DE60332426D1 - Zerstörungsfreie einmal programmierbare speicherzelle - Google Patents

Zerstörungsfreie einmal programmierbare speicherzelle

Info

Publication number
DE60332426D1
DE60332426D1 DE60332426T DE60332426T DE60332426D1 DE 60332426 D1 DE60332426 D1 DE 60332426D1 DE 60332426 T DE60332426 T DE 60332426T DE 60332426 T DE60332426 T DE 60332426T DE 60332426 D1 DE60332426 D1 DE 60332426D1
Authority
DE
Germany
Prior art keywords
memory cell
cell programmable
destructible
destructible memory
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60332426T
Other languages
English (en)
Inventor
Luc Wuidart
Michel Bardouillet
Alexandre Malherbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0201637A external-priority patent/FR2836750A1/fr
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE60332426D1 publication Critical patent/DE60332426D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
DE60332426T 2002-02-11 2003-02-11 Zerstörungsfreie einmal programmierbare speicherzelle Expired - Lifetime DE60332426D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0201637A FR2836750A1 (fr) 2002-02-11 2002-02-11 Cellule memoire a programmation unique non destructrice
FR0213555A FR2836751A1 (fr) 2002-02-11 2002-10-29 Cellule memoire a programmation unique non destructrice
PCT/FR2003/000446 WO2003069630A2 (fr) 2002-02-11 2003-02-11 Cellule memoire a programmation unique non destructrice

Publications (1)

Publication Number Publication Date
DE60332426D1 true DE60332426D1 (de) 2010-06-17

Family

ID=27736156

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60332426T Expired - Lifetime DE60332426D1 (de) 2002-02-11 2003-02-11 Zerstörungsfreie einmal programmierbare speicherzelle

Country Status (6)

Country Link
US (1) US7110277B2 (de)
EP (1) EP1476878B1 (de)
AU (1) AU2003226879A1 (de)
DE (1) DE60332426D1 (de)
FR (1) FR2836751A1 (de)
WO (1) WO2003069630A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2846776A1 (fr) * 2002-10-30 2004-05-07 St Microelectronics Sa Cellule memoire a trois etats
US7236418B2 (en) * 2004-06-25 2007-06-26 Qualcomm Incorporated Reduced area, reduced programming voltage CMOS eFUSE-based scannable non-volatile memory bitcell
DE102005019587B4 (de) 2005-04-27 2007-05-10 Infineon Technologies Ag Fuse-Speicherzelle mit verbessertem Schutz gegen unberechtigten Zugriff
US20080062738A1 (en) * 2006-09-08 2008-03-13 Florian Schamberger Storage element and method for operating a storage element
US20090003083A1 (en) * 2007-06-28 2009-01-01 Sandisk 3D Llc Memory cell with voltage modulated sidewall poly resistor
US8050129B2 (en) * 2009-06-25 2011-11-01 Mediatek Inc. E-fuse apparatus for controlling reference voltage required for programming/reading e-fuse macro in an integrated circuit via switch device in the same integrated circuit
TWI469149B (zh) * 2010-04-09 2015-01-11 Realtek Semiconductor Corp 電子熔絲系統
CN103730161B (zh) * 2013-12-23 2017-06-06 深圳国微技术有限公司 一种安全芯片抗攻击的安全电路及采用该安全电路的安全芯片
US9613714B1 (en) * 2016-01-19 2017-04-04 Ememory Technology Inc. One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method

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Publication number Priority date Publication date Assignee Title
US3761896A (en) * 1972-04-18 1973-09-25 Ibm Memory array of cells containing bistable switchable resistors
US3863231A (en) 1973-07-23 1975-01-28 Nat Res Dev Read only memory with annular fuse links
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
US4132904A (en) 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4175290A (en) 1977-07-28 1979-11-20 Hughes Aircraft Company Integrated semiconductor memory array having improved logic latch circuitry
JPS5498536A (en) * 1978-01-23 1979-08-03 Nippon Telegr & Teleph Corp <Ntt> Memory unit of polycrystal silicon resistor
JPS5685934A (en) * 1979-12-14 1981-07-13 Nippon Telegr & Teleph Corp <Ntt> Control signal generating circuit
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
US4342102A (en) 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
JPS5856199B2 (ja) 1980-09-25 1983-12-13 株式会社東芝 半導体記憶装置
US4404581A (en) 1980-12-15 1983-09-13 Rockwell International Corporation ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells
US4449203A (en) * 1981-02-25 1984-05-15 Motorola, Inc. Memory with reference voltage generator
FR2523357B1 (fr) * 1982-03-15 1988-03-04 Thomson Csf Matrice d'elements a memoire integres, a double couche de silicium polycristallin de haute resistivite et procede de fabrication
US4590589A (en) * 1982-12-21 1986-05-20 Zoran Corporation Electrically programmable read only memory
US5504760A (en) * 1991-03-15 1996-04-02 Sandisk Corporation Mixed data encoding EEPROM system
US5334880A (en) 1991-04-30 1994-08-02 International Business Machines Corporation Low voltage programmable storage element
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
FR2715782B1 (fr) 1994-01-31 1996-03-22 Sgs Thomson Microelectronics Bascule bistable non volatile programmable, à état initial prédéfini, notamment pour circuit de redondance de mémoire.
EP0753859B1 (de) * 1995-07-14 2000-01-26 STMicroelectronics S.r.l. Verfahren zur Einstellung der Schwellspannung einer Referenzspeicherzelle
US5689455A (en) * 1995-08-31 1997-11-18 Micron Technology, Inc. Circuit for programming antifuse bits
KR0174501B1 (ko) * 1995-12-19 1999-04-15 김광호 아날로그 저장매체의 프로그래밍 장치
US5863231A (en) * 1997-05-19 1999-01-26 Strong; Jeffrey W. Underwater exhaust system for marine engine
US5926409A (en) * 1997-09-05 1999-07-20 Information Storage Devices, Inc. Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application
US5936880A (en) * 1997-11-13 1999-08-10 Vlsi Technology, Inc. Bi-layer programmable resistor memory
GB2338808B (en) * 1998-06-23 2002-02-27 Mitel Semiconductor Ltd Semiconductor memories
US6191989B1 (en) 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6960819B2 (en) * 2000-12-20 2005-11-01 Broadcom Corporation System and method for one-time programmed memory through direct-tunneling oxide breakdown
ATE446578T1 (de) * 2002-12-12 2009-11-15 Nxp Bv Einmal programmierbare speicheranordnung
US7002829B2 (en) * 2003-09-30 2006-02-21 Agere Systems Inc. Apparatus and method for programming a one-time programmable memory device

Also Published As

Publication number Publication date
US7110277B2 (en) 2006-09-19
FR2836751A1 (fr) 2003-09-05
WO2003069630A2 (fr) 2003-08-21
WO2003069630A3 (fr) 2004-05-06
EP1476878A2 (de) 2004-11-17
EP1476878B1 (de) 2010-05-05
US20050122759A1 (en) 2005-06-09
AU2003226879A1 (en) 2003-09-04

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Legal Events

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8364 No opposition during term of opposition