DE68916083T2 - Halbleiteranordnung mit einer Metallisierungsschicht. - Google Patents

Halbleiteranordnung mit einer Metallisierungsschicht.

Info

Publication number
DE68916083T2
DE68916083T2 DE68916083T DE68916083T DE68916083T2 DE 68916083 T2 DE68916083 T2 DE 68916083T2 DE 68916083 T DE68916083 T DE 68916083T DE 68916083 T DE68916083 T DE 68916083T DE 68916083 T2 DE68916083 T2 DE 68916083T2
Authority
DE
Germany
Prior art keywords
metallization layer
semiconductor arrangement
semiconductor
arrangement
metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68916083T
Other languages
English (en)
Other versions
DE68916083D1 (de
Inventor
Shiro Kobayashi
Emiko Murofushi
Masahiko Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE68916083D1 publication Critical patent/DE68916083D1/de
Application granted granted Critical
Publication of DE68916083T2 publication Critical patent/DE68916083T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
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    • H01L2924/151—Die mounting substrate
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    • H01L2924/181—Encapsulation
DE68916083T 1988-03-30 1989-03-30 Halbleiteranordnung mit einer Metallisierungsschicht. Expired - Fee Related DE68916083T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63074658A JP2511289B2 (ja) 1988-03-30 1988-03-30 半導体装置

Publications (2)

Publication Number Publication Date
DE68916083D1 DE68916083D1 (de) 1994-07-21
DE68916083T2 true DE68916083T2 (de) 1995-01-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE68916083T Expired - Fee Related DE68916083T2 (de) 1988-03-30 1989-03-30 Halbleiteranordnung mit einer Metallisierungsschicht.

Country Status (5)

Country Link
US (1) US5023698A (de)
EP (1) EP0335383B1 (de)
JP (1) JP2511289B2 (de)
KR (1) KR930010064B1 (de)
DE (1) DE68916083T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714606B2 (ja) * 1988-05-16 1998-02-16 日本電信電話株式会社 配線層及びその製法
US5801444A (en) * 1989-09-29 1998-09-01 International Business Machines Corporation Multilevel electronic structures containing copper layer and copper-semiconductor layers
JPH03233972A (ja) * 1990-02-08 1991-10-17 Matsushita Electron Corp 半導体装置用電極およびその製造方法
US5243222A (en) * 1991-04-05 1993-09-07 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
US5130274A (en) * 1991-04-05 1992-07-14 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
JP2534434B2 (ja) * 1992-04-30 1996-09-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 耐酸化性化合物およびその製造方法
EP0601509A1 (de) * 1992-12-07 1994-06-15 Nikko Kyodo Co., Ltd. Halbleiteranordnungen und Herstellungsverfahren
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper
US5622608A (en) * 1994-05-05 1997-04-22 Research Foundation Of State University Of New York Process of making oxidation resistant high conductivity copper layers
DE69637333T2 (de) * 1995-06-27 2008-10-02 International Business Machines Corp. Kupferlegierungen für Chipverbindungen und Herstellungsverfahren
WO1997011485A1 (fr) * 1995-09-18 1997-03-27 Hitachi, Ltd. Dispositif a semiconducteur et son procede de fabrication
WO1997030480A1 (en) * 1996-02-16 1997-08-21 Alliedsignal Inc. Low resistivity thin film conductor for high temperature integrated circuit electronics
EP1112125B1 (de) * 1998-06-30 2006-01-25 Semitool, Inc. Metallisierungsstrukturen für mikroelektronische anwendungen und verfahren zur herstellung dieser strukturen
JP2000349085A (ja) 1999-06-01 2000-12-15 Nec Corp 半導体装置及び半導体装置の製造方法
US6113761A (en) 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
US6432819B1 (en) * 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films
JP3456454B2 (ja) * 1999-09-30 2003-10-14 株式会社村田製作所 ワイヤを有する電子部品
US6469386B1 (en) * 1999-10-01 2002-10-22 Samsung Aerospace Industries, Ltd. Lead frame and method for plating the same
US6440849B1 (en) * 1999-10-18 2002-08-27 Agere Systems Guardian Corp. Microstructure control of copper interconnects
EP1232525A2 (de) 1999-11-24 2002-08-21 Honeywell International, Inc. Leitende verbindung
JP3542311B2 (ja) * 2000-01-28 2004-07-14 株式会社ルネサステクノロジ 半導体装置
US20020064931A1 (en) * 2000-07-03 2002-05-30 E. C. Ong Method and apparatus for applying a protective over-coating to a ball-grid-array (BGA) structure
US20030118798A1 (en) 2001-12-25 2003-06-26 Nec Electronics Corporation Copper interconnection and the method for fabricating the same
WO2003064722A1 (fr) * 2002-01-30 2003-08-07 Nikko Materials Company, Limited Cible de pulverisation d'alliage de cuivre et procede de fabrication de cette cible
JP4794802B2 (ja) 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
EP1602747B1 (de) * 2003-03-17 2011-03-30 Nippon Mining & Metals Co., Ltd. Verfahren zur herstellung eines kupferlegierungssputtertargets
EP1656467A2 (de) * 2003-08-21 2006-05-17 Honeywell International Inc. Kupferhaltige pvd-targets und herstellungsverfahren dafür
US7189292B2 (en) 2003-10-31 2007-03-13 International Business Machines Corporation Self-encapsulated silver alloys for interconnects
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US20090186230A1 (en) * 2007-10-24 2009-07-23 H.C. Starck Inc. Refractory metal-doped sputtering targets, thin films prepared therewith and electronic device elements containing such films
JP5207120B2 (ja) * 2008-02-05 2013-06-12 三菱マテリアル株式会社 熱欠陥発生がなくかつ密着力に優れた液晶表示装置用配線および電極
US8560990B2 (en) 2010-01-13 2013-10-15 International Business Machines Corporation Method of managing electro migration in logic designs and design structure thereof
JP2012060015A (ja) * 2010-09-10 2012-03-22 Hitachi Cable Ltd 電子デバイス配線用Ｃｕ合金スパッタリングターゲット材、及び素子構造
US9865673B2 (en) * 2015-03-24 2018-01-09 International Business Machines Corporation High resistivity soft magnetic material for miniaturized power converter

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5841782B2 (ja) * 1978-11-20 1983-09-14 玉川機械金属株式会社 Ｉｃ用リ−ド材
JPS5943570A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 薄膜配線
JPS60221541A (ja) * 1984-04-07 1985-11-06 Kobe Steel Ltd 熱間加工性の優れた銅合金
JPS6160846A (ja) * 1984-08-31 1986-03-28 Tamagawa Kikai Kinzoku Kk 半導体装置用銅合金リ−ド材
US4805009A (en) * 1985-03-11 1989-02-14 Olin Corporation Hermetically sealed semiconductor package
DE3587085T2 (de) * 1984-09-19 1993-09-16 Olin Corp Hermetisch verschlossenes halbleitergehaeuse.
US4704626A (en) * 1985-07-08 1987-11-03 Olin Corporation Graded sealing systems for semiconductor package
JPS6213058A (ja) * 1985-07-10 1987-01-21 Nippon Telegr & Teleph Corp <Ntt> ばね材料
JPS6254048A (ja) * 1985-09-02 1987-03-09 Hitachi Metals Ltd リ−ドフレ−ム用銅合金
EP0260906B1 (de) * 1986-09-17 1993-03-10 Fujitsu Limited Verfahren zum Herstellen einer Halbleitervorrichtung und Halbleitervorrichtung
JPS63240047A (ja) * 1987-03-27 1988-10-05 Fujitsu Ltd 半導体装置における配線形成方法
JPH01124238A (ja) * 1987-11-09 1989-05-17 Fujitsu Ltd 半導体集積回路用配線およびその形成方法

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DE68916083D1 (de) 1994-07-21
EP0335383A2 (de) 1989-10-04
US5023698A (en) 1991-06-11
KR930010064B1 (ko) 1993-10-14
EP0335383B1 (de) 1994-06-15
JP2511289B2 (ja) 1996-06-26
KR890015365A (ko) 1989-10-30
JPH01248538A (ja) 1989-10-04
EP0335383A3 (en) 1990-05-30

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