DE68911478D1 - Abscheidung von Silizium enthaltenden Filmen unter Verwendung von Organosilizium-Verbindungen und Stickstofftrifluorid. - Google Patents

Abscheidung von Silizium enthaltenden Filmen unter Verwendung von Organosilizium-Verbindungen und Stickstofftrifluorid.

Info

Publication number
DE68911478D1
DE68911478D1 DE89119151T DE68911478T DE68911478D1 DE 68911478 D1 DE68911478 D1 DE 68911478D1 DE 89119151 T DE89119151 T DE 89119151T DE 68911478 T DE68911478 T DE 68911478T DE 68911478 D1 DE68911478 D1 DE 68911478D1
Authority
DE
Germany
Prior art keywords
deposition
silicon
organosilicon compounds
nitrogen trifluoride
containing films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89119151T
Other languages
English (en)
Other versions
DE68911478T2 (de
Inventor
Andrew P Lane
Gene R Frederick
Douglas A Webb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE68911478D1 publication Critical patent/DE68911478D1/de
Publication of DE68911478T2 publication Critical patent/DE68911478T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
DE68911478T 1988-10-26 1989-10-16 Abscheidung von Silizium enthaltenden Filmen unter Verwendung von Organosilizium-Verbindungen und Stickstofftrifluorid. Expired - Fee Related DE68911478T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/263,162 US4894352A (en) 1988-10-26 1988-10-26 Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride

Publications (2)

Publication Number Publication Date
DE68911478D1 true DE68911478D1 (de) 1994-01-27
DE68911478T2 DE68911478T2 (de) 1994-06-23

Family

ID=23000656

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68911478T Expired - Fee Related DE68911478T2 (de) 1988-10-26 1989-10-16 Abscheidung von Silizium enthaltenden Filmen unter Verwendung von Organosilizium-Verbindungen und Stickstofftrifluorid.

Country Status (4)

Country Link
US (1) US4894352A (de)
EP (1) EP0367004B1 (de)
JP (1) JP2848647B2 (de)
DE (1) DE68911478T2 (de)

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US4894352A (en) 1990-01-16
DE68911478T2 (de) 1994-06-23
EP0367004A1 (de) 1990-05-09
EP0367004B1 (de) 1993-12-15
JP2848647B2 (ja) 1999-01-20

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