DE60313462D1 - Sublithographische nanobereichs-speicherarchitektur - Google Patents
Sublithographische nanobereichs-speicherarchitekturInfo
- Publication number
- DE60313462D1 DE60313462D1 DE60313462T DE60313462T DE60313462D1 DE 60313462 D1 DE60313462 D1 DE 60313462D1 DE 60313462 T DE60313462 T DE 60313462T DE 60313462 T DE60313462 T DE 60313462T DE 60313462 D1 DE60313462 D1 DE 60313462D1
- Authority
- DE
- Germany
- Prior art keywords
- sublithographic
- nanoscale
- wires
- store architecture
- area store
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002070 nanowire Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
Applications Claiming Priority (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US465357P | 2000-01-28 | ||
US39894302P | 2002-07-25 | 2002-07-25 | |
US398943P | 2002-07-25 | ||
US40039402P | 2002-08-01 | 2002-08-01 | |
US400394P | 2002-08-01 | ||
US41517602P | 2002-09-30 | 2002-09-30 | |
US415176P | 2002-09-30 | ||
US42901002P | 2002-11-25 | 2002-11-25 | |
US429010P | 2002-11-25 | ||
US44199503P | 2003-01-23 | 2003-01-23 | |
US441995P | 2003-01-23 | ||
US46535703P | 2003-04-25 | 2003-04-25 | |
US46738803P | 2003-05-02 | 2003-05-02 | |
US467388P | 2003-05-02 | ||
PCT/US2003/023199 WO2004034467A2 (en) | 2002-07-25 | 2003-07-24 | Sublithographic nanoscale memory architecture |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60313462D1 true DE60313462D1 (de) | 2007-06-06 |
DE60313462T2 DE60313462T2 (de) | 2008-01-03 |
Family
ID=32097212
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60313462T Expired - Lifetime DE60313462T2 (de) | 2002-07-25 | 2003-07-24 | Sublithographische nanobereichs-speicherarchitektur |
DE60325903T Expired - Lifetime DE60325903D1 (de) | 2002-07-25 | 2003-07-24 | Dreidimensionales Speicher-Array |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60325903T Expired - Lifetime DE60325903D1 (de) | 2002-07-25 | 2003-07-24 | Dreidimensionales Speicher-Array |
Country Status (7)
Country | Link |
---|---|
US (2) | US6900479B2 (de) |
EP (3) | EP1758126A3 (de) |
JP (2) | JP2005539404A (de) |
AT (2) | ATE421147T1 (de) |
AU (2) | AU2003298529A1 (de) |
DE (2) | DE60313462T2 (de) |
WO (2) | WO2004061859A2 (de) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
US20060175601A1 (en) * | 2000-08-22 | 2006-08-10 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
CN101798057A (zh) * | 2000-08-22 | 2010-08-11 | 哈佛学院董事会 | 生长半导体纳米线的方法 |
CA2430888C (en) * | 2000-12-11 | 2013-10-22 | President And Fellows Of Harvard College | Nanosensors |
AU2003216070A1 (en) * | 2002-01-18 | 2003-09-02 | California Institute Of Technology | Array-based architecture for molecular electronics |
JP2005539404A (ja) * | 2002-07-25 | 2005-12-22 | カリフォルニア インスティテュート オヴ テクノロジー | サブパターン転写ナノスケールメモリ構造 |
EP1388521B1 (de) * | 2002-08-08 | 2006-06-07 | Sony Deutschland GmbH | Verfahren zur Herstellung einer Kreuzschienenstruktur von Nanodrähten |
AU2003283973B2 (en) | 2002-09-30 | 2008-10-30 | Oned Material Llc | Large-area nanoenabled macroelectronic substrates and uses therefor |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
WO2004109706A2 (en) | 2003-06-02 | 2004-12-16 | California Institute Of Technology | Nanoscale wire-based sublithographic programmable logic arrays |
US7242601B2 (en) | 2003-06-02 | 2007-07-10 | California Institute Of Technology | Deterministic addressing of nanoscale devices assembled at sublithographic pitches |
US7692952B2 (en) | 2003-07-24 | 2010-04-06 | California Institute Of Technology | Nanoscale wire coding for stochastic assembly |
WO2005084164A2 (en) * | 2003-08-13 | 2005-09-15 | Nantero, Inc. | Nanotube-based switching elements and logic circuits |
US7018549B2 (en) * | 2003-12-29 | 2006-03-28 | Intel Corporation | Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle |
US20090227107A9 (en) * | 2004-02-13 | 2009-09-10 | President And Fellows Of Havard College | Nanostructures Containing Metal Semiconductor Compounds |
US7310004B2 (en) * | 2004-05-28 | 2007-12-18 | California Institute Of Technology | Apparatus and method of interconnecting nanoscale programmable logic array clusters |
US20070264623A1 (en) * | 2004-06-15 | 2007-11-15 | President And Fellows Of Harvard College | Nanosensors |
WO2006003620A1 (en) * | 2004-06-30 | 2006-01-12 | Koninklijke Philips Electronics N.V. | Method for manufacturing an electric device with a layer of conductive material contacted by nanowire |
US7495942B2 (en) | 2004-08-13 | 2009-02-24 | University Of Florida Research Foundation, Inc. | Nanoscale content-addressable memory |
CA2581058C (en) * | 2004-09-21 | 2012-06-26 | Nantero, Inc. | Resistive elements using carbon nanotubes |
US7544977B2 (en) * | 2006-01-27 | 2009-06-09 | Hewlett-Packard Development Company, L.P. | Mixed-scale electronic interface |
JP2008523590A (ja) * | 2004-12-06 | 2008-07-03 | プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ | ナノスケールワイヤベースのデータ格納装置 |
US8072005B2 (en) * | 2005-02-04 | 2011-12-06 | Brown University Research Foundation | Apparatus, method and computer program product providing radial addressing of nanowires |
US8883568B2 (en) * | 2008-06-10 | 2014-11-11 | Brown University Research Foundation | Method providing radial addressing of nanowires |
US7211503B2 (en) * | 2005-02-24 | 2007-05-01 | Hewlett-Packard Development Company, L.P. | Electronic devices fabricated by use of random connections |
DE102005016244A1 (de) * | 2005-04-08 | 2006-10-19 | Infineon Technologies Ag | Speicherzelle, Speichereinrichtung und Verfahren zu deren Herstellung |
US7786467B2 (en) | 2005-04-25 | 2010-08-31 | Hewlett-Packard Development Company, L.P. | Three-dimensional nanoscale crossbars |
US20100227382A1 (en) * | 2005-05-25 | 2010-09-09 | President And Fellows Of Harvard College | Nanoscale sensors |
WO2006132659A2 (en) * | 2005-06-06 | 2006-12-14 | President And Fellows Of Harvard College | Nanowire heterostructures |
US7439731B2 (en) * | 2005-06-24 | 2008-10-21 | Crafts Douglas E | Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures |
US7721242B2 (en) * | 2005-12-20 | 2010-05-18 | The Invention Science Fund 1, Llc | Nanotube circuit analysis system and method |
US7989797B2 (en) * | 2005-12-20 | 2011-08-02 | The Invention Science Fund I, Llc | Connectible nanotube circuit |
US7786465B2 (en) * | 2005-12-20 | 2010-08-31 | Invention Science Fund 1, Llc | Deletable nanotube circuit |
US9159417B2 (en) * | 2005-12-20 | 2015-10-13 | The Invention Science Fund I, Llc | Deletable nanotube circuit |
US7576565B2 (en) * | 2006-04-03 | 2009-08-18 | Blaise Laurent Mouttet | Crossbar waveform driver circuit |
US9965251B2 (en) * | 2006-04-03 | 2018-05-08 | Blaise Laurent Mouttet | Crossbar arithmetic and summation processor |
US20070233761A1 (en) * | 2006-04-03 | 2007-10-04 | Mouttet Blaise L | Crossbar arithmetic processor |
US7302513B2 (en) * | 2006-04-03 | 2007-11-27 | Blaise Laurent Mouttet | Programmable crossbar signal processor |
US8183554B2 (en) * | 2006-04-03 | 2012-05-22 | Blaise Laurent Mouttet | Symmetrical programmable memresistor crossbar structure |
WO2008051316A2 (en) | 2006-06-12 | 2008-05-02 | President And Fellows Of Harvard College | Nanosensors and related technologies |
US7763932B2 (en) * | 2006-06-29 | 2010-07-27 | International Business Machines Corporation | Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices |
TWI307677B (en) * | 2006-07-18 | 2009-03-21 | Applied Res Lab | Method and device for fabricating nano-structure with patterned particle beam |
US7393739B2 (en) * | 2006-08-30 | 2008-07-01 | International Business Machines Corporation | Demultiplexers using transistors for accessing memory cell arrays |
US8058640B2 (en) | 2006-09-11 | 2011-11-15 | President And Fellows Of Harvard College | Branched nanoscale wires |
JP2010503981A (ja) | 2006-09-19 | 2010-02-04 | クナノ アーベー | ナノスケール電界効果トランジスタの構体 |
US8130007B2 (en) * | 2006-10-16 | 2012-03-06 | Formfactor, Inc. | Probe card assembly with carbon nanotube probes having a spring mechanism therein |
US7778061B2 (en) * | 2006-10-16 | 2010-08-17 | Hewlett-Packard Development Company, L.P. | Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems |
WO2008060455A2 (en) | 2006-11-09 | 2008-05-22 | Nanosys, Inc. | Methods for nanowire alignment and deposition |
US8575663B2 (en) | 2006-11-22 | 2013-11-05 | President And Fellows Of Harvard College | High-sensitivity nanoscale wire sensors |
US9806273B2 (en) * | 2007-01-03 | 2017-10-31 | The United States Of America As Represented By The Secretary Of The Army | Field effect transistor array using single wall carbon nano-tubes |
US7608854B2 (en) * | 2007-01-29 | 2009-10-27 | Hewlett-Packard Development Company, L.P. | Electronic device and method of making the same |
US7763978B2 (en) * | 2007-03-28 | 2010-07-27 | Hewlett-Packard Development Company, L.P. | Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions |
US7872334B2 (en) * | 2007-05-04 | 2011-01-18 | International Business Machines Corporation | Carbon nanotube diodes and electrostatic discharge circuits and methods |
US7492624B2 (en) * | 2007-06-29 | 2009-02-17 | Stmicroelectronics S.R.L. | Method and device for demultiplexing a crossbar non-volatile memory |
US20110089400A1 (en) * | 2008-04-15 | 2011-04-21 | Qunano Ab | Nanowire wrap gate devices |
JP2012506621A (ja) * | 2008-10-20 | 2012-03-15 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン | シリコン系ナノスケールクロスバーメモリ |
US8390323B2 (en) | 2009-04-30 | 2013-03-05 | Hewlett-Packard Development Company, L.P. | Dense nanoscale logic circuitry |
JP2012528020A (ja) | 2009-05-26 | 2012-11-12 | ナノシス・インク. | ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム |
US9297796B2 (en) | 2009-09-24 | 2016-03-29 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
KR101161060B1 (ko) * | 2009-11-30 | 2012-06-29 | 서강대학교산학협력단 | 나노입자를 기둥형태로 조직화시키기 위한 배열장치 및 그 배열방법 |
WO2011088340A2 (en) | 2010-01-15 | 2011-07-21 | Board Of Regents, The University Of Texas System | A carbon nanotube crossbar based nano-architecture |
WO2011093863A1 (en) | 2010-01-29 | 2011-08-04 | Hewlett-Packard Development Company, L.P. | Three dimensional multilayer circuit |
US7982504B1 (en) | 2010-01-29 | 2011-07-19 | Hewlett Packard Development Company, L.P. | Interconnection architecture for multilayer circuits |
US9368599B2 (en) * | 2010-06-22 | 2016-06-14 | International Business Machines Corporation | Graphene/nanostructure FET with self-aligned contact and gate |
US8872176B2 (en) | 2010-10-06 | 2014-10-28 | Formfactor, Inc. | Elastic encapsulated carbon nanotube based electrical contacts |
US9273004B2 (en) | 2011-09-29 | 2016-03-01 | International Business Machines Corporation | Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers |
US9442695B2 (en) | 2014-05-02 | 2016-09-13 | International Business Machines Corporation | Random bit generator based on nanomaterials |
US9720772B2 (en) * | 2015-03-04 | 2017-08-01 | Kabushiki Kaisha Toshiba | Memory system, method for controlling magnetic memory, and device for controlling magnetic memory |
CN107564946A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 纳米晶体管 |
CN107564910B (zh) * | 2016-07-01 | 2020-08-11 | 清华大学 | 半导体器件 |
CN107564917B (zh) * | 2016-07-01 | 2020-06-09 | 清华大学 | 纳米异质结构 |
CN107564947A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 纳米异质结构 |
US11943940B2 (en) | 2018-07-11 | 2024-03-26 | The Regents Of The University Of California | Nucleic acid-based electrically readable, read-only memory |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000048195A1 (en) * | 1999-02-12 | 2000-08-17 | Board Of Trustees Operating Michigan State University | Nanocapsules containing charged particles, their uses and methods of forming the same |
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6314019B1 (en) * | 1999-03-29 | 2001-11-06 | Hewlett-Packard Company | Molecular-wire crossbar interconnect (MWCI) for signal routing and communications |
US6256767B1 (en) * | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
US6383784B1 (en) | 1999-12-03 | 2002-05-07 | City Of Hope | Construction of nucleoprotein based assemblies comprising addressable components for nanoscale assembly and nanoprocessors |
EP1299914B1 (de) * | 2000-07-04 | 2008-04-02 | Qimonda AG | Feldeffekttransistor |
US7301199B2 (en) | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
AU2001297881A1 (en) | 2000-11-01 | 2003-01-02 | James J. Myrick | Nanoelectronic interconnection and addressing |
TW554388B (en) * | 2001-03-30 | 2003-09-21 | Univ California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
US6777982B2 (en) * | 2001-04-03 | 2004-08-17 | Carnegie Mellon University | Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation |
US6385075B1 (en) * | 2001-06-05 | 2002-05-07 | Hewlett-Packard Company | Parallel access of cross-point diode memory arrays |
US6706402B2 (en) * | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
AU2003216070A1 (en) * | 2002-01-18 | 2003-09-02 | California Institute Of Technology | Array-based architecture for molecular electronics |
US6760245B2 (en) | 2002-05-01 | 2004-07-06 | Hewlett-Packard Development Company, L.P. | Molecular wire crossbar flash memory |
JP2005539404A (ja) * | 2002-07-25 | 2005-12-22 | カリフォルニア インスティテュート オヴ テクノロジー | サブパターン転写ナノスケールメモリ構造 |
US6682951B1 (en) * | 2002-09-26 | 2004-01-27 | International Business Machines Corporation | Arrangements of microscopic particles for performing logic computations, and method of use |
-
2003
- 2003-07-24 JP JP2005501049A patent/JP2005539404A/ja active Pending
- 2003-07-24 EP EP06022522A patent/EP1758126A3/de not_active Withdrawn
- 2003-07-24 US US10/627,405 patent/US6900479B2/en not_active Expired - Lifetime
- 2003-07-24 JP JP2005508519A patent/JP2006512782A/ja active Pending
- 2003-07-24 DE DE60313462T patent/DE60313462T2/de not_active Expired - Lifetime
- 2003-07-24 WO PCT/US2003/023198 patent/WO2004061859A2/en active Application Filing
- 2003-07-24 AT AT05025371T patent/ATE421147T1/de not_active IP Right Cessation
- 2003-07-24 EP EP03796282A patent/EP1525586B1/de not_active Expired - Lifetime
- 2003-07-24 AU AU2003298529A patent/AU2003298529A1/en not_active Abandoned
- 2003-07-24 AU AU2003298530A patent/AU2003298530A1/en not_active Abandoned
- 2003-07-24 WO PCT/US2003/023199 patent/WO2004034467A2/en active IP Right Grant
- 2003-07-24 EP EP03796281A patent/EP1525585A2/de not_active Withdrawn
- 2003-07-24 AT AT03796282T patent/ATE360873T1/de not_active IP Right Cessation
- 2003-07-24 US US10/627,406 patent/US6963077B2/en not_active Expired - Fee Related
- 2003-07-24 DE DE60325903T patent/DE60325903D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE421147T1 (de) | 2009-01-15 |
AU2003298529A1 (en) | 2004-07-29 |
WO2004061859A3 (en) | 2005-02-03 |
ATE360873T1 (de) | 2007-05-15 |
WO2004034467A2 (en) | 2004-04-22 |
EP1758126A2 (de) | 2007-02-28 |
EP1758126A3 (de) | 2007-03-14 |
EP1525586A2 (de) | 2005-04-27 |
DE60313462T2 (de) | 2008-01-03 |
US20040113138A1 (en) | 2004-06-17 |
AU2003298530A8 (en) | 2004-05-04 |
EP1525585A2 (de) | 2005-04-27 |
US20040113139A1 (en) | 2004-06-17 |
US6900479B2 (en) | 2005-05-31 |
WO2004061859A2 (en) | 2004-07-22 |
US6963077B2 (en) | 2005-11-08 |
DE60325903D1 (de) | 2009-03-05 |
EP1525586B1 (de) | 2007-04-25 |
JP2005539404A (ja) | 2005-12-22 |
AU2003298529A8 (en) | 2004-07-29 |
JP2006512782A (ja) | 2006-04-13 |
WO2004034467A3 (en) | 2004-08-26 |
AU2003298530A1 (en) | 2004-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60313462D1 (de) | Sublithographische nanobereichs-speicherarchitektur | |
JP2002519182A5 (de) | ||
WO2003021613A3 (en) | Electromechanical memory array using nanotube ribbons and method for making same | |
MY141568A (en) | Semiconductor device and method of manufacturing the same | |
EP1870948A3 (de) | Organische Elektrolumineszenzvorrichtung | |
ATE470223T1 (de) | Speichergerät und verfahren mit einem datenweg mit mehreren vorabruf-e/a-konfigurationen | |
ATE444365T1 (de) | Interleukin-17 verwandte zytokine aus säugetieren. dafür kodierende polynukleotide. verwendungen | |
JP2005501564A5 (de) | ||
EP1533843A3 (de) | Elektrolumineszente Vorrichtung mit niederohmigen Zuleitungen | |
DE602004012496D1 (de) | Spielzeug | |
JP2004023739A5 (de) | ||
ES2139527B1 (es) | "gato" | |
Friedman | Working out the kinks: Advancing the pornography debate | |
DE29705738U1 (de) | Reinigungs-Dachplatte | |
TH13247S1 (th) | รางสายไฟ | |
TH47652S (th) | รางสายไฟ | |
SE0201003L (sv) | Industrirobot | |
TH47235EX (th) | เทียน(ไฟฟ้า) | |
TH47234EX (th) | เทียน (ไฟฟ้า) | |
TH60435S (th) | อุปกรณ์ทำให้สารเคมีระเหย | |
TH15864S1 (de) | ||
TH47235S (th) | เทียน(ไฟฟ้า) | |
TH15865S1 (th) | เทียน(ไฟฟ้า) | |
TH47234S (de) | ||
TH52273S (th) | ดินสอ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |