DE68915088D1 - Hydrogenierte, amorphe Materialien und daraus bestehende dünne Filme. - Google Patents
Hydrogenierte, amorphe Materialien und daraus bestehende dünne Filme.Info
- Publication number
- DE68915088D1 DE68915088D1 DE68915088T DE68915088T DE68915088D1 DE 68915088 D1 DE68915088 D1 DE 68915088D1 DE 68915088 T DE68915088 T DE 68915088T DE 68915088 T DE68915088 T DE 68915088T DE 68915088 D1 DE68915088 D1 DE 68915088D1
- Authority
- DE
- Germany
- Prior art keywords
- hydrogenated
- thin films
- films made
- amorphous materials
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63228806A JPH0689453B2 (ja) | 1988-09-14 | 1988-09-14 | 薄膜形成装置 |
| JP1034987A JPH02217475A (ja) | 1989-02-16 | 1989-02-16 | 薄膜形成装置 |
| JP4326989 | 1989-02-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE68915088D1 true DE68915088D1 (de) | 1994-06-09 |
| DE68915088T2 DE68915088T2 (de) | 1994-08-18 |
Family
ID=27288603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE68915088T Expired - Lifetime DE68915088T2 (de) | 1988-09-14 | 1989-09-14 | Hydrogenierte, amorphe Materialien und daraus bestehende dünne Filme. |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US5122431A (de) |
| EP (1) | EP0359264B1 (de) |
| KR (1) | KR940003787B1 (de) |
| DE (1) | DE68915088T2 (de) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5582947A (en) * | 1981-01-16 | 1996-12-10 | Canon Kabushiki Kaisha | Glow discharge process for making photoconductive member |
| US5122431A (en) * | 1988-09-14 | 1992-06-16 | Fujitsu Limited | Thin film formation apparatus |
| MX9303141A (es) * | 1992-05-28 | 1994-04-29 | Polar Materials Inc | Metodos y aparatos para depositar recubrimientos de barrera. |
| JP3073327B2 (ja) * | 1992-06-30 | 2000-08-07 | キヤノン株式会社 | 堆積膜形成方法 |
| JPH0697070A (ja) * | 1992-09-11 | 1994-04-08 | Sanyo Electric Co Ltd | 多結晶シリコン膜の製造方法 |
| KR0168699B1 (ko) * | 1993-09-27 | 1999-02-01 | 사토 후미오 | 여기산소 또는 여기가스의 생성방법 및 공급방법 |
| FR2711035B1 (fr) * | 1993-10-04 | 1995-12-29 | Plasmion | Dispositif et procédé pour former un plasma par application de micro-ondes. |
| JP3175894B2 (ja) * | 1994-03-25 | 2001-06-11 | 株式会社半導体エネルギー研究所 | プラズマ処理装置及びプラズマ処理方法 |
| WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
| US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
| US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
| FR2731370B1 (fr) * | 1995-03-07 | 1997-06-06 | Cie Generale D Optique Essilor | Procede pour le depot assiste par plasma d'au moins une couche mince sur un substrat a deux faces, et reacteur correspondant |
| US5716485A (en) * | 1995-06-07 | 1998-02-10 | Varian Associates, Inc. | Electrode designs for controlling uniformity profiles in plasma processing reactors |
| US5980999A (en) * | 1995-08-24 | 1999-11-09 | Nagoya University | Method of manufacturing thin film and method for performing precise working by radical control and apparatus for carrying out such methods |
| JPH09148581A (ja) * | 1995-11-17 | 1997-06-06 | Sharp Corp | 薄膜半導体装置の製造方法 |
| KR100358131B1 (ko) * | 1995-12-29 | 2003-01-29 | 주식회사 하이닉스반도체 | 열산화막형성을위한방법및장치 |
| US5643365A (en) * | 1996-07-25 | 1997-07-01 | Ceram Optec Industries Inc | Method and device for plasma vapor chemical deposition of homogeneous films on large flat surfaces |
| US5855745A (en) * | 1997-04-23 | 1999-01-05 | Sierra Applied Sciences, Inc. | Plasma processing system utilizing combined anode/ ion source |
| US6095085A (en) * | 1998-08-20 | 2000-08-01 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
| JP3668079B2 (ja) * | 1999-05-31 | 2005-07-06 | 忠弘 大見 | プラズマプロセス装置 |
| JP2001135851A (ja) * | 1999-11-05 | 2001-05-18 | Minolta Co Ltd | 光電変換素子および固体撮像装置 |
| DE10047042C2 (de) * | 2000-09-22 | 2002-08-01 | Forschungszentrum Juelich Gmbh | Verfahren und Vorrichtung zur Herstellung von wasserstoffhaltigen Si¶1¶¶-¶¶x¶C¶x¶:H-Schichten |
| US6576564B2 (en) | 2000-12-07 | 2003-06-10 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
| US6930041B2 (en) * | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
| US7043133B2 (en) * | 2001-07-12 | 2006-05-09 | Little Optics, Inc. | Silicon-oxycarbide high index contrast, low-loss optical waveguides and integrated thermo-optic devices |
| US7659209B2 (en) * | 2001-11-14 | 2010-02-09 | Canon Anelva Corporation | Barrier metal film production method |
| TWI253478B (en) * | 2001-11-14 | 2006-04-21 | Mitsubishi Heavy Ind Ltd | Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
| JP4449293B2 (ja) * | 2001-12-19 | 2010-04-14 | 株式会社ニコン | 成膜装置、及び光学部材の製造方法 |
| NL1019781C2 (nl) * | 2002-01-18 | 2003-07-21 | Tno | Deklaag alsmede werkwijzen en inrichtingen voor de vervaardiging daarvan. |
| JP3872363B2 (ja) * | 2002-03-12 | 2007-01-24 | 京セラ株式会社 | Ｃａｔ−ＰＥＣＶＤ法 |
| EP1361437A1 (de) * | 2002-05-07 | 2003-11-12 | Centre National De La Recherche Scientifique (Cnrs) | Ein neuer biologischer Tumormarker und Methoden für die Detektion des krebsartigen oder nicht krebsartigen Phenotyps von Zellen |
| US20060237398A1 (en) * | 2002-05-08 | 2006-10-26 | Dougherty Mike L Sr | Plasma-assisted processing in a manufacturing line |
| US20060228497A1 (en) * | 2002-05-08 | 2006-10-12 | Satyendra Kumar | Plasma-assisted coating |
| US7638727B2 (en) * | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
| US7497922B2 (en) * | 2002-05-08 | 2009-03-03 | Btu International, Inc. | Plasma-assisted gas production |
| US20060062930A1 (en) * | 2002-05-08 | 2006-03-23 | Devendra Kumar | Plasma-assisted carburizing |
| US20060233682A1 (en) * | 2002-05-08 | 2006-10-19 | Cherian Kuruvilla A | Plasma-assisted engine exhaust treatment |
| US7465362B2 (en) * | 2002-05-08 | 2008-12-16 | Btu International, Inc. | Plasma-assisted nitrogen surface-treatment |
| US7445817B2 (en) * | 2002-05-08 | 2008-11-04 | Btu International Inc. | Plasma-assisted formation of carbon structures |
| US20050233091A1 (en) * | 2002-05-08 | 2005-10-20 | Devendra Kumar | Plasma-assisted coating |
| DE60223726T2 (de) * | 2002-05-08 | 2008-10-30 | Leonhard Kurz Stiftung & Co. Kg | Verfahren zum dekorieren eines grossen, dreidimensionalen plastikgegenstandes |
| US7560657B2 (en) * | 2002-05-08 | 2009-07-14 | Btu International Inc. | Plasma-assisted processing in a manufacturing line |
| BR0309814A (pt) | 2002-05-08 | 2005-03-01 | Dana Corp | Métodos de formação de plasma |
| US20060057016A1 (en) * | 2002-05-08 | 2006-03-16 | Devendra Kumar | Plasma-assisted sintering |
| US7498066B2 (en) * | 2002-05-08 | 2009-03-03 | Btu International Inc. | Plasma-assisted enhanced coating |
| US7494904B2 (en) * | 2002-05-08 | 2009-02-24 | Btu International, Inc. | Plasma-assisted doping |
| US20040129223A1 (en) * | 2002-12-24 | 2004-07-08 | Park Jong Hyurk | Apparatus and method for manufacturing silicon nanodot film for light emission |
| AU2003292678A1 (en) * | 2002-12-27 | 2004-07-29 | Adtec Plasma Technology Co., Ltd. | Plasma generator, ozone generator, substrate processing apparatus, and method for manufacturing semiconductor device |
| WO2006127037A2 (en) * | 2004-11-05 | 2006-11-30 | Dana Corporation | Atmospheric pressure processing using microwave-generated plasmas |
| FR2896807B1 (fr) * | 2006-01-30 | 2008-03-14 | Eads Ccr Groupement D Interet | Structure multicouche mince, piece la comprenant et son procede de depot |
| DE102008064134B4 (de) * | 2008-12-19 | 2016-07-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Beschichtung von Gegenständen mittels eines Niederdruckplasmas |
| JP5231308B2 (ja) * | 2009-03-31 | 2013-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10211310B2 (en) | 2012-06-12 | 2019-02-19 | Novellus Systems, Inc. | Remote plasma based deposition of SiOC class of films |
| US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
| US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
| US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
| US9337068B2 (en) | 2012-12-18 | 2016-05-10 | Lam Research Corporation | Oxygen-containing ceramic hard masks and associated wet-cleans |
| US10297442B2 (en) | 2013-05-31 | 2019-05-21 | Lam Research Corporation | Remote plasma based deposition of graded or multi-layered silicon carbide film |
| US9371579B2 (en) * | 2013-10-24 | 2016-06-21 | Lam Research Corporation | Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films |
| US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
| US11154903B2 (en) * | 2016-05-13 | 2021-10-26 | Jiangsu Favored Nanotechnology Co., Ltd. | Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization |
| US10002787B2 (en) | 2016-11-23 | 2018-06-19 | Lam Research Corporation | Staircase encapsulation in 3D NAND fabrication |
| US9837270B1 (en) | 2016-12-16 | 2017-12-05 | Lam Research Corporation | Densification of silicon carbide film using remote plasma treatment |
| US10840087B2 (en) | 2018-07-20 | 2020-11-17 | Lam Research Corporation | Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films |
| KR20220056248A (ko) | 2018-10-19 | 2022-05-04 | 램 리써치 코포레이션 | 갭 충진 (gapfill) 을 위한 도핑되거나 도핑되지 않은 실리콘 카바이드 증착 및 원격 수소 플라즈마 노출 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU86376A1 (ru) * | 1950-01-06 | 1950-11-30 | И.М. Сирота | Трансформатор тока нулевой последовательности |
| SU863716A1 (ru) * | 1979-08-08 | 1981-09-15 | Московский авиационный технологический институт им.К.Э.Циолковского | Устройство дл нанесени покрытий |
| CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
| JPH06105597B2 (ja) * | 1982-08-30 | 1994-12-21 | 株式会社日立製作所 | マイクロ波プラズマ源 |
| JPS59148326A (ja) * | 1983-02-14 | 1984-08-25 | Sumitomo Electric Ind Ltd | Ｃｖｄ薄膜製造方法 |
| JPS59159167A (ja) * | 1983-03-01 | 1984-09-08 | Zenko Hirose | アモルフアスシリコン膜の形成方法 |
| JPS6126774A (ja) * | 1984-07-16 | 1986-02-06 | Canon Inc | 非晶質シリコン膜形成装置 |
| US4717585A (en) * | 1985-02-09 | 1988-01-05 | Canon Kabushiki Kaisha | Process for forming deposited film |
| US4772486A (en) * | 1985-02-18 | 1988-09-20 | Canon Kabushiki Kaisha | Process for forming a deposited film |
| US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
| JPH07101751B2 (ja) * | 1985-03-28 | 1995-11-01 | キヤノン株式会社 | 光起電力素子の製造方法 |
| JPS61231716A (ja) * | 1985-04-08 | 1986-10-16 | Hitachi Ltd | 成膜装置 |
| US4777103A (en) * | 1985-10-30 | 1988-10-11 | Fujitsu Limited | Electrophotographic multi-layered photosensitive member having a top protective layer of hydrogenated amorphous silicon carbide and method for fabricating the same |
| JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
| JPH084072B2 (ja) * | 1986-01-14 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
| DE3784537T2 (de) * | 1986-04-11 | 1993-09-30 | Canon Kk | Herstellungsverfahren einer niedergeschlagenen Schicht. |
| JPS63152119A (ja) * | 1986-12-16 | 1988-06-24 | Fujitsu Ltd | 気相成長装置 |
| US5269848A (en) * | 1987-03-20 | 1993-12-14 | Canon Kabushiki Kaisha | Process for preparing a functional thin film by way of the chemical reaction among active species and apparatus therefor |
| US4913929A (en) * | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
| JP2552140B2 (ja) * | 1987-07-03 | 1996-11-06 | 新日本無線株式会社 | プラズマ発生反応装置 |
| JPS6424094A (en) * | 1987-07-21 | 1989-01-26 | Nat Inst Res Inorganic Mat | Synthesizing apparatus for diamond |
| JP2547032B2 (ja) * | 1987-07-29 | 1996-10-23 | 富士通株式会社 | 水素化非晶質Ｃ−Ｓｉ膜の形成方法 |
| JP2561129B2 (ja) * | 1988-06-07 | 1996-12-04 | 富士通株式会社 | 薄膜形成装置 |
| US5180436A (en) * | 1988-07-26 | 1993-01-19 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma film deposition system |
| US5122431A (en) * | 1988-09-14 | 1992-06-16 | Fujitsu Limited | Thin film formation apparatus |
| US5178905A (en) * | 1988-11-24 | 1993-01-12 | Canon Kabushiki Kaisha | Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state |
| EP0422243B1 (de) * | 1989-03-31 | 1994-09-21 | Canon Kabushiki Kaisha | Verfahren zur herstellung eines polykristallinen filmes mittels chemischen dampfniederschlags |
| JPH04326725A (ja) * | 1991-04-26 | 1992-11-16 | Tokyo Electron Ltd | プラズマ装置 |
-
1989
- 1989-09-11 US US07/405,297 patent/US5122431A/en not_active Expired - Lifetime
- 1989-09-11 KR KR1019890013162A patent/KR940003787B1/ko not_active IP Right Cessation
- 1989-09-14 EP EP89117041A patent/EP0359264B1/de not_active Expired - Lifetime
- 1989-09-14 DE DE68915088T patent/DE68915088T2/de not_active Expired - Lifetime
-
1991
- 1991-09-09 US US07/756,590 patent/US5447816A/en not_active Expired - Lifetime
-
1994
- 1994-02-23 US US08/201,486 patent/US5522343A/en not_active Expired - Lifetime
-
1995
- 1995-12-11 US US08/570,711 patent/US5741364A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE68915088T2 (de) | 1994-08-18 |
| EP0359264A2 (de) | 1990-03-21 |
| US5522343A (en) | 1996-06-04 |
| EP0359264A3 (en) | 1990-11-14 |
| US5741364A (en) | 1998-04-21 |
| US5122431A (en) | 1992-06-16 |
| EP0359264B1 (de) | 1994-05-04 |
| KR900005641A (ko) | 1990-04-14 |
| KR940003787B1 (ko) | 1994-05-03 |
| US5447816A (en) | 1995-09-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FUJI XEROX CO., LTD., TOKIO/TOKYO, JP |