DE60328053D1 - VCSEL auf InP Basis mit Zink-dotiertem Tunnelübergang und einer Schicht zur Diffusionsverhinderung - Google Patents

VCSEL auf InP Basis mit Zink-dotiertem Tunnelübergang und einer Schicht zur Diffusionsverhinderung

Info

Publication number
DE60328053D1
DE60328053D1 DE60328053T DE60328053T DE60328053D1 DE 60328053 D1 DE60328053 D1 DE 60328053D1 DE 60328053 T DE60328053 T DE 60328053T DE 60328053 T DE60328053 T DE 60328053T DE 60328053 D1 DE60328053 D1 DE 60328053D1
Authority
DE
Germany
Prior art keywords
inp
zinc
layer
tunnel junction
diffusion prevention
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60328053T
Other languages
English (en)
Inventor
David Bour
Chaokun Lin
Michael Tan
Bill Perez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies General IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies General IP Singapore Pte Ltd filed Critical Avago Technologies General IP Singapore Pte Ltd
Application granted granted Critical
Publication of DE60328053D1 publication Critical patent/DE60328053D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
DE60328053T 2003-02-13 2003-10-23 VCSEL auf InP Basis mit Zink-dotiertem Tunnelübergang und einer Schicht zur Diffusionsverhinderung Expired - Fee Related DE60328053D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/367,200 US7180923B2 (en) 2003-02-13 2003-02-13 Laser employing a zinc-doped tunnel-junction

Publications (1)

Publication Number Publication Date
DE60328053D1 true DE60328053D1 (de) 2009-07-30

Family

ID=32681750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328053T Expired - Fee Related DE60328053D1 (de) 2003-02-13 2003-10-23 VCSEL auf InP Basis mit Zink-dotiertem Tunnelübergang und einer Schicht zur Diffusionsverhinderung

Country Status (4)

Country Link
US (1) US7180923B2 (de)
EP (2) EP1447892A1 (de)
JP (1) JP2004247728A (de)
DE (1) DE60328053D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7136406B2 (en) * 2003-07-03 2006-11-14 Finisar Corporation Pseudomorphic layer in tunnel junction VCSEL
US7123638B2 (en) * 2003-10-17 2006-10-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant
US7099362B2 (en) * 2003-11-14 2006-08-29 Finisar Corporation Modulation doped tunnel junction
WO2006131316A1 (en) * 2005-06-08 2006-12-14 Firecomms Limited Surface emitting optical devices
US20070019696A1 (en) * 2005-07-22 2007-01-25 Li-Hung Lai Vertical cavity surface emitting laser and method for fabricating the same
JP4172505B2 (ja) * 2006-06-29 2008-10-29 住友電気工業株式会社 面発光型半導体素子及び面発光型半導体素子の製造方法
CN100547867C (zh) * 2006-12-01 2009-10-07 中国科学院半导体研究所 含高掺杂隧道结的垂直腔面发射激光器
JP2009038310A (ja) * 2007-08-03 2009-02-19 Sumitomo Electric Ind Ltd 面発光型半導体光デバイス
JP5091177B2 (ja) * 2009-03-19 2012-12-05 株式会社デンソー 半導体レーザ構造
JP2015038934A (ja) * 2013-08-19 2015-02-26 キヤノン株式会社 面発光レーザ、およびそれを有する光干渉断層計
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
US11152767B1 (en) * 2020-06-02 2021-10-19 Seminex Corporation AlInGaAs/InGaAsP/InP edge emitting semiconductor laser including multiple monolithic laser diodes
CN111628021B (zh) * 2020-06-03 2021-11-23 苏州长光华芯光电技术股份有限公司 一种半导体器件和制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528071A (en) * 1990-01-18 1996-06-18 Russell; Jimmie L. P-I-N photodiode with transparent conductor n+layer
US5800630A (en) * 1993-04-08 1998-09-01 University Of Houston Tandem solar cell with indium phosphide tunnel junction
JPH0955522A (ja) 1995-08-10 1997-02-25 Japan Energy Corp トンネルダイオード
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure
FR2744293B1 (fr) * 1996-01-30 1998-04-30 Nabet Bernard Composant d'emission laser a zone d'injection de largeur limitee
US5805624A (en) * 1996-07-30 1998-09-08 Hewlett-Packard Company Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
FR2761822B1 (fr) * 1997-04-03 1999-05-07 Alsthom Cge Alcatel Laser semiconducteur a emission de surface
DE19723677A1 (de) 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
US6653158B2 (en) * 2000-08-22 2003-11-25 The Regents Of The University Of California Double intracavity contacted long-wavelength VCSELs and method of fabricating same
US6542531B2 (en) * 2001-03-15 2003-04-01 Ecole Polytechnique Federale De Lausanne Vertical cavity surface emitting laser and a method of fabrication thereof

Also Published As

Publication number Publication date
JP2004247728A (ja) 2004-09-02
US20040161013A1 (en) 2004-08-19
EP1447892A1 (de) 2004-08-18
EP1679774B1 (de) 2009-06-17
EP1679774A2 (de) 2006-07-12
EP1679774A3 (de) 2006-07-26
US7180923B2 (en) 2007-02-20

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee