DE69021268D1 - Verfahren zur Herstellung eines Hochdruckphasenmaterials. - Google Patents
Verfahren zur Herstellung eines Hochdruckphasenmaterials.Info
- Publication number
- DE69021268D1 DE69021268D1 DE69021268T DE69021268T DE69021268D1 DE 69021268 D1 DE69021268 D1 DE 69021268D1 DE 69021268 T DE69021268 T DE 69021268T DE 69021268 T DE69021268 T DE 69021268T DE 69021268 D1 DE69021268 D1 DE 69021268D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- high pressure
- phase material
- pressure phase
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12855989 | 1989-05-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69021268D1 true DE69021268D1 (de) | 1995-09-07 |
DE69021268T2 DE69021268T2 (de) | 1996-01-11 |
Family
ID=14987757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69021268T Expired - Lifetime DE69021268T2 (de) | 1989-05-22 | 1990-05-22 | Verfahren zur Herstellung eines Hochdruckphasenmaterials. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5127983A (de) |
EP (1) | EP0399483B1 (de) |
JP (1) | JP2654232B2 (de) |
DE (1) | DE69021268T2 (de) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6007916A (en) * | 1989-04-06 | 1999-12-28 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond for wiring drawing dies and process for producing the same |
DE69016240T3 (de) * | 1989-04-06 | 1999-03-11 | Sumitomo Electric Industries | Diamant für Abrichtungsvorrichtung |
JPH0590871A (ja) * | 1991-09-27 | 1993-04-09 | Sumitomo Electric Ind Ltd | 表面弾性波素子 |
US5443032A (en) * | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
US5614019A (en) * | 1992-06-08 | 1997-03-25 | Air Products And Chemicals, Inc. | Method for the growth of industrial crystals |
US5334283A (en) * | 1992-08-31 | 1994-08-02 | The University Of North Carolina At Chapel Hill | Process for selectively etching diamond |
US5474021A (en) * | 1992-09-24 | 1995-12-12 | Sumitomo Electric Industries, Ltd. | Epitaxial growth of diamond from vapor phase |
US5300188A (en) * | 1992-11-13 | 1994-04-05 | Kobe Development Corp. | Process for making substantially smooth diamond |
US5499601A (en) * | 1993-01-14 | 1996-03-19 | Sumitomo Electric Industries, Ltd. | Method for vapor phase synthesis of diamond |
JPH0794303A (ja) * | 1993-05-04 | 1995-04-07 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜サーミスタ |
US5442199A (en) * | 1993-05-14 | 1995-08-15 | Kobe Steel Usa, Inc. | Diamond hetero-junction rectifying element |
US5363687A (en) * | 1993-09-14 | 1994-11-15 | General Electric Company | Diamond wire die |
US5361621A (en) * | 1993-10-27 | 1994-11-08 | General Electric Company | Multiple grained diamond wire die |
US5465603A (en) * | 1993-11-05 | 1995-11-14 | General Electric Company | Optically improved diamond wire die |
US5620754A (en) * | 1994-01-21 | 1997-04-15 | Qqc, Inc. | Method of treating and coating substrates |
US5554415A (en) * | 1994-01-18 | 1996-09-10 | Qqc, Inc. | Substrate coating techniques, including fabricating materials on a surface of a substrate |
US5731046A (en) * | 1994-01-18 | 1998-03-24 | Qqc, Inc. | Fabrication of diamond and diamond-like carbon coatings |
JP3344441B2 (ja) * | 1994-03-25 | 2002-11-11 | 住友電気工業株式会社 | 表面弾性波素子 |
JP3498363B2 (ja) * | 1994-06-13 | 2004-02-16 | 住友電気工業株式会社 | ダイヤモンドの合成方法 |
US5587210A (en) * | 1994-06-28 | 1996-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Growing and releasing diamonds |
JP4032482B2 (ja) * | 1997-04-18 | 2008-01-16 | 住友電気工業株式会社 | 単結晶ダイヤモンドの製造方法 |
US6858080B2 (en) * | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
US8591856B2 (en) * | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
CN1210445C (zh) * | 2000-06-15 | 2005-07-13 | 六号元素(控股)公司 | 厚的单晶金刚石层、其制备方法和由该层生产的宝石 |
AU2001281404B2 (en) | 2001-08-08 | 2008-07-03 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
GB0221949D0 (en) | 2002-09-20 | 2002-10-30 | Diamanx Products Ltd | Single crystal diamond |
KR100463050B1 (ko) * | 2002-11-08 | 2004-12-29 | 정 부 박 | 머리핀 |
GB0227261D0 (en) | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
US7866342B2 (en) | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US7866343B2 (en) | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
EP1522611B1 (de) * | 2003-01-28 | 2012-03-07 | Sumitomo Electric Industries, Ltd. | Diamantverbundsubstrat |
US7214359B2 (en) | 2003-02-03 | 2007-05-08 | Showa Denko K.K. | Cubic boron nitride, catalyst for synthesizing cubic boron nitride, and method for producing cubic boron nitride |
GB0317854D0 (en) * | 2003-07-30 | 2003-09-03 | Element Six Ltd | Method of manufacturing diamond substrates |
JP4385764B2 (ja) | 2003-12-26 | 2009-12-16 | 住友電気工業株式会社 | ダイヤモンド単結晶基板の製造方法 |
US7481879B2 (en) * | 2004-01-16 | 2009-01-27 | Sumitomo Electric Industries, Ltd. | Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
US20050181210A1 (en) * | 2004-02-13 | 2005-08-18 | Doering Patrick J. | Diamond structure separation |
JP4736338B2 (ja) | 2004-03-24 | 2011-07-27 | 住友電気工業株式会社 | ダイヤモンド単結晶基板 |
US7314521B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
WO2006048957A1 (ja) | 2004-11-05 | 2006-05-11 | Sumitomo Electric Industries, Ltd. | 単結晶ダイヤモンド |
JP5163920B2 (ja) * | 2005-03-28 | 2013-03-13 | 住友電気工業株式会社 | ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板 |
JP4915128B2 (ja) * | 2005-04-11 | 2012-04-11 | 日亜化学工業株式会社 | 窒化物半導体ウエハ及びその製造方法 |
JP5002982B2 (ja) | 2005-04-15 | 2012-08-15 | 住友電気工業株式会社 | 単結晶ダイヤモンドの製造方法 |
GB0508889D0 (en) * | 2005-04-29 | 2005-06-08 | Element Six Ltd | Diamond transistor and method of manufacture thereof |
US8048223B2 (en) * | 2005-07-21 | 2011-11-01 | Apollo Diamond, Inc. | Grown diamond mosaic separation |
US20070036896A1 (en) * | 2005-08-09 | 2007-02-15 | Chien-Min Sung | Mosaic diamond substrates |
US20090127565A1 (en) * | 2005-08-09 | 2009-05-21 | Chien-Min Sung | P-n junctions on mosaic diamond substrates |
US7399358B2 (en) * | 2005-09-05 | 2008-07-15 | Rajneesh Bhandari | Synthesis of large homoepitaxial monocrystalline diamond |
JP5332168B2 (ja) | 2006-11-17 | 2013-11-06 | 住友電気工業株式会社 | Iii族窒化物結晶の製造方法 |
CN101535533A (zh) * | 2006-11-17 | 2009-09-16 | 住友电气工业株式会社 | 制造ⅲ族氮化物晶体的方法 |
US9064706B2 (en) | 2006-11-17 | 2015-06-23 | Sumitomo Electric Industries, Ltd. | Composite of III-nitride crystal on laterally stacked substrates |
JP2008133151A (ja) * | 2006-11-28 | 2008-06-12 | Sumitomo Electric Ind Ltd | 結晶成長方法、結晶基板、および半導体デバイス |
GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
GB0813490D0 (en) * | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
JP4849691B2 (ja) * | 2008-12-25 | 2012-01-11 | 独立行政法人産業技術総合研究所 | 大面積ダイヤモンド結晶基板及びその製造方法 |
JP5003918B2 (ja) * | 2009-03-27 | 2012-08-22 | 住友電気工業株式会社 | ダイヤモンド単結晶基板 |
JP5509680B2 (ja) * | 2009-06-01 | 2014-06-04 | 三菱化学株式会社 | Iii族窒化物結晶及びその製造方法 |
WO2010140564A1 (ja) * | 2009-06-01 | 2010-12-09 | 三菱化学株式会社 | 窒化物半導体結晶およびその製造方法 |
JP5447289B2 (ja) * | 2009-08-19 | 2014-03-19 | 三菱化学株式会社 | 窒化物半導体結晶およびその製造方法 |
WO2011074599A1 (ja) * | 2009-12-16 | 2011-06-23 | 独立行政法人産業技術総合研究所 | モザイク状ダイヤモンドの製造方法 |
JP5447206B2 (ja) * | 2010-06-15 | 2014-03-19 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法および炭化珪素基板 |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
JP5789929B2 (ja) | 2010-08-03 | 2015-10-07 | 住友電気工業株式会社 | Iii族窒化物結晶の成長方法 |
JP2012089612A (ja) * | 2010-10-18 | 2012-05-10 | Sumitomo Electric Ind Ltd | 炭化珪素基板を有する複合基板 |
JP2012089613A (ja) * | 2010-10-18 | 2012-05-10 | Sumitomo Electric Ind Ltd | 炭化珪素基板を有する複合基板の製造方法 |
JP5601634B2 (ja) * | 2010-11-24 | 2014-10-08 | 住友電気工業株式会社 | 大面積cvdダイヤモンド単結晶の製造方法、及びこれによって得られた大面積cvdダイヤモンド単結晶 |
JP5810762B2 (ja) * | 2011-09-02 | 2015-11-11 | 住友電気工業株式会社 | Iii族窒化物結晶の成長方法 |
JP2013087029A (ja) * | 2011-10-20 | 2013-05-13 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の成長方法 |
JP5418621B2 (ja) * | 2012-02-16 | 2014-02-19 | 住友電気工業株式会社 | ダイヤモンド単結晶基板 |
WO2015199180A1 (ja) | 2014-06-25 | 2015-12-30 | 住友電気工業株式会社 | ダイヤモンド基板の製造方法、ダイヤモンド基板、及び、ダイヤモンド複合基板 |
TWI706061B (zh) * | 2017-04-26 | 2020-10-01 | 新加坡商二A 科技有限公司 | 大單晶鑽石及其生產方法 |
WO2019222458A1 (en) * | 2018-05-18 | 2019-11-21 | Board Of Trustees Of Michigan State University | Methods for forming large area diamond substrates |
US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
CN115104174A (zh) | 2020-02-11 | 2022-09-23 | Slt科技公司 | 改进的iii族氮化物衬底、制备方法和使用方法 |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3661526A (en) * | 1969-06-24 | 1972-05-09 | Univ Case Western Reserve | Process for the catalytic growth of metastable crystals from the vapor phase |
US3749760A (en) * | 1970-04-24 | 1973-07-31 | V Varnin | Method of producing diamonds |
US3714334A (en) * | 1971-05-03 | 1973-01-30 | Diamond Squared Ind Inc | Process for epitaxial growth of diamonds |
US3961103A (en) * | 1972-07-12 | 1976-06-01 | Space Sciences, Inc. | Film deposition |
DD140984A1 (de) * | 1979-01-04 | 1980-04-09 | Erich Wolf | Verfahren zur herstellung von hochdruckmodifikationen fester stoffe |
JPS61209990A (ja) * | 1985-03-14 | 1986-09-18 | Nec Corp | ダイヤモンドの気相合成法 |
US4816286A (en) * | 1985-11-25 | 1989-03-28 | Showa Denko Kabushiki Kaisha | Process for synthesis of diamond by CVD |
JPS62167294A (ja) * | 1986-01-21 | 1987-07-23 | Showa Denko Kk | 気相法によるダイヤモンド薄膜の製造法 |
JPH0658891B2 (ja) * | 1987-03-12 | 1994-08-03 | 住友電気工業株式会社 | 薄膜単結晶ダイヤモンド基板 |
JPH01103993A (ja) * | 1987-10-16 | 1989-04-21 | Sumitomo Electric Ind Ltd | ダイヤモンド単結晶成長方法 |
JPH01103994A (ja) * | 1987-10-16 | 1989-04-21 | Sumitomo Electric Ind Ltd | ダイヤモンドの単結晶成長方法 |
-
1990
- 1990-05-21 US US07/526,846 patent/US5127983A/en not_active Expired - Lifetime
- 1990-05-22 EP EP90109735A patent/EP0399483B1/de not_active Expired - Lifetime
- 1990-05-22 JP JP2131994A patent/JP2654232B2/ja not_active Expired - Lifetime
- 1990-05-22 DE DE69021268T patent/DE69021268T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0375298A (ja) | 1991-03-29 |
EP0399483B1 (de) | 1995-08-02 |
EP0399483A3 (de) | 1994-02-16 |
EP0399483A2 (de) | 1990-11-28 |
DE69021268T2 (de) | 1996-01-11 |
JP2654232B2 (ja) | 1997-09-17 |
US5127983A (en) | 1992-07-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033 |