DE68920765T2 - Zusammenbau von elektrooptischen Halbleiter-Bauelementen. - Google Patents

Zusammenbau von elektrooptischen Halbleiter-Bauelementen.

Info

Publication number
DE68920765T2
DE68920765T2 DE68920765T DE68920765T DE68920765T2 DE 68920765 T2 DE68920765 T2 DE 68920765T2 DE 68920765 T DE68920765 T DE 68920765T DE 68920765 T DE68920765 T DE 68920765T DE 68920765 T2 DE68920765 T2 DE 68920765T2
Authority
DE
Germany
Prior art keywords
assembly
grating
cavity
electro
stacks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68920765T
Other languages
English (en)
Other versions
DE68920765D1 (de
Inventor
Keith Henderson Cameron
Richard Wyatt
John Mellis
Salah Ahmad Al-Chalabi
Michael Charles Brain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPG Photonics Corp
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Application granted granted Critical
Publication of DE68920765D1 publication Critical patent/DE68920765D1/de
Publication of DE68920765T2 publication Critical patent/DE68920765T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
DE68920765T 1988-03-29 1989-03-29 Zusammenbau von elektrooptischen Halbleiter-Bauelementen. Expired - Lifetime DE68920765T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB888807385A GB8807385D0 (en) 1988-03-29 1988-03-29 Semiconductor device assembly

Publications (2)

Publication Number Publication Date
DE68920765D1 DE68920765D1 (de) 1995-03-09
DE68920765T2 true DE68920765T2 (de) 1995-05-18

Family

ID=10634261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920765T Expired - Lifetime DE68920765T2 (de) 1988-03-29 1989-03-29 Zusammenbau von elektrooptischen Halbleiter-Bauelementen.

Country Status (10)

Country Link
US (1) US5058124A (de)
EP (1) EP0335691B1 (de)
JP (1) JP2944692B2 (de)
AT (1) ATE117846T1 (de)
AU (1) AU608975B2 (de)
CA (1) CA1313909C (de)
DE (1) DE68920765T2 (de)
ES (1) ES2067533T3 (de)
GB (1) GB8807385D0 (de)
WO (1) WO1989009503A1 (de)

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Also Published As

Publication number Publication date
US5058124A (en) 1991-10-15
WO1989009503A1 (en) 1989-10-05
CA1313909C (en) 1993-02-23
ATE117846T1 (de) 1995-02-15
AU608975B2 (en) 1991-04-18
JP2944692B2 (ja) 1999-09-06
EP0335691A1 (de) 1989-10-04
DE68920765D1 (de) 1995-03-09
EP0335691B1 (de) 1995-01-25
GB8807385D0 (en) 1988-05-05
ES2067533T3 (es) 1995-04-01
JPH03500353A (ja) 1991-01-24
AU3425289A (en) 1989-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: IPG PHOTONICS CORP., OXFORD, MASS., US