DE69012414D1 - Ionen-Implantationsgerät, in dem das elektrische Aufladen von Substraten vermieden wird. - Google Patents

Ionen-Implantationsgerät, in dem das elektrische Aufladen von Substraten vermieden wird.

Info

Publication number
DE69012414D1
DE69012414D1 DE69012414T DE69012414T DE69012414D1 DE 69012414 D1 DE69012414 D1 DE 69012414D1 DE 69012414 T DE69012414 T DE 69012414T DE 69012414 T DE69012414 T DE 69012414T DE 69012414 D1 DE69012414 D1 DE 69012414D1
Authority
DE
Germany
Prior art keywords
tube section
wafer
tube
ion implantation
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69012414T
Other languages
English (en)
Other versions
DE69012414T2 (de
Inventor
Tadamoto Tamai
Junichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ion Technology Co Ltd
Original Assignee
Sumitomo Eaton Nova Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1114097A external-priority patent/JP2762298B2/ja
Priority claimed from JP1124518A external-priority patent/JP2762299B2/ja
Application filed by Sumitomo Eaton Nova Corp filed Critical Sumitomo Eaton Nova Corp
Publication of DE69012414D1 publication Critical patent/DE69012414D1/de
Application granted granted Critical
Publication of DE69012414T2 publication Critical patent/DE69012414T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
DE69012414T 1989-05-09 1990-05-08 Ionen-Implantationsgerät, in dem das elektrische Aufladen von Substraten vermieden wird. Expired - Fee Related DE69012414T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1114097A JP2762298B2 (ja) 1989-05-09 1989-05-09 イオン注入装置の帯電抑制装置
JP1124518A JP2762299B2 (ja) 1989-05-19 1989-05-19 イオン注入装置の帯電抑制装置

Publications (2)

Publication Number Publication Date
DE69012414D1 true DE69012414D1 (de) 1994-10-20
DE69012414T2 DE69012414T2 (de) 1995-02-16

Family

ID=26452937

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012414T Expired - Fee Related DE69012414T2 (de) 1989-05-09 1990-05-08 Ionen-Implantationsgerät, in dem das elektrische Aufladen von Substraten vermieden wird.

Country Status (4)

Country Link
US (1) US4994674A (de)
EP (1) EP0397120B1 (de)
AT (1) ATE111635T1 (de)
DE (1) DE69012414T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120516B2 (ja) * 1990-07-26 1995-12-20 株式会社東芝 低エネルギ−電子の照射方法および照射装置
US5113074A (en) * 1991-01-29 1992-05-12 Eaton Corporation Ion beam potential detection probe
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
US5531420A (en) * 1994-07-01 1996-07-02 Eaton Corporation Ion beam electron neutralizer
US5691537A (en) * 1996-01-22 1997-11-25 Chen; John Method and apparatus for ion beam transport
US5856674A (en) * 1997-09-16 1999-01-05 Eaton Corporation Filament for ion implanter plasma shower
EP1145274A1 (de) * 1999-10-15 2001-10-17 Philips Electron Optics B.V. Korpuskularoptisches gerät
US6331227B1 (en) 1999-12-14 2001-12-18 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
GB2440414B (en) * 2006-07-12 2010-10-27 Applied Materials Inc An ion beam guide tube

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62103951A (ja) * 1985-10-29 1987-05-14 Toshiba Corp イオン注入装置
JPS6410563A (en) * 1987-07-02 1989-01-13 Sumitomo Eaton Nova Electric charging suppressor of ion implanter

Also Published As

Publication number Publication date
EP0397120A2 (de) 1990-11-14
US4994674A (en) 1991-02-19
ATE111635T1 (de) 1994-09-15
EP0397120A3 (de) 1991-05-15
DE69012414T2 (de) 1995-02-16
EP0397120B1 (de) 1994-09-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee