DE60315535D1 - Platte für Elektronikelement, Elektronikelement, ferrroelektrischer Speicher, elektronisches Gerät, Tintenstrahldruckkopf, und Tintenstrahldrucker - Google Patents
Platte für Elektronikelement, Elektronikelement, ferrroelektrischer Speicher, elektronisches Gerät, Tintenstrahldruckkopf, und TintenstrahldruckerInfo
- Publication number
- DE60315535D1 DE60315535D1 DE60315535T DE60315535T DE60315535D1 DE 60315535 D1 DE60315535 D1 DE 60315535D1 DE 60315535 T DE60315535 T DE 60315535T DE 60315535 T DE60315535 T DE 60315535T DE 60315535 D1 DE60315535 D1 DE 60315535D1
- Authority
- DE
- Germany
- Prior art keywords
- electronic device
- electronic element
- buffer layer
- electronic
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/1051—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/10513—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/10516—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002084327 | 2002-03-25 | ||
JP2002084327 | 2002-03-25 | ||
JP2003044370A JP4859333B2 (ja) | 2002-03-25 | 2003-02-21 | 電子デバイス用基板の製造方法 |
JP2003044370 | 2003-02-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60315535D1 true DE60315535D1 (de) | 2007-09-27 |
DE60315535T2 DE60315535T2 (de) | 2008-05-21 |
Family
ID=27807011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2003615535 Expired - Lifetime DE60315535T2 (de) | 2002-03-25 | 2003-03-25 | Platte für Elektronikelement, Elektronikelement, ferrroelektrischer Speicher, elektronisches Gerät, Tintenstrahldruckkopf, und Tintenstrahldrucker |
Country Status (10)
Country | Link |
---|---|
US (1) | US6984843B2 (de) |
EP (1) | EP1348553B1 (de) |
JP (1) | JP4859333B2 (de) |
CN (1) | CN1238193C (de) |
AT (1) | ATE369986T1 (de) |
CY (1) | CY1106880T1 (de) |
DE (1) | DE60315535T2 (de) |
DK (1) | DK1348553T3 (de) |
ES (1) | ES2289198T3 (de) |
PT (1) | PT1348553E (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3902023B2 (ja) * | 2002-02-19 | 2007-04-04 | セイコーエプソン株式会社 | 圧電アクチュエータ、液滴噴射ヘッド、およびそれを用いた液滴噴射装置 |
JP4120589B2 (ja) * | 2004-01-13 | 2008-07-16 | セイコーエプソン株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
US7596841B2 (en) * | 2004-04-23 | 2009-10-06 | Agency For Science Technology And Research | Micro-electromechanical devices and methods of fabricating thereof |
CN102676993B (zh) * | 2007-03-29 | 2015-03-04 | 株式会社藤仓 | 多晶薄膜和其制造方法及氧化物超导导体 |
US8097175B2 (en) * | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US8404124B2 (en) | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
US20090152684A1 (en) * | 2007-12-18 | 2009-06-18 | Li-Peng Wang | Manufacture-friendly buffer layer for ferroelectric media |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
JP2009208243A (ja) * | 2008-02-29 | 2009-09-17 | Seiko Epson Corp | 圧電装置およびその製造方法、液体噴射ヘッド、並びに、プリンタ |
JP4977641B2 (ja) * | 2008-03-03 | 2012-07-18 | 富士フイルム株式会社 | 機能性酸化物構造体 |
JP4977640B2 (ja) * | 2008-03-03 | 2012-07-18 | 富士フイルム株式会社 | 機能性酸化物構造体、及び機能性酸化物構造体の製造方法 |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
JPWO2010097862A1 (ja) | 2009-02-24 | 2012-08-30 | パナソニック株式会社 | 半導体メモリセル及びその製造方法並びに半導体記憶装置 |
JP5491757B2 (ja) * | 2009-03-27 | 2014-05-14 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
JP2011086903A (ja) * | 2009-09-15 | 2011-04-28 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置及び圧電素子 |
CN103210515B (zh) * | 2010-09-15 | 2015-06-03 | 株式会社理光 | 机电转换器件及其制造方法及液滴排出头和液滴排出设备 |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
TWI431641B (zh) * | 2011-12-16 | 2014-03-21 | Juant Technology Co Ltd | 被動元件之結構 |
US10141497B2 (en) * | 2012-07-31 | 2018-11-27 | Hewlett-Packard Development Company, L.P. | Thin film stack |
JP2014154632A (ja) * | 2013-02-06 | 2014-08-25 | Rohm Co Ltd | 多層構造体、コンデンサ素子およびその製造方法 |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
JP6244865B2 (ja) * | 2013-12-09 | 2017-12-13 | 船井電機株式会社 | 振動ミラー素子 |
JP6618168B2 (ja) * | 2015-02-13 | 2019-12-11 | 新科實業有限公司SAE Magnetics(H.K.)Ltd. | 薄膜圧電体基板、薄膜圧電体素子およびその製造方法 |
JP6910631B2 (ja) * | 2016-11-15 | 2021-07-28 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
US11039814B2 (en) * | 2016-12-04 | 2021-06-22 | Exo Imaging, Inc. | Imaging devices having piezoelectric transducers |
