc. |
Bit line BL isolation scheme during erase operation for non-volatile storage
|
US9142305B2
(en)
|
2012-06-28 |
2015-09-22 |
Sandisk Technologies Inc. |
System to reduce stress on word line select transistor during erase operation
|
US9053819B2
(en)
|
2012-07-11 |
2015-06-09 |
Sandisk Technologies Inc. |
Programming method to tighten threshold voltage width with avoiding program disturb
|
US8750045B2
(en)
|
2012-07-27 |
2014-06-10 |
Sandisk Technologies Inc. |
Experience count dependent program algorithm for flash memory
|
JP2014053060A
(ja)
|
2012-09-07 |
2014-03-20 |
Toshiba Corp |
半導体記憶装置及びその制御方法
|
US20140071761A1
(en)
|
2012-09-10 |
2014-03-13 |
Sandisk Technologies Inc. |
Non-volatile storage with joint hard bit and soft bit reading
|
JP2014063551A
(ja)
|
2012-09-21 |
2014-04-10 |
Toshiba Corp |
半導体記憶装置
|
US9810723B2
(en)
|
2012-09-27 |
2017-11-07 |
Sandisk Technologies Llc |
Charge pump based over-sampling ADC for current detection
|
US9164526B2
(en)
|
2012-09-27 |
2015-10-20 |
Sandisk Technologies Inc. |
Sigma delta over-sampling charge pump analog-to-digital converter
|
US20140108705A1
(en)
|
2012-10-12 |
2014-04-17 |
Sandisk Technologies Inc. |
Use of High Endurance Non-Volatile Memory for Read Acceleration
|
US8885416B2
(en)
|
2013-01-30 |
2014-11-11 |
Sandisk Technologies Inc. |
Bit line current trip point modulation for reading nonvolatile storage elements
|
US8929142B2
(en)
|
2013-02-05 |
2015-01-06 |
Sandisk Technologies Inc. |
Programming select gate transistors and memory cells using dynamic verify level
|
US9311999B2
(en)
*
|
2013-09-06 |
2016-04-12 |
Micron Technology, Inc. |
Memory sense amplifiers and memory verification methods
|
US9165683B2
(en)
|
2013-09-23 |
2015-10-20 |
Sandisk Technologies Inc. |
Multi-word line erratic programming detection
|
GB2518632A
(en)
*
|
2013-09-26 |
2015-04-01 |
Ibm |
Estimation of level-thresholds for memory cells
|
US9620238B2
(en)
|
2014-01-20 |
2017-04-11 |
Sandisk Technologies Llc |
Methods and systems that selectively inhibit and enable programming of non-volatile storage elements
|
JP2015204126A
(ja)
*
|
2014-04-16 |
2015-11-16 |
株式会社東芝 |
半導体記憶装置
|
US9443612B2
(en)
|
2014-07-10 |
2016-09-13 |
Sandisk Technologies Llc |
Determination of bit line to low voltage signal shorts
|
US9484086B2
(en)
|
2014-07-10 |
2016-11-01 |
Sandisk Technologies Llc |
Determination of word line to local source line shorts
|
US9460809B2
(en)
|
2014-07-10 |
2016-10-04 |
Sandisk Technologies Llc |
AC stress mode to screen out word line to word line shorts
|
US9514835B2
(en)
|
2014-07-10 |
2016-12-06 |
Sandisk Technologies Llc |
Determination of word line to word line shorts between adjacent blocks
|
US9218874B1
(en)
|
2014-08-11 |
2015-12-22 |
Sandisk Technologies Inc. |
Multi-pulse programming cycle of non-volatile memory for enhanced de-trapping
|
US9202593B1
(en)
|
2014-09-02 |
2015-12-01 |
Sandisk Technologies Inc. |
Techniques for detecting broken word lines in non-volatile memories
|
US9240249B1
(en)
|
2014-09-02 |
2016-01-19 |
Sandisk Technologies Inc. |
AC stress methods to screen out bit line defects
|
US9449694B2
(en)
|
2014-09-04 |
2016-09-20 |
Sandisk Technologies Llc |
Non-volatile memory with multi-word line select for defect detection operations
|
US9443606B2
(en)
|
2014-10-28 |
2016-09-13 |
Sandisk Technologies Llc |
Word line dependent two strobe sensing mode for nonvolatile storage elements
|
US9875805B2
(en)
|
2015-01-23 |
2018-01-23 |
Sandisk Technologies Llc |
Double lockout in non-volatile memory
|
US9564213B2
(en)
|
2015-02-26 |
2017-02-07 |
Sandisk Technologies Llc |
Program verify for non-volatile storage
|
KR20160108770A
(ko)
|
2015-03-06 |
2016-09-20 |
에스케이하이닉스 주식회사 |
반도체 메모리 장치 및 그것의 동작 방법
|
US9548130B2
(en)
|
2015-04-08 |
2017-01-17 |
Sandisk Technologies Llc |
Non-volatile memory with prior state sensing
|
US9570179B2
(en)
|
2015-04-22 |
2017-02-14 |
Sandisk Technologies Llc |
Non-volatile memory with two phased programming
|
US9659666B2
(en)
|
2015-08-31 |
2017-05-23 |
Sandisk Technologies Llc |
Dynamic memory recovery at the sub-block level
|
US9711211B2
(en)
|
2015-10-29 |
2017-07-18 |
Sandisk Technologies Llc |
Dynamic threshold voltage compaction for non-volatile memory
|
US10014063B2
(en)
|
2015-10-30 |
2018-07-03 |
Sandisk Technologies Llc |
Smart skip verify mode for programming a memory device
|
US9564226B1
(en)
|
2015-10-30 |
2017-02-07 |
Sandisk Technologies Llc |
Smart verify for programming non-volatile memory
|
US9842655B2
(en)
|
2015-12-08 |
2017-12-12 |
Intel Corporation |
Reducing verification checks when programming a memory device
|
US9698676B1
(en)
|
2016-03-11 |
2017-07-04 |
Sandisk Technologies Llc |
Charge pump based over-sampling with uniform step size for current detection
|
US10452480B2
(en)
|
2017-05-25 |
2019-10-22 |
Micron Technology, Inc. |
Memory device with dynamic processing level calibration
|
US10140040B1
(en)
|
2017-05-25 |
2018-11-27 |
Micron Technology, Inc. |
Memory device with dynamic program-verify voltage calibration
|
US10373696B2
(en)
*
|
2017-08-18 |
2019-08-06 |
Western Digital Technologies, Inc. |
Methods and operations using XNOR functions with flash devices and solid state drives
|
TWI646550B
(zh)
*
|
2017-12-08 |
2019-01-01 |
旺宏電子股份有限公司 |
非揮發性記憶體及其寫入方法
|
US10664194B2
(en)
|
2018-05-16 |
2020-05-26 |
Micron Technology, Inc. |
Memory system with dynamic calibration using a variable adjustment mechanism
|
US10566063B2
(en)
|
2018-05-16 |
2020-02-18 |
Micron Technology, Inc. |
Memory system with dynamic calibration using a trim management mechanism
|
US10990466B2
(en)
|
2018-06-20 |
2021-04-27 |
Micron Technology, Inc. |
Memory sub-system with dynamic calibration using component-based function(s)
|
CN109524047B
(zh)
*
|
2018-10-15 |
2021-04-16 |
上海华虹宏力半导体制造有限公司 |
快闪存储器的字节编程重试方法
|
US10741568B2
(en)
|
2018-10-16 |
2020-08-11 |
Silicon Storage Technology, Inc. |
Precision tuning for the programming of analog neural memory in a deep learning artificial neural network
|
KR102528274B1
(ko)
|
2018-11-06 |
2023-05-02 |
삼성전자주식회사 |
비휘발성 메모리 장치 및 그 구동 방법
|
US10910075B2
(en)
|
2018-11-13 |
2021-02-02 |
Sandisk Technologies Llc |
Programming process combining adaptive verify with normal and slow programming speeds in a memory device
|
KR102641097B1
(ko)
*
|
2018-12-31 |
2024-02-27 |
삼성전자주식회사 |
저항성 메모리 장치 및 저항성 메모리 장치의 프로그램 방법
|
US10748622B2
(en)
|
2019-01-21 |
2020-08-18 |
Sandisk Technologies Llc |
State adaptive predictive programming
|
CN111863087B
(zh)
*
|
2019-04-29 |
2022-08-30 |
北京兆易创新科技股份有限公司 |
一种控制编程性能的方法和装置
|
US11081198B2
(en)
|
2019-05-16 |
2021-08-03 |
Sandisk Technologies Llc |
Non-volatile memory with countermeasure for over programming
|
US10839928B1
(en)
|
2019-05-16 |
2020-11-17 |
Sandisk Technologies Llc |
Non-volatile memory with countermeasure for over programming
|
CN112945355A
(zh)
*
|
2021-01-27 |
2021-06-11 |
武汉正维电子技术有限公司 |
双脉冲数据采集方法
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
CN115512747A
(zh)
|
2021-06-23 |
2022-12-23 |
桑迪士克科技有限责任公司 |
用于具有相邻平面干扰检测的智能验证的设备和方法
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|
JP2023093187A
(ja)
*
|
2021-12-22 |
2023-07-04 |
キオクシア株式会社 |
半導体記憶装置
|