DE60334566D1 - Fehlerbehebung für nichtflüchtige speicher - Google Patents

Fehlerbehebung für nichtflüchtige speicher

Info

Publication number
DE60334566D1
DE60334566D1 DE60334566T DE60334566T DE60334566D1 DE 60334566 D1 DE60334566 D1 DE 60334566D1 DE 60334566 T DE60334566 T DE 60334566T DE 60334566 T DE60334566 T DE 60334566T DE 60334566 D1 DE60334566 D1 DE 60334566D1
Authority
DE
Germany
Prior art keywords
marginal
memory cells
troubleshooting
volatile memory
voltage threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60334566T
Other languages
English (en)
Inventor
Loc Tu
Jian Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60334566D1 publication Critical patent/DE60334566D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage
DE60334566T 2002-12-12 2003-12-09 Fehlerbehebung für nichtflüchtige speicher Expired - Lifetime DE60334566D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/318,621 US6829167B2 (en) 2002-12-12 2002-12-12 Error recovery for nonvolatile memory
PCT/US2003/039271 WO2004055830A1 (en) 2002-12-12 2003-12-09 Error recovery for nonvolatile memory

Publications (1)

Publication Number Publication Date
DE60334566D1 true DE60334566D1 (de) 2010-11-25

Family

ID=32506411

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60334566T Expired - Lifetime DE60334566D1 (de) 2002-12-12 2003-12-09 Fehlerbehebung für nichtflüchtige speicher

Country Status (10)

Country Link
US (2) US6829167B2 (de)
EP (1) EP1570490B1 (de)
JP (1) JP4778236B2 (de)
KR (1) KR101108088B1 (de)
CN (1) CN1745432B (de)
AT (1) ATE484833T1 (de)
AU (1) AU2003297825A1 (de)
DE (1) DE60334566D1 (de)
TW (1) TWI321795B (de)
WO (1) WO2004055830A1 (de)

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US6829167B2 (en) 2004-12-07
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US7099194B2 (en) 2006-08-29
AU2003297825A1 (en) 2004-07-09
CN1745432B (zh) 2011-12-14
CN1745432A (zh) 2006-03-08
JP2006510155A (ja) 2006-03-23
KR101108088B1 (ko) 2012-01-31
TW200506957A (en) 2005-02-16
EP1570490A1 (de) 2005-09-07
US20050094440A1 (en) 2005-05-05
KR20050098838A (ko) 2005-10-12
WO2004055830A1 (en) 2004-07-01
US20040114432A1 (en) 2004-06-17
TWI321795B (en) 2010-03-11
EP1570490B1 (de) 2010-10-13

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