DE60320292D1 - Antireflexzusammensetzungen mit triazinverbindungen - Google Patents

Antireflexzusammensetzungen mit triazinverbindungen

Info

Publication number
DE60320292D1
DE60320292D1 DE60320292T DE60320292T DE60320292D1 DE 60320292 D1 DE60320292 D1 DE 60320292D1 DE 60320292 T DE60320292 T DE 60320292T DE 60320292 T DE60320292 T DE 60320292T DE 60320292 D1 DE60320292 D1 DE 60320292D1
Authority
DE
Germany
Prior art keywords
light
reflective coating
triazine compounds
coating composition
antireflex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60320292T
Other languages
English (en)
Other versions
DE60320292T2 (de
Inventor
Tomoyuki Enomoto
Keisuke Nakayama
Rama Puligadda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brewer Science Inc
Original Assignee
Brewer Science Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brewer Science Inc filed Critical Brewer Science Inc
Application granted granted Critical
Publication of DE60320292D1 publication Critical patent/DE60320292D1/de
Publication of DE60320292T2 publication Critical patent/DE60320292T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon
DE2003620292 2002-10-15 2003-09-19 Antireflexzusammensetzungen mit triazinverbindungen Expired - Lifetime DE60320292T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/271,646 US7038328B2 (en) 2002-10-15 2002-10-15 Anti-reflective compositions comprising triazine compounds
US271646 2002-10-15
PCT/US2003/029819 WO2004036311A2 (en) 2002-10-15 2003-09-19 Anti-reflective compositions comprising triazine compounds

Publications (2)

Publication Number Publication Date
DE60320292D1 true DE60320292D1 (de) 2008-05-21
DE60320292T2 DE60320292T2 (de) 2009-07-16

Family

ID=32069181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2003620292 Expired - Lifetime DE60320292T2 (de) 2002-10-15 2003-09-19 Antireflexzusammensetzungen mit triazinverbindungen

Country Status (9)

Country Link
US (1) US7038328B2 (de)
EP (1) EP1556896B1 (de)
JP (1) JP4399364B2 (de)
KR (1) KR101011841B1 (de)
AT (1) ATE392011T1 (de)
AU (1) AU2003278870A1 (de)
DE (1) DE60320292T2 (de)
TW (1) TWI303013B (de)
WO (1) WO2004036311A2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100804873B1 (ko) 1999-06-10 2008-02-20 얼라이드시그날 인코퍼레이티드 포토리소그래피용 ｓｏｇ 반사방지 코팅
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
WO2003044600A1 (en) 2001-11-15 2003-05-30 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
JP4487489B2 (ja) * 2002-09-20 2010-06-23 三菱電機株式会社 埋込材およびこの埋込材を用いた半導体集積回路の製造方法
GB2400245B (en) * 2003-04-01 2005-09-28 Power Gems Ltd Ignition system for a high-frequency high-intensity discharge lamp system
EP2343597B1 (de) * 2003-04-02 2015-08-05 Nissan Chemical Industries, Ltd. Die Verwendung von einer Zusammensetzung zur Bildung eines Unterschichtfilms für die Lithographie
EP1649322A4 (de) 2003-07-17 2007-09-19 Honeywell Int Inc Planarisierungsfilme für fortschrittliche mikroelektronsiche anwendungen und einrichtungen und herstellungsverfahren dafür
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7361455B2 (en) * 2004-03-31 2008-04-22 Intel Corporation Anti-reflective coatings
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
KR100966197B1 (ko) * 2004-12-03 2010-06-25 제이에스알 가부시끼가이샤 반사 방지막 형성용 조성물, 적층체 및 레지스트 패턴의형성 방법
WO2006096221A1 (en) * 2004-12-16 2006-09-14 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
EP1691238A3 (de) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
JP4595606B2 (ja) * 2005-03-17 2010-12-08 Ｊｓｒ株式会社 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
US20060292501A1 (en) * 2005-06-24 2006-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography process with an enhanced depth-on-focus
US7553905B2 (en) * 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
KR100843890B1 (ko) * 2005-11-07 2008-07-03 주식회사 하이닉스반도체 리소그래피 공정의 시뮬레이션 방법
KR100713231B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR101316192B1 (ko) * 2006-08-04 2013-10-08 동우 화인켐 주식회사 포토레지스트 조성물 및 이의 패턴 형성 방법
KR101365275B1 (ko) 2006-10-13 2014-02-26 제이에스알 가부시끼가이샤 상층막 형성용 조성물 및 포토레지스트 패턴 형성 방법
US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
KR100886314B1 (ko) * 2007-06-25 2009-03-04 금호석유화학 주식회사 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
JP4993139B2 (ja) * 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
US8329387B2 (en) * 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
JP5177418B2 (ja) * 2008-12-12 2013-04-03 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8883407B2 (en) * 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
US8507192B2 (en) * 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP6160068B2 (ja) * 2011-12-16 2017-07-12 Jsr株式会社 レジスト下層膜形成用樹脂組成物、レジスト下層膜、その形成方法及びパターン形成方法
US20130213894A1 (en) 2012-02-17 2013-08-22 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
JP5977361B2 (ja) 2012-02-20 2016-08-24 エルジー・ケム・リミテッド 光硬化性および熱硬化性を有する樹脂組成物と、ドライフィルムソルダレジスト
KR102093828B1 (ko) * 2013-12-27 2020-03-26 닛산 가가쿠 가부시키가이샤 트리아진환 및 황원자를 주쇄에 갖는 공중합체를 포함하는 레지스트 하층막 형성 조성물
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
JP7029112B2 (ja) * 2016-09-16 2022-03-03 日産化学株式会社 保護膜形成組成物
JPWO2019039355A1 (ja) * 2017-08-24 2020-07-30 日産化学株式会社 レジスト下層膜形成組成物

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1264880A (en) * 1984-07-06 1990-01-23 John Brooke Gardiner Viscosity index improver - dispersant additive useful in oil compositions
US5094765A (en) * 1990-04-30 1992-03-10 Texaco Inc. Lubricating oil composition
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5578676A (en) * 1992-02-12 1996-11-26 Flaim; Tony Method for making polymers with intrinsic light-absorbing properties
US5731385A (en) * 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
JP2953562B2 (ja) * 1994-07-18 1999-09-27 東京応化工業株式会社 リソグラフィー用下地材及びそれを用いた多層レジスト材料
GB9508879D0 (en) 1995-05-02 1995-06-21 Ici Plc Dye diffusion thermal transfer printing
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
JP3436843B2 (ja) * 1996-04-25 2003-08-18 東京応化工業株式会社 リソグラフィー用下地材及びそれを用いたリソグラフィー用レジスト材料
JP3053072B2 (ja) * 1996-09-10 2000-06-19 東京応化工業株式会社 レジスト積層体及びそれを用いたパターン形成方法
JPH10120940A (ja) 1996-10-18 1998-05-12 Fuji Photo Film Co Ltd 反射防止膜用組成物
US5948847A (en) * 1996-12-13 1999-09-07 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic patterning
JPH1165125A (ja) * 1997-08-21 1999-03-05 Tokyo Ohka Kogyo Co Ltd パターン形成方法
JP3177639B2 (ja) 1997-09-22 2001-06-18 林野庁森林総合研究所長 木材、竹等の繊維割り裂き装置。
US6156479A (en) * 1997-09-30 2000-12-05 Brewer Science, Inc. Thermosetting anti-refective coatings
US5919599A (en) 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
US5935760A (en) 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
CA2330689A1 (en) 1998-04-29 1999-11-04 Brewer Science, Inc. Fast-etching, thermosetting anti-reflective coatings derived from cellulosic binders
JP3715454B2 (ja) * 1999-01-28 2005-11-09 東京応化工業株式会社 リソグラフィー用下地材
TW476865B (en) * 1999-01-28 2002-02-21 Tokyo Ohka Kogyo Co Ltd Undercoating composition for photolithographic resist
US6544717B2 (en) * 1999-01-28 2003-04-08 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic resist
US6323310B1 (en) * 2000-04-19 2001-11-27 Brewer Science, Inc. Anti-reflective coating compositions comprising polymerized aminoplasts
JP3568158B2 (ja) * 2000-12-20 2004-09-22 東京応化工業株式会社 保護膜形成材料
JP3932805B2 (ja) * 2000-12-25 2007-06-20 株式会社日立製作所 フォトマスク及びそれを用いた電子デバイスの製造方法
US7150899B2 (en) * 2002-11-05 2006-12-19 Kansai Paint Co., Ltd. Method for forming coating film on plastic substrate

Also Published As

Publication number Publication date
WO2004036311A3 (en) 2004-12-09
DE60320292T2 (de) 2009-07-16
TW200413839A (en) 2004-08-01
TWI303013B (en) 2008-11-11
JP2006503331A (ja) 2006-01-26
AU2003278870A8 (en) 2004-05-04
KR101011841B1 (ko) 2011-01-31
KR20050074962A (ko) 2005-07-19
WO2004036311A2 (en) 2004-04-29
US20040072420A1 (en) 2004-04-15
EP1556896A2 (de) 2005-07-27
EP1556896B1 (de) 2008-04-09
US7038328B2 (en) 2006-05-02
ATE392011T1 (de) 2008-04-15
AU2003278870A1 (en) 2004-05-04
JP4399364B2 (ja) 2010-01-13
EP1556896A4 (de) 2007-05-09

Similar Documents

Publication Publication Date Title
TWI303013B (en) Anti-reflective compositions comprising triazine compounds
KR101163113B1 (ko) 유황 원자를 함유하는 반사 방지막
ATE546759T1 (de) Reflexionsmaskenrohling für euv-lithographie
WO2003017002A1 (fr) Composition permettant la formation d'un film anti-reflechissant destine a etre utilise en lithographie
JP2006503331A5 (de)
TW200608144A (en) Photoresist undercoat-forming material and patterning process
MY146807A (en) Antireflective coating compositions
TW200734825A (en) Silicon-containing resist underlayer coating forming composition for forming resist under-layer coating of photo-crosslink cure
JP2008524650A5 (de)
TW201928524A (zh) 抗蝕劑底層組成物及使用所述組成物形成圖案的方法
WO2008082942A3 (en) High-z structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels
TW200612204A (en) Silicon rich dielectric antireflective coating
TW200622497A (en) Anti-reflective coating-forming composition containing sulfur atom for lithography
KR20150105954A (ko) 레지스트 하층막 형성 조성물
EP1703327B1 (de) Zusammensetzung zur Bildung einer Antireflexschicht, Laminat und Verfahren zur Bildung einer Resiststruktur
CN1237399C (zh) 有机抗反射涂层组合物和用该组合物形成光阻图案的方法
PE20050426A1 (es) Proceso para preparar un material compuesto que comprende un sustrato y una capa sobre el sustrato
KR102511277B1 (ko) 아미드 용매를 포함하는 레지스트 하층막 형성조성물
JP7056651B2 (ja) フルオレン化合物を用いたレジスト下層膜形成組成物
EP3394675B1 (de) Materialien mit metalloxiden, verfahren zur herstellung davon und verfahren zur verwendung davon
KR101775586B1 (ko) 하드마스크용 조성물
JP4434984B2 (ja) パターン形成方法及びパターン形成材料
KR102516390B1 (ko) 신규한 티오바르비투르산 유도체, 이로부터 유도되는 반복 단위를 포함하는 중합체, 이를 포함하는 바닥반사방지막용 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
KR20220091424A (ko) 반사 방지 페인트 조성물과 그 응용, 및 코팅 제품
JP2023521230A (ja) 炭素材料、金属有機化合物および溶媒を含んでなるスピンコーティング組成物、および基板の上方への金属酸化物膜の製造方法

Legal Events

Date Code Title Description
8364 No opposition during term of opposition