DE68928319T2 - Durch elektrisches Feld lichtemittierende Vorrichtung. - Google Patents

Durch elektrisches Feld lichtemittierende Vorrichtung.

Info

Publication number
DE68928319T2
DE68928319T2 DE68928319T DE68928319T DE68928319T2 DE 68928319 T2 DE68928319 T2 DE 68928319T2 DE 68928319 T DE68928319 T DE 68928319T DE 68928319 T DE68928319 T DE 68928319T DE 68928319 T2 DE68928319 T2 DE 68928319T2
Authority
DE
Germany
Prior art keywords
electric field
emitting light
device emitting
light emitting
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928319T
Other languages
English (en)
Other versions
DE68928319D1 (de
Inventor
Yasushi Taniguchi
Keiji Hirabayashi
Noriko Kurihara
Keiko Ikoma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63327886A external-priority patent/JPH02173618A/ja
Priority claimed from JP63327884A external-priority patent/JP2614096B2/ja
Priority claimed from JP63327885A external-priority patent/JP2614097B2/ja
Priority claimed from JP63327887A external-priority patent/JP2614098B2/ja
Priority claimed from JP1305375A external-priority patent/JPH03165580A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE68928319D1 publication Critical patent/DE68928319D1/de
Publication of DE68928319T2 publication Critical patent/DE68928319T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/65—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing carbon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/18—Light sources with substantially two-dimensional radiating surfaces characterised by the nature or concentration of the activator
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
DE68928319T 1988-12-27 1989-12-27 Durch elektrisches Feld lichtemittierende Vorrichtung. Expired - Fee Related DE68928319T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP63327886A JPH02173618A (ja) 1988-12-27 1988-12-27 電界発光素子
JP63327884A JP2614096B2 (ja) 1988-12-27 1988-12-27 電界発光素子
JP63327885A JP2614097B2 (ja) 1988-12-27 1988-12-27 電界発光素子
JP63327887A JP2614098B2 (ja) 1988-12-27 1988-12-27 電界発光素子
JP1305375A JPH03165580A (ja) 1989-11-25 1989-11-25 電界注入型発光素子

Publications (2)

Publication Number Publication Date
DE68928319D1 DE68928319D1 (de) 1997-10-16
DE68928319T2 true DE68928319T2 (de) 1998-01-15

Family

ID=27530980

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68928319T Expired - Fee Related DE68928319T2 (de) 1988-12-27 1989-12-27 Durch elektrisches Feld lichtemittierende Vorrichtung.
DE68928245T Expired - Fee Related DE68928245T2 (de) 1988-12-27 1989-12-27 Durch elektrisches Feld lichtemittierende Vorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE68928245T Expired - Fee Related DE68928245T2 (de) 1988-12-27 1989-12-27 Durch elektrisches Feld lichtemittierende Vorrichtung

Country Status (4)

Country Link
US (2) US5210430A (de)
EP (2) EP0377320B1 (de)
AT (2) ATE156648T1 (de)
DE (2) DE68928319T2 (de)

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US5718976A (en) * 1991-05-03 1998-02-17 Advanced Refractory Technologies, Inc. Erosion resistant diamond-like nanocomposite coatings for optical components
US5728465A (en) * 1991-05-03 1998-03-17 Advanced Refractory Technologies, Inc. Diamond-like nanocomposite corrosion resistant coatings
US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5600200A (en) 1992-03-16 1997-02-04 Microelectronics And Computer Technology Corporation Wire-mesh cathode
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US6127773A (en) 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5679043A (en) 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US5763997A (en) 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5389799A (en) * 1992-06-12 1995-02-14 Kabushiki Kaisha Toshiba Semiconductor device
US5334855A (en) * 1992-08-24 1994-08-02 Motorola, Inc. Diamond/phosphor polycrystalline led and display
AU1043895A (en) 1993-11-04 1995-05-23 Microelectronics And Computer Technology Corporation Methods for fabricating flat panel display systems and components
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
US6204834B1 (en) 1994-08-17 2001-03-20 Si Diamond Technology, Inc. System and method for achieving uniform screen brightness within a matrix display
CA2157257C (en) * 1994-09-12 1999-08-10 Kazuhiko Endo Semiconductor device with amorphous carbon layer and method of fabricating the same
US5531880A (en) * 1994-09-13 1996-07-02 Microelectronics And Computer Technology Corporation Method for producing thin, uniform powder phosphor for display screens
US5552678A (en) * 1994-09-23 1996-09-03 Eastman Kodak Company AC drive scheme for organic led
US5569487A (en) * 1995-01-23 1996-10-29 General Electric Company Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5628659A (en) * 1995-04-24 1997-05-13 Microelectronics And Computer Corporation Method of making a field emission electron source with random micro-tip structures
NO304124B1 (no) * 1995-09-08 1998-10-26 Patinor As Infrar°d strÕlingskilde og fremgangsmÕte til dens fremstilling
US5795648A (en) * 1995-10-03 1998-08-18 Advanced Refractory Technologies, Inc. Method for preserving precision edges using diamond-like nanocomposite film coatings
US6468642B1 (en) 1995-10-03 2002-10-22 N.V. Bekaert S.A. Fluorine-doped diamond-like coatings
US5638251A (en) * 1995-10-03 1997-06-10 Advanced Refractory Technologies, Inc. Capacitive thin films using diamond-like nanocomposite materials
US6504311B1 (en) * 1996-03-25 2003-01-07 Si Diamond Technology, Inc. Cold-cathode cathodoluminescent lamp
US5729094A (en) * 1996-04-15 1998-03-17 Massachusetts Institute Of Technology Energetic-electron emitters
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
US6013980A (en) * 1997-05-09 2000-01-11 Advanced Refractory Technologies, Inc. Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatings
US6176864B1 (en) * 1998-03-09 2001-01-23 Corvascular, Inc. Anastomosis device and method
US6479939B1 (en) * 1998-10-16 2002-11-12 Si Diamond Technology, Inc. Emitter material having a plurlarity of grains with interfaces in between
US6548836B1 (en) * 1999-04-29 2003-04-15 Massachusetts Institute Of Technology Solid state light-emitting device
EP1065734B1 (de) 1999-06-09 2009-05-13 Kabushiki Kaisha Toshiba Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
US6872981B1 (en) 1999-07-07 2005-03-29 Tokyo Gas Co., Ltd. Diamond ultraviolet luminescent element
US7009219B1 (en) 1999-07-09 2006-03-07 Tokyo Gas Co., Ltd. Diamond ultraviolet light-emitting device
WO2001011661A2 (en) * 1999-08-10 2001-02-15 Emc Technology, Inc. Passive electrical components formed on carbon coated insulating substrates
US6641933B1 (en) 1999-09-24 2003-11-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting EL display device
US6630793B2 (en) 2000-08-16 2003-10-07 Massachusetts Institute Of Technology High efficiency solid state light-emitting device and method of generating light
JP3880356B2 (ja) * 2000-12-05 2007-02-14 キヤノン株式会社 表示装置
DE10103294C1 (de) * 2001-01-25 2002-10-31 Siemens Ag Träger mit einer Metallfläche und mindestens ein darauf angeordneter Chip, insbesondere Leistungshalbleiter
US7358658B2 (en) * 2002-03-08 2008-04-15 Chien-Min Sung Amorphous diamond materials and associated methods for the use and manufacture thereof
US6955745B1 (en) * 2002-08-01 2005-10-18 University Of Florida Research Foundation, Inc. Method of spark-processing silicon and resulting materials
GB0220767D0 (en) * 2002-09-06 2002-10-16 Diamanx Products Ltd Diamond radiation detector
US7224532B2 (en) * 2002-12-06 2007-05-29 Chevron U.S.A. Inc. Optical uses diamondoid-containing materials
EP1447854A3 (de) * 2003-02-13 2009-09-16 FUJIFILM Corporation Mit Wechselstrom betriebene LED
US20050019955A1 (en) * 2003-07-23 2005-01-27 Dahl Jeremy E. Luminescent heterodiamondoids as biological labels
US7869570B2 (en) * 2004-12-09 2011-01-11 Larry Canada Electromagnetic apparatus and methods employing coulomb force oscillators
US8698322B2 (en) * 2010-03-24 2014-04-15 Oracle International Corporation Adhesive-bonded substrates in a multi-chip module
US10811257B2 (en) * 2018-03-27 2020-10-20 Varian Semiconductor Equipment Associates, Inc. Techniques for forming low stress etch-resistant mask using implantation

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GB1481047A (en) * 1973-07-05 1977-07-27 Sharp Kk Electroluminescent element
US4164680A (en) * 1975-08-27 1979-08-14 Villalobos Humberto F Polycrystalline diamond emitter
JPS5851100A (ja) * 1981-09-18 1983-03-25 株式会社ニレコ 切断制御装置におけるゲ−ト設定方法
US4504519A (en) * 1981-10-21 1985-03-12 Rca Corporation Diamond-like film and process for producing same
JPS5927754B2 (ja) * 1981-12-17 1984-07-07 科学技術庁無機材質研究所長 ダイヤモンドの合成法
US4547703A (en) * 1982-05-28 1985-10-15 Matsushita Electric Industrial Co., Ltd. Thin film electroluminescent element
US4537703A (en) * 1983-12-19 1985-08-27 E. I. Du Pont De Nemours And Company Borosilicate glass compositions
JPS612632A (ja) * 1984-06-14 1986-01-08 Fuji Xerox Co Ltd 複写機における紙さばき機構
JPS6227039A (ja) * 1985-07-26 1987-02-05 Ube Ind Ltd 三塩化ホウ素吸着装置
US4744862A (en) * 1984-10-01 1988-05-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods for nonlinear semiconductor element and liquid crystal display panel using the same
US4754140A (en) * 1985-03-21 1988-06-28 Nam Tom L Diamond as a thermoluminescent material
US4920387A (en) * 1985-08-26 1990-04-24 Canon Kabushiki Kaisha Light emitting device
US4914490A (en) * 1985-08-28 1990-04-03 Canon Kabushiki Kaisha Non-single crystal electroluminescent device
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EP0226058A3 (de) * 1985-11-21 1989-02-22 Sharp Kabushiki Kaisha Dünnschichtige elektrolumineszierende Vorrichtung
JPH0697704B2 (ja) * 1986-01-27 1994-11-30 シャープ株式会社 ＭＩＳ型ＺｎＳ青色発光素子
JPS62218476A (ja) * 1986-03-18 1987-09-25 Murata Mfg Co Ltd 薄膜ｅｌ素子
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JPS63192085A (ja) * 1987-02-04 1988-08-09 シャープ株式会社 発光報知板
JPS63210275A (ja) * 1987-02-24 1988-08-31 Semiconductor Energy Lab Co Ltd プラズマ反応装置内を清浄にする方法
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US4816291A (en) * 1987-08-19 1989-03-28 The Regents Of The University Of California Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
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JPH01102893A (ja) * 1987-10-15 1989-04-20 Akio Hiraki 発光デバイス
US4925701A (en) * 1988-05-27 1990-05-15 Xerox Corporation Processes for the preparation of polycrystalline diamond films
JP2708183B2 (ja) * 1988-07-21 1998-02-04 シャープ株式会社 化合物半導体発光素子
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Also Published As

Publication number Publication date
EP0377320B1 (de) 1997-07-30
EP0588449B1 (de) 1997-08-06
ATE156648T1 (de) 1997-08-15
EP0377320A3 (de) 1990-11-14
US5275967A (en) 1994-01-04
US5210430A (en) 1993-05-11
EP0588449A2 (de) 1994-03-23
DE68928245D1 (de) 1997-09-11
ATE156324T1 (de) 1997-08-15
EP0588449A3 (en) 1994-05-25
EP0377320A2 (de) 1990-07-11
DE68928245T2 (de) 1997-12-11
DE68928319D1 (de) 1997-10-16

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Legal Events

Date Code Title Description
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee