DE69015868D1 - Herstellungsverfahren einer logischen Halbleiterschaltung mit nichtflüchtigem Speicher. - Google Patents

Herstellungsverfahren einer logischen Halbleiterschaltung mit nichtflüchtigem Speicher.

Info

Publication number
DE69015868D1
DE69015868D1 DE69015868T DE69015868T DE69015868D1 DE 69015868 D1 DE69015868 D1 DE 69015868D1 DE 69015868 T DE69015868 T DE 69015868T DE 69015868 T DE69015868 T DE 69015868T DE 69015868 D1 DE69015868 D1 DE 69015868D1
Authority
DE
Germany
Prior art keywords
manufacturing
volatile memory
logic circuit
semiconductor logic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69015868T
Other languages
English (en)
Other versions
DE69015868T2 (de
Inventor
Naoki Hanada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69015868D1 publication Critical patent/DE69015868D1/de
Application granted granted Critical
Publication of DE69015868T2 publication Critical patent/DE69015868T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/46—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with an inter-gate dielectric layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69015868T 1989-04-28 1990-04-27 Herstellungsverfahren einer logischen Halbleiterschaltung mit nichtflüchtigem Speicher. Expired - Fee Related DE69015868T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1110505A JP2509697B2 (ja) 1989-04-28 1989-04-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69015868D1 true DE69015868D1 (de) 1995-02-23
DE69015868T2 DE69015868T2 (de) 1995-06-22

Family

ID=14537474

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69015868T Expired - Fee Related DE69015868T2 (de) 1989-04-28 1990-04-27 Herstellungsverfahren einer logischen Halbleiterschaltung mit nichtflüchtigem Speicher.

Country Status (5)

Country Link
US (1) US5158902A (de)
EP (1) EP0395084B1 (de)
JP (1) JP2509697B2 (de)
KR (1) KR930002295B1 (de)
DE (1) DE69015868T2 (de)

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JP2952887B2 (ja) * 1989-05-20 1999-09-27 富士通株式会社 半導体装置およびその製造方法
KR100199258B1 (ko) * 1990-02-09 1999-06-15 가나이 쓰도무 반도체집적회로장치
KR930007527B1 (ko) * 1990-09-22 1993-08-12 삼성전자 주식회사 스토리지 셀 어레이와 주변회로를 갖는 불휘발성 반도체 메모리 장치의 제조방법 및 그 구조
JP2573432B2 (ja) * 1991-02-18 1997-01-22 株式会社東芝 半導体集積回路の製造方法
JP3049100B2 (ja) * 1991-03-04 2000-06-05 富士通株式会社 半導体装置及びその製造方法
KR960009995B1 (ko) * 1992-07-31 1996-07-25 삼성전자 주식회사 반도체 장치의 제조 방법 및 그 구조
US5342801A (en) * 1993-03-08 1994-08-30 National Semiconductor Corporation Controllable isotropic plasma etching technique for the suppression of stringers in memory cells
US5429966A (en) * 1993-07-22 1995-07-04 National Science Council Method of fabricating a textured tunnel oxide for EEPROM applications
US5385856A (en) * 1993-12-02 1995-01-31 United Microelectronics Corporation Manufacture of the fieldless split-gate EPROM/Flash EPROM
JP2924622B2 (ja) * 1993-12-28 1999-07-26 日本電気株式会社 半導体装置の製造方法
US5716864A (en) * 1994-07-22 1998-02-10 Nkk Corporation Method of manufacturing a non-volatile semiconductor memory device with peripheral transistor
TW295695B (de) * 1994-09-19 1997-01-11 Motorola Inc
JP3600326B2 (ja) * 1994-09-29 2004-12-15 旺宏電子股▲ふん▼有限公司 不揮発性半導体メモリ装置およびその製造方法
JPH08213572A (ja) * 1994-11-30 1996-08-20 Nkk Corp 不揮発性半導体装置およびその製造方法
EP1111673A1 (de) * 1995-05-10 2001-06-27 STMicroelectronics S.r.l. Herstellungsverfahren eines integrierten MOS-Schaltkreises mit Bestandteilen mit unterschiedlichen Dielektrika
US5834351A (en) * 1995-08-25 1998-11-10 Macronix International, Co. Ltd. Nitridation process with peripheral region protection
US5830772A (en) * 1995-09-08 1998-11-03 United Microelectronicscorp. Method for fabricating isolating regions for buried conductors
EP0785570B1 (de) * 1996-01-22 2002-12-04 STMicroelectronics S.r.l. Herstellung von natürlichen Transistoren in einem Verfahren für nichtflüchtige Speicher
KR100199382B1 (ko) * 1996-06-27 1999-06-15 김영환 플래쉬 메모리 소자의 제조방법
KR19980033279A (ko) * 1996-10-29 1998-07-25 윌리엄비.켐플러 개선된 소거 가능한 프로그램 가능 판독 전용 메모리 및 그 제조 방법
EP0993036A1 (de) * 1998-10-09 2000-04-12 STMicroelectronics S.r.l. Verfahren zur Herstellung einer integrierten Halbleiteranordnung mit einem Feldeffekttransistor mit schwebendem Gate und einem logischen Feldeffekttransistor, und entsprechende Anordnung
US6110782A (en) * 1998-11-19 2000-08-29 Taiwan Semiconductor Manufacturing Company Method to combine high voltage device and salicide process
JP3314807B2 (ja) 1998-11-26 2002-08-19 日本電気株式会社 半導体装置の製造方法
KR100343151B1 (ko) * 1999-10-28 2002-07-05 김덕중 Ｓｉｐｏｓ를 이용한 고전압 반도체소자 및 그 제조방법
US6262455B1 (en) * 1999-11-02 2001-07-17 Philips Semiconductor, Inc. Method of forming dual gate oxide layers of varying thickness on a single substrate
JP3450770B2 (ja) 1999-11-29 2003-09-29 松下電器産業株式会社 半導体装置の製造方法
US6685754B2 (en) * 2001-03-06 2004-02-03 Alchemix Corporation Method for the production of hydrogen-containing gaseous mixtures
JP3921363B2 (ja) * 2001-08-20 2007-05-30 松下電器産業株式会社 不揮発性半導体記憶装置の製造方法
US20030232507A1 (en) * 2002-06-12 2003-12-18 Macronix International Co., Ltd. Method for fabricating a semiconductor device having an ONO film
US7867844B2 (en) 2008-05-28 2011-01-11 Micron Technology, Inc. Methods of forming NAND cell units
US10879250B2 (en) * 2017-08-29 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure for memory device and method for forming the same

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JPS53124084A (en) * 1977-04-06 1978-10-30 Hitachi Ltd Semiconductor memory device containing floating type poly silicon layer and its manufacture
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS577162A (en) * 1980-06-17 1982-01-14 Toshiba Corp Nonvolatile semiconductor memory and manufacture therefor
JPS5713772A (en) * 1980-06-30 1982-01-23 Hitachi Ltd Semiconductor device and manufacture thereof
JP2515715B2 (ja) * 1984-02-24 1996-07-10 株式会社日立製作所 半導体集積回路装置の製造方法
US4663645A (en) * 1984-05-23 1987-05-05 Hitachi, Ltd. Semiconductor device of an LDD structure having a floating gate
JPS6142171A (ja) * 1984-08-02 1986-02-28 Ricoh Co Ltd 不揮発性半導体メモリ装置の製造方法
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
US4598460A (en) * 1984-12-10 1986-07-08 Solid State Scientific, Inc. Method of making a CMOS EPROM with independently selectable thresholds
US4635347A (en) * 1985-03-29 1987-01-13 Advanced Micro Devices, Inc. Method of fabricating titanium silicide gate electrodes and interconnections
JPH07114264B2 (ja) * 1985-08-23 1995-12-06 株式会社日立製作所 半導体集積回路装置の製造方法
JPH0793381B2 (ja) * 1985-10-28 1995-10-09 株式会社日立製作所 半導体集積回路装置
US4745083A (en) * 1986-11-19 1988-05-17 Sprague Electric Company Method of making a fast IGFET
US4835740A (en) * 1986-12-26 1989-05-30 Kabushiki Kaisha Toshiba Floating gate type semiconductor memory device
IT1225873B (it) * 1987-07-31 1990-12-07 Sgs Microelettrica S P A Catan Procedimento per la fabbricazione di celle di memoria eprom cmos con riduzione del numero di fasi di mascheratura.
US4830974A (en) * 1988-01-11 1989-05-16 Atmel Corporation EPROM fabrication process
DE3802858A1 (de) * 1988-02-01 1989-08-03 Fischer Artur Werke Gmbh Winkelverbindung fuer streben eines spielbaukastens
US4851361A (en) * 1988-02-04 1989-07-25 Atmel Corporation Fabrication process for EEPROMS with high voltage transistors
US4859619A (en) * 1988-07-15 1989-08-22 Atmel Corporation EPROM fabrication process forming tub regions for high voltage devices
JPH0282581A (ja) * 1988-09-19 1990-03-23 Hitachi Ltd 半導体装置の製造方法およびそれにより得られる半導体装置

Also Published As

Publication number Publication date
JP2509697B2 (ja) 1996-06-26
EP0395084B1 (de) 1995-01-11
EP0395084A2 (de) 1990-10-31
EP0395084A3 (de) 1992-02-12
JPH02288363A (ja) 1990-11-28
US5158902A (en) 1992-10-27
KR900017191A (ko) 1990-11-15
DE69015868T2 (de) 1995-06-22
KR930002295B1 (ko) 1993-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee