DE68923589T2 - Infrarot-Detektor. - Google Patents
Infrarot-Detektor.Info
- Publication number
- DE68923589T2 DE68923589T2 DE68923589T DE68923589T DE68923589T2 DE 68923589 T2 DE68923589 T2 DE 68923589T2 DE 68923589 T DE68923589 T DE 68923589T DE 68923589 T DE68923589 T DE 68923589T DE 68923589 T2 DE68923589 T2 DE 68923589T2
- Authority
- DE
- Germany
- Prior art keywords
- infrared detector
- infrared
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B13/00—Burglar, theft or intruder alarms
- G08B13/18—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength
- G08B13/189—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems
- G08B13/19—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
- H01L27/1467—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23179788A | 1988-08-12 | 1988-08-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68923589D1 DE68923589D1 (de) | 1995-08-31 |
DE68923589T2 true DE68923589T2 (de) | 1996-01-18 |
Family
ID=22870680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68923589T Expired - Lifetime DE68923589T2 (de) | 1988-08-12 | 1989-07-12 | Infrarot-Detektor. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0354369B1 (de) |
JP (1) | JP2834202B2 (de) |
KR (1) | KR0135119B1 (de) |
DE (1) | DE68923589T2 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006003718A1 (de) * | 2006-01-26 | 2007-08-09 | Atmel Germany Gmbh | Fertigungsprozess für integrierte mikroelektro-mechanische Bauelemente |
DE10058864B4 (de) * | 2000-11-27 | 2009-06-25 | Pyreos Ltd. | Mikromechanikstruktur für integrierte Sensoranordnungen und Verfahren zur Herstellung einer Mikromechanikstruktur |
US8080797B2 (en) | 2006-09-08 | 2011-12-20 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Bolometer and method of producing a bolometer |
DE102008041587B4 (de) * | 2008-08-27 | 2017-07-20 | Robert Bosch Gmbh | Mikrostrukturiertes Temperatursensorelement mit zusätzlicher IR-absorbierender Schicht |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2236016A (en) * | 1989-09-13 | 1991-03-20 | Philips Electronic Associated | Pyroelectric and other infrared detection devices with thin films |
DE69221054T2 (de) * | 1991-09-27 | 1998-01-22 | Texas Instruments Inc | Lese-System und Verfahren für Infrarotdetektoranordnungen |
US5288649A (en) * | 1991-09-30 | 1994-02-22 | Texas Instruments Incorporated | Method for forming uncooled infrared detector |
EP0611443B1 (de) * | 1991-11-04 | 1996-05-29 | Honeywell Inc. | Dunnfilmpyroelektrische bildmatrix |
JP3062627B2 (ja) * | 1992-07-08 | 2000-07-12 | ハネウエル・インコーポレーテッド | 高赤外感度を有する超小型構造体 |
US5426412A (en) * | 1992-10-27 | 1995-06-20 | Matsushita Electric Works, Ltd. | Infrared detecting device and infrared detecting element for use in the device |
IL104669A0 (en) * | 1993-02-09 | 1993-08-18 | Technion Res & Dev Foundation | Bolometer array |
JP2710228B2 (ja) * | 1994-08-11 | 1998-02-10 | 日本電気株式会社 | ボロメータ型赤外線検知素子、その駆動方法、および検出用積分回路 |
JP2674545B2 (ja) * | 1995-01-20 | 1997-11-12 | 日本電気株式会社 | 赤外線検出器及びその駆動方法 |
JP3563803B2 (ja) * | 1995-02-14 | 2004-09-08 | 松下電器産業株式会社 | 空調装置およびその制御方法 |
JP3344163B2 (ja) * | 1995-06-06 | 2002-11-11 | 三菱電機株式会社 | 赤外線撮像素子 |
FR2735574B1 (fr) * | 1995-06-15 | 1997-07-18 | Commissariat Energie Atomique | Dispositif de detection bolometrique pour ondes millimetriques et submillimetriques et procede de fabrication de ce dispositif |
US6064066A (en) * | 1995-07-21 | 2000-05-16 | Texas Insruments Incorporated | Bolometer autocalibration |
EP0773435A3 (de) * | 1995-07-21 | 1998-03-11 | Texas Instruments Incorporated | Verfahren und Vorrichtungen zur Strahlungsmessung |
US5789753A (en) * | 1995-07-21 | 1998-08-04 | Texas Instruments Incorporated | Stress tolerant bolometer |
US6392232B1 (en) | 1995-07-21 | 2002-05-21 | Pharmarcopeia, Inc. | High fill factor bolometer array |
US5841137A (en) * | 1995-08-11 | 1998-11-24 | Texas Instruments Incorporated | Duplicative detector sensor |
US5914488A (en) * | 1996-03-05 | 1999-06-22 | Mitsubishi Denki Kabushiki Kaisha | Infrared detector |
US5831266A (en) * | 1996-09-12 | 1998-11-03 | Institut National D'optique | Microbridge structure for emitting or detecting radiations and method for forming such microbridge structure |
US5962909A (en) * | 1996-09-12 | 1999-10-05 | Institut National D'optique | Microstructure suspended by a microsupport |
FI107407B (fi) * | 1997-09-16 | 2001-07-31 | Metorex Internat Oy | Alimillimetriaalloilla toimiva kuvausjärjestelmä |
FR2773215B1 (fr) * | 1997-12-31 | 2000-01-28 | Commissariat Energie Atomique | Detecteur thermique bolometrique |
FR2780784B1 (fr) * | 1998-07-06 | 2000-08-11 | Commissariat Energie Atomique | Detecteur thermique a amplification par effet bolometrique |
FR2781927B1 (fr) * | 1998-07-28 | 2001-10-05 | Commissariat Energie Atomique | Dispositif de detection de rayonnements multispectraux infrarouge/visible |
WO2000012986A1 (en) * | 1998-08-31 | 2000-03-09 | Daewoo Electronics Co., Ltd. | Bolometer including a reflective layer |
FR2788885B1 (fr) * | 1999-01-21 | 2003-07-18 | Commissariat Energie Atomique | Dispositif de detection thermique de rayonnements electromagnetiques et procede de fabrication de celui-ci |
JP3460810B2 (ja) | 1999-07-26 | 2003-10-27 | 日本電気株式会社 | 熱分離構造を有する熱型赤外線検出器 |
FR2802338B1 (fr) * | 1999-12-10 | 2002-01-18 | Commissariat Energie Atomique | Dispositif de detection de rayonnement electromagnetique |
DE19961180C2 (de) * | 1999-12-18 | 2002-02-28 | Daimler Chrysler Ag | Dünnschichtwiderstand mit hohem Temperaturkoeffizienten als passives Halbleiterbauelement für integrierte Schaltungen und Herstellungsverfahren |
DE10321640B4 (de) * | 2003-05-13 | 2016-12-22 | Heimann Sensor Gmbh | Infrarotsensor mit verbesserter Strahlungsausbeute |
DE10321639A1 (de) * | 2003-05-13 | 2004-12-02 | Heimann Sensor Gmbh | Infrarotsensor mit optimierter Flächennutzung |
US7460246B2 (en) * | 2004-09-27 | 2008-12-02 | Idc, Llc | Method and system for sensing light using interferometric elements |
NL1028253C2 (nl) * | 2005-02-11 | 2006-08-14 | Uteke Maria Klaassens | Sensormicrochip met contactring, beeldopname sensor, beeldopname camera. |
AR060423A1 (es) * | 2007-04-11 | 2008-06-18 | Consejo Nac Invest Cient Tec | Sensor bolometrico de alta sensibilidad |
JP2010127892A (ja) * | 2008-12-01 | 2010-06-10 | Seiko Instruments Inc | 赤外線センサ |
KR101250745B1 (ko) * | 2010-11-19 | 2013-04-04 | 박춘덕 | 광합성 유효 광량 측정기 |
KR101180647B1 (ko) * | 2011-01-10 | 2012-09-19 | 한국과학기술원 | 마이크로 볼로미터에서 필 팩터를 높이기 위한 픽셀 디자인 |
CN102564599B (zh) * | 2011-12-23 | 2013-04-10 | 电子科技大学 | 红外焦平面阵列中读出电路及其参比电阻以及制造方法 |
JP2013143416A (ja) * | 2012-01-10 | 2013-07-22 | Seiko Epson Corp | 熱型電磁波検出器および電子機器 |
US9698281B2 (en) * | 2012-08-22 | 2017-07-04 | Robert Bosch Gmbh | CMOS bolometer |
GB2521476A (en) | 2013-12-22 | 2015-06-24 | Melexis Technologies Nv | Infrared thermal sensor with good SNR |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3846820A (en) * | 1973-06-26 | 1974-11-05 | Westinghouse Electric Corp | Mosaic for ir imaging using pyroelectric sensors in a bipolar transistor array |
JPS6034060B2 (ja) * | 1975-07-04 | 1985-08-06 | 株式会社横河電機製作所 | 光検出装置 |
US4142207A (en) * | 1977-12-20 | 1979-02-27 | Texas Instruments Incorporated | Ferroelectric imaging system |
US4754139A (en) * | 1986-04-10 | 1988-06-28 | Aerojet-General Corporation | Uncooled high resolution infrared imaging plane |
JPS6378581A (ja) * | 1986-09-20 | 1988-04-08 | Fujitsu Ltd | 半導体装置 |
GB2198879A (en) * | 1986-12-05 | 1988-06-22 | Philips Electronic Associated | Thermal radiation detector |
-
1989
- 1989-07-12 DE DE68923589T patent/DE68923589T2/de not_active Expired - Lifetime
- 1989-07-12 EP EP89112731A patent/EP0354369B1/de not_active Expired - Lifetime
- 1989-08-11 KR KR1019890011449A patent/KR0135119B1/ko not_active IP Right Cessation
- 1989-08-11 JP JP1209496A patent/JP2834202B2/ja not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10058864B4 (de) * | 2000-11-27 | 2009-06-25 | Pyreos Ltd. | Mikromechanikstruktur für integrierte Sensoranordnungen und Verfahren zur Herstellung einer Mikromechanikstruktur |
DE102006003718A1 (de) * | 2006-01-26 | 2007-08-09 | Atmel Germany Gmbh | Fertigungsprozess für integrierte mikroelektro-mechanische Bauelemente |
DE102006003718B4 (de) * | 2006-01-26 | 2008-07-17 | Atmel Germany Gmbh | Mikro-elektro-mechanisches Bauelement und Fertigungsprozess für integrierte mikro-elektro-mechanische Bauelemente |
US8080797B2 (en) | 2006-09-08 | 2011-12-20 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Bolometer and method of producing a bolometer |
DE112006004013B4 (de) * | 2006-09-08 | 2014-07-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bolometer und Verfahren zum Herstellen eines Bolometers |
DE102008041587B4 (de) * | 2008-08-27 | 2017-07-20 | Robert Bosch Gmbh | Mikrostrukturiertes Temperatursensorelement mit zusätzlicher IR-absorbierender Schicht |
Also Published As
Publication number | Publication date |
---|---|
JPH02196929A (ja) | 1990-08-03 |
EP0354369B1 (de) | 1995-07-26 |
KR0135119B1 (ko) | 1998-04-20 |
JP2834202B2 (ja) | 1998-12-09 |
KR900003617A (ko) | 1990-03-26 |
EP0354369A2 (de) | 1990-02-14 |
DE68923589D1 (de) | 1995-08-31 |
EP0354369A3 (en) | 1990-11-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: RAYTHEON CO. (N.D.GES.D. STAATES DELAWARE), LEXING |