DE69018579T2 - Verfahren und Vorrichtung zur Herstellung eines Mehrelement-Dünnfilms mittels Ionenstrahlsputtern. - Google Patents

Verfahren und Vorrichtung zur Herstellung eines Mehrelement-Dünnfilms mittels Ionenstrahlsputtern.

Info

Publication number
DE69018579T2
DE69018579T2 DE69018579T DE69018579T DE69018579T2 DE 69018579 T2 DE69018579 T2 DE 69018579T2 DE 69018579 T DE69018579 T DE 69018579T DE 69018579 T DE69018579 T DE 69018579T DE 69018579 T2 DE69018579 T2 DE 69018579T2
Authority
DE
Germany
Prior art keywords
producing
thin film
ion beam
beam sputtering
element thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018579T
Other languages
English (en)
Other versions
DE69018579D1 (de
Inventor
Naoya Kanda
Yasushi Ishikawa
Kunio Matsumoto
Hiroshi Asao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69018579D1 publication Critical patent/DE69018579D1/de
Application granted granted Critical
Publication of DE69018579T2 publication Critical patent/DE69018579T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
DE69018579T 1989-12-04 1990-12-04 Verfahren und Vorrichtung zur Herstellung eines Mehrelement-Dünnfilms mittels Ionenstrahlsputtern. Expired - Fee Related DE69018579T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1313370A JP2713481B2 (ja) 1989-12-04 1989-12-04 イオンビームスパッタによる多元系薄膜形成方法および多元系薄膜形成装置

Publications (2)

Publication Number Publication Date
DE69018579D1 DE69018579D1 (de) 1995-05-18
DE69018579T2 true DE69018579T2 (de) 1995-09-07

Family

ID=18040443

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018579T Expired - Fee Related DE69018579T2 (de) 1989-12-04 1990-12-04 Verfahren und Vorrichtung zur Herstellung eines Mehrelement-Dünnfilms mittels Ionenstrahlsputtern.

Country Status (4)

Country Link
US (1) US5089104A (de)
EP (1) EP0431558B1 (de)
JP (1) JP2713481B2 (de)
DE (1) DE69018579T2 (de)

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US5492605A (en) * 1992-08-24 1996-02-20 International Business Machines Corporation Ion beam induced sputtered multilayered magnetic structures
US5364492A (en) * 1992-09-17 1994-11-15 Varian Associates, Inc. Method of deposing by molecular beam epitaxy
JP3224293B2 (ja) * 1992-12-01 2001-10-29 松下電器産業株式会社 誘電体薄膜の製造方法
GB9225270D0 (en) * 1992-12-03 1993-01-27 Gec Ferranti Defence Syst Depositing different materials on a substrate
JP3340803B2 (ja) * 1993-06-25 2002-11-05 株式会社荏原製作所 高速原子ビームスパッタ成膜装置及び傾斜機能薄膜の製造方法
JP3308135B2 (ja) * 1994-11-01 2002-07-29 松下電器産業株式会社 インプロセス膜厚モニター装置及び方法
EP0739001B1 (de) * 1995-04-17 2001-02-21 Read-Rite Corporation Bildung eines isolierenden dünnen Filmes durch eine Vielzahl von Ionenstrahlen
US6224718B1 (en) 1999-07-14 2001-05-01 Veeco Instruments, Inc. Target assembly for ion beam sputter deposition with multiple paddles each having targets on both sides
US7194801B2 (en) * 2000-03-24 2007-03-27 Cymbet Corporation Thin-film battery having ultra-thin electrolyte and associated method
US6610352B2 (en) * 2000-12-22 2003-08-26 Ifire Technology, Inc. Multiple source deposition process
US6679976B2 (en) 2001-03-16 2004-01-20 4Wave, Inc. System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
US6402900B1 (en) 2001-03-16 2002-06-11 4 Wave, Inc. System and method for performing sputter deposition using ion sources, targets and a substrate arranged about the faces of a cube
DE10120383B4 (de) * 2001-04-25 2007-07-26 X-Fab Semiconductor Foundries Ag Verfahren zur Metallisierung von Siliziumscheiben durch Aufsputtern
GB0127251D0 (en) * 2001-11-13 2002-01-02 Nordiko Ltd Apparatus
JP2003158308A (ja) * 2001-11-22 2003-05-30 Communication Research Laboratory 超伝導材料の製造方法
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US20040131760A1 (en) * 2003-01-02 2004-07-08 Stuart Shakespeare Apparatus and method for depositing material onto multiple independently moving substrates in a chamber
US6906436B2 (en) * 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7603144B2 (en) * 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
WO2005067645A2 (en) * 2004-01-06 2005-07-28 Cymbet Corporation Layered barrier structure having one or more definable layers and method
US7776478B2 (en) * 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
KR101387855B1 (ko) * 2005-07-15 2014-04-22 사임베트 코퍼레이션 연질 및 경질 전해질층을 가진 박막 배터리 및 그 제조방법
US20070012244A1 (en) * 2005-07-15 2007-01-18 Cymbet Corporation Apparatus and method for making thin-film batteries with soft and hard electrolyte layers
JP4162094B2 (ja) * 2006-05-30 2008-10-08 三菱重工業株式会社 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置
JP4172806B2 (ja) * 2006-09-06 2008-10-29 三菱重工業株式会社 常温接合方法及び常温接合装置
JP5715958B2 (ja) * 2009-10-08 2015-05-13 株式会社フジクラ イオンビームアシストスパッタ装置、酸化物超電導導体の製造装置、イオンビームアシストスパッタ方法及び酸化物超電導導体の製造方法
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US9988711B2 (en) * 2015-05-14 2018-06-05 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for multilayer deposition
EP3762989A4 (de) 2018-03-07 2021-12-15 Space Charge, LLC Dünnfilm-festkörper-energiespeichervorrichtungen
US20200102644A1 (en) * 2018-10-02 2020-04-02 Korea Advanced Institute Of Science And Technology Method of preparing multicomponent nanopattern
CN114774846A (zh) * 2022-04-14 2022-07-22 中建材玻璃新材料研究院集团有限公司 一种n掺杂c膜的制备方法

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US3734620A (en) * 1971-04-01 1973-05-22 Ibm Multiple band atomic absorption apparatus for simultaneously measuring different physical parameters of a material
JPS57161063A (en) * 1981-03-31 1982-10-04 Nippon Sheet Glass Co Ltd Method and device for sticking metallic oxide film on substrate
US4637869A (en) * 1984-09-04 1987-01-20 The Standard Oil Company Dual ion beam deposition of amorphous semiconductor films
US4673475A (en) * 1985-06-28 1987-06-16 The Standard Oil Company Dual ion beam deposition of dense films
DE3625700A1 (de) * 1986-07-30 1988-02-04 Siemens Ag Einrichtung zur herstellung und analyse von mehrkomoponentenfilmen
JPS6353265A (ja) * 1986-08-23 1988-03-07 Nissin Electric Co Ltd イオンビ−ムスパツタリング装置
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
DE3709177A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden
JPH01108378A (ja) * 1987-10-21 1989-04-25 Mitsubishi Electric Corp スパツタ装置
JPH01261204A (ja) * 1988-04-11 1989-10-18 Fujikura Ltd 酸化物系超電導体の製造方法
JPH02217468A (ja) * 1989-02-20 1990-08-30 Olympus Optical Co Ltd 化合物薄膜形成装置

Also Published As

Publication number Publication date
EP0431558B1 (de) 1995-04-12
DE69018579D1 (de) 1995-05-18
US5089104A (en) 1992-02-18
EP0431558A2 (de) 1991-06-12
JP2713481B2 (ja) 1998-02-16
EP0431558A3 (en) 1991-09-18
JPH03173770A (ja) 1991-07-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee