DE69014027T2 - Dünnfilmkondensatoren und deren Herstellungsverfahren. - Google Patents

Dünnfilmkondensatoren und deren Herstellungsverfahren.

Info

Publication number
DE69014027T2
DE69014027T2 DE69014027T DE69014027T DE69014027T2 DE 69014027 T2 DE69014027 T2 DE 69014027T2 DE 69014027 T DE69014027 T DE 69014027T DE 69014027 T DE69014027 T DE 69014027T DE 69014027 T2 DE69014027 T2 DE 69014027T2
Authority
DE
Germany
Prior art keywords
thin film
manufacturing processes
film capacitors
capacitors
processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69014027T
Other languages
English (en)
Other versions
DE69014027D1 (de
Inventor
Shogo Matsubara
Yoichi Miyasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1226030A external-priority patent/JPH0687490B2/ja
Priority claimed from JP2057059A external-priority patent/JPH0687493B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69014027D1 publication Critical patent/DE69014027D1/de
Application granted granted Critical
Publication of DE69014027T2 publication Critical patent/DE69014027T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
DE69014027T 1989-08-30 1990-08-30 Dünnfilmkondensatoren und deren Herstellungsverfahren. Expired - Lifetime DE69014027T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1226030A JPH0687490B2 (ja) 1989-08-30 1989-08-30 薄膜コンデンサおよびその製造方法
JP2057059A JPH0687493B2 (ja) 1990-03-07 1990-03-07 薄膜コンデンサ

Publications (2)

Publication Number Publication Date
DE69014027D1 DE69014027D1 (de) 1994-12-15
DE69014027T2 true DE69014027T2 (de) 1995-06-01

Family

ID=26398060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69014027T Expired - Lifetime DE69014027T2 (de) 1989-08-30 1990-08-30 Dünnfilmkondensatoren und deren Herstellungsverfahren.

Country Status (3)

Country Link
US (1) US5122923A (de)
EP (1) EP0415750B1 (de)
DE (1) DE69014027T2 (de)

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US5699035A (en) * 1991-12-13 1997-12-16 Symetrix Corporation ZnO thin-film varistors and method of making the same
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US5601869A (en) * 1991-12-13 1997-02-11 Symetrix Corporation Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same
US6174564B1 (en) 1991-12-13 2001-01-16 Symetrix Corporation Method of making metal polyoxyalkylated precursor solutions
US5559260A (en) * 1991-12-13 1996-09-24 Symetrix Corporation Precursors and processes for making metal oxides
US5624707A (en) * 1991-12-13 1997-04-29 Symetrix Corporation Method of forming ABO3 films with excess B-site modifiers
US5216572A (en) * 1992-03-19 1993-06-01 Ramtron International Corporation Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors
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US6327135B1 (en) 1992-12-18 2001-12-04 Symetrix Corp Thin film capacitors on gallium arsenide substrate
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US5383088A (en) * 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
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US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
US6639262B2 (en) * 1993-12-10 2003-10-28 Symetrix Corporation Metal oxide integrated circuit on silicon germanium substrate
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JP3628041B2 (ja) * 1994-06-29 2005-03-09 テキサス インスツルメンツ インコーポレイテツド 半導体装置の製造方法
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US5489548A (en) * 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
US5585300A (en) * 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5589284A (en) * 1994-08-01 1996-12-31 Texas Instruments Incorporated Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
US5576240A (en) * 1994-12-09 1996-11-19 Lucent Technologies Inc. Method for making a metal to metal capacitor
JP3683972B2 (ja) * 1995-03-22 2005-08-17 三菱電機株式会社 半導体装置
JP3380373B2 (ja) * 1995-06-30 2003-02-24 三菱電機株式会社 半導体記憶装置及びその製造方法
JP3929513B2 (ja) * 1995-07-07 2007-06-13 ローム株式会社 誘電体キャパシタおよびその製造方法
US5739049A (en) * 1995-08-21 1998-04-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate
US5838605A (en) * 1996-03-20 1998-11-17 Ramtron International Corporation Iridium oxide local interconnect
US5780886A (en) * 1996-05-30 1998-07-14 Oki Electric Industry Co., Ltd. Non-volatile semiconductor memory cell and method for production thereof
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JP3396131B2 (ja) * 1996-06-28 2003-04-14 三菱電機株式会社 半導体装置およびその製造方法
US5902131A (en) * 1997-05-09 1999-05-11 Ramtron International Corporation Dual-level metalization method for integrated circuit ferroelectric devices
US6027860A (en) * 1997-08-13 2000-02-22 Micron Technology, Inc. Method for forming a structure using redeposition of etchable layer
KR100269309B1 (ko) 1997-09-29 2000-10-16 윤종용 고집적강유전체메모리장치및그제조방법
JP3878724B2 (ja) 1997-10-14 2007-02-07 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
US6144547A (en) * 1997-11-24 2000-11-07 Avx Corporation Miniature surface mount capacitor and method of making same
US6678927B1 (en) 1997-11-24 2004-01-20 Avx Corporation Miniature surface mount capacitor and method of making same
US5943580A (en) * 1997-12-15 1999-08-24 Motorola, Inc. Method of forming a capacitor or an inductor on a substrate
JP3976288B2 (ja) * 1998-01-21 2007-09-12 ローム株式会社 半導体装置および半導体装置の製造方法
WO1999045598A1 (en) 1998-03-04 1999-09-10 Seiko Epson Corporation Piezoelectric device, ink-jet recording head, method fo manufacture, and printer
US6156619A (en) 1998-06-29 2000-12-05 Oki Electric Industry Co., Ltd. Semiconductor device and method of fabricating
US6541375B1 (en) 1998-06-30 2003-04-01 Matsushita Electric Industrial Co., Ltd. DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
US6197628B1 (en) * 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
JP3517876B2 (ja) * 1998-10-14 2004-04-12 セイコーエプソン株式会社 強誘電体薄膜素子の製造方法、インクジェット式記録ヘッド及びインクジェットプリンタ
DE19902029A1 (de) * 1999-01-20 2000-07-27 Philips Corp Intellectual Pty Spannungsfester Dünnschichtkondensator mit Interdigitalstruktur
US6720096B1 (en) * 1999-11-17 2004-04-13 Sanyo Electric Co., Ltd. Dielectric element
US6475854B2 (en) 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
US6579783B2 (en) 2000-07-07 2003-06-17 Applied Materials, Inc. Method for high temperature metal deposition for reducing lateral silicidation
US6903005B1 (en) 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US6461909B1 (en) 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
JP2002100740A (ja) * 2000-09-21 2002-04-05 Oki Electric Ind Co Ltd 半導体記憶素子及びその製造方法
US6890629B2 (en) * 2001-09-21 2005-05-10 Michael D. Casper Integrated thin film capacitor/inductor/interconnect system and method
US7327582B2 (en) * 2000-09-21 2008-02-05 Ultrasource, Inc. Integrated thin film capacitor/inductor/interconnect system and method
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US7378719B2 (en) * 2000-12-20 2008-05-27 Micron Technology, Inc. Low leakage MIM capacitor
US6794705B2 (en) * 2000-12-28 2004-09-21 Infineon Technologies Ag Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
JP2002231903A (ja) 2001-02-06 2002-08-16 Sanyo Electric Co Ltd 誘電体素子およびその製造方法
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
WO2003030224A2 (en) 2001-07-25 2003-04-10 Applied Materials, Inc. Barrier formation using novel sputter-deposition method
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US7425877B2 (en) * 2001-09-21 2008-09-16 Ultrasource, Inc. Lange coupler system and method
US6998696B2 (en) * 2001-09-21 2006-02-14 Casper Michael D Integrated thin film capacitor/inductor/interconnect system and method
US6743643B2 (en) * 2001-11-29 2004-06-01 Symetrix Corporation Stacked memory cell having diffusion barriers
US6815223B2 (en) 2002-11-22 2004-11-09 Symetrix Corporation Low thermal budget fabrication of ferroelectric memory using RTP
US7029972B2 (en) * 2004-07-20 2006-04-18 Texas Instruments Incorporated Method of manufacturing a metal-insulator-metal capacitor
US7817043B2 (en) * 2004-11-30 2010-10-19 Canon Kabushiki Kaisha Radio frequency tag
JP4461386B2 (ja) * 2005-10-31 2010-05-12 Ｔｄｋ株式会社 薄膜デバイスおよびその製造方法
WO2008155945A1 (ja) * 2007-06-20 2008-12-24 Murata Manufacturing Co., Ltd. 誘電体セラミック組成物及び積層セラミックコンデンサ
RU200183U1 (ru) * 2020-07-15 2020-10-08 Овсеп Гагикович Андреасян Островковый тонкоплёночный конденсатор
WO2022015201A1 (ru) * 2020-07-15 2022-01-20 Овсеп Гагикович АНДРЕАСЯН Островковый тонкоплёночный конденсатор
WO2022070889A1 (ja) * 2020-09-29 2022-04-07 三井金属鉱業株式会社 樹脂組成物、樹脂付き金属箔、金属張積層シート及びキャパシタ素子

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JPS63312613A (ja) * 1987-06-15 1988-12-21 Nec Corp 単板コンデンサ−
US4981633A (en) * 1988-04-29 1991-01-01 Alfred University Process for preparing a PTC thermistor
US4982309A (en) * 1989-07-17 1991-01-01 National Semiconductor Corporation Electrodes for electrical ceramic oxide devices

Also Published As

Publication number Publication date
DE69014027D1 (de) 1994-12-15
EP0415750B1 (de) 1994-11-09
US5122923A (en) 1992-06-16
EP0415750A1 (de) 1991-03-06

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