DE60335475D1 - Verfahren und systeme für verbesserten grenzkontrast - Google Patents
Verfahren und systeme für verbesserten grenzkontrastInfo
- Publication number
- DE60335475D1 DE60335475D1 DE60335475T DE60335475T DE60335475D1 DE 60335475 D1 DE60335475 D1 DE 60335475D1 DE 60335475 T DE60335475 T DE 60335475T DE 60335475 T DE60335475 T DE 60335475T DE 60335475 D1 DE60335475 D1 DE 60335475D1
- Authority
- DE
- Germany
- Prior art keywords
- systems
- improved border
- border contrast
- contrast
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S359/00—Optical: systems and elements
- Y10S359/904—Micromirror
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41550902P | 2002-10-01 | 2002-10-01 | |
US44441703P | 2003-02-03 | 2003-02-03 | |
US45536403P | 2003-03-17 | 2003-03-17 | |
US10/462,010 US7106490B2 (en) | 2001-12-14 | 2003-06-12 | Methods and systems for improved boundary contrast |
PCT/SE2003/001509 WO2004031831A1 (en) | 2002-10-01 | 2003-09-29 | Methods and systems for improved boundary contrast |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60335475D1 true DE60335475D1 (de) | 2011-02-03 |
Family
ID=32074648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60335475T Expired - Lifetime DE60335475D1 (de) | 2002-10-01 | 2003-09-29 | Verfahren und systeme für verbesserten grenzkontrast |
Country Status (7)
Country | Link |
---|---|
US (2) | US7106490B2 (de) |
EP (1) | EP1546788B1 (de) |
JP (1) | JP4376228B2 (de) |
KR (1) | KR101052653B1 (de) |
AU (1) | AU2003265190A1 (de) |
DE (1) | DE60335475D1 (de) |
WO (1) | WO2004031831A1 (de) |
Families Citing this family (54)
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US6627863B2 (en) * | 2000-12-15 | 2003-09-30 | Mitutoyo Corporation | System and methods to determine the settings of multiple light sources in a vision system |
SE0104238D0 (sv) * | 2001-12-14 | 2001-12-14 | Micronic Laser Systems Ab | Method and apparatus for patterning a workpiece |
US20030233630A1 (en) * | 2001-12-14 | 2003-12-18 | Torbjorn Sandstrom | Methods and systems for process control of corner feature embellishment |
US6876440B1 (en) * | 2003-09-30 | 2005-04-05 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap of exposure zones with attenuation of the aerial image in the overlap region |
US7410736B2 (en) * | 2003-09-30 | 2008-08-12 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones |
US7023526B2 (en) * | 2003-09-30 | 2006-04-04 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap without an explicit attenuation |
US7003758B2 (en) * | 2003-10-07 | 2006-02-21 | Brion Technologies, Inc. | System and method for lithography simulation |
US7270942B2 (en) * | 2003-10-22 | 2007-09-18 | Lsi Corporation | Optimized mirror design for optical direct write |
US7215460B2 (en) * | 2003-11-01 | 2007-05-08 | Fusao Ishii | Sequence and timing control of writing and rewriting pixel memories for achieving higher number of gray scales |
JP4095570B2 (ja) * | 2004-03-26 | 2008-06-04 | 株式会社東芝 | イオン注入装置およびイオン注入方法 |
US7053981B2 (en) * | 2004-03-31 | 2006-05-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7372547B2 (en) * | 2004-04-27 | 2008-05-13 | Lsi Corporation | Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography |
US6963434B1 (en) * | 2004-04-30 | 2005-11-08 | Asml Holding N.V. | System and method for calculating aerial image of a spatial light modulator |
US7123348B2 (en) | 2004-06-08 | 2006-10-17 | Asml Netherlands B.V | Lithographic apparatus and method utilizing dose control |
JP2006119601A (ja) * | 2004-09-24 | 2006-05-11 | Canon Inc | 光変調素子及びそれを利用した光学装置 |
US7177012B2 (en) * | 2004-10-18 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7457547B2 (en) * | 2004-11-08 | 2008-11-25 | Optium Australia Pty Limited | Optical calibration system and method |
US7643192B2 (en) * | 2004-11-24 | 2010-01-05 | Asml Holding N.V. | Pattern generator using a dual phase step element and method of using same |
US7202939B2 (en) * | 2004-12-22 | 2007-04-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20070104444A (ko) * | 2005-01-28 | 2007-10-25 | 에이에스엠엘 홀딩 엔.브이. | 전체적 최적화에 기초한 무마스크 리소그래피래스터라이제이션 기술을 위한 방법 및 시스템 |
JP2006300981A (ja) * | 2005-04-15 | 2006-11-02 | Seiko Epson Corp | 光走査装置、光走査装置の制御方法及び画像表示装置 |
US7466394B2 (en) * | 2005-12-21 | 2008-12-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method using a compensation scheme for a patterning array |
JPWO2007142350A1 (ja) * | 2006-06-09 | 2009-10-29 | 株式会社ニコン | パターン形成方法及びパターン形成装置、露光方法及び露光装置、並びにデバイス製造方法 |
US7936445B2 (en) * | 2006-06-19 | 2011-05-03 | Asml Netherlands B.V. | Altering pattern data based on measured optical element characteristics |
US7738077B2 (en) * | 2006-07-31 | 2010-06-15 | Asml Netherlands B.V. | Patterning device utilizing sets of stepped mirrors and method of using same |
JP5073273B2 (ja) * | 2006-11-21 | 2012-11-14 | スタンレー電気株式会社 | 遠近判定方法およびその装置 |
US7768627B2 (en) * | 2007-06-14 | 2010-08-03 | Asml Netherlands B.V. | Illumination of a patterning device based on interference for use in a maskless lithography system |
US8363209B2 (en) * | 2007-07-10 | 2013-01-29 | Lg Electronics Inc. | Method and apparatus to adjust misalignment of the maskless exposure apparatus |
US7958464B1 (en) * | 2007-09-07 | 2011-06-07 | Kla-Tencor Corporation | Electron beam patterning |
JP5309157B2 (ja) * | 2007-12-27 | 2013-10-09 | ラム リサーチ コーポレーション | プラズマ処理システムにおいてエンドエフェクタのアラインメントを校正するためのシステムおよび方法 |
JP5336513B2 (ja) * | 2007-12-27 | 2013-11-06 | ラム リサーチ コーポレーション | 動的アラインメント・ビーム校正のためのシステムおよび方法 |
SG195592A1 (en) * | 2007-12-27 | 2013-12-30 | Lam Res Corp | Arrangements and methods for determining positions and offsets in plasma processing system |
WO2009086164A2 (en) * | 2007-12-27 | 2009-07-09 | Lam Research Corporation | Systems and methods for calibrating end effector alignment using at least a light source |
DE102008000589B4 (de) * | 2008-03-11 | 2018-02-01 | Seereal Technologies S.A. | Verfahren zur Kodierung von computergenerierten Hologrammen in pixelierten Lichtmodulatoren |
US9025136B2 (en) * | 2008-09-23 | 2015-05-05 | Applied Materials, Inc. | System and method for manufacturing three dimensional integrated circuits |
EP2359192B1 (de) * | 2008-12-05 | 2013-02-13 | Micronic Mydata AB | Gradientgestützte Bildwiederauftastung für die Mikrolithographie |
US9507271B1 (en) * | 2008-12-17 | 2016-11-29 | Applied Materials, Inc. | System and method for manufacturing multiple light emitting diodes in parallel |
WO2010092188A1 (en) | 2009-02-16 | 2010-08-19 | Micronic Laser Systems Ab | Improved slm device and method |
WO2010100270A1 (en) * | 2009-03-06 | 2010-09-10 | Micronic Laser Systems Ab | Method and apparatus for statistical illumination |
US8743165B2 (en) * | 2010-03-05 | 2014-06-03 | Micronic Laser Systems Ab | Methods and device for laser processing |
WO2011107601A1 (en) * | 2010-03-05 | 2011-09-09 | Micronic Mydata AB | 1.5d slm for lithography |
US8539395B2 (en) | 2010-03-05 | 2013-09-17 | Micronic Laser Systems Ab | Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image |
DE102010063337B9 (de) * | 2010-12-17 | 2020-05-07 | Carl Zeiss Ag | Verfahren zur Maskeninspektion sowie Verfahren zur Emulation von Abbildungseigenschaften |
US8970827B2 (en) * | 2012-09-24 | 2015-03-03 | Alces Technology, Inc. | Structured light and time of flight depth capture with a MEMS ribbon linear array spatial light modulator |
JP6559706B2 (ja) | 2014-01-27 | 2019-08-14 | ビーコ インストルメンツ インコーポレイテッド | 化学蒸着システム用の複合半径を有する保持ポケットを有するウェハキャリア |
IN2014CH00782A (de) | 2014-02-19 | 2015-08-28 | Kennametal India Ltd | |
JP6524658B2 (ja) * | 2014-12-16 | 2019-06-05 | 株式会社リコー | 露光装置 |
KR101577561B1 (ko) * | 2015-02-24 | 2015-12-29 | 정용호 | 디스플레이 장치 |
US9627239B2 (en) * | 2015-05-29 | 2017-04-18 | Veeco Instruments Inc. | Wafer surface 3-D topography mapping based on in-situ tilt measurements in chemical vapor deposition systems |
US9831110B2 (en) | 2015-07-30 | 2017-11-28 | Lam Research Corporation | Vision-based wafer notch position measurement |
DE102016204703B4 (de) * | 2016-03-22 | 2022-08-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Erzeugung eines optischen Musters aus Bildpunkten in einer Bildebene |
EP3598236A4 (de) | 2017-03-16 | 2021-01-20 | Nikon Corporation | Steuerungsvorrichtung und steuerungsverfahren, belichtungsvorrichtung und belichtungsverfahren, vorrichtungsherstellungsverfahren, datenerzeugungsverfahren und programm |
US10761430B2 (en) * | 2018-09-13 | 2020-09-01 | Applied Materials, Inc. | Method to enhance the resolution of maskless lithography while maintaining a high image contrast |
DE102020207566B4 (de) | 2020-06-18 | 2023-02-16 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zur Charakterisierung einer Maske für die Mikrolithographie |
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-
2003
- 2003-06-12 US US10/462,010 patent/US7106490B2/en not_active Expired - Lifetime
- 2003-09-29 AU AU2003265190A patent/AU2003265190A1/en not_active Abandoned
- 2003-09-29 DE DE60335475T patent/DE60335475D1/de not_active Expired - Lifetime
- 2003-09-29 KR KR1020057005456A patent/KR101052653B1/ko active IP Right Grant
- 2003-09-29 WO PCT/SE2003/001509 patent/WO2004031831A1/en active Application Filing
- 2003-09-29 JP JP2005500105A patent/JP4376228B2/ja not_active Expired - Lifetime
- 2003-09-29 EP EP03799230A patent/EP1546788B1/de not_active Expired - Fee Related
-
2005
- 2005-11-14 US US11/272,925 patent/US7158280B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
AU2003265190A1 (en) | 2004-04-23 |
US20060077506A1 (en) | 2006-04-13 |
WO2004031831A1 (en) | 2004-04-15 |
EP1546788A1 (de) | 2005-06-29 |
JP2006501687A (ja) | 2006-01-12 |
JP4376228B2 (ja) | 2009-12-02 |
US20040053143A1 (en) | 2004-03-18 |
KR101052653B1 (ko) | 2011-07-28 |
KR20050070018A (ko) | 2005-07-05 |
EP1546788B1 (de) | 2010-12-22 |
US7158280B2 (en) | 2007-01-02 |
US7106490B2 (en) | 2006-09-12 |
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