JP6859805B2 (ja) * | 2017-03-30 | 2021-04-14 | Tdk株式会社 | 積層体、熱電変換素子 |
JP2019041054A (ja) * | 2017-08-28 | 2019-03-14 | 東芝メモリ株式会社 | 半導体装置 |
JP7363067B2 (ja) | 2019-03-19 | 2023-10-18 | 株式会社リコー | 圧電体薄膜素子、液体吐出ヘッド、ヘッドモジュール、液体吐出ユニット、液体を吐出する装置及び圧電体薄膜素子の製造方法 |
JP2022057129A (ja) * | 2020-09-30 | 2022-04-11 | 株式会社リコー | アクチュエータ、液体吐出ヘッド及び液体吐出装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2670391B2 (ja) | 1991-04-30 | 1997-10-29 | 株式会社フジクラ | 多結晶薄膜の製造装置 |
JP2614948B2 (ja) | 1991-04-30 | 1997-05-28 | 株式会社フジクラ | 多結晶薄膜 |
US5650378A (en) * | 1992-10-02 | 1997-07-22 | Fujikura Ltd. | Method of making polycrystalline thin film and superconducting oxide body |
JP2996568B2 (ja) | 1992-10-30 | 2000-01-11 | 株式会社フジクラ | 多結晶薄膜の製造方法および酸化物超電導導体の製造方法 |
JP3415888B2 (ja) | 1993-08-25 | 2003-06-09 | 株式会社フジクラ | 多結晶薄膜の製造装置と製造方法および酸化物超電導導体の製造方法 |
JPH07286897A (ja) * | 1994-04-16 | 1995-10-31 | Horiba Ltd | 焦電型赤外線素子およびその製造方法 |
CA2225681C (en) * | 1995-06-28 | 2001-09-11 | Bell Communications Research, Inc. | Barrier layer for ferroelectric capacitor integrated on silicon |
US5753934A (en) * | 1995-08-04 | 1998-05-19 | Tok Corporation | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
JPH09256152A (ja) | 1996-03-19 | 1997-09-30 | Mitsuba Corp | 整列イオンビームアシスト成膜法 |
JP3856878B2 (ja) | 1996-10-15 | 2006-12-13 | 株式会社フジクラ | 多結晶薄膜の製造方法 |
JP4059963B2 (ja) | 1996-10-23 | 2008-03-12 | 株式会社フジクラ | 酸化物超電導導体の製造方法 |
DE19750598A1 (de) | 1996-12-18 | 1998-06-25 | Siemens Ag | Erzeugnis mit einem Substrat aus einem teilstabilisierten Zirkonoxid und einer Pufferschicht aus einem vollstabilisierten Zirkonoxid sowie Verfahren zu seiner Herstellung |
JPH1149599A (ja) | 1997-08-01 | 1999-02-23 | Fujikura Ltd | 多結晶薄膜とその製造方法および酸化物超電導導体とその製造方法 |
JP3771027B2 (ja) | 1997-12-25 | 2006-04-26 | 株式会社フジクラ | 配向制御多結晶薄膜の蒸着方法及び蒸着装置 |
JP2000203836A (ja) | 1999-01-11 | 2000-07-25 | Fujikura Ltd | 酸化物超電導導体の製造方法 |
US6303042B1 (en) * | 1999-03-02 | 2001-10-16 | Eastman Kodak Company | Making ink jet nozzle plates |
JP4131771B2 (ja) | 1999-10-18 | 2008-08-13 | 株式会社フジクラ | 多結晶薄膜とその製造方法および酸化物超電導導体 |
US6537689B2 (en) * | 1999-11-18 | 2003-03-25 | American Superconductor Corporation | Multi-layer superconductor having buffer layer with oriented termination plane |
JP3901894B2 (ja) | 1999-11-29 | 2007-04-04 | 株式会社フジクラ | 多結晶薄膜とその製造方法およびこれを用いた酸化物超電導導体 |
US6555946B1 (en) * | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
EP1199171A3 (de) * | 2000-10-16 | 2003-04-09 | Seiko Epson Corporation | Tintenstrahlaufzeichnungskopf und Tintenstrahlaufzeichnungsapparat |
US6563118B2 (en) * | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
JP4058971B2 (ja) * | 2001-03-26 | 2008-03-12 | セイコーエプソン株式会社 | 強誘電体メモリ及び電子機器 |
JP2003142479A (ja) * | 2001-11-02 | 2003-05-16 | Fujitsu Ltd | 半導体装置、エピタキシャル膜の製造方法、およびレーザアブレーション装置 |
-
2003
- 2003-02-21 JP JP2003044370A patent/JP4859333B2/ja not_active Expired - Fee Related
- 2003-03-21 CN CNB031072852A patent/CN1238193C/zh not_active Expired - Fee Related
- 2003-03-25 ES ES03006728T patent/ES2289198T3/es not_active Expired - Lifetime
- 2003-03-25 AT AT03006728T patent/ATE369986T1/de active
- 2003-03-25 DE DE2003615535 patent/DE60315535T2/de not_active Expired - Lifetime
- 2003-03-25 US US10/396,732 patent/US6984843B2/en not_active Expired - Lifetime
- 2003-03-25 PT PT03006728T patent/PT1348553E/pt unknown
- 2003-03-25 DK DK03006728T patent/DK1348553T3/da active
- 2003-03-25 EP EP20030006728 patent/EP1348553B1/de not_active Expired - Lifetime
-
2007
- 2007-09-19 CY CY071101210T patent/CY1106880T1/el unknown
Also Published As
Publication number | Publication date |
---|---|
ES2289198T3 (es) | 2008-02-01 |
ATE369986T1 (de) | 2007-09-15 |
CY1106880T1 (el) | 2012-09-26 |
EP1348553B1 (de) | 2007-08-15 |
JP4859333B2 (ja) | 2012-01-25 |
DE60315535T2 (de) | 2008-05-21 |
JP2004002150A (ja) | 2004-01-08 |
CN1238193C (zh) | 2006-01-25 |
PT1348553E (pt) | 2007-10-23 |
US6984843B2 (en) | 2006-01-10 |
US20030218644A1 (en) | 2003-11-27 |
CN1446690A (zh) | 2003-10-08 |
EP1348553A1 (de) | 2003-10-01 |
DK1348553T3 (da) | 2007-12-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |