DE60314642D1 - Doppelschleifen leseschema für widerstands-speicherzellen - Google Patents

Doppelschleifen leseschema für widerstands-speicherzellen

Info

Publication number
DE60314642D1
DE60314642D1 DE60314642T DE60314642T DE60314642D1 DE 60314642 D1 DE60314642 D1 DE 60314642D1 DE 60314642 T DE60314642 T DE 60314642T DE 60314642 T DE60314642 T DE 60314642T DE 60314642 D1 DE60314642 D1 DE 60314642D1
Authority
DE
Germany
Prior art keywords
signal
resistive element
resistance
voltage
oscillating signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60314642T
Other languages
English (en)
Other versions
DE60314642T2 (de
Inventor
R Jacob Baker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE60314642D1 publication Critical patent/DE60314642D1/de
Application granted granted Critical
Publication of DE60314642T2 publication Critical patent/DE60314642T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Static Random-Access Memory (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
DE60314642T 2002-08-19 2003-07-30 Doppelschleifen leseschema für widerstands-speicherzellen Expired - Lifetime DE60314642T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/222,843 US6829188B2 (en) 2002-08-19 2002-08-19 Dual loop sensing scheme for resistive memory elements
US222843 2002-08-19
PCT/US2003/023794 WO2004017326A2 (en) 2002-08-19 2003-07-30 Dual loop sensing scheme for resistive memory elements

Publications (2)

Publication Number Publication Date
DE60314642D1 true DE60314642D1 (de) 2007-08-09
DE60314642T2 DE60314642T2 (de) 2008-02-28

Family

ID=31715073

Family Applications (3)

Application Number Title Priority Date Filing Date
DE60329130T Expired - Lifetime DE60329130D1 (de) 2002-08-19 2003-07-30 Doppelschleifenleseschaltung für resistive Speicherlemente
DE60314642T Expired - Lifetime DE60314642T2 (de) 2002-08-19 2003-07-30 Doppelschleifen leseschema für widerstands-speicherzellen
DE60314672T Expired - Lifetime DE60314672T2 (de) 2002-08-19 2003-07-30 Doppelschleifenleseschaltung für resistive Speicherelemente

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60329130T Expired - Lifetime DE60329130D1 (de) 2002-08-19 2003-07-30 Doppelschleifenleseschaltung für resistive Speicherlemente

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60314672T Expired - Lifetime DE60314672T2 (de) 2002-08-19 2003-07-30 Doppelschleifenleseschaltung für resistive Speicherelemente

Country Status (10)

Country Link
US (2) US6829188B2 (de)
EP (3) EP1532633B1 (de)
JP (1) JP2005536820A (de)
KR (1) KR100679458B1 (de)
CN (3) CN103366807B (de)
AT (3) ATE365965T1 (de)
AU (1) AU2003254265A1 (de)
DE (3) DE60329130D1 (de)
TW (1) TWI313000B (de)
WO (1) WO2004017326A2 (de)

Families Citing this family (44)

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US6504750B1 (en) * 2001-08-27 2003-01-07 Micron Technology, Inc. Resistive memory element sensing using averaging
US6826102B2 (en) * 2002-05-16 2004-11-30 Micron Technology, Inc. Noise resistant small signal sensing circuit for a memory device
US6882553B2 (en) * 2002-08-08 2005-04-19 Micron Technology Inc. Stacked columnar resistive memory structure and its method of formation and operation
FR2846776A1 (fr) * 2002-10-30 2004-05-07 St Microelectronics Sa Cellule memoire a trois etats
US6980477B2 (en) * 2002-12-07 2005-12-27 Hewlett-Packard Development Company, L.P. Chopper sensor for MRAM
US6826094B1 (en) * 2003-06-02 2004-11-30 Hewlett-Packard Development Company, L.P. Magnetic memory cell sensing with first and second currents
US7042783B2 (en) * 2003-06-18 2006-05-09 Hewlett-Packard Development Company, L.P. Magnetic memory
EP2466382B1 (de) * 2003-07-08 2014-11-26 Nikon Corporation Wafertisch für die Immersionslithografie
US6970387B2 (en) * 2003-09-15 2005-11-29 Hewlett-Packard Development Company, L.P. System and method for determining the value of a memory element
US7663442B2 (en) * 2005-03-28 2010-02-16 Intel Corporation Data receiver including a transconductance amplifier
US8088478B2 (en) * 2005-06-21 2012-01-03 Weyerhaeuser Nr Company Barrier material
US7397689B2 (en) * 2006-08-09 2008-07-08 Micron Technology, Inc. Resistive memory device
US9135962B2 (en) 2007-06-15 2015-09-15 Micron Technology, Inc. Comparators for delta-sigma modulators
US7733262B2 (en) 2007-06-15 2010-06-08 Micron Technology, Inc. Quantizing circuits with variable reference signals
US7818638B2 (en) * 2007-06-15 2010-10-19 Micron Technology, Inc. Systems and devices including memory with built-in self test and methods of making and using the same
US7817073B2 (en) 2007-06-15 2010-10-19 Micron Technology, Inc. Integrators for delta-sigma modulators
US7768868B2 (en) * 2007-06-15 2010-08-03 Micron Technology, Inc. Digital filters for semiconductor devices
US7839703B2 (en) 2007-06-15 2010-11-23 Micron Technology, Inc. Subtraction circuits and digital-to-analog converters for semiconductor devices
US8117520B2 (en) 2007-06-15 2012-02-14 Micron Technology, Inc. Error detection for multi-bit memory
US7667632B2 (en) * 2007-06-15 2010-02-23 Micron Technology, Inc. Quantizing circuits for semiconductor devices
US7969783B2 (en) * 2007-06-15 2011-06-28 Micron Technology, Inc. Memory with correlated resistance
US7830729B2 (en) * 2007-06-15 2010-11-09 Micron Technology, Inc. Digital filters with memory
US7538702B2 (en) 2007-06-15 2009-05-26 Micron Technology, Inc. Quantizing circuits with variable parameters
US8068367B2 (en) 2007-06-15 2011-11-29 Micron Technology, Inc. Reference current sources
JP4656260B2 (ja) * 2008-06-20 2011-03-23 富士通株式会社 受信装置
US7864609B2 (en) * 2008-06-30 2011-01-04 Micron Technology, Inc. Methods for determining resistance of phase change memory elements
US20110140708A1 (en) * 2009-12-11 2011-06-16 William Henry Lueckenbach System, method, and apparatus for providing redundant power control using a digital output module
JP4928618B2 (ja) * 2010-02-03 2012-05-09 日清紡ホールディングス株式会社 蓄電モジュール制御装置
US8194441B2 (en) 2010-09-23 2012-06-05 Micron Technology, Inc. Phase change memory state determination using threshold edge detection
KR101298190B1 (ko) 2011-10-13 2013-08-20 에스케이하이닉스 주식회사 저항성 메모리 장치, 그 레이아웃 구조 및 센싱 회로
US8711646B2 (en) * 2012-05-08 2014-04-29 Samsung Electronics Co., Ltd. Architecture, system and method for testing resistive type memory
US9111622B2 (en) 2012-05-09 2015-08-18 Everspin Technologies, Inc. Self referencing sense amplifier for spin torque MRAM
KR20150022242A (ko) * 2013-08-22 2015-03-04 에스케이하이닉스 주식회사 반도체 메모리 장치
US9761309B2 (en) 2014-02-28 2017-09-12 Hewlett Packard Enterprise Development Lp Sensing circuit for resistive memory array
CN105448331B (zh) * 2014-08-22 2017-12-01 华邦电子股份有限公司 电阻式随机存取存储器电路以及读取方法
KR102431206B1 (ko) * 2015-12-23 2022-08-11 에스케이하이닉스 주식회사 전자 장치
US9721636B1 (en) * 2016-01-28 2017-08-01 Western Digital Technologies, Inc. Method for controlled switching of a MRAM device
KR102476770B1 (ko) * 2016-04-08 2022-12-13 에스케이하이닉스 주식회사 전자 장치
CN106027145A (zh) * 2016-06-27 2016-10-12 佛山市南海区联合广东新光源产业创新中心 一种可见光通信切换及控制方法
CN105978625A (zh) * 2016-06-27 2016-09-28 佛山市南海区联合广东新光源产业创新中心 一种具有电阻阵列的可见光通信装置
GB2555527B (en) * 2016-11-01 2019-06-05 Evonetix Ltd Current Control
JP2018085155A (ja) * 2016-11-21 2018-05-31 東芝メモリ株式会社 磁気メモリ
US10714185B2 (en) 2018-10-24 2020-07-14 Micron Technology, Inc. Event counters for memory operations
CN113035255B (zh) * 2021-03-30 2022-01-07 长江存储科技有限责任公司 存储器及其操作方法、装置、存储介质

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JPH09140126A (ja) * 1995-05-30 1997-05-27 Linear Technol Corp 適応スイッチ回路、適応出力回路、制御回路およびスイッチング電圧レギュレータを動作させる方法
US6038166A (en) * 1998-04-01 2000-03-14 Invox Technology High resolution multi-bit-per-cell memory
DE19914488C1 (de) * 1999-03-30 2000-05-31 Siemens Ag Vorrichtung zur Bewertung der Zellenwiderstände in einem magnetoresistiven Speicher
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
US6433525B2 (en) * 2000-05-03 2002-08-13 Intersil Americas Inc. Dc to DC converter method and circuitry
US6317375B1 (en) * 2000-08-31 2001-11-13 Hewlett-Packard Company Method and apparatus for reading memory cells of a resistive cross point array
DE10059182C2 (de) * 2000-11-29 2002-10-24 Infineon Technologies Ag Schaltungsanordnung zum zerstörungsfreien, selbstnormierenden Auslesen von MRAM-Speicherzellen
US6693826B1 (en) * 2001-07-30 2004-02-17 Iowa State University Research Foundation, Inc. Magnetic memory sensing method and apparatus
US6504750B1 (en) * 2001-08-27 2003-01-07 Micron Technology, Inc. Resistive memory element sensing using averaging
US6577525B2 (en) * 2001-08-28 2003-06-10 Micron Technology, Inc. Sensing method and apparatus for resistance memory device

Also Published As

Publication number Publication date
CN103366807B (zh) 2016-12-28
DE60314672D1 (de) 2007-08-09
DE60329130D1 (de) 2009-10-15
CN101814312B (zh) 2013-08-07
WO2004017326A2 (en) 2004-02-26
CN1689109B (zh) 2011-10-26
CN103366807A (zh) 2013-10-23
KR20050042482A (ko) 2005-05-09
EP1717813B1 (de) 2009-09-02
DE60314642T2 (de) 2008-02-28
US6914838B2 (en) 2005-07-05
AU2003254265A1 (en) 2004-03-03
TWI313000B (en) 2009-08-01
KR100679458B1 (ko) 2007-02-06
US20050013184A1 (en) 2005-01-20
TW200414190A (en) 2004-08-01
EP1667161B1 (de) 2007-06-27
CN1689109A (zh) 2005-10-26
EP1717813A2 (de) 2006-11-02
EP1532633B1 (de) 2007-06-27
ATE441929T1 (de) 2009-09-15
ATE365966T1 (de) 2007-07-15
US20040032760A1 (en) 2004-02-19
JP2005536820A (ja) 2005-12-02
ATE365965T1 (de) 2007-07-15
CN101814312A (zh) 2010-08-25
EP1667161A1 (de) 2006-06-07
EP1717813A3 (de) 2007-02-14
EP1532633A1 (de) 2005-05-25
DE60314672T2 (de) 2008-03-06
US6829188B2 (en) 2004-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition