DE68928944T2 - Auf Plasmaerzeugung basierendes Verfahren - Google Patents

Auf Plasmaerzeugung basierendes Verfahren

Info

Publication number
DE68928944T2
DE68928944T2 DE68928944T DE68928944T DE68928944T2 DE 68928944 T2 DE68928944 T2 DE 68928944T2 DE 68928944 T DE68928944 T DE 68928944T DE 68928944 T DE68928944 T DE 68928944T DE 68928944 T2 DE68928944 T2 DE 68928944T2
Authority
DE
Germany
Prior art keywords
process based
plasma generation
plasma
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928944T
Other languages
English (en)
Other versions
DE68928944D1 (de
Inventor
Daniel Lawrence Flamm
Wayne Lee Johnson
Dale Edward Ibbotson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE68928944D1 publication Critical patent/DE68928944D1/de
Publication of DE68928944T2 publication Critical patent/DE68928944T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3345—Problems associated with etching anisotropy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor
DE68928944T 1988-12-28 1989-12-13 Auf Plasmaerzeugung basierendes Verfahren Expired - Fee Related DE68928944T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/290,740 US4918031A (en) 1988-12-28 1988-12-28 Processes depending on plasma generation using a helical resonator

Publications (2)

Publication Number Publication Date
DE68928944D1 DE68928944D1 (de) 1999-04-15
DE68928944T2 true DE68928944T2 (de) 1999-08-26

Family

ID=23117347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928944T Expired - Fee Related DE68928944T2 (de) 1988-12-28 1989-12-13 Auf Plasmaerzeugung basierendes Verfahren

Country Status (6)

Country Link
US (1) US4918031A (de)
EP (2) EP0871199A3 (de)
JP (1) JPH02222141A (de)
KR (1) KR930007100B1 (de)
CA (1) CA1303253C (de)
DE (1) DE68928944T2 (de)

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JPH02222141A (ja) 1990-09-04
EP0376546B1 (de) 1999-03-10
EP0376546A3 (de) 1991-07-03
EP0871199A3 (de) 1998-11-04
EP0376546A2 (de) 1990-07-04
KR900010952A (ko) 1990-07-11
US4918031A (en) 1990-04-17
EP0871199A2 (de) 1998-10-14
DE68928944D1 (de) 1999-04-15
CA1303253C (en) 1992-06-09
KR930007100B1 (ko) 1993-07-29

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