DE69020367D1 - Licht ausstrahlende Vorrichtung. - Google Patents

Licht ausstrahlende Vorrichtung.

Info

Publication number
DE69020367D1
DE69020367D1 DE69020367T DE69020367T DE69020367D1 DE 69020367 D1 DE69020367 D1 DE 69020367D1 DE 69020367 T DE69020367 T DE 69020367T DE 69020367 T DE69020367 T DE 69020367T DE 69020367 D1 DE69020367 D1 DE 69020367D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69020367T
Other languages
English (en)
Other versions
DE69020367T2 (de
Inventor
Tadashi Narusawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69020367D1 publication Critical patent/DE69020367D1/de
Publication of DE69020367T2 publication Critical patent/DE69020367T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/0955Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
    • H01S3/0959Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by an electron beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
DE69020367T 1989-01-17 1990-01-15 Licht ausstrahlende Vorrichtung. Expired - Fee Related DE69020367T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP820489A JP2548352B2 (ja) 1989-01-17 1989-01-17 発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
DE69020367D1 true DE69020367D1 (de) 1995-08-03
DE69020367T2 DE69020367T2 (de) 1996-02-29

Family

ID=11686724

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69020367T Expired - Fee Related DE69020367T2 (de) 1989-01-17 1990-01-15 Licht ausstrahlende Vorrichtung.

Country Status (5)

Country Link
US (1) US5119386A (de)
EP (1) EP0379325B1 (de)
JP (1) JP2548352B2 (de)
KR (1) KR930010732B1 (de)
DE (1) DE69020367T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2661566B1 (fr) * 1990-04-25 1995-03-31 Commissariat Energie Atomique Laser compact a semi-conducteur du type a pompage electronique.
JP2757596B2 (ja) * 1991-07-18 1998-05-25 松下電器産業株式会社 発光素子
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5763997A (en) 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5600200A (en) 1992-03-16 1997-02-04 Microelectronics And Computer Technology Corporation Wire-mesh cathode
US5679043A (en) 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US6127773A (en) 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
FR2690005B1 (fr) * 1992-04-10 1994-05-20 Commissariat A Energie Atomique Canon a electrons compact comportant une source d'electrons a micropointes et laser a semi-conducteur utilisant ce canon pour le pompage electronique.
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
AU1043895A (en) 1993-11-04 1995-05-23 Microelectronics And Computer Technology Corporation Methods for fabricating flat panel display systems and components
US6204834B1 (en) 1994-08-17 2001-03-20 Si Diamond Technology, Inc. System and method for achieving uniform screen brightness within a matrix display
US5531880A (en) * 1994-09-13 1996-07-02 Microelectronics And Computer Technology Corporation Method for producing thin, uniform powder phosphor for display screens
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5628659A (en) * 1995-04-24 1997-05-13 Microelectronics And Computer Corporation Method of making a field emission electron source with random micro-tip structures
DE19531455A1 (de) * 1995-08-26 1997-02-27 Gms Ges Fuer Mes Und Systemtec Strahlungsgepumpter Festkörper-Farbstofflaser
CN103053007B (zh) 2010-06-03 2015-12-02 国立大学法人京都大学 紫外线照射装置
WO2011161775A1 (ja) * 2010-06-23 2011-12-29 株式会社日立製作所 電子線励起型発光装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890503A (en) * 1968-11-29 1975-06-17 Hewlett Packard Co Stimulated emission light source pumped by electron beam of field emission initiated vacuum arc
JPS4862392A (de) * 1971-12-06 1973-08-31
US3803510A (en) * 1972-09-27 1974-04-09 Rca Corp Electron-beam pumped laser with extended life
JPS5199464A (de) * 1975-02-28 1976-09-02 Hitachi Ltd
FR2432213A1 (fr) * 1978-07-25 1980-02-22 Labo Electronique Physique Procede pour souder un objet en sulfure de zinc fritte a un objet en verre, ceramique ou metal, produit obtenu et utilisation dudit produit
NL8300631A (nl) * 1983-02-21 1984-09-17 Philips Nv Inrichting voor het opwekken van coherente straling.
NL8400632A (nl) * 1984-02-29 1985-09-16 Philips Nv Inrichting voor het opwekken van elektromagnetische straling.
DE3586582T2 (de) * 1984-12-04 1993-04-01 Philips Nv Durch elektronen gepumpter halbleiterlaser und vorrichtung.

Also Published As

Publication number Publication date
EP0379325A3 (de) 1991-03-20
JP2548352B2 (ja) 1996-10-30
EP0379325B1 (de) 1995-06-28
DE69020367T2 (de) 1996-02-29
EP0379325A2 (de) 1990-07-25
JPH02188980A (ja) 1990-07-25
US5119386A (en) 1992-06-02
KR930010732B1 (ko) 1993-11-08
KR900012393A (ko) 1990-08-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